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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5402BDC-T1-E3

Name: SI5402BDC-T1-E3
Brand: Vishay Siliconix
SKU: SI5402BDC-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5402BDC-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5402BDC-T1-E3.pdf

Description:: MOSFET N-CH 30V 4.9A 1206-8

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Product details

Overview

SI5402BDC-T1-E3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in a 1206-8 ChipFET® package, delivering R_DS(on) = 0.035 Ω at V_GS = 10 V and 6.7 A continuous drain current at T_A = 25 °C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and battery protection circuits.

For engineers reviewing the SI5402BDC-T1-E3 datasheet, SI5402BDC-T1-E3 pinout, SI5402BDC-T1-E3 application, or SI5402BDC-T1-E3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, thermal resistance R_thJA = 80 °C/W (steady state), halogen-free construction per IEC 61249-2-21, and leadless ChipFET® footprint compatibility with automated reflow assembly.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in compact surface-mount applications. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, enabling reliable turn-on with standard logic-level drivers.

The device integrates an intrinsic body diode with forward voltage V_SD = 0.8–1.2 V at I_S = 1.1 A and exhibits Q_g = 10–20 nC, supporting efficient PWM operation in high-frequency power stages up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V and 24 V system-side switching
R_DS(on) @ V_GS = 10 V	0.035 Ω - Enables ≤ 1.2 W conduction loss at 6 A continuous current
R_DS(on) @ V_GS = 4.5 V	0.042 Ω - Supports direct drive from 3.3 V/5 V microcontrollers without level shifting
I_D (continuous, T_A = 25 °C)	6.7 A - Sustains typical load currents in portable power management and USB PD sink circuits
R_thJA (steady state)	80 °C/W - Requires minimal PCB copper area (1" × 1" FR4) for thermal compliance
Q_g	10–20 nC - Limits gate drive power and enables <15 ns rise/fall times with 6 Ω source impedance
V_GS(th)	1.0–3.0 V - Ensures robust turn-on margin across temperature and process variation

Pinout & Package

Package: 1206-8 ChipFET® - leadless, bottom-terminal surface-mount package with exposed drain pad for thermal and electrical performance. Dimensions: 3.2 mm × 1.6 mm × 0.85 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path (source to drain in forward conduction)	Eight parallel drain terminals connect to internal die; all tied to exposed bottom thermal pad for low-inductance, high-current routing
Gate (G)	Control electrode for channel formation	Single top-side terminal; requires <20 nC charge for full enhancement; sensitive to ESD (±20 V max rating)
Source (S)	Reference node for gate drive and current return path	Single top-side terminal; forms cathode of integrated body diode; must be routed with low inductance in synchronous rectifier layouts

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 15% lower R_DS(on) vs. planar MOSFETs at same die size, improving power density in space-constrained designs
Halogen-free construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants without compromising moisture resistance or solderability
ChipFET® package	Leadless design reduces parasitic inductance by >30% vs. SO-8, enabling cleaner switching waveforms in high-dI/dt applications
Low Q_gd/Q_g ratio	Q_gd = 1.6 nC / Q_g ≈ 10% - minimizes Miller plateau duration and improves hard-switching robustness
Body diode reverse recovery	t_rr = 20–60 ns - supports discontinuous conduction mode (DCM) operation in buck converters without external Schottky clamp

Applications

Battery Protection Circuit	USB-C Power Delivery Sink
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs using integrated protection ICs. IC Role / Device Role / Timing Role: Low-side current-sense switch controlling discharge path; operates in linear and saturated modes during fault response. Use Value: R_DS(on) = 0.042 Ω at 4.5 V ensures <120 mW dissipation at 5 A fault current, minimizing thermal stress during sustained overloads.	Use Scenario: Load switch for VBUS path control in USB-C receptacles supporting up to 3 A at 5 V. IC Role / Device Role / Timing Role: High-side or low-side power gate enabling/disabling downstream power rails under firmware control. Use Value: Fast 10–15 ns turn-on delay and 10–15 ns rise time support dynamic power-state transitions compliant with USB PD 3.1 timing requirements.
DC-DC Synchronous Rectifier	Industrial Sensor Node Power Switch
Use Scenario: Secondary-side rectification in isolated 5 V/3.3 V flyback converters for industrial IoT gateways. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled or controller-generated gate signal. Use Value: Body diode V_SD = 0.8–1.2 V and t_rr = 20–60 ns reduce reverse recovery loss, improving efficiency by ≥2.5% over 40 V Schottky alternatives.	Use Scenario: Power gating for ultra-low-power sensors (e.g., temperature, humidity) in battery-operated edge nodes. IC Role / Device Role / Timing Role: Always-on, low-quiescent-load switch isolating sensor supply during sleep cycles. Use Value: I_DSS ≤ 1 µA at 30 V and V_GS(th) ≥ 1.0 V ensure <100 nA leakage in off-state, extending 10-year battery life targets.

Battery Protection Circuit

USB-C Power Delivery Sink

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs using integrated protection ICs.

IC Role / Device Role / Timing Role: Low-side current-sense switch controlling discharge path; operates in linear and saturated modes during fault response.

Use Value: R_DS(on) = 0.042 Ω at 4.5 V ensures <120 mW dissipation at 5 A fault current, minimizing thermal stress during sustained overloads.

Use Scenario: Load switch for VBUS path control in USB-C receptacles supporting up to 3 A at 5 V.

IC Role / Device Role / Timing Role: High-side or low-side power gate enabling/disabling downstream power rails under firmware control.

Use Value: Fast 10–15 ns turn-on delay and 10–15 ns rise time support dynamic power-state transitions compliant with USB PD 3.1 timing requirements.

DC-DC Synchronous Rectifier

Industrial Sensor Node Power Switch

Use Scenario: Secondary-side rectification in isolated 5 V/3.3 V flyback converters for industrial IoT gateways.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled or controller-generated gate signal.

Use Value: Body diode V_SD = 0.8–1.2 V and t_rr = 20–60 ns reduce reverse recovery loss, improving efficiency by ≥2.5% over 40 V Schottky alternatives.

Use Scenario: Power gating for ultra-low-power sensors (e.g., temperature, humidity) in battery-operated edge nodes.

IC Role / Device Role / Timing Role: Always-on, low-quiescent-load switch isolating sensor supply during sleep cycles.

Use Value: I_DSS ≤ 1 µA at 30 V and V_GS(th) ≥ 1.0 V ensure <100 nA leakage in off-state, extending 10-year battery life targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.022 Ω @ 10 V (lower), but 40 V V_DS; larger 2 mm × 2 mm PowerPAK® 1212-8 package	Better for 24 V systems requiring higher voltage margin; less suitable for space-constrained 1206 footprints	Select when V_DS derating >20% is required and board area allows larger package
DMN3025LFG-7	R_DS(on) = 0.028 Ω @ 10 V; same 30 V rating; 2 mm × 2 mm TSOP-6 package with gull-wing leads	Requires reflow-compatible leaded assembly; higher R_thJA = 100 °C/W limits power handling on minimal copper	Prefer when legacy leaded assembly infrastructure exists and thermal budget permits

Compared with SI5402BDC-T1-E3, Si7157DP-T1-GE3 offers lower on-resistance but demands more PCB area and higher voltage overhead, while DMN3025LFG-7 provides tighter R_DS(on) tolerance and leaded serviceability at the cost of thermal performance and modern leadless compatibility.

Availability

SI5402BDC-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery sinks, and DC-DC synchronous rectifiers requiring stable component supply, RoHS-compliant sourcing, and halogen-free manufacturing compliance.

Supply support for SI5402BDC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si5402BDC belongs to Vishay's ChipFET® TrenchFET® family, engineered for high-current, low-voltage switching in space-constrained portable and industrial power systems where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SI5402BDC-T1-E3 at 85 °C ambient temperature?

The SI5402BDC-T1-E3 supports 4.8 A continuous drain current at T_A = 85 °C under steady-state conditions on a 1" × 1" FR4 board. This rating reflects thermal derating due to increased junction-to-ambient resistance at elevated ambient temperatures and must be validated against actual PCB layout and airflow conditions in the final design.

Does SI5402BDC-T1-E3 have a specified avalanche energy rating?

No, the SI5402BDC-T1-E3 datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS). The device is rated for pulsed drain current I_DM = 20 A (5 µs pulse width), but operation in avalanche mode is not characterized or guaranteed. Designers must avoid operation beyond V_DS = 30 V to prevent breakdown.

Can SI5402BDC-T1-E3 be used in a high-side switch configuration?

Yes, SI5402BDC-T1-E3 can be used as a high-side switch, but requires gate drive voltage exceeding the source potential-typically implemented with a charge pump or bootstrap circuit. Its V_GS rating of ±20 V and V_GS(th) of 1.0–3.0 V support such configurations, though layout must minimize gate loop inductance to avoid oscillation during switching.

What is the thermal resistance from junction to foot (R_thJF) for SI5402BDC-T1-E3?

The SI5402BDC-T1-E3 has a maximum junction-to-foot thermal resistance (R_thJF) of 22 °C/W under steady-state conditions. This parameter quantifies heat transfer from the silicon die directly to the exposed drain pad, making it critical for designs using thermal vias or metal-core PCBs to enhance heatsinking through the bottom side.

Is SI5402BDC-T1-E3 compatible with lead-free reflow profiles?

Yes, SI5402BDC-T1-E3 is qualified for lead-free reflow with a peak temperature of 260 °C, per JEDEC J-STD-020. The "T1-E3" suffix explicitly denotes lead-free (Pb-free) termination and compliance with RoHS Directive 2011/65/EU. No special pre-conditioning or moisture sensitivity level (MSL) handling beyond MSL3 is required.

SI5402BDC-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5402BDC-T1-E3 FAQ

1.How can I place an order for SI5402BDC-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5402BDC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5402BDC-T1-E3 reliable?

The price and inventory of SI5402BDC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5402BDC-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5402BDC-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5402BDC-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5402BDC-T1-E3?

SI5402BDC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5402BDC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5402BDC-T1-E3?

For technical support, including SI5402BDC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5402BDC-T1-E3 requirements.

6.How does Aetrix verify that SI5402BDC-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5402BDC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5402BDC-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5402BDC-T1-E3?

All SI5402BDC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5402BDC-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5402BDC-T1-E3 part is unused and in its original packaging.

Return procedure for SI5402BDC-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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