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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Vishay Siliconix SI4922BDY-T1-E3

Name: SI4922BDY-T1-E3
Brand: Vishay Siliconix
SKU: SI4922BDY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4922BDY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4922BDY-T1-E3.pdf

Description:: MOSFET 2N-CH 30V 8A 8SOIC

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Product details

Overview

SI4922BDY-T1-E3 from Vishay Siliconix is a dual N-channel 30-V TrenchFET® power MOSFET in SO-8 package, with R_DS(on) = 0.016 Ω at V_GS = 10 V, 8 A continuous drain current (T_C = 25 °C), and 100 % R_g and UIS tested - used in synchronous buck converters and motor drive half-bridges.

For engineers reviewing the SI4922BDY-T1-E3 datasheet, SI4922BDY-T1-E3 pinout, SI4922BDY-T1-E3 application, or SI4922BDY-T1-E3 equivalent, key selection criteria include dual-channel matching, low gate charge (19 nC at V_GS = 4.5 V), thermal resistance (R_thJA = 50 °C/W), body diode recovery (t_rr = 32 ns), and Pb-free RoHS compliance per Directive 2002/95/EC.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single SO-8 package, enabling high-efficiency synchronous rectification without external timing coordination. Its trench-based structure delivers low R_DS(on) across V_GS = 2.5–10 V, supporting both 3.3 V and 5 V gate drive logic.

The device features fully characterized dynamic parameters including Q_g = 19 nC (V_GS = 4.5 V), C_iss = 2070 pF, and t_r/t_f = 53/81 ns (V_GEN = 4.5 V), optimized for fast-switching DC-DC converters operating up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V rail applications with margin
R_DS(on) @ V_GS = 4.5 V	0.018 Ω - Enables <1 W conduction loss at 8 A in compact layouts
I_D (continuous)	8 A @ T_C = 25 °C - Package-limited current rating for SO-8 thermal footprint
Q_g	19 nC @ V_GS = 4.5 V - Low gate drive energy supports efficient 3.3 V controller interfacing
t_rr	32 ns - Fast body diode recovery reduces shoot-through risk in synchronous topologies
R_thJA	50 °C/W - Thermal performance enables 2 W dissipation on standard FR4 without heatsink
V_GS(th)	0.6–1.8 V - Ensures turn-on with 2.5 V logic while avoiding false triggering

Pinout & Package

SO-8 narrow-body package (JEDEC MS-012), 5.0 mm × 4.0 mm × 1.75 mm, surface-mount, Pb-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source 1 / Drain 1 / Gate 1 / Source 1	Left-side channel: S1–D1–G1–S1 - forms first N-MOSFET with internal source tie
5, 6, 7, 8	Drain 2 / Gate 2 / Source 2 / Source 2	Right-side channel: D2–G2–S2–S2 - second N-MOSFET with shared source pad (pins 4 & 5 tied internally to drains)

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.016 Ω R_DS(on) at 10 V in SO-8 - 30 % lower than planar equivalents at same die size
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling (E_AS = 11.2 mJ) for industrial transients
Matched dual-channel pairing	Ensures balanced switching timing and current sharing in half-bridge configurations
Halogen-free per IEC 61249-2-21	Meets strict environmental compliance for automotive and medical end-equipment

Applications

DC-DC Synchronous Buck Converter	Brushless DC Motor Half-Bridge
Use Scenario: High-efficiency 12 V input to 3.3 V/5 V output conversion in telecom power modules. IC Role / Device Role / Timing Role: Upper and lower switches in synchronous rectification stage - SI4922BDY-T1-E3 replaces discrete MOSFET pairs with matched timing and R_DS(on). Use Value: Reduces conduction loss by 22 % vs. single-channel alternatives due to 0.018 Ω @ 4.5 V and integrated layout symmetry.	Use Scenario: 24 V BLDC driver for HVAC blowers requiring compact, thermally stable phase-leg switching. IC Role / Device Role / Timing Role: Dual N-channel half-bridge leg - SI4922BDY-T1-E3 provides matched gate drive thresholds and t_rr = 32 ns for clean commutation. Use Value: Eliminates external bootstrap diodes and reduces PCB area by 40 % versus discrete solutions.
USB-C Power Delivery Sink	Industrial PLC Output Stage
Use Scenario: 20 V/5 A USB PD sink path with reverse-current protection and low forward drop. IC Role / Device Role / Timing Role: Dual-channel load switch - SI4922BDY-T1-E3 uses internal source ties to support bidirectional current sensing and fast fault shutdown. Use Value: Achieves <0.1 V dropout at 5 A using 0.018 Ω R_DS(on), meeting USB PD 3.1 voltage regulation spec.	Use Scenario: 24 V digital output module driving solenoids and relays with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: Protected high-side switch - SI4922BDY-T1-E3 leverages body diode reverse recovery (t_rr = 32 ns) to clamp inductive kickback without snubbers. Use Value: Supports 35 A pulsed current (I_DM) and 15 A avalanche current (I_AS) for robust field reliability.

DC-DC Synchronous Buck Converter

Brushless DC Motor Half-Bridge

Use Scenario: High-efficiency 12 V input to 3.3 V/5 V output conversion in telecom power modules.

IC Role / Device Role / Timing Role: Upper and lower switches in synchronous rectification stage - SI4922BDY-T1-E3 replaces discrete MOSFET pairs with matched timing and R_DS(on).

Use Value: Reduces conduction loss by 22 % vs. single-channel alternatives due to 0.018 Ω @ 4.5 V and integrated layout symmetry.

Use Scenario: 24 V BLDC driver for HVAC blowers requiring compact, thermally stable phase-leg switching.

IC Role / Device Role / Timing Role: Dual N-channel half-bridge leg - SI4922BDY-T1-E3 provides matched gate drive thresholds and t_rr = 32 ns for clean commutation.

Use Value: Eliminates external bootstrap diodes and reduces PCB area by 40 % versus discrete solutions.

USB-C Power Delivery Sink

Industrial PLC Output Stage

Use Scenario: 20 V/5 A USB PD sink path with reverse-current protection and low forward drop.

IC Role / Device Role / Timing Role: Dual-channel load switch - SI4922BDY-T1-E3 uses internal source ties to support bidirectional current sensing and fast fault shutdown.

Use Value: Achieves <0.1 V dropout at 5 A using 0.018 Ω R_DS(on), meeting USB PD 3.1 voltage regulation spec.

Use Scenario: 24 V digital output module driving solenoids and relays with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Protected high-side switch - SI4922BDY-T1-E3 leverages body diode reverse recovery (t_rr = 32 ns) to clamp inductive kickback without snubbers.

Use Value: Supports 35 A pulsed current (I_DM) and 15 A avalanche current (I_AS) for robust field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7341TRPBF	R_DS(on) = 0.042 Ω @ 4.5 V; higher Q_g = 25 nC; SO-8 but non-matched channels	Limited to lower-frequency (<500 kHz) converters due to slower switching and mismatched timing	Choose when cost sensitivity outweighs efficiency and layout simplicity
NTMFS4C09NT1G	R_DS(on) = 0.0095 Ω @ 4.5 V; PowerPAK SO-8 package; no internal source tie between channels	Requires external source routing; better for high-current (>10 A) but less compact designs	Choose when ultra-low R_DS(on) is critical and board space allows separate source traces

Compared with IRF7341TRPBF and NTMFS4C09NT1G, SI4922BDY-T1-E3 uniquely combines matched dual-channel timing, integrated source tie, and 0.018 Ω R_DS(on) at 4.5 V in standard SO-8 - optimizing for space-constrained, high-frequency synchronous buck and motor control.

Availability

SI4922BDY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and industrial PLC output stages requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for SI4922BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The Si4922BDY product line delivers dual-channel TrenchFET® MOSFETs optimized for synchronous rectification, motor control, and load switching in space-constrained industrial and computing power systems.

FAQ

What is the maximum continuous drain current rating for SI4922BDY-T1-E3 at 70 °C case temperature?

The SI4922BDY-T1-E3 has a continuous drain current rating of 8 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value is package-limited and applies under steady-state conditions with proper PCB copper area per Vishay's recommended SO-8 pad layout (Document 72606).

Does SI4922BDY-T1-E3 support 3.3 V gate drive in practical applications?

Yes, SI4922BDY-T1-E3 supports reliable 3.3 V gate drive: its V_GS(th) range is 0.6–1.8 V, and R_DS(on) is specified at 0.018 Ω @ V_GS = 4.5 V and 0.024 Ω @ V_GS = 2.5 V. At 3.3 V, typical R_DS(on) falls between those values, enabling functional operation in 3.3 V logic-controlled circuits.

How is the internal connection between the two N-channel MOSFETs configured in SI4922BDY-T1-E3?

The SI4922BDY-T1-E3 integrates two independent N-channel MOSFETs in one SO-8 package with no internal gate or drain connection. Pin 4 (S1) and Pin 5 (D2) are electrically isolated; however, the datasheet diagram shows S1 tied to S2 via shared source pads (pins 4 and 8), while D1 connects to pin 3 and D2 to pin 5 - enabling half-bridge or dual-switch configurations with external routing.

What is the avalanche energy rating for SI4922BDY-T1-E3, and how is it validated?

The SI4922BDY-T1-E3 is rated for 11.2 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, tested per JEDEC JESD24-1. This rating is guaranteed by 100 % UIS (Unclamped Inductive Switching) testing during production, ensuring robustness against inductive switching transients in motor and relay drive applications.

Is SI4922BDY-T1-E3 suitable for use in automotive applications?

SI4922BDY-T1-E3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. It meets industrial temperature range (–50 to +150 °C) and Pb-free/RoHS requirements, making it suitable for under-hood non-safety applications only when validated per customer-specific stress testing and derating guidelines.

SI4922BDY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 8A

Rds On (Max) @ Id, Vgs:: 16mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 2070pF @ 15V

Power - Max:: 3.1W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4922BDY-T1-E3 FAQ

1.How can I place an order for SI4922BDY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4922BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4922BDY-T1-E3 reliable?

The price and inventory of SI4922BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4922BDY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4922BDY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4922BDY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4922BDY-T1-E3?

SI4922BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4922BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4922BDY-T1-E3?

For technical support, including SI4922BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4922BDY-T1-E3 requirements.

6.How does Aetrix verify that SI4922BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4922BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4922BDY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4922BDY-T1-E3?

All SI4922BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4922BDY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4922BDY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4922BDY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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