Vishay Siliconix SI4884BDY-T1-E3

Overview

SI4884BDY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, optimized for PWM switching with R_DS(on) = 0.0090 Ω at V_GS = 10 V, 10.5 nC total gate charge, and 16.5 A continuous drain current at T_C = 25 °C - used in DC-DC converters and motor drive half-bridges.

For engineers reviewing the SI4884BDY-T1-E3 datasheet, SI4884BDY-T1-E3 pinout, SI4884BDY-T1-E3 application, or SI4884BDY-T1-E3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V (0.012 Ω), fast switching (t_r = 11–18 ns at V_GEN = 10 V), body diode recovery (t_rr = 25–40 ns), and SO-8 thermal performance (R_thJA = 40–50 °C/W).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high cell density and low on-resistance. Its gate charge profile (Q_g = 10.5 nC at V_GS = 4.5 V) supports efficient 3.3 V/5 V logic-level drive in synchronous buck stages.

The device integrates a robust intrinsic body diode with V_SD = 0.75–1.1 V at I_S = 2.3 A and Q_rr = 15–25 nC, enabling reliable freewheeling in hard-switched topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation; 1.27 mm pitch, 4.8–5.0 mm × 3.8–4.0 mm body size, 1.35–1.75 mm height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRF7470PBF and DMN3025LSD-13, the SI4884BDY-T1-E3 offers balanced trade-offs: lower Q_g than IRF7470PBF for 4.5 V drive compatibility, and superior body diode specs versus DMN3025LSD-13 for reliable freewheeling - making it optimal for cost-sensitive, medium-power PWM systems.

Availability

SI4884BDY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and hot-swap circuits requiring stable component supply, lead-free compliance, and SO-8 manufacturability.

Supply support for SI4884BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and thermal performance.

The Si4884BDY product line targets high-efficiency, medium-power switching applications where low R_DS(on), fast switching, and robust body diode behavior are critical - especially in space-constrained industrial and computing power supplies.

FAQ

What is the maximum continuous drain current for SI4884BDY-T1-E3 at 70 °C case temperature?

The SI4884BDY-T1-E3 supports 13.2 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under typical PCB copper area conditions and ensures safe operation without exceeding T_J(max) = 150 °C. The SI4884BDY-T1-E3 maintains this rating across its full V_GS range and is validated for sustained use in thermally demanding environments like enclosed motor controllers.

Does SI4884BDY-T1-E3 support 3.3 V logic-level gate drive?

Yes, the SI4884BDY-T1-E3 is fully compatible with 3.3 V logic-level gate drive: its R_DS(on) is specified at 0.012 Ω with V_GS = 4.5 V, and gate threshold voltage V_GS(th) is guaranteed between 1.0 V and 3.0 V. At 3.3 V, the device achieves sufficient enhancement for most PWM applications, and its low Q_g (10.5 nC at 4.5 V) ensures rapid turn-on even with modest drive strength. The SI4884BDY-T1-E3 thus eliminates the need for gate driver ICs in many low-to-medium frequency designs.

What is the thermal resistance from junction to ambient for SI4884BDY-T1-E3?

The SI4884BDY-T1-E3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W under standard test conditions (surface-mounted on 1" × 1" FR4 board). Its typical R_thJA is 40 °C/W, and the junction-to-foot (drain) resistance is 22–28 °C/W - confirming effective heat transfer through the exposed drain pad. These values enable the SI4884BDY-T1-E3 to dissipate up to 2.5 W at room ambient without forced airflow, supporting compact, fanless industrial power designs.

Is SI4884BDY-T1-E3 halogen-free and RoHS compliant?

Yes, the SI4884BDY-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant, as confirmed in its ordering information and features list. The "-E3" suffix explicitly denotes lead-free and halogen-free construction. This makes the SI4884BDY-T1-E3 suitable for environmentally regulated markets including EU industrial equipment and medical devices where material declarations are mandatory. Vishay provides full compliance documentation upon request for the SI4884BDY-T1-E3.

How does the body diode performance of SI4884BDY-T1-E3 compare to standard MOSFETs?

The SI4884BDY-T1-E3 features a specifically optimized body diode with t_rr = 25–40 ns and Q_rr = 15–25 nC at I_F = 9.5 A and dI/dt = 100 A/µs - significantly faster and lower-charge than generic SO-8 MOSFETs. Its V_SD is 0.75–1.1 V at I_S = 2.3 A, minimizing forward conduction loss during freewheeling. This allows the SI4884BDY-T1-E3 to replace discrete Schottky diodes in many half-bridge and synchronous rectifier applications, reducing BOM count and layout complexity.