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Vishay Siliconix SI4896DY-T1-GE3
- Part No.:
- SI4896DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4896DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 80V 6.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,852
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Product details
Overview
SI4896DY-T1-GE3 from Vishay Siliconix is an N-channel 80-V TrenchFET® power MOSFET in SO-8 package, delivering RDS(on) = 0.0165 Ω at VGS = 10 V and 10 A, with continuous drain current up to 9.5 A at TA = 25 °C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drivers.
For engineers reviewing the SI4896DY-T1-GE3 datasheet, SI4896DY-T1-GE3 pinout, SI4896DY-T1-GE3 application, or SI4896DY-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant construction, low gate charge (Qg = 34–41 nC), and thermal resistance RthJA = 65 °C/W for surface-mount thermal management on FR4 boards.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in medium-voltage DC power stages. Its gate threshold voltage (VGS(th) = 2.0 V typ.) enables reliable turn-on with standard 3.3 V or 5 V logic-level gate drive.
The device integrates a body diode with VSD = 0.75–1.1 V at IS = 2.8 A and exhibits avalanche-rated capability (IAS = 40 A, L = 0.1 mH), supporting robust operation under inductive switching stress without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - supports input rails up to 48 V nominal systems with 2× safety margin |
| RDS(on) @ VGS = 10 V | 0.0165 Ω - enables <1.7 W conduction loss at 10 A, reducing heatsink requirements |
| ID Continuous @ TA = 25 °C | 9.5 A - suitable for 12–24 V buck converter outputs delivering up to ~200 W |
| Qg Total Gate Charge | 34–41 nC - allows efficient 500 kHz–1 MHz switching with moderate gate driver strength |
| RthJA Steady State | 65 °C/W - requires ≤ 3.1 W dissipation for 150 °C junction limit on 1" × 1" FR4 board |
| VGS(th) | 2.0 V typ. - ensures full enhancement with 3.3 V microcontroller GPIO or dedicated gate drivers |
| Body Diode VSD | 0.75–1.1 V @ IS = 2.8 A - lowers reverse recovery losses in synchronous rectification |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package, 5.0 mm × 4.0 mm footprint, 1.75 mm max height, lead-free and halogen-free per IEC 61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source bias; low Ciss enables fast edge rates |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to power ground in low-side switch |
| 3 (D) | Drain | Main current output; connected to switched rail or inductor node; thermally coupled to exposed pad (Pin 4–8) |
| 4–8 (D) | Drain (parallel) | Four additional drain terminals sharing same internal connection; reduce current density and improve thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × area efficiency for SO-8, minimizing PCB space per watt |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for EU industrial and consumer end-equipment |
| Avalanche-rated (IAS = 40 A) | Withstands unclamped inductive energy without failure - eliminates need for external protection in motor drives |
| Low Qgd/Qgs ratio (11.0/7.5 nC) | Improves hard-switching EMI profile and reduces Miller-induced shoot-through risk in half-bridge topologies |
| Specified RDS(on) at VGS = 6 V | 0.022 Ω - guarantees performance with 5 V logic or automotive 5 V supply gate drivers |
Applications
| DC-DC Synchronous Rectifier | Industrial Motor Driver Half-Bridge |
|---|---|
|
Use Scenario: Secondary-side switch in isolated 12 V–24 V output flyback or forward converters. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Achieves >2 % efficiency gain over 40 V Schottky at 5 A output due to 0.0165 Ω RDS(on) and low VSD. |
Use Scenario: High-side or low-side switch in 24 V brushed DC motor H-bridge with PWM control. IC Role / Device Role / Timing Role: Power switching element handling bidirectional current up to 8.3 A continuous. Use Value: Avalanche rating supports safe commutation during motor back-EMF transients without snubber networks. |
| Hot-Swap Load Switch | Telecom DC Power Distribution |
|
Use Scenario: Inrush-limited power enable for hot-pluggable modules in 48 V intermediate bus systems. IC Role / Device Role / Timing Role: Controlled high-current pass element with gate slew-rate limiting. Use Value: 9.5 A continuous rating and 80 V VDS support 48 V telecom applications with headroom for line surges. |
Use Scenario: Primary-side OR-ing FET in redundant 48 V DC distribution with automatic fault isolation. IC Role / Device Role / Timing Role: Low-loss bidirectional blocking switch enabling seamless source switchover. Use Value: Low RDS(on) minimizes voltage drop across OR-ing path, preserving system efficiency and thermal budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.015 Ω @ 10 V but SO-8 package with higher Qg (52 nC); no halogen-free certification stated | Higher gate drive power needed; less suitable for high-frequency (>1 MHz) designs | Prefer SI4896DY-T1-GE3 where halogen-free compliance and lower Qg are critical |
| DMN6016LFG-7 | RDS(on) = 0.016 Ω @ 10 V, same SO-8, but rated only to 60 V VDS; Qg = 26 nC | Limited to ≤ 36 V systems; insufficient margin for 48 V surge conditions | Select SI4896DY-T1-GE3 for 48 V+ applications requiring 80 V rating and avalanche ruggedness |
Compared with IRF7470PBF and DMN6016LFG-7, SI4896DY-T1-GE3 uniquely combines 80 V rating, halogen-free compliance, and balanced Qg/RDS(on) for cost-sensitive industrial power stages needing reliability and regulatory alignment.
Availability
SI4896DY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and hot-swap load switches requiring stable component supply, long-term lifecycle assurance, and RoHS/halogen-free compliance.
Supply support for SI4896DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The Si4896DY product line delivers trench-based N-channel MOSFETs optimized for high-efficiency, medium-voltage power conversion in space-constrained surface-mount applications.
FAQ
What is the maximum continuous drain current for SI4896DY-T1-GE3 at 70 °C ambient temperature?
The SI4896DY-T1-GE3 supports 7.6 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board. This value is derived from the Absolute Maximum Ratings table and accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures. The SI4896DY-T1-GE3 maintains safe operation within its 150 °C junction limit under these conditions.
Does SI4896DY-T1-GE3 support logic-level gate drive?
Yes, the SI4896DY-T1-GE3 has a gate threshold voltage VGS(th) of 2.0 V (typical), and its RDS(on) is specified down to VGS = 6.0 V (0.022 Ω). This confirms full enhancement with standard 3.3 V or 5 V logic outputs, making it compatible with microcontrollers and gate drivers without level-shifting. The SI4896DY-T1-GE3 performs reliably in such configurations.
Is SI4896DY-T1-GE3 suitable for avalanche energy handling?
Yes, the SI4896DY-T1-GE3 is fully rated for unclamped inductive switching with IAS = 40 A (L = 0.1 mH). This avalanche capability is production-tested and guaranteed, enabling robust use in motor drive and relay driving applications where inductive kickback occurs. The SI4896DY-T1-GE3 eliminates need for external clamping diodes in many cases.
What is the thermal resistance from junction to ambient for SI4896DY-T1-GE3?
The SI4896DY-T1-GE3 has a maximum steady-state junction-to-ambient thermal resistance RthJA of 80 °C/W, with a typical value of 65 °C/W when mounted on a 1" × 1" FR4 board. This value directly determines allowable power dissipation: at 25 °C ambient, the SI4896DY-T1-GE3 can dissipate up to 1.56 W continuously before reaching its 150 °C junction limit.
How does the halogen-free status of SI4896DY-T1-GE3 impact compliance?
The SI4896DY-T1-GE3 meets IEC 61249-2-21 for halogen-free printed wiring board materials and is RoHS-compliant per Directive 2002/95/EC. This ensures full environmental compliance for export to EU, China, and other regulated markets. The "-GE3" suffix explicitly denotes this dual certification, distinguishing it from the lead-free-only "-E3" variant. SI4896DY-T1-GE3 satisfies strict green electronics requirements.
SI4896DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 16.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4896DY-T1-GE3 FAQ
1.How can I place an order for SI4896DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4896DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4896DY-T1-GE3 reliable?
The price and inventory of SI4896DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4896DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4896DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4896DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4896DY-T1-GE3?
SI4896DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4896DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4896DY-T1-GE3?
For technical support, including SI4896DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4896DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4896DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4896DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4896DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4896DY-T1-GE3?
All SI4896DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4896DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4896DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4896DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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