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Vishay Siliconix SI4874BDY-T1-GE3
- Part No.:
- SI4874BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4874BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 12A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,422
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Product details
Overview
SI4874BDY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, delivering RDS(on) = 7.0 mΩ at VGS = 10 V and 8.5 mΩ at VGS = 4.5 V, with continuous drain current up to 16 A at TA = 25 °C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the SI4874BDY-T1-GE3 datasheet, SI4874BDY-T1-GE3 pinout, SI4874BDY-T1-GE3 application, or SI4874BDY-T1-GE3 equivalent, key selection criteria include low gate charge (Qg = 25 nC), fast switching (td(off) = 90 ns), thermal resistance RthJA = 80 °C/W, halogen-free compliance, and SO-8 footprint compatibility with standard PCB layout practices.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage (VGS(th) = 1.0–3.0 V) enables reliable turn-on with 3.3-V and 5-V logic-level drivers, while its integrated body diode supports bidirectional current flow in buck converter freewheeling paths.
The device features 100% Rg tested gate resistance (0.4–1.4 Ω), ensuring consistent drive timing across production lots. Its SO-8 package provides dual drain-source terminals per side (pins 1–3 and 5–7 tied internally), enabling parallel current paths and reduced package inductance in high-frequency power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage suitable for 24-V industrial bus and 12-V automotive auxiliary systems |
| RDS(on) @ 10 V | 7.0 mΩ - Enables ≤ 1.8 W conduction loss at 16 A, reducing thermal stress in compact layouts |
| RDS(on) @ 4.5 V | 8.5 mΩ - Supports direct drive from 3.3-V microcontrollers without level-shifting circuitry |
| Qg | 25 nC - Low total gate charge minimizes driver power demand and switching energy loss |
| Ciss | 3230 pF - Predictable input capacitance simplifies gate driver sizing and EMI filtering |
| RthJA | 80 °C/W - Defines worst-case junction-to-ambient thermal rise on standard FR4, guiding heatsink requirements |
| VGS(th) | 1.0–3.0 V - Ensures robust turn-on margin with TTL/CMOS logic outputs under temperature variation |
Pinout & Package
SO-8 (MS-012) surface-mount package with exposed drain pad (pin 4 and pins 5–8 electrically connected to drain). Dimensions: 4.9 mm × 3.9 mm × 1.5 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal die array; connects to ground or low-side return path |
| 4, 5, 6, 7, 8 | Drain | Internally paralleled drain terminals; high-current output node with low-inductance routing |
| 3 (shared) | Gate | Single gate input terminal; requires <1.4 Ω series resistance to damp ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables sub-10-mΩ RDS(on) in SO-8 without die size penalty, improving power density vs. planar MOSFETs |
| 100% Rg tested | Guarantees gate resistance within 0.4–1.4 Ω range, eliminating need for external gate resistor tuning |
| Halogen-free construction | Meets IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment |
| Low Qgd/Qg ratio | 6.5/25 nC = 26% - Reduces Miller effect, enabling stable operation with minimal gate drive overshoot |
| Integrated body diode | VSD = 0.74–1.1 V at 2.7 A - Provides predictable reverse recovery (trr = 40–60 ns) for synchronous rectification |
Applications
| DC-DC Synchronous Buck Converter | Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-efficiency 12-V input to 3.3-V/5-V point-of-load conversion in networking switches and FPGA power supplies. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal performance. Use Value: Achieves >95% efficiency at 10-A load by cutting rectifier loss from ~1.2 W (diode) to ~0.9 W (MOSFET), lowering board temperature rise by 12 °C. | Use Scenario: 24-V brushed DC motor control in industrial actuators and HVAC dampers with PWM frequencies up to 100 kHz. IC Role / Device Role: Low-side switch in H-bridge topology, commutating current through motor windings with minimal voltage drop. Use Value: Delivers 14-A continuous current with <0.12-V drop at 10 A, reducing I²R heating and enabling smaller heatsinks than discrete BJT solutions. |
| Hot-Swap Controller Protection | USB-C Power Delivery Switch |
Use Scenario: Inrush current limiting and fault isolation in redundant 48-V telecom power shelves during live insertion. IC Role / Device Role: Load switch placed between backplane and daughterboard, controlled via dedicated hot-swap IC. Use Value: With RDS(on) = 7 mΩ, limits voltage drop to <0.34 V at 48 A peak, preserving downstream voltage margin while supporting fast fault shutdown. | Use Scenario: VBUS path switch in USB-C PD 3.0 compliant portable chargers and docking stations handling up to 20 V/5 A. IC Role / Device Role: Bidirectional power path FET enabling sink/source capability in dual-role ports. Use Value: Body diode forward voltage of 0.74 V ensures low-loss reverse conduction during sink mode, meeting USB-C spec <100-mV dropout requirement at 3 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 8.0 mΩ @ 10 V; Qg = 27 nC; SO-8 package | Slightly higher conduction loss and gate drive energy; identical pinout | Acceptable where marginal efficiency gain is acceptable and legacy IR part sourcing is preferred |
| DMN3026LSD-13 | RDS(on) = 6.5 mΩ @ 10 V; Qg = 22 nC; same SO-8 footprint but different pin assignment (G/S/D layout) | Requires PCB layout revision due to non-identical pinout; superior RDS(on) and lower Qg | Preferred for new designs targeting maximum efficiency if layout flexibility exists |
Compared with IRF7470PBF and DMN3026LSD-13, SI4874BDY-T1-GE3 offers balanced trade-offs: lower RDS(on) than IRF7470PBF and full pin compatibility with existing SO-8 layouts, while avoiding the redesign overhead required for DMN3026LSD-13's altered pin mapping.
Availability
SI4874BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, hot-swap controllers, and USB-C power delivery systems requiring stable component supply and halogen-free compliance.
Supply support for SI4874BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.
The Si4874BDY product line targets high-current, low-voltage power switching applications where thermal performance, gate drive simplicity, and environmental compliance are critical design constraints.
FAQ
What is the maximum continuous drain current rating for SI4874BDY-T1-GE3 at 70 °C ambient temperature?
The SI4874BDY-T1-GE3 supports 9 A continuous drain current at TA = 70 °C with proper PCB copper area. This value derives from its 1.0 W maximum power dissipation limit at that ambient, constrained by RthJA = 80 °C/W and junction temperature cap of 150 °C. Derating curves in the official datasheet confirm this linear relationship across ambient conditions.
Does SI4874BDY-T1-GE3 support logic-level gate drive from a 3.3-V microcontroller?
Yes, SI4874BDY-T1-GE3 is fully compatible with 3.3-V logic-level drive: its VGS(th) range (1.0–3.0 V) ensures turn-on, and RDS(on) = 8.5 mΩ at VGS = 4.5 V guarantees usable on-resistance even at 3.3 V (typical RDS(on) ≈ 10.2 mΩ). No level shifter is needed for most 3.3-V MCU GPIO outputs.
What is the safe operating area (SOA) limitation for SI4874BDY-T1-GE3 in single-pulse conditions?
The SI4874BDY-T1-GE3 SOA curve shows it can sustain 16 A at 30 V for ≤ 10 ms in single-pulse mode. At 100 V, the limit drops to ~5 A for the same duration. These boundaries are defined by both RDS(on) thermal limits and avalanche energy capacity, and must be validated against actual layout parasitics and transient load profiles.
How does the halogen-free status of SI4874BDY-T1-GE3 impact its manufacturing or reliability?
The halogen-free status of SI4874BDY-T1-GE3 complies with IEC 61249-2-21 and does not compromise reliability: Vishay validates all halogen-free variants to the same qualification standards (JESD22, AEC-Q101 where applicable) as lead-free versions. Material substitutions affect only flame-retardant chemistry-not die performance, packaging integrity, or lifetime metrics.
Can SI4874BDY-T1-GE3 be used in parallel configurations to increase current handling?
Yes, SI4874BDY-T1-GE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. However, matched gate drive paths (equal trace length/resistance) and symmetrical thermal coupling are essential. Each device must remain within its SOA, and total current should not exceed derated sum based on shared heatsinking and ambient conditions.
SI4874BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3230 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4874BDY-T1-GE3 FAQ
1.How can I place an order for SI4874BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4874BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4874BDY-T1-GE3 reliable?
The price and inventory of SI4874BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4874BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4874BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4874BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4874BDY-T1-GE3?
SI4874BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4874BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4874BDY-T1-GE3?
For technical support, including SI4874BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4874BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4874BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4874BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4874BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4874BDY-T1-GE3?
All SI4874BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4874BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4874BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4874BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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