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Vishay Siliconix SI4866BDY-T1-GE3
- Part No.:
- SI4866BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4866BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 12V 21.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,888
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Product details
Overview
SI4866BDY-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® power MOSFET rated for 12 V drain-source voltage, with RDS(on) = 0.0053 Ω at VGS = 4.5 V and continuous drain current of 21.5 A at TC = 25 °C. It serves as a high-efficiency synchronous rectifier in low-voltage DC/DC converters.
For engineers reviewing the SI4866BDY-T1-GE3 datasheet, SI4866BDY-T1-GE3 pinout, SI4866BDY-T1-GE3 application, or SI4866BDY-T1-GE3 equivalent, key selection criteria include its ultra-low on-resistance at 1.8 V gate drive, 100% Rg and UIS tested reliability, and SO-8 package suitability for high-density point-of-load designs.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low-voltage switching with fast dynamic response: total gate charge is 29.5 nC at VGS = 2.5 V and 52 nC at VGS = 4.5 V, enabling efficient operation in high-frequency synchronous buck topologies. Its body diode exhibits trr = 50–80 ns and Qrr = 35–55 nC under specified test conditions.
The device is characterized across temperature: RDS(on) increases by ~1.3× from 25 °C to 125 °C at fixed VGS, and VGS(th) drifts negatively at −3.5 mV/°C. Thermal resistance from junction-to-foot is 23 °C/W (typ), supporting direct thermal coupling to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum blocking voltage compatible with 12 V input rails and 5 V/3.3 V logic-level gate drive. |
| RDS(on) @ VGS = 4.5 V | 0.0053 Ω - Enables <100 mW conduction loss at 12 A, critical for >95% efficiency in POL converters. |
| ID (continuous, TC = 25 °C) | 21.5 A - Supports high-current output stages without external heatsinking on standard FR4. |
| Qg @ VGS = 2.5 V | 29.5 nC - Low gate charge allows fast turn-on with minimal driver power, reducing switching losses below 1 MHz. |
| trr (body diode) | 50–80 ns - Short reverse recovery time minimizes shoot-through risk and EMI in synchronous rectification. |
| RthJF | 23 °C/W (typ) - Junction-to-foot thermal path enables direct thermal transfer to PCB ground plane for passive cooling. |
Pinout & Package
SI4866BDY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads on pins 1, 2, 3, 4, 5, 6, 7, and 8 configured as four parallel drain terminals and two source terminals per side. The package meets JEDEC MS-012 mechanical dimensions and supports automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain connections tied internally to the MOSFET die backside; provide low-inductance, high-current path to PCB power plane. |
| 5, 6 | Source (S) | Two dedicated source terminals connected to source metallization; minimize source inductance for stable gate control. |
| 7, 8 | Gate (G) | Parallel gate inputs reduce effective gate resistance (Rg = 0.8–1.3 Ω); improve gate drive robustness and switching consistency. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × area efficiency for 12 V-class MOSFETs in SO-8 footprint. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress. |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU without compromising thermal or electrical performance. |
| Low VGS(th) range | 0.4–1.0 V threshold enables reliable turn-on with 1.8 V microcontroller GPIO or low-voltage PWM controllers. |
Applications
| Synchronous Rectifier | Point-of-Load Buck Converter |
|---|---|
Use Scenario: Replaces Schottky diode in secondary-side rectification of isolated DC/DC converters operating at 300 kHz–1 MHz. IC Role / Device Role / Timing Role: Power switch conducting during low-side interval; body diode conducts freewheeling current before synchronous turn-on. Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, improving full-load efficiency by up to 2.1% at 12 A output. | Use Scenario: High-current (10–20 A) step-down regulator supplying FPGA core voltage (0.8–1.2 V) from 3.3 V or 5 V rail. IC Role / Device Role / Timing Role: Low-side synchronous switch in buck topology; commutates with high-side FET at fixed frequency. Use Value: Achieves <10 mΩ on-resistance at 2.5 V gate drive, minimizing I²R loss and thermal rise in compact 1" × 1" layout. |
| USB PD Power Delivery | Industrial PLC I/O Module |
Use Scenario: Output stage in programmable 5–20 V, 3–5 A USB PD sink adapter with adaptive voltage regulation. IC Role / Device Role / Timing Role: Secondary-side power switch handling bidirectional current during voltage negotiation and load transient events. Use Value: With 20.2 A rating at VGS = 2.5 V and 18.2 A at 1.8 V, supports wide-input gate drive while maintaining safe SOA margins. | Use Scenario: 24 V DC input protection and distribution in modular I/O terminal blocks requiring hot-swap capability. IC Role / Device Role / Timing Role: Load switch controlling power to field-side analog/digital modules; operated via isolated digital signal. Use Value: 12 V VDS rating and 50 A pulsed current support enable robust inrush current limiting and short-circuit withstand per IEC 61000-4-5. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 0.022 Ω @ VGS = 2.5 V; SO-8 package but lower current rating (4.3 A). | Targeted at sub-5 A logic-level loads; insufficient for >10 A POL use cases. | Select only when board space is constrained and current demand is ≤4.5 A with 2.5 V drive. |
| DMN2004LK-7 | RDS(on) = 0.0055 Ω @ VGS = 4.5 V; same SO-8 footprint but higher Qg (42 nC) and no halogen-free certification. | Lacks IEC 61249-2-21 compliance; requires verification for green manufacturing programs. | Acceptable where halogen-free requirement is waived and gate drive strength permits higher Qg. |
Compared with IRLML6344TRPBF and DMN2004LK-7, SI4866BDY-T1-GE3 uniquely combines 21.5 A current capability, sub-6 mΩ on-resistance at 2.5 V, and halogen-free compliance in a single SO-8 package-making it optimal for high-efficiency, high-reliability, and environmentally regulated POL systems.
Availability
SI4866BDY-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectifiers, point-of-load buck converters, and industrial hot-swap modules requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.
Supply support for SI4866BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and environmentally compliant components.
The Si4866BDY product line was engineered specifically for ultra-low-voltage, high-current synchronous rectification and POL conversion, prioritizing RDS(on) scalability down to 1.8 V gate drive and robust UIS performance.
FAQ
What is the maximum continuous drain current for SI4866BDY-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI4866BDY-T1-GE3 is 17.2 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the SO-8 package under sustained power dissipation and must be validated against actual board layout and airflow conditions. SI4866BDY-T1-GE3 maintains stable RDS(on) performance across this range due to its trench-gate design.
Does SI4866BDY-T1-GE3 support 1.8 V gate drive in production systems?
Yes, SI4866BDY-T1-GE3 is fully characterized for 1.8 V gate drive: RDS(on) = 0.0074 Ω at ID = 8 A and VGS = 1.8 V, with guaranteed VGS(th) down to 0.4 V. This enables direct interface with 1.8 V logic controllers without level-shifting. SI4866BDY-T1-GE3 delivers 18.2 A continuous current under these conditions, confirmed by datasheet testing.
What is the thermal resistance from junction to ambient for SI4866BDY-T1-GE3 on a 1" × 1" FR4 board?
The typical junction-to-ambient thermal resistance (RthJA) for SI4866BDY-T1-GE3 mounted on a 1" × 1" FR4 board is 40 °C/W, with a maximum of 50 °C/W. This value assumes standard solder mask-defined copper and no additional heatsinking. SI4866BDY-T1-GE3's low RthJF (23 °C/W) allows further thermal improvement when the drain pads are connected to internal or external copper planes.
Is SI4866BDY-T1-GE3 suitable for avalanche energy handling in inductive switching?
Yes, SI4866BDY-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 20 mJ and avalanche current (IAS) of 20 A with L = 0.1 mH. These values are verified per UIS testing protocol and reflect ruggedness in unclamped inductive load scenarios. SI4866BDY-T1-GE3 includes 100% UIS screening, making it appropriate for motor gate drivers and relay snubbing where transient energy absorption is required.
How does the body diode performance of SI4866BDY-T1-GE3 compare to Schottky alternatives?
SI4866BDY-T1-GE3's body diode has VSD = 0.62–1.1 V at IS = 2.3 A and trr = 50–80 ns, offering lower forward voltage than most 20 V Schottkys above 3 A while avoiding leakage and temperature instability issues. In synchronous rectification, SI4866BDY-T1-GE3 eliminates body diode conduction entirely during normal operation-delivering superior efficiency versus Schottky solutions that always incur forward drop.
SI4866BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 21.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 5.3mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5020 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 4.45W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4866BDY-T1-GE3 FAQ
1.How can I place an order for SI4866BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4866BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4866BDY-T1-GE3 reliable?
The price and inventory of SI4866BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4866BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4866BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4866BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4866BDY-T1-GE3?
SI4866BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4866BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4866BDY-T1-GE3?
For technical support, including SI4866BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4866BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4866BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4866BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4866BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4866BDY-T1-GE3?
All SI4866BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4866BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4866BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4866BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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