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Vishay Siliconix SI4884BDY-T1-GE3
- Part No.:
- SI4884BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4884BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 16.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,896
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Product details
Overview
SI4884BDY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, optimized for PWM switching with RDS(on) = 0.0090 Ω at VGS = 10 V, 10.5 nC total gate charge, and 16.5 A continuous drain current at TC = 25 °C - used in DC-DC converter high-side switches and synchronous rectifiers.
For engineers reviewing the SI4884BDY-T1-GE3 datasheet, SI4884BDY-T1-GE3 pinout, SI4884BDY-T1-GE3 application, or SI4884BDY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (RthJA = 40–50 °C/W), body diode recovery characteristics (trr = 25–40 ns), and SO-8 footprint compatibility for board-level design validation.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (VGS(th) = 1–3 V) enables 4.5 V logic-level drive compatibility, while its Qg = 10.5 nC (at VGS = 4.5 V) supports high-frequency PWM operation up to several hundred kHz.
The device integrates a robust intrinsic body diode with VSD = 0.75–1.1 V at IS = 2.3 A and Qrr = 15–25 nC, making it suitable for synchronous buck topologies where reverse recovery performance directly impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage for 24 V input rail applications with margin |
| RDS(on) | 0.0090 Ω at VGS = 10 V - enables ≤1.5 W conduction loss at 12 A continuous current |
| ID (continuous) | 16.5 A at TC = 25 °C - supports high-current power stages without forced cooling |
| Qg | 10.5 nC at VGS = 4.5 V - determines gate driver strength requirement for <30 ns turn-on delay |
| trr | 25–40 ns - limits switching losses and voltage overshoot during body diode commutation |
| RthJA | 40–50 °C/W - defines thermal derating curve for SO-8 PCB layout without heatsink |
| VGS(th) | 1–3 V - ensures reliable enhancement-mode turn-on with standard 3.3 V/5 V microcontroller GPIO |
Pinout & Package
SO-8 narrow-body surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm × 1.75 mm, with exposed drain pad for thermal enhancement. Pin 1 marked by notch or dot; pins 1–4 on left side, 5–8 on right side when viewed top-down.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires low-impedance drive due to 1.4–2.2 Ω gate resistance |
| 2 (S) | Source | Power return node; tied to ground or low-side switch source in half-bridge |
| 3 (S) | Source | Parallel source connection to reduce bondwire inductance and improve current sharing |
| 4 (S) | Source | Third source terminal for enhanced thermal and electrical path to PCB ground plane |
| 5 (D) | Drain | Main power output; connected to internal die backside and exposed pad for heat transfer |
| 6 (D) | Drain | Second drain terminal to lower RDS(on) and improve current handling capability |
| 7 (D) | Drain | Third drain terminal supporting high-pulse current (IDM = 50 A) capability |
| 8 (D) | Drain | Fourth drain terminal enabling low-inductance connection to input bus or inductor node |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.0090 Ω RDS(on) in SO-8, reducing conduction loss by >35% vs. planar MOSFETs at same voltage rating |
| PWM-optimized switching | Qgd/Qgs ratio of ~0.7 enables clean Miller plateau control and reduced shoot-through risk in synchronous converters |
| Halogen-free construction | Complies with IEC 61249-2-21, eliminating brominated flame retardants without compromising thermal reliability |
| Enhanced body diode | Qrr = 15–25 nC and ta + tb = 25 ns enable efficient synchronous rectification in buck regulators |
| Thermal footpad | Exposed drain pad provides RthJF = 22–28 °C/W path to PCB copper, doubling power dissipation vs. standard SO-8 |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap Controller High-Side Switch |
|---|---|
Use Scenario: 12 V input to 3.3 V/15 A output in server VRM with 500 kHz switching frequency. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor; driven by dedicated gate controller. Use Value: Low RDS(on) and fast trr minimize conduction and commutation losses, achieving >94% peak efficiency at full load. | Use Scenario: Inrush current limiting for 24 V industrial backplane during live insertion. IC Role / Device Role / Timing Role: Controlled high-side pass element with soft-start gate ramping via external RC network. Use Value: 30 V VDS rating and 16.5 A ID support 20 A sustained load with 50 A surge tolerance, preventing MOSFET failure during plug-in transients. |
| Motor Drive Half-Bridge Leg | USB-C Power Delivery Load Switch |
Use Scenario: 24 V BLDC gate driver stage powering 150 W fan motor with trapezoidal commutation. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; synchronized with high-side to avoid shoot-through. Use Value: 10.5 nC Qg allows full turn-on within 100 ns using 100 mA gate driver, enabling precise PWM timing at 20 kHz. | Use Scenario: 20 V/5 A USB PD 3.0 power path management in portable docking station. IC Role / Device Role / Timing Role: Load switch isolating downstream ports; controlled by PD controller's GPIO with overcurrent shutdown. Use Value: VGS(th) = 1–3 V ensures full enhancement at 3.3 V logic level, eliminating need for level-shifting circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0085 Ω at 10 V but Qg = 27 nC; SO-8 package with different pinout (G-D-S-D-S-D-D-G) | Higher gate charge increases driver loss and limits max switching frequency to ~200 kHz | Prefer SI4884BDY-T1-GE3 for >300 kHz designs requiring low Qg and consistent SO-8 pin mapping |
| DMN3025LSD-13 | RDS(on) = 0.0025 Ω at 10 V but rated only for 30 V and 12 A; dual-N in SO-8 with shared source | Lacks body diode specs and avalanche rating; unsuitable for synchronous rectifier use | Choose SI4884BDY-T1-GE3 when body diode recovery (trr, Qrr) and 15 mJ EAS are required for robustness |
Compared with IRF7470PBF and DMN3025LSD-13, SI4884BDY-T1-GE3 offers balanced trade-offs: lowest Qg/RDS(on) ratio among SO-8 30 V parts, validated body diode metrics, and industry-standard pinout - making it optimal for high-efficiency, high-frequency DC-DC and hot-swap applications.
Availability
SI4884BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and motor drive half-bridges requiring stable component supply, halogen-free compliance, and SO-8 thermal performance.
Supply support for SI4884BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and thermal performance.
The Si4884BDY product line targets high-efficiency power conversion in space-constrained applications, delivering trench-based low-RDS(on) MOSFETs optimized for PWM switching and synchronous rectification.
FAQ
What is the maximum continuous drain current for SI4884BDY-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI4884BDY-T1-GE3 is 13.2 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied in thermal design calculations for SI4884BDY-T1-GE3 layouts without active cooling.
Does SI4884BDY-T1-GE3 support 3.3 V logic-level gate drive?
Yes, SI4884BDY-T1-GE3 supports 3.3 V logic-level gate drive: its gate threshold voltage VGS(th) is 1–3 V, and RDS(on) = 0.012 Ω is guaranteed at VGS = 4.5 V with ID = 8 A. At 3.3 V, the device remains enhanced but with higher on-resistance; system validation is recommended for target current levels.
What is the avalanche energy rating for SI4884BDY-T1-GE3?
The single-pulse avalanche energy rating for SI4884BDY-T1-GE3 is EAS = 11 mJ, measured under L = 0.1 mH with IAS = 15 A. This rating applies to transient overvoltage events such as inductive load switching and confirms ruggedness beyond standard SOA limits - a key specification for SI4884BDY-T1-GE3 in motor and relay drive applications.
How does the body diode performance of SI4884BDY-T1-GE3 compare to standard MOSFETs?
SI4884BDY-T1-GE3 features a tailored body diode with trr = 25–40 ns and Qrr = 15–25 nC, significantly faster than generic MOSFETs. This enables efficient synchronous rectification in buck converters, reducing reverse recovery losses and EMI - a verified characteristic documented in the SI4884BDY-T1-GE3 datasheet's "Drain-Source Body Diode Characteristics" section.
Is SI4884BDY-T1-GE3 RoHS and halogen-free compliant?
Yes, SI4884BDY-T1-GE3 is both RoHS-compliant and halogen-free per IEC 61249-2-21, as explicitly stated in the ordering information and features list. The "-GE3" suffix denotes lead-free and halogen-free construction, confirmed in Vishay's official documentation for SI4884BDY-T1-GE3.
SI4884BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1525 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 4.45W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4884BDY-T1-GE3 FAQ
1.How can I place an order for SI4884BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4884BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4884BDY-T1-GE3 reliable?
The price and inventory of SI4884BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4884BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4884BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4884BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4884BDY-T1-GE3?
SI4884BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4884BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4884BDY-T1-GE3?
For technical support, including SI4884BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4884BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4884BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4884BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4884BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4884BDY-T1-GE3?
All SI4884BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4884BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4884BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4884BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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