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Vishay Siliconix SI4890BDY-T1-GE3
- Part No.:
- SI4890BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4890BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 16A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,081
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Product details
Overview
SI4890BDY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, delivering 16 A continuous drain current at TC = 25 °C, 0.012 Ω RDS(on) at VGS = 10 V, and 10 nC total gate charge. It serves as a high-efficiency synchronous rectifier or main switch in notebook system power and DC/DC converter stages.
For engineers reviewing the SI4890BDY-T1-GE3 datasheet, SI4890BDY-T1-GE3 pinout, SI4890BDY-T1-GE3 application, or SI4890BDY-T1-GE3 equivalent, key selection criteria include its halogen-free and lead-free compliance, 100 % Rg and UIS tested reliability, and thermal performance with RthJF = 18 °C/W (typical) for junction-to-foot conduction.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in high-frequency DC/DC topologies. Its gate threshold voltage (1.4–2.6 V) enables robust 4.5 V logic-level drive, while body diode recovery (trr = 24–40 ns, Qrr = 18–30 nC) supports synchronous rectification without external Schottky replacement.
The device operates across –55 to +150 °C junction temperature range and features guaranteed avalanche energy rating (EAS = 20 mJ) and pulsed drain current capability (IDM = 60 A), making it suitable for transient-heavy load-switching and adapter primary-side switching where ruggedness and thermal stability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines use in ≤30 V rail systems like notebook adapters and point-of-load converters. |
| RDS(on) | 0.012 Ω @ VGS = 10 V - Enables <0.5 W conduction loss at 10 A, reducing thermal stress in compact SO-8 footprint. |
| ID (cont.) | 16 A @ TC = 25 °C - Supports high-current output stages without forced air cooling on standard FR4 PCBs. |
| Qg | 10 nC @ VGS = 4.5 V - Low gate charge minimizes driver power and switching losses in 300–500 kHz DC/DC designs. |
| RthJF | 18 °C/W (typ.) - Efficient junction-to-drain thermal path allows direct mounting to copper pour or heatsinked ground plane. |
| VGS(th) | 1.4–2.6 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic controllers and avoids false triggering under noise. |
| trr / Qrr | 24–40 ns / 18–30 nC - Fast, low-charge body diode enables efficient synchronous rectification in buck converters. |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for thermal enhancement and mechanical robustness. Pin 1–8 arranged in dual-row configuration per JEDEC MS-012AC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–10 V logic-level signals; requires <1.5 Ω gate resistance to limit ringing during 10–22 ns turn-on delay. |
| 2, 3, 4, 5, 7, 8 (D) | Drain | High-side or low-side power node; pins 2/3/4/5/7/8 internally tied to exposed drain pad for low-inductance, high-current return path. |
| 6 (S) | Source | Reference node for gate drive and current sensing; connects to power ground or source of complementary FET in half-bridge. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit (0.12 Ω·nC) for high-frequency efficiency in space-constrained adapters. |
| 100 % Rg and UIS tested | Each unit undergoes production gate resistance screening and unclamped inductive switching validation to ensure avalanche ruggedness in real-world transients. |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU; eliminates brominated flame retardants and lead in solder-reflow assembly. |
| Exposed drain thermal pad | Enables 18 °C/W typical junction-to-foot thermal resistance-critical for maintaining TJ < 125 °C in sealed notebook chassis. |
Applications
| Notebook System Power | Notebook Adapter Switch |
|---|---|
Use Scenario: Primary-side high-side switch in 19 V/4.74 A AC-DC adapter for ultrabooks. IC Role / Device Role / Timing Role: Main power switch operating at 300 kHz PWM with synchronous rectification on secondary side. Use Value: 0.012 Ω RDS(on) limits conduction loss to 0.57 W at full load, enabling thermally compliant 20 mm × 20 mm PCB area allocation. | Use Scenario: Secondary-side synchronous rectifier in 5 V/3 A USB-C PD output stage. IC Role / Device Role / Timing Role: Low-side rectifying FET driven by controller's gate signal with 10 nC Qg enabling <20 ns switching transitions. Use Value: Body diode trr = 24 ns and Qrr = 18 nC reduce reverse-recovery loss by >40 % vs. discrete Schottky alternatives. |
| DC/DC Buck Converter | Industrial 24 V Input Module |
Use Scenario: High-side switch in 12 V input → 3.3 V output buck regulator for embedded controller supply. IC Role / Device Role / Timing Role: Fast-switching N-channel FET with 11 ns td(on) at 10 V drive, supporting 1 MHz operation. Use Value: Ciss = 1535 pF and Crss = 106 pF minimize Miller effect, sustaining stable gate control under high dV/dt conditions. | Use Scenario: Load switch controlling 24 V auxiliary rail in programmable logic controller (PLC) backplane. IC Role / Device Role / Timing Role: Inrush-limited, fault-protected high-side switch with 60 A IDM rating for hot-swap capability. Use Value: EAS = 20 mJ and TJ range of –55 to +150 °C ensure survival during 48 V surge events and extended industrial temperature cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.014 Ω @ 10 V; Qg = 12 nC; SO-8 but no exposed drain pad. | Lacks integrated thermal pad → RthJA = 62 °C/W (vs. 40 °C/W typ. for SI4890BDY-T1-GE3); unsuitable for thermally dense notebook adapters. | Select when board-level heatsinking is unavailable and lower cost outweighs thermal margin loss. |
| DMN3020LSD-13 | RDS(on) = 0.013 Ω @ 10 V; Qg = 11.5 nC; dual-N in SO-8; shares same footprint but different pinout (G-S-D layout). | Not pin-compatible - gate and source swapped; requires PCB redesign; intended for dual-FET half-bridge rather than single-switch use. | Choose only if redesigning for integrated half-bridge topology and needing matched dual-device characteristics. |
Compared with IRF7470PBF and DMN3020LSD-13, SI4890BDY-T1-GE3 provides superior thermal performance via its exposed drain pad, verified avalanche ruggedness, and strict halogen-free compliance-making it the preferred choice for high-reliability, space-constrained notebook and industrial DC/DC applications where thermal headroom and environmental compliance are non-negotiable.
Availability
SI4890BDY-T1-GE3 is available at Aetrix Electronics and suitable for notebook system power, adapter switching, and DC/DC converter designs requiring stable component supply, halogen-free compliance, and proven avalanche-rated MOSFET performance.
Supply support for SI4890BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across automotive, industrial, and computing markets.
The Si4890BDY product line targets high-density, high-efficiency power conversion in portable computing and adapter applications, leveraging TrenchFET® technology to deliver low RDS(on) and fast switching in standard SO-8 packages.
FAQ
What is the maximum continuous drain current rating for SI4890BDY-T1-GE3 at 70 °C case temperature?
The SI4890BDY-T1-GE3 supports 12.9 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained power dissipation; design margins should maintain TJ ≤ 150 °C using the 18 °C/W typical junction-to-foot thermal resistance. The SI4890BDY-T1-GE3 datasheet confirms this value under steady-state conditions with proper PCB copper pour.
Is SI4890BDY-T1-GE3 suitable for synchronous rectification in a 5 V output buck converter?
Yes, SI4890BDY-T1-GE3 is well-suited for synchronous rectification due to its low 0.012 Ω RDS(on) at 10 V and fast body diode characteristics (trr = 24–40 ns, Qrr = 18–30 nC). When used as the low-side FET in a 5 V buck stage, the SI4890BDY-T1-GE3 reduces conduction loss versus Schottky diodes and enables >95 % efficiency at 3 A load. Its 10 nC Qg also simplifies gate drive design at 500 kHz switching frequencies.
Does SI4890BDY-T1-GE3 have a qualified avalanche rating?
Yes, SI4890BDY-T1-GE3 is rated for 20 mJ single-pulse avalanche energy (EAS) and 20 A single-pulse avalanche current (IAS) under standardized test conditions (L = 0.1 mH). These values are 100 % production-tested per Vishay's UIS screening, confirming ruggedness against inductive switching transients in adapter and DC/DC applications where the SI4890BDY-T1-GE3 may experience unclamped inductive loads.
What is the gate threshold voltage range for SI4890BDY-T1-GE3, and how does it affect logic-level drive?
The SI4890BDY-T1-GE3 has a gate threshold voltage (VGS(th)) range of 1.4 V to 2.6 V at ID = 250 µA. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while avoiding spurious conduction from noise. At VGS = 4.5 V, the SI4890BDY-T1-GE3 delivers 14 A ID and 0.016 Ω RDS(on), making it fully compatible with PWM controllers lacking dedicated high-side gate drivers.
How does the thermal performance of SI4890BDY-T1-GE3 compare between junction-to-ambient and junction-to-foot metrics?
SI4890BDY-T1-GE3 specifies RthJA = 40–50 °C/W (typ./max) for junction-to-ambient on 1" × 1" FR4, but achieves RthJF = 18–22 °C/W (typ./max) junction-to-foot-reflecting its exposed drain pad's direct thermal path to PCB copper. For thermal design, RthJF governs heat transfer when the drain is soldered to large copper areas, while RthJA applies to ambient-convection-limited scenarios. Both values are validated in the SI4890BDY-T1-GE3 datasheet under defined test conditions.
SI4890BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1535 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4890BDY-T1-GE3 FAQ
1.How can I place an order for SI4890BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4890BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4890BDY-T1-GE3 reliable?
The price and inventory of SI4890BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4890BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4890BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4890BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4890BDY-T1-GE3?
SI4890BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4890BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4890BDY-T1-GE3?
For technical support, including SI4890BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4890BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4890BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4890BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4890BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4890BDY-T1-GE3?
All SI4890BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4890BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4890BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4890BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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