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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4890BDY-T1-E3

Name: SI4890BDY-T1-E3
Brand: Vishay Siliconix
SKU: SI4890BDY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4890BDY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4890BDY-T1-E3.pdf

Description:: MOSFET N-CH 30V 16A 8SO

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Product details

Overview

SI4890BDY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, delivering 16 A continuous drain current at T_C = 25 °C, R_DS(on) = 0.012 Ω at V_GS = 10 V, and 10 nC total gate charge - optimized for notebook system power and DC/DC converter high-side switching.

For engineers reviewing the SI4890BDY-T1-E3 datasheet, SI4890BDY-T1-E3 pinout, SI4890BDY-T1-E3 application, or SI4890BDY-T1-E3 equivalent, key selection criteria include its 30-V V_DS, low R_DS(on) at 4.5-V drive, 100% R_g and UIS tested reliability, and Pb-free/halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET uses trench-based silicon technology to achieve low on-resistance and fast switching with controlled Q_g (10–15 nC at 4.5 V) and low C_iss (1535 pF), enabling efficient operation in synchronous buck converters and adapter switch circuits. Its gate threshold voltage (1.4–2.6 V) supports logic-level drive compatibility.

The device features a robust body diode with t_rr = 24–40 ns and Q_rr = 18–30 nC, and is characterized for operation across –55 °C to +150 °C junction temperature range, with R_thJA = 40–50 °C/W (1" × 1" FR4 board).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage suitable for 24-V input rails and notebook main power domains
R_DS(on)	0.012 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 10 A, critical for thermal management in compact adapters
I_D (continuous)	16 A @ T_C = 25 °C - supports high-current load points in DC/DC output stages without forced cooling
Q_g	10 nC @ V_GS = 4.5 V - ensures fast turn-on with low gate driver power demand in 5-V control systems
t_r/t_f	8–20 ns - minimizes switching losses in 300–1000 kHz DC/DC converters
V_GS(th)	1.4–2.6 V - compatible with 3.3-V and 5-V microcontroller GPIOs for direct drive applications
R_thJA	40–50 °C/W - defines thermal derating envelope on standard PCB layouts without heatsink

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal performance; pin 1–8 arranged in dual-row configuration with three source pins (pins 1, 2, 3), three drain pins (pins 5, 6, 7), one gate (pin 4), and one additional drain (pin 8).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Parallel low-inductance source connection reduces conduction loss and improves current sharing
4	Gate	Single control terminal requiring ≤10 nC charge for full enhancement at 4.5 V
5, 6, 7, 8	Drain	Four parallel drain terminals tied to exposed thermal pad - primary heat path to PCB ground plane

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.012 Ω R_DS(on) at 10 V while maintaining rugged avalanche capability (E_AS = 20 mJ)
100% R_g and UIS tested	Guarantees gate resistance consistency and single-pulse avalanche survivability up to 20 A/20 mJ
Halogen-free construction	Meets IEC 61249-2-21 requirements without compromising thermal or electrical performance
Low Q_gd/Q_g ratio	2.6/10 nC at 4.5 V - improves hard-switching efficiency and reduces Miller-induced shoot-through risk
Body diode t_rr	24–40 ns - enables reliable synchronous rectification in buck converters without external Schottky

Applications

Notebook System Power	Adapter Switch
Use Scenario: High-efficiency 12-V to 5-V/3.3-V point-of-load regulation in ultrabook mainboard VRMs. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in dual-phase buck converter stage. Use Value: 0.012 Ω R_DS(on) at 10 V reduces conduction loss by >35% vs. legacy 30-V MOSFETs, extending battery runtime.	Use Scenario: Primary-side switching element in 65-W AC/DC laptop adapter power supply. IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward or LLC resonant topology. Use Value: 30-V rating and 60-A pulsed current capability support high peak currents during transient load steps.
DC/DC Converter	Industrial SMPS
Use Scenario: Secondary-side synchronous rectifier in isolated 48-V to 12-V telecom DC/DC module. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification circuit with 4.5-V gate drive. Use Value: 0.016 Ω R_DS(on) at 4.5 V enables >95% efficiency at 10-A load without gate boost circuitry.	Use Scenario: Input-stage switch in 24-V industrial DC/DC converter for PLC I/O modules. IC Role / Device Role / Timing Role: High-reliability power switch operating continuously at 70 °C ambient. Use Value: 12.9-A continuous rating at T_C = 70 °C and 150 °C max junction temperature ensure long-term stability.

Notebook System Power

Adapter Switch

Use Scenario: High-efficiency 12-V to 5-V/3.3-V point-of-load regulation in ultrabook mainboard VRMs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in dual-phase buck converter stage.

Use Value: 0.012 Ω R_DS(on) at 10 V reduces conduction loss by >35% vs. legacy 30-V MOSFETs, extending battery runtime.

Use Scenario: Primary-side switching element in 65-W AC/DC laptop adapter power supply.

IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward or LLC resonant topology.

Use Value: 30-V rating and 60-A pulsed current capability support high peak currents during transient load steps.

DC/DC Converter

Industrial SMPS

Use Scenario: Secondary-side synchronous rectifier in isolated 48-V to 12-V telecom DC/DC module.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification circuit with 4.5-V gate drive.

Use Value: 0.016 Ω R_DS(on) at 4.5 V enables >95% efficiency at 10-A load without gate boost circuitry.

Use Scenario: Input-stage switch in 24-V industrial DC/DC converter for PLC I/O modules.

IC Role / Device Role / Timing Role: High-reliability power switch operating continuously at 70 °C ambient.

Use Value: 12.9-A continuous rating at T_C = 70 °C and 150 °C max junction temperature ensure long-term stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.014 Ω @ 10 V; higher Q_g = 16 nC; TO-252 package	Larger footprint and lower thermal conductivity than SO-8; less suitable for space-constrained adapters	Prefer SI4890BDY-T1-E3 where board area and thermal performance are critical
DMN3025LSD-13	R_DS(on) = 0.013 Ω @ 10 V; SO-8; but only 100% R_g tested (no UIS data published)	Lacks documented avalanche energy rating; not recommended for unclamped inductive switching	Select SI4890BDY-T1-E3 when robustness under transient overcurrent is required

Compared with IRF7470PBF and DMN3025LSD-13, SI4890BDY-T1-E3 offers superior thermal dissipation in SO-8, verified UIS capability, and lower gate charge - making it optimal for high-density, high-reliability notebook and adapter designs where layout space and transient immunity are constrained.

Availability

SI4890BDY-T1-E3 is available at Aetrix Electronics and suitable for notebook system power, adapter switch, and DC/DC converter applications requiring stable component supply, Pb-free compliance, and consistent parametric performance across production lots.

Supply support for SI4890BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The Si4890BDY product line targets high-current, low-voltage power conversion in portable computing and power adapter systems, prioritizing low R_DS(on), fast switching, and ruggedness in compact surface-mount packages.

FAQ

What is the maximum continuous drain current for SI4890BDY-T1-E3 at 70 °C case temperature?

The SI4890BDY-T1-E3 supports 12.9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied when designing for sustained operation in thermally constrained environments such as sealed notebook chassis or enclosed adapters.

Does SI4890BDY-T1-E3 support 4.5-V gate drive in practical applications?

Yes, SI4890BDY-T1-E3 is fully characterized for 4.5-V gate drive: R_DS(on) = 0.016 Ω at V_GS = 4.5 V and I_D = 8 A, with Q_g = 10–15 nC. Its V_GS(th) range of 1.4–2.6 V ensures reliable turn-on with standard 4.5-V logic outputs, making SI4890BDY-T1-E3 suitable for direct microcontroller or PWM controller drive without level-shifting.

What is the avalanche energy rating of SI4890BDY-T1-E3 and how is it validated?

The SI4890BDY-T1-E3 has a rated single-pulse avalanche energy (E_AS) of 20 mJ, measured under standardized test conditions (L = 0.1 mH, I_AS = 20 A). This rating is confirmed by 100% UIS (Unclamped Inductive Switching) testing per Vishay's quality protocol, ensuring each SI4890BDY-T1-E3 unit meets this ruggedness specification before shipment.

How does the SO-8 package of SI4890BDY-T1-E3 improve thermal performance compared to standard SO-8 MOSFETs?

The SI4890BDY-T1-E3 uses an enhanced SO-8 package with an exposed drain pad that connects directly to the PCB ground plane, achieving R_thJF = 18–22 °C/W (junction-to-foot). This design lowers thermal resistance by ~30% versus conventional SO-8, allowing higher power density in compact layouts - a key advantage for SI4890BDY-T1-E3 in space-limited notebook VRMs and adapter PCBs.

Is SI4890BDY-T1-E3 compliant with halogen-free and RoHS requirements?

Yes, SI4890BDY-T1-E3 is both RoHS-compliant and halogen-free per IEC 61249-2-21. The "-E3" suffix explicitly denotes lead-free and halogen-free construction, verified through material declarations and process controls at Vishay Siliconix manufacturing sites. This makes SI4890BDY-T1-E3 suitable for environmentally regulated consumer and computing applications.

SI4890BDY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1535 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4890BDY-T1-E3 FAQ

1.How can I place an order for SI4890BDY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4890BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4890BDY-T1-E3 reliable?

The price and inventory of SI4890BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4890BDY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4890BDY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4890BDY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4890BDY-T1-E3?

SI4890BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4890BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4890BDY-T1-E3?

For technical support, including SI4890BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4890BDY-T1-E3 requirements.

6.How does Aetrix verify that SI4890BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4890BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4890BDY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4890BDY-T1-E3?

All SI4890BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4890BDY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4890BDY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4890BDY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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