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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4890DY-T1-GE3

Name: SI4890DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4890DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4890DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4890DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 11A 8-SOIC

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Product details

Overview

SI4890DY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for high-efficiency PWM switching in DC-DC converters and load switches. It features 30 V V_DS, 11 A continuous drain current at 25 °C, 0.012 Ω R_DS(on) at V_GS = 10 V, and SO-8 package with halogen-free and RoHS-compliant construction. It is used in synchronous buck converter high-side/low-side switching stages.

For engineers reviewing the SI4890DY-T1-GE3 datasheet, SI4890DY-T1-GE3 pinout, SI4890DY-T1-GE3 application, or SI4890DY-T1-GE3 equivalent, key selection criteria include its low gate charge (14.2 nC typ.), fast switching times (t_d(on) = 13 ns, t_f = 17 ns), and thermal resistance (R_thJA = 70 °C/W steady-state) for compact power stage design.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve reduced gate charge and enhanced switching efficiency. Its threshold voltage (V_GS(th) = 0.8 V min) enables reliable turn-on with 4.5 V logic-level drive, while its 0.020 Ω R_DS(on) at V_GS = 4.5 V supports efficient operation in 5 V and 3.3 V control systems.

The device integrates a body diode with 0.71 V forward voltage at 2.3 A and exhibits reverse recovery time (t_rr = 35 ns typ.) suitable for synchronous rectification. Its absolute maximum V_GS rating of ±25 V and junction temperature range of −55 °C to +150 °C support robust operation in industrial and automotive ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus applications
R_DS(on) @ V_GS = 10 V	0.012 Ω - Enables ≤1.5 W conduction loss at 11 A continuous current
R_DS(on) @ V_GS = 4.5 V	0.020 Ω - Supports direct drive from 5 V microcontrollers without level-shifting
Q_g	14.2 nC typ. - Reduces gate driver power demand and switching transition time
t_f	17 ns typ. - Limits overlap loss during hard-switched PWM transitions
R_thJA (steady-state)	70 °C/W - Requires ≥1.6 cm² copper pour on FR4 for 1.6 W dissipation at 70 °C ambient
V_GS(th)	0.8 V min - Ensures full enhancement with standard logic-level gate signals

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to common drain terminal and exposed thermal pad - primary current path and heat sink interface
8	Gate (G)	Control input requiring <15 nC total charge for full enhancement - sensitive to ESD and layout parasitics
Source (S)	Source (S)	Pin 1–7 are drain; source is internal connection only - external source connection made via PCB trace to gate driver return

Key Features

Feature	Design Value
TrenchFET® architecture	Reduces Q_g/R_DS(on) ratio by >25% vs. planar MOSFETs at same voltage class
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC - required for consumer and industrial end-equipment certification
Low R_DS(on) at 4.5 V	Enables use in 5 V logic-driven half-bridge configurations without gate boosting
Fast switching with low C_iss/C_oss	Minimizes switching losses in 500 kHz–1 MHz DC-DC converters
Enhanced body diode performance	35 ns t_rr and 0.71 V V_SD reduce reverse recovery loss in synchronous rectifier mode

Applications

DC-DC Synchronous Buck Converter	Hot-Swap Load Switch
Use Scenario: Primary high-side or low-side switch in 12 V input → 3.3 V/5 V output point-of-load converters. IC Role / Device Role: Power switching element controlling energy transfer into output inductor and capacitor. Use Value: 0.012 Ω R_DS(on) and 14.2 nC Q_g enable >94% peak efficiency at 10 A load with minimal thermal derating.	Use Scenario: Inrush current limiting and fault protection for hot-pluggable modules in telecom line cards. IC Role / Device Role: Controlled series pass element enabling soft-start and overcurrent shutdown. Use Value: ±25 V V_GS rating and 50 A pulsed drain capability support robust fault handling without external crowbar circuits.
Motor Driver Half-Bridge	USB-C Power Delivery Switch
Use Scenario: Low-voltage H-bridge leg in brushed DC motor drivers for robotics and portable tools. IC Role / Device Role: Bidirectional current-handling switch supporting forward/reverse polarity control. Use Value: Symmetrical ±11 A continuous rating and low 0.020 Ω R_DS(on) at 4.5 V ensure balanced conduction loss in both directions.	Use Scenario: VBUS path switch in USB-C PD 3.0 compliant power adapters and docking stations. IC Role / Device Role: Bidirectional 20 V-rated power path controller managing source/sink directionality. Use Value: 30 V V_DS margin and 0.71 V body diode forward drop minimize insertion loss in 20 V PD profiles.

DC-DC Synchronous Buck Converter

Hot-Swap Load Switch

Use Scenario: Primary high-side or low-side switch in 12 V input → 3.3 V/5 V output point-of-load converters.

IC Role / Device Role: Power switching element controlling energy transfer into output inductor and capacitor.

Use Value: 0.012 Ω R_DS(on) and 14.2 nC Q_g enable >94% peak efficiency at 10 A load with minimal thermal derating.

Use Scenario: Inrush current limiting and fault protection for hot-pluggable modules in telecom line cards.

IC Role / Device Role: Controlled series pass element enabling soft-start and overcurrent shutdown.

Use Value: ±25 V V_GS rating and 50 A pulsed drain capability support robust fault handling without external crowbar circuits.

Motor Driver Half-Bridge

USB-C Power Delivery Switch

Use Scenario: Low-voltage H-bridge leg in brushed DC motor drivers for robotics and portable tools.

IC Role / Device Role: Bidirectional current-handling switch supporting forward/reverse polarity control.

Use Value: Symmetrical ±11 A continuous rating and low 0.020 Ω R_DS(on) at 4.5 V ensure balanced conduction loss in both directions.

Use Scenario: VBUS path switch in USB-C PD 3.0 compliant power adapters and docking stations.

IC Role / Device Role: Bidirectional 20 V-rated power path controller managing source/sink directionality.

Use Value: 30 V V_DS margin and 0.71 V body diode forward drop minimize insertion loss in 20 V PD profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.014 Ω @ 10 V; Q_g = 22 nC; SO-8 package	Higher gate charge increases driver loss and slows switching vs. SI4890DY-T1-GE3	Prefer SI4890DY-T1-GE3 where <15 nC Q_g is critical for high-frequency operation
DMN3025LSD-13	R_DS(on) = 0.025 Ω @ 4.5 V; dual N-channel in SO-8; no halogen-free marking	Dual configuration adds routing complexity; higher R_DS(on) raises conduction loss at 5 V drive	Choose SI4890DY-T1-GE3 for single-channel, halogen-free, and lower 4.5 V R_DS(on) requirements

Compared with IRF7470PBF and DMN3025LSD-13, SI4890DY-T1-GE3 delivers superior gate charge efficiency and tighter 4.5 V on-resistance-making it optimal for space-constrained, high-frequency DC-DC stages where thermal headroom and driver simplicity are design priorities.

Availability

SI4890DY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and motor driver half-bridges requiring stable component supply, halogen-free compliance, and consistent SO-8 thermal performance.

Supply support for SI4890DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics.

The Si4890DY product line targets high-efficiency, logic-level power switching in space-constrained industrial and computing power supplies, emphasizing low Q_g, fast switching, and thermally robust packaging.

FAQ

What is the maximum continuous drain current rating for SI4890DY-T1-GE3 at 70 °C ambient?

The SI4890DY-T1-GE3 supports ±9 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)" with derating applied per thermal resistance. This value assumes proper PCB copper area and still-air conditions per JEDEC JESD51-2.

Does SI4890DY-T1-GE3 have a specified body diode reverse recovery time?

Yes, the SI4890DY-T1-GE3 specifies source-drain reverse recovery time (t_rr) as 35 ns typical and 70 ns maximum at IF = 2.3 A and dI/dt = 100 A/µs. This parameter is measured under defined test conditions and supports synchronous rectifier use in buck converters.

Is SI4890DY-T1-GE3 compatible with lead-free reflow soldering processes?

Yes, SI4890DY-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020. Its maximum peak reflow temperature is 260 °C (10-second dwell), and it carries the "-T1-GE3" suffix indicating lead-free and halogen-free construction per IEC 61249-2-21.

What is the gate threshold voltage range for SI4890DY-T1-GE3?

The SI4890DY-T1-GE3 has a gate threshold voltage (V_GS(th)) minimum of 0.8 V at V_DS = V_GS and I_D = 250 µA. The typical value is 1.2 V, and maximum is not specified - confirming reliable turn-on with 3.3 V and 5 V logic-level gate drivers.

How does the thermal resistance of SI4890DY-T1-GE3 impact PCB layout?

The SI4890DY-T1-GE3 has R_thJA = 70 °C/W (steady-state) on FR4. To maintain TJ ≤ 150 °C at 1.6 W dissipation, the PCB must provide ≥1.6 cm² of 2-oz copper connected to the exposed drain pad. Recommended minimum pads per Vishay Application Note 826 ensure adequate thermal conduction and mechanical reliability.

SI4890DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 800mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4890DY-T1-GE3 FAQ

1.How can I place an order for SI4890DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4890DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4890DY-T1-GE3 reliable?

The price and inventory of SI4890DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4890DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4890DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4890DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4890DY-T1-GE3?

SI4890DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4890DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4890DY-T1-GE3?

For technical support, including SI4890DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4890DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4890DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4890DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4890DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4890DY-T1-GE3?

All SI4890DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4890DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4890DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4890DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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