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Vishay Siliconix SI4894BDY-T1-GE3
- Part No.:
- SI4894BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4894BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 8.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
SI4894BDY-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 12 A continuous drain current at 25 °C, and 0.011 Ω RDS(on) at VGS = 10 V. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the SI4894BDY-T1-GE3 datasheet, SI4894BDY-T1-GE3 pinout, SI4894BDY-T1-GE3 application, or SI4894BDY-T1-GE3 equivalent, key selection criteria include its SO-8 package thermal resistance (RthJA = 73 °C/W steady-state), gate charge (Qg = 25.4 nC at 10 V), and guaranteed 100 % Rg testing for consistent switching timing.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching characteristics. Its gate threshold voltage (1.0–3.0 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, and its integrated body diode supports bidirectional current flow in buck converter freewheeling paths.
The device is characterized for operation from –55 °C to +150 °C junction temperature, with avalanche energy rating of 20 mJ and pulsed drain current capability up to 40 A. Thermal performance is defined for surface-mounting on 1" × 1" FR4 board, with RthJF = 19 °C/W (typ.) from junction to drain foot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) | 0.011 Ω at VGS = 10 V, ID = 12 A - Enables <132 mW conduction loss at full rated current |
| ID (continuous) | 12 A at TA = 25 °C - Supports compact 12 V/10 W power stages without forced air cooling |
| Qg | 25.4 nC at VGS = 10 V - Determines gate driver power requirement and switching speed in PWM circuits |
| RthJA | 73 °C/W (steady-state) - Defines maximum power dissipation before thermal shutdown on standard PCB layout |
| VGS(th) | 1.0–3.0 V - Ensures compatibility with 3.3 V microcontroller GPIOs without level-shifting |
| Ciss | 1580 pF - Impacts EMI filtering design and gate drive loop stability in high-frequency SMPS |
Pinout & Package
SI4894BDY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement. Dimensions conform to JEDEC MS-012: D = 4.80–5.00 mm, E = 3.80–4.00 mm, H = 5.80–6.20 mm, and e = 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected to exposed thermal pad; primary current path and heat sink interface |
| 6 | Gate (G) | Control terminal requiring low-impedance drive to minimize switching losses and ringing |
| Source (S) | Source (S) | Reference node for gate drive and current sensing; tied to power ground in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lower RDS(on) per die area than planar MOSFETs, enabling smaller footprint for same current rating |
| 100 % Rg tested | Ensures gate resistance variation ≤ ±30 %, critical for matched parallel operation and predictable turn-on delay |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS, supporting environmentally regulated industrial and automotive end equipment |
| SO-8 with exposed drain | Provides dual thermal paths: PCB copper pour via drain pins and direct conduction through exposed pad |
| Low Qgd/Qg ratio | 4.3/25.4 ≈ 0.17 - Reduces Miller-induced shoot-through risk in bridge-leg configurations |
Applications
| DC-DC Synchronous Rectifier | Motor Drive Half-Bridge |
|---|---|
Use Scenario: Secondary-side rectification in isolated 12 V input, 3.3 V/5 A buck-derived converter. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 75 % load. Use Value: Achieves >92 % efficiency at full load due to 0.011 Ω RDS(on), cutting rectifier losses by 65 % versus 40 V/5 A Schottky. | Use Scenario: Upper and lower switches in 24 V brushed DC motor driver with PWM frequency of 20 kHz. IC Role / Device Role / Timing Role: N-channel power switch in half-bridge topology, driven by gate driver with bootstrap supply. Use Value: Enables 12 A peak motor current with <150 mW conduction loss per switch at 25 °C ambient. |
| Hot-Swap Power Controller | USB-C Power Delivery Switch |
Use Scenario: Inrush current limiting and fault isolation in 12 V backplane power distribution unit. IC Role / Device Role / Timing Role: High-side load switch controlled by dedicated hot-swap controller IC. Use Value: Withstands 40 A pulsed current during capacitive charging and limits fault current via current-sense feedback. | Use Scenario: VBUS path switch in USB-C receptacle supporting 20 V/5 A PD3.0 power delivery. IC Role / Device Role / Timing Role: Bidirectional power switch managing source/sink direction under PD contract negotiation. Use Value: Body diode forward voltage of 0.76 V (typ.) ensures low-loss reverse conduction during sink mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.012 Ω @ 10 V, SO-8, but higher Qg = 32 nC and no halogen-free certification | Less suitable for thermally constrained USB-C PD designs requiring low gate drive power | Prefer SI4894BDY-T1-GE3 where halogen-free compliance and lower Qg are required |
| DMN3028LSD-13 | RDS(on) = 0.013 Ω @ 10 V, same SO-8, but only rated to 20 A pulsed and lacks 100 % Rg test | Not recommended for paralleled operation or high-reliability motor control where gate resistance matching matters | Select SI4894BDY-T1-GE3 when guaranteed Rg testing and 40 A avalanche-rated robustness are needed |
Compared with IRF7470PBF and DMN3028LSD-13, SI4894BDY-T1-GE3 offers superior thermal performance (RthJA = 73 °C/W vs. ≥80 °C/W), tighter gate resistance control, and halogen-free compliance-making it optimal for space-constrained, high-efficiency, and regulated-end-equipment designs.
Availability
SI4894BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, hot-swap controllers, and USB-C power delivery systems requiring stable component supply and long-term manufacturability.
Supply support for SI4894BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and resistive components with emphasis on reliability and performance.
The Si4894BDY product line delivers high-current, low-RDS(on) N-channel MOSFETs optimized for high-efficiency power conversion in computing, industrial, and consumer applications.
FAQ
What is the maximum continuous drain current rating for SI4894BDY-T1-GE3 at 70 °C ambient temperature?
The SI4894BDY-T1-GE3 supports 9.5 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package on standard FR4 PCBs and must be verified against actual board layout and airflow conditions in the final SI4894BDY-T1-GE3 application.
Does SI4894BDY-T1-GE3 have an integrated body diode, and what is its forward voltage?
Yes, SI4894BDY-T1-GE3 includes a monolithic body diode with typical forward voltage of 0.76 V at IS = 2.3 A and TJ = 25 °C. This diode enables freewheeling current in inductive loads and reverse conduction in bidirectional power paths, as confirmed in the "Diode Forward Voltage" specification section of the SI4894BDY-T1-GE3 datasheet.
Is SI4894BDY-T1-GE3 suitable for use with 3.3 V logic-level gate drivers?
Yes, SI4894BDY-T1-GE3 has a gate threshold voltage range of 1.0–3.0 V, allowing full enhancement with 3.3 V gate drive. At VGS = 4.5 V, it delivers 9.8 A with RDS(on) = 0.016 Ω-making SI4894BDY-T1-GE3 appropriate for microcontroller-driven low-voltage switching applications without external level shifters.
What is the avalanche energy rating of SI4894BDY-T1-GE3, and under what conditions is it specified?
The SI4894BDY-T1-GE3 is rated for 20 mJ single-pulse avalanche energy with L = 0.1 mH, as measured under standardized test conditions. This rating applies to transient overvoltage events such as inductive switching spikes and confirms ruggedness beyond normal clamping requirements in the SI4894BDY-T1-GE3's intended power-switching applications.
How does the 100 % Rg test impact system-level design of SI4894BDY-T1-GE3?
The 100 % Rg test ensures each SI4894BDY-T1-GE3 unit has gate resistance between 0.9 Ω and 2.7 Ω, minimizing variation in turn-on/turn-off timing across devices. This improves predictability in paralleled configurations and reduces timing skew in multi-phase converters-critical for maintaining balanced current sharing and avoiding thermal runaway in high-current SI4894BDY-T1-GE3 implementations.
SI4894BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1580 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4894BDY-T1-GE3 FAQ
1.How can I place an order for SI4894BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4894BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4894BDY-T1-GE3 reliable?
The price and inventory of SI4894BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4894BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4894BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4894BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4894BDY-T1-GE3?
SI4894BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4894BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4894BDY-T1-GE3?
For technical support, including SI4894BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4894BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4894BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4894BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4894BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4894BDY-T1-GE3?
All SI4894BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4894BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4894BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4894BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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