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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4890DY-T1-E3

Name: SI4890DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4890DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4890DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4890DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 11A 8-SOIC

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Product details

Overview

SI4890DY-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for high-efficiency PWM switching in DC-DC converters and load switches. It features 30 V V_DS, 0.012 Ω R_DS(on) at 10 V_GS, ±11 A continuous drain current, SO-8 package, and halogen-free construction per IEC 61249-2-21.

For engineers reviewing the SI4890DY-T1-E3 datasheet, SI4890DY-T1-E3 pinout, SI4890DY-T1-E3 application, or SI4890DY-T1-E3 equivalent, key selection criteria include its low gate charge (14.2 nC typ), fast switching (t_d(on) = 13 ns), thermal resistance (R_thJA = 70 °C/W), and compatibility with 4.5 V logic-level drive in compact board space-constrained designs.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve reduced gate charge and enhanced switching speed while maintaining low on-resistance. Its threshold voltage (0.8 V min) and transconductance (21 S typ) support stable turn-on under low-voltage control signals, and its body diode exhibits 0.71 V forward voltage at 2.3 A.

The device is characterized for operation across -55 °C to +150 °C junction temperature, with guaranteed R_DS(on) performance at both 10 V and 4.5 V gate drive, enabling use in synchronous rectification and high-frequency buck converter topologies where conduction and switching losses must be jointly minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage suitable for 24 V rail and automotive 12 V systems
R_DS(on) @ 10 V_GS	0.012 Ω - Enables <132 mW conduction loss at 11 A, critical for thermally constrained PCBs
R_DS(on) @ 4.5 V_GS	0.020 Ω - Supports direct drive from 3.3 V/5 V microcontrollers without level-shifting
Q_g	14.2 nC typ - Reduces gate driver power demand and enables >1 MHz switching in SMPS
t_d(on)	13 ns typ - Minimizes dead-time overlap loss in half-bridge configurations
T_J Range	-55 °C to +150 °C - Qualified for industrial and under-hood automotive ambient conditions
P_D @ 25 °C	2.5 W - Limits thermal pad area requirement in SO-8 footprint without heatsink

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain paddle for enhanced thermal dissipation. Standard narrow-body SOIC layout compatible with IPC-7351B footprint recommendations.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to common drain terminal and exposed thermal pad - primary current path and heat sink interface
8	Gate (G)	Control input requiring low-charge drive; sensitive to ESD - requires series resistor for ringing suppression
S (pins not numbered separately)	Source (S)	Common source node formed by pins 1–3 and 5–7 in parallel configuration - defines reference for gate drive and current sensing

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs, improving efficiency in high-frequency switching
Halogen-free construction	Meets IEC 61249-2-21 definition - supports RoHS-compliant manufacturing and end-of-life recycling requirements
Low 4.5 V R_DS(on)	Enables full enhancement with standard logic-level outputs, eliminating need for dedicated gate drivers in space-constrained modules
Fast dynamic response	13 ns turn-on delay and 8.5 ns rise time reduce switching transition losses in synchronous buck regulators
Thermal robustness	Rated for 150 °C junction operation with R_thJA = 70 °C/W - allows reliable operation in sealed enclosures without forced airflow

Applications

DC-DC Buck Converter	Hot-Swap Controller
Use Scenario: High-efficiency 12 V to 3.3 V step-down conversion in server VRMs and telecom power supplies. IC Role / Device Role: Synchronous high-side switch managing main power path with precise duty-cycle control. Use Value: 0.012 Ω R_DS(on) at 10 V_GS reduces conduction loss by >35% vs. comparable 30 V MOSFETs, directly improving full-load efficiency.	Use Scenario: Inrush current limiting during live insertion of PCIe add-in cards or modular computing blades. IC Role / Device Role: Low-loss series pass element controlled by external current-sense amplifier and comparator. Use Value: 0.020 Ω R_DS(on) at 4.5 V_GS ensures minimal voltage drop (<180 mV at 9 A), preserving downstream rail stability during hot-plug events.
Motor Drive H-Bridge	USB Power Delivery Switch
Use Scenario: Bidirectional 24 V brushed DC motor control in industrial actuators and robotics joints. IC Role / Device Role: Low-side switching quadrant with fast fall time (17 ns) minimizing shoot-through risk during direction reversal. Use Value: 50 A pulsed drain rating and 35 ns turn-off delay enable safe commutation at 20 kHz PWM without external snubbers.	Use Scenario: Overcurrent-protected 5–20 V USB-C power path in portable docking stations and multi-port chargers. IC Role / Device Role: Load switch isolating VBUS from host system during fault conditions detected by PD controller. Use Value: Integrated body diode with 0.71 V V_SD supports reverse-current blocking during CC logic negotiation without external Schottky.

DC-DC Buck Converter

Hot-Swap Controller

Use Scenario: High-efficiency 12 V to 3.3 V step-down conversion in server VRMs and telecom power supplies.

IC Role / Device Role: Synchronous high-side switch managing main power path with precise duty-cycle control.

Use Value: 0.012 Ω R_DS(on) at 10 V_GS reduces conduction loss by >35% vs. comparable 30 V MOSFETs, directly improving full-load efficiency.

Use Scenario: Inrush current limiting during live insertion of PCIe add-in cards or modular computing blades.

IC Role / Device Role: Low-loss series pass element controlled by external current-sense amplifier and comparator.

Use Value: 0.020 Ω R_DS(on) at 4.5 V_GS ensures minimal voltage drop (<180 mV at 9 A), preserving downstream rail stability during hot-plug events.

Motor Drive H-Bridge

USB Power Delivery Switch

Use Scenario: Bidirectional 24 V brushed DC motor control in industrial actuators and robotics joints.

IC Role / Device Role: Low-side switching quadrant with fast fall time (17 ns) minimizing shoot-through risk during direction reversal.

Use Value: 50 A pulsed drain rating and 35 ns turn-off delay enable safe commutation at 20 kHz PWM without external snubbers.

Use Scenario: Overcurrent-protected 5–20 V USB-C power path in portable docking stations and multi-port chargers.

IC Role / Device Role: Load switch isolating VBUS from host system during fault conditions detected by PD controller.

Use Value: Integrated body diode with 0.71 V V_SD supports reverse-current blocking during CC logic negotiation without external Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.013 Ω @ 10 V_GS; Q_g = 22 nC - higher gate charge increases driver loss	Requires stronger gate driver for same switching frequency; less suitable for 4.5 V logic drive	Prefer SI4890DY-T1-E3 when gate drive voltage ≤5 V or switching frequency >500 kHz
DMN3025LSD-13	R_DS(on) = 0.025 Ω @ 4.5 V_GS; SO-8 but dual-N configuration - single-channel functionality differs	Not a drop-in replacement due to dual-die layout and different pinout; requires PCB redesign	Select SI4890DY-T1-E3 for single-channel, low-R_DS(on) 4.5 V drive in existing SO-8 layouts

Compared with IRF7470PBF and DMN3025LSD-13, SI4890DY-T1-E3 delivers superior 4.5 V drive capability and lowest Q_g/R_DS(on) trade-off in standard SO-8, making it optimal for high-density, high-frequency DC-DC and load-switching applications where gate drive strength and thermal headroom are constrained.

Availability

SI4890DY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and motor drive H-bridges requiring stable component supply, consistent parametric performance, and lead-free compliance.

Supply support for SI4890DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and resistive solutions for industrial, automotive, and computing markets.

The Si4890DY product line targets high-efficiency, high-frequency power switching applications - specifically engineered for PWM-controlled DC-DC conversion, load switching, and motor control where low R_DS(on), fast switching, and logic-level compatibility are essential.

FAQ

What is the maximum continuous drain current rating for SI4890DY-T1-E3 at 70 °C ambient?

The SI4890DY-T1-E3 supports ±9 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package with standard FR4 mounting. At TJ = 150 °C, the device maintains this current capability, provided PCB copper area and airflow meet Vishay's recommended thermal design guidelines for the SO-8 footprint.

Does SI4890DY-T1-E3 support 3.3 V logic-level gate drive?

The SI4890DY-T1-E3 is characterized down to 4.5 V_GS, with R_DS(on) = 0.020 Ω at ID = 9 A. While it may partially enhance at 3.3 V, Vishay does not guarantee performance below 4.5 V. For reliable 3.3 V operation, consider devices explicitly rated for 2.5 V or 3.3 V logic drive - the SI4890DY-T1-E3 should be used with ≥4.5 V gate drive to ensure full conduction and avoid thermal runaway.

What is the thermal resistance junction-to-ambient for SI4890DY-T1-E3 in steady-state conditions?

The SI4890DY-T1-E3 has a maximum steady-state junction-to-ambient thermal resistance (R_thJA) of 70 °C/W when mounted on a standard FR4 PCB per Vishay's recommended layout. This value assumes no additional heatsinking and accounts for convection and conduction through the SO-8 leads and exposed drain paddle. For improved thermal performance, increase copper area under the drain pad and use multiple thermal vias to inner ground planes.

Is SI4890DY-T1-E3 suitable for synchronous rectification in a 30 V output DC-DC converter?

Yes, the SI4890DY-T1-E3 is well-suited for synchronous rectification in ≤30 V output converters. Its low R_DS(on) (0.012 Ω @ 10 V_GS), fast switching (t_f = 17 ns), and integrated body diode (V_SD = 0.71 V @ 2.3 A) minimize conduction and reverse recovery losses. Ensure gate drive timing avoids shoot-through, and verify layout minimizes source inductance to preserve switching fidelity in the SI4890DY-T1-E3.

What packaging and environmental compliance does SI4890DY-T1-E3 meet?

The SI4890DY-T1-E3 is supplied in tape-and-reel format (T1) and is lead (Pb)-free per JEDEC J-STD-609. It complies with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. The "E3" suffix denotes lead-free plating and conforms to Vishay's green manufacturing standards - no exemptions applied, fully compliant for consumer, industrial, and automotive applications.

SI4890DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 800mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4890DY-T1-E3 FAQ

1.How can I place an order for SI4890DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4890DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4890DY-T1-E3 reliable?

The price and inventory of SI4890DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4890DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4890DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4890DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4890DY-T1-E3?

SI4890DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4890DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4890DY-T1-E3?

For technical support, including SI4890DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4890DY-T1-E3 requirements.

6.How does Aetrix verify that SI4890DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4890DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4890DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4890DY-T1-E3?

All SI4890DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4890DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4890DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4890DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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