Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4866DY-T1-GE3

Name: SI4866DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4866DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI4866DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4866DY-T1-GE3.pdf

Description:: MOSFET N-CH 12V 11A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,636

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI4866DY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for synchronous rectification in high-efficiency DC-DC converters, featuring 12 V V_DS, 0.0055 Ω R_DS(on) at 4.5 V V_GS, and 17 A continuous drain current at T_J = 150 °C. It uses SO-8 packaging and supports PWM operation with low gate charge (21–30 nC) and fast switching (t_r = 32–48 ns).

For engineers reviewing the SI4866DY-T1-GE3 datasheet, SI4866DY-T1-GE3 pinout, SI4866DY-T1-GE3 application, or SI4866DY-T1-GE3 equivalent, key selection criteria include its halogen-free construction, 2.5 V logic-level gate drive capability, thermal resistance (R_thJA = 67 °C/W), integrated body diode performance (V_SD = 0.70–1.1 V), and qualification for point-of-load synchronous buck topologies.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve reduced gate charge and enhanced switching efficiency in low-voltage, high-current synchronous rectifier applications. Its 12 V rating and 0.0055 Ω on-resistance at 4.5 V gate drive enable minimal conduction loss in compact DC-DC stages.

The device integrates a robust body diode with reverse recovery time (t_rr) of 60–90 ns and forward voltage (V_SD) of 0.70–1.1 V at 2.7 A, supporting bidirectional current handling in buck converter freewheeling paths without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum blocking voltage compatible with 5 V/3.3 V input rails and 12 V intermediate bus systems.
R_DS(on)	0.0055 Ω at V_GS = 4.5 V - Enables <10 mW conduction loss at 17 A, critical for high-efficiency PoL converters.
I_D (continuous)	17 A at T_J = 150 °C - Supports high-current output stages in space-constrained industrial and computing power supplies.
Q_g	21–30 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in PWM controllers.
t_r/t_f	32–48 ns / 35–53 ns - Fast edge rates minimize switching transition losses and EMI generation in dense layouts.
V_GS(th)	0.6 V typical - Ensures reliable turn-on with low-voltage gate drivers and improves system-level noise immunity.
R_thJA	67 °C/W (steady state) - Defines thermal derating curve for SO-8 PCB layout; requires ≥1"×1" copper area for full 17 A rating.

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A). Pin 1 marked by notch or dot; leads are gull-wing, Pb-free and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 2.5–4.5 V logic-level drive; 100 % R_g tested for consistency.
2 (S)	Source	Power return node; tied to ground or low-side switch node; connects to internal substrate.
3 (D)	Drain	Main power output path; electrically connected to exposed backside pad for thermal conduction.
4 (D)	Drain	Parallel drain connection; shares current path with pins 3, 5, 6, 7, 8 to reduce package inductance.
5 (D)	Drain	Parallel drain connection; enhances current sharing and thermal spreading across SO-8 footprint.
6 (D)	Drain	Parallel drain connection; minimizes R_DS(on) contribution from bond wire resistance.
7 (S)	Source	Secondary source connection; improves current distribution and reduces source inductance in high-di/dt operation.
8 (D)	Drain	Parallel drain connection; completes symmetrical drain layout for balanced thermal and electrical performance.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling smaller footprints without sacrificing current capacity.
PWM-optimized switching	Minimizes overlap loss in synchronous buck converters via matched t_on/t_off and low Q_gd/Q_gs ratio (≈0.76).
100 % R_g tested	Ensures consistent gate resistance across production lots, critical for predictable rise/fall times and EMI control.
Halogen-free construction	Complies with IEC 61249-2-21 and RoHS; eliminates brominated flame retardants without compromising package integrity.
Low V_GS(th) dispersion	±0.2 V variation over temperature ensures stable turn-on behavior across -55 to 150 °C operating range.

Applications

Synchronous Rectifier	Point-of-Load Buck Converter
Use Scenario: Replaces Schottky diode in secondary-side rectification of isolated DC-DC converters (e.g., 12 V input → 3.3 V/20 A output). IC Role / Device Role / Timing Role: Acts as actively controlled low-loss current path during freewheeling phase; synchronized to primary-side switch timing. Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, improving efficiency from 88 % to 93 % at full load.	Use Scenario: High-current output stage in server VRMs or FPGA power delivery networks requiring <10 mΩ on-resistance. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; handles continuous 17 A with minimal thermal rise on standard FR4. Use Value: Enables 95 % peak efficiency at 1 MHz switching with 4.5 V gate drive, reducing heatsink requirements.
USB-C Power Delivery Sink	Industrial PLC I/O Module
Use Scenario: Input protection and OR-ing function in 20 V/5 A USB PD 3.0 sink circuits with dynamic voltage negotiation. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage clamp; body diode conducts during transient fault conditions. Use Value: Withstands 50 A pulsed drain current and recovers in 60–90 ns, preventing latch-up during hot-plug events.	Use Scenario: 24 V DC power rail distribution in programmable logic controller backplanes with multiple isolated outputs. IC Role / Device Role / Timing Role: Load switch for field I/O power domains; controlled via microcontroller GPIO with soft-start capability. Use Value: 0.6 V gate threshold allows direct interface with 3.3 V MCU outputs; 1.4 A steady-state source current supports local decoupling.

Synchronous Rectifier

Point-of-Load Buck Converter

Use Scenario: Replaces Schottky diode in secondary-side rectification of isolated DC-DC converters (e.g., 12 V input → 3.3 V/20 A output).

IC Role / Device Role / Timing Role: Acts as actively controlled low-loss current path during freewheeling phase; synchronized to primary-side switch timing.

Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, improving efficiency from 88 % to 93 % at full load.

Use Scenario: High-current output stage in server VRMs or FPGA power delivery networks requiring <10 mΩ on-resistance.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; handles continuous 17 A with minimal thermal rise on standard FR4.

Use Value: Enables 95 % peak efficiency at 1 MHz switching with 4.5 V gate drive, reducing heatsink requirements.

USB-C Power Delivery Sink

Industrial PLC I/O Module

Use Scenario: Input protection and OR-ing function in 20 V/5 A USB PD 3.0 sink circuits with dynamic voltage negotiation.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage clamp; body diode conducts during transient fault conditions.

Use Value: Withstands 50 A pulsed drain current and recovers in 60–90 ns, preventing latch-up during hot-plug events.

Use Scenario: 24 V DC power rail distribution in programmable logic controller backplanes with multiple isolated outputs.

IC Role / Device Role / Timing Role: Load switch for field I/O power domains; controlled via microcontroller GPIO with soft-start capability.

Use Value: 0.6 V gate threshold allows direct interface with 3.3 V MCU outputs; 1.4 A steady-state source current supports local decoupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	Higher R_DS(on) (0.0075 Ω @ 4.5 V), larger SO-8 footprint (5.0 × 6.0 mm), no halogen-free certification.	Less suitable for space-constrained PoL designs; higher conduction loss limits max current to ~14 A at same thermal budget.	Choose when legacy IR part compatibility is required and halogen compliance is not mandated.
DMN2053UVT-7	Lower V_DS (20 V), higher R_DS(on) (0.0095 Ω @ 4.5 V), same SO-8 package but different pinout (G-S-D configuration).	Not pin-compatible; requires PCB redesign; better suited for 12–20 V input systems where higher breakdown margin is needed.	Choose only if 20 V rating is essential and layout revision is acceptable.

Compared with IRF7470PBF and DMN2053UVT-7, SI4866DY-T1-GE3 delivers superior thermal performance (R_thJA = 67 °C/W), tighter gate threshold control (0.6 V typ), and verified halogen-free compliance-making it optimal for high-density, energy-efficient, and environmentally regulated power designs.

Availability

SI4866DY-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectifiers, point-of-load buck converters, and industrial PLC I/O modules requiring stable component supply, halogen-free compliance, and high-current SO-8 MOSFET performance.

Supply support for SI4866DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si4866DY product line targets high-efficiency, low-voltage DC-DC conversion in space-constrained applications, emphasizing reduced gate charge, logic-level drive compatibility, and thermally enhanced SO-8 packaging.

FAQ

What is the maximum continuous drain current for SI4866DY-T1-GE3 at 70 °C ambient temperature?

The SI4866DY-T1-GE3 supports 14 A continuous drain current at T_A = 70 °C with proper PCB copper area (1" × 1" FR4). This rating assumes steady-state operation and accounts for thermal resistance (R_thJA = 67 °C/W) and junction temperature limit of 150 °C. Derating curves in the datasheet confirm linear reduction from 17 A at 25 °C to 14 A at 70 °C.

Does SI4866DY-T1-GE3 support 2.5 V gate drive in practical applications?

Yes, SI4866DY-T1-GE3 is fully specified for 2.5 V gate drive: R_DS(on) = 0.008 Ω at V_GS = 2.5 V and I_D = 14 A. Its 0.6 V typical V_GS(th) ensures strong enhancement-mode turn-on even with marginal gate drive margins, making it compatible with 2.5 V logic families and low-dropout gate drivers.

Is SI4866DY-T1-GE3 pin-compatible with standard SO-8 MOSFETs like the Si4800DY?

No, SI4866DY-T1-GE3 uses a non-standard SO-8 pinout: pins 3, 4, 5, 6, and 8 are all drain connections, while pins 2 and 7 are sources. The Si4800DY follows conventional G-S-D-S-D-S-D-G arrangement. Substituting SI4866DY-T1-GE3 into a Si4800DY layout would cause short circuits and functional failure.

What is the significance of "100 % R_g tested" for SI4866DY-T1-GE3?

"100 % R_g tested" means every SI4866DY-T1-GE3 unit undergoes production screening for gate resistance (1.5–3.9 Ω), ensuring tight distribution of switching speed and EMI characteristics. This eliminates lot-to-lot variability in t_r/t_f, critical for high-frequency synchronous buck designs where timing predictability affects efficiency and stability.

Can SI4866DY-T1-GE3 be used in reverse-biased configurations such as OR-ing circuits?

Yes, SI4866DY-T1-GE3 supports reverse conduction via its integrated body diode, with V_SD = 0.70–1.1 V at I_S = 2.7 A and t_rr = 60–90 ns. Its low forward voltage and fast recovery make it suitable for active OR-ing in redundant 12 V power supplies, though external gate control is required to prevent shoot-through during transitions.

SI4866DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 17A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4866DY-T1-GE3 FAQ

1.How can I place an order for SI4866DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4866DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4866DY-T1-GE3 reliable?

The price and inventory of SI4866DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4866DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4866DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4866DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4866DY-T1-GE3?

SI4866DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4866DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4866DY-T1-GE3?

For technical support, including SI4866DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4866DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4866DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4866DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4866DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4866DY-T1-GE3?

All SI4866DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4866DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4866DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4866DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …