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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4894BDY-T1-E3

Name: SI4894BDY-T1-E3
Brand: Vishay Siliconix
SKU: SI4894BDY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4894BDY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4894BDY-T1-E3.pdf

Description:: MOSFET N-CH 30V 8.9A 8SO

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Product details

Overview

SI4894BDY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, delivering R_DS(on) = 0.011 Ω at V_GS = 10 V and 12 A continuous drain current at T_A = 25 °C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drivers.

For engineers reviewing the SI4894BDY-T1-E3 datasheet, SI4894BDY-T1-E3 pinout, SI4894BDY-T1-E3 application, or SI4894BDY-T1-E3 equivalent, key selection criteria include its low gate charge (Q_g = 25.4 nC @ 10 V), 100% R_g tested gate resistance, and halogen-free Pb-free construction per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in compact surface-mount applications. Its 30-V V_DS rating, ±20-V V_GS tolerance, and 1580-pF C_iss support stable operation in 24-V industrial bus and 12-V automotive subsystems.

The device integrates a body diode with V_SD = 0.76 V at I_S = 2.3 A and t_rr = 25 ns, enabling efficient freewheeling in buck converters and H-bridge motor control without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 24-V nominal rail systems with 25% headroom for transients
R_DS(on) @ 10 V	0.011 Ω - Enables ≤1.3 W conduction loss at 12 A, reducing thermal stress in SO-8 footprint
I_D (continuous)	12 A @ T_A = 25 °C - Sustains full-load current in space-constrained board-level power stages
Q_g @ 10 V	25.4 nC - Minimizes gate drive power and enables <20 ns turn-on delay with 6-Ω driver
C_iss	1580 pF - Predictable input capacitance for stable PWM timing and EMI filtering design
T_J range	–55 to +150 °C - Qualified for under-hood automotive and industrial ambient environments

Pinout & Package

SO-8 (MS-012) surface-mount package with standard narrow-body dimensions: 4.9 mm × 3.9 mm × 1.5 mm (D × E × A), 1.27-mm lead pitch, and exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (pins 1–4, 6–8), Source (pin 5), Gate (pin 2)	Pins 1–4 and 6–8 are internally bonded to drain; pin 5 is source; pin 2 is gate - requires PCB layout with drain-connected copper pour for thermal management

Key Features

Feature	Design Value
TrenchFET® architecture	Enables lower R_DS(on) per die area than planar MOSFETs, improving power density in SO-8
100% R_g tested	Guarantees gate resistance between 0.9–2.7 Ω, ensuring consistent switching speed and driver compatibility
Halogen-free construction	Meets IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment
Low Q_gd/Q_g ratio	Q_gd = 4.3 nC / Q_g = 25.4 nC → 17% - Reduces Miller effect, improving hard-switching robustness

Applications

DC-DC Synchronous Buck Converter	Automotive Body Control Module (BCM)
Use Scenario: High-efficiency 12-V to 3.3-V/5-V point-of-load conversion in infotainment head units. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin. Use Value: Achieves >94% efficiency at 8-A load due to 0.011-Ω R_DS(on), lowering junction temperature by 18 °C vs. diode solution.	Use Scenario: Load switching for LED lighting, window lift motors, and HVAC actuators in 12-V vehicle networks. IC Role / Device Role / Timing Role: N-channel high-side or low-side power switch controlled via microcontroller GPIO with level-shifting. Use Value: Withstands 30-V battery transients and delivers 9.8 A at 70 °C ambient, meeting ISO 7637-2 pulse 5a requirements.
Industrial Motor Drive Half-Bridge	USB-C Power Delivery Sink Switch
Use Scenario: 24-V brushed DC motor control in factory automation actuators and robotic joints. IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology, commutated at 20–50 kHz with dead-time control. Use Value: Fast 10-ns rise time and 15-ns fall time enable precise PWM duty-cycle control while limiting shoot-through risk.	Use Scenario: In-line power path switch for USB-C PD 3.0 sink applications requiring 3-A continuous current at 5–20 V. IC Role / Device Role / Timing Role: Load switch managing VBUS connection between upstream port and downstream device. Use Value: Low 0.016-Ω R_DS(on) at 4.5-V V_GS ensures <50-mV drop at 3 A, preserving voltage margin for PD negotiation.

DC-DC Synchronous Buck Converter

Automotive Body Control Module (BCM)

Use Scenario: High-efficiency 12-V to 3.3-V/5-V point-of-load conversion in infotainment head units.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: Achieves >94% efficiency at 8-A load due to 0.011-Ω R_DS(on), lowering junction temperature by 18 °C vs. diode solution.

Use Scenario: Load switching for LED lighting, window lift motors, and HVAC actuators in 12-V vehicle networks.

IC Role / Device Role / Timing Role: N-channel high-side or low-side power switch controlled via microcontroller GPIO with level-shifting.

Use Value: Withstands 30-V battery transients and delivers 9.8 A at 70 °C ambient, meeting ISO 7637-2 pulse 5a requirements.

Industrial Motor Drive Half-Bridge

USB-C Power Delivery Sink Switch

Use Scenario: 24-V brushed DC motor control in factory automation actuators and robotic joints.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology, commutated at 20–50 kHz with dead-time control.

Use Value: Fast 10-ns rise time and 15-ns fall time enable precise PWM duty-cycle control while limiting shoot-through risk.

Use Scenario: In-line power path switch for USB-C PD 3.0 sink applications requiring 3-A continuous current at 5–20 V.

IC Role / Device Role / Timing Role: Load switch managing VBUS connection between upstream port and downstream device.

Use Value: Low 0.016-Ω R_DS(on) at 4.5-V V_GS ensures <50-mV drop at 3 A, preserving voltage margin for PD negotiation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.012 Ω @ 10 V; higher C_iss = 1700 pF; TO-252 package	Larger footprint and higher thermal resistance (R_thJA = 62 °C/W) limit power density in space-constrained designs	Choose when board-level thermal mass supports DPAK mounting and higher gate drive energy is acceptable
DMN3028LSD-13	R_DS(on) = 0.013 Ω @ 10 V; dual N-channel in SO-8; no 100% R_g test	Shares same SO-8 footprint but lacks guaranteed gate resistance, increasing risk of inconsistent switching behavior	Prefer for dual-switch topologies where channel matching outweighs gate drive predictability

Compared with IRF7470PBF and DMN3028LSD-13, SI4894BDY-T1-E3 offers superior gate drive consistency via 100% R_g testing and lowest R_DS(on) in SO-8, making it optimal for thermally constrained, high-reliability single-channel switching.

Availability

SI4894BDY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, and industrial motor drives requiring stable component supply and Pb-free compliance.

Supply support for SI4894BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial and automotive markets.

The Si4894BDY-T1-E3 belongs to Vishay's TrenchFET® Gen IV N-channel MOSFET product line, engineered for ultra-low R_DS(on) and fast switching in compact surface-mount packages used in high-efficiency power conversion.

FAQ

What is the maximum continuous drain current for SI4894BDY-T1-E3 at 70 °C ambient temperature?

The SI4894BDY-T1-E3 supports 7.1 A continuous drain current at T_A = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This rating reflects derating due to thermal resistance (R_thJA = 90 °C/W max), and actual current capability improves with enhanced PCB copper area or forced airflow. The SI4894BDY-T1-E3 datasheet specifies this value in the Absolute Maximum Ratings table.

Does SI4894BDY-T1-E3 have a built-in body diode, and what is its forward voltage?

Yes, the SI4894BDY-T1-E3 integrates a parasitic body diode with V_SD = 0.76 V typical at I_S = 2.3 A and V_GS = 0 V. This diode enables freewheeling current in inductive loads and is characterized in the datasheet's "Diode Forward Voltage" specification. Its reverse recovery time (t_rr) is 25 ns, supporting efficient operation in synchronous rectification circuits using the SI4894BDY-T1-E3.

Is SI4894BDY-T1-E3 suitable for 4.5-V gate drive applications?

Yes, the SI4894BDY-T1-E3 is fully specified for 4.5-V gate drive: R_DS(on) = 0.016 Ω at V_GS = 4.5 V and I_D = 9.8 A. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, ensuring reliable turn-on with logic-level microcontrollers. This makes the SI4894BDY-T1-E3 appropriate for 5-V and 3.3-V control interfaces without level-shifting circuitry.

What is the total gate charge (Q_g) of SI4894BDY-T1-E3 at 10-V V_GS?

The SI4894BDY-T1-E3 has a total gate charge (Q_g) of 25.4 nC (typical) and up to 38 nC (max) at V_GS = 10 V, V_DS = 15 V, and I_D = 12 A. This value directly impacts gate driver sizing and switching loss; for example, driving Q_g = 25.4 nC with a 1-Ω gate resistor yields ~25-V/ns dV/dt. The SI4894BDY-T1-E3 datasheet confirms this in the "Dynamic" section under "Total Gate Charge".

How does the thermal performance of SI4894BDY-T1-E3 compare between junction-to-ambient and junction-to-foot?

The SI4894BDY-T1-E3 has R_thJA = 73 °C/W (typical) and R_thJF = 19 °C/W (typical) in steady-state conditions. Junction-to-foot thermal resistance is significantly lower because the SO-8 drain leads and exposed pad conduct heat directly to PCB copper, bypassing the less efficient air-path convection of junction-to-ambient. This makes PCB layout with thermal vias under the drain pad critical to achieving the SI4894BDY-T1-E3's full current capability.

SI4894BDY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1580 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4894BDY-T1-E3 FAQ

1.How can I place an order for SI4894BDY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4894BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4894BDY-T1-E3 reliable?

The price and inventory of SI4894BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4894BDY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4894BDY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4894BDY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4894BDY-T1-E3?

SI4894BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4894BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4894BDY-T1-E3?

For technical support, including SI4894BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4894BDY-T1-E3 requirements.

6.How does Aetrix verify that SI4894BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4894BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4894BDY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4894BDY-T1-E3?

All SI4894BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4894BDY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4894BDY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4894BDY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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