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Vishay Siliconix SI5402BDC-T1-GE3
- Part No.:
- SI5402BDC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
SI5402BDC-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 4.9A 1206-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,738
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Product details
Overview
SI5402BDC-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® Power MOSFET rated for 30 V drain-source voltage, with RDS(on) of 0.035 Ω at VGS = 10 V and 4.9 A continuous drain current at TA = 25 °C. It uses the 1206-8 ChipFET® package and is optimized for high-efficiency DC-DC conversion in space-constrained power management circuits.
For engineers reviewing the SI5402BDC-T1-GE3 datasheet, SI5402BDC-T1-GE3 pinout, SI5402BDC-T1-GE3 application, or SI5402BDC-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, thermal resistance to ambient (RthJA = 80 °C/W steady-state), and suitability for synchronous buck converter high-side or low-side switching in portable electronics and industrial power supplies.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve enhanced conduction efficiency and fast switching performance. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 3.0 V, enabling reliable turn-on with standard logic-level drivers, and it features an integrated body diode with VSD = 0.8–1.2 V at IS = 1.1 A.
The device operates across –55 °C to +150 °C junction temperature range and supports pulsed drain currents up to 20 A. Its dynamic characteristics include total gate charge Qg = 10–20 nC and turn-off delay time td(off) = 27–40 ns under defined test conditions, making it suitable for medium-frequency switching applications up to ~1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage compatible with 24 V rail systems and 12 V input DC-DC stages |
| RDS(on) @ VGS = 10 V | 0.035 Ω - enables ≤170 mW conduction loss at 4.9 A, critical for thermally constrained PCB layouts |
| RDS(on) @ VGS = 4.5 V | 0.042 Ω - ensures robust operation with 3.3 V or 5 V microcontroller GPIO drive without level-shifting |
| ID (continuous, TA = 25 °C) | 6.7 A - supports peak load handling in compact point-of-load converters |
| Qg | 10–20 nC - determines gate driver power requirement and switching loss trade-off at 500 kHz–1 MHz |
| RthJA (steady-state) | 80–95 °C/W - defines thermal derating curve on standard FR4; requires minimal copper area for 4.9 A continuous use |
| VGS(th) | 1.0–3.0 V - guarantees turn-on with logic-level signals while avoiding spurious activation near ground noise |
Pinout & Package
The SI5402BDC-T1-GE3 is housed in the surface-mount 1206-8 ChipFET® package - a leadless, bottom-terminal design where all three terminals (Drain, Gate, Source) are exposed on the underside. The package footprint measures 3.2 mm × 1.6 mm with 0.65 mm pitch between drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current-carrying terminal connected to high-side switch node or output rail | Eight parallel drain pads provide low-inductance, high-current path and serve as thermal conduction path to PCB ground plane |
| G (Gate) | Control input for channel modulation | Single center pad; requires controlled impedance routing and local decoupling to suppress ringing during fast edge transitions |
| S (Source) | Reference node for gate drive and current return path | Two adjacent source pads anchor the body diode cathode and establish low-impedance return for synchronous rectification current |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers lower RDS(on) per die area than planar MOSFETs, enabling higher current density in ChipFET® footprint |
| Halogen-free construction | Meets IEC 61249-2-21 compliance for environmentally restricted end markets including EU medical and industrial equipment |
| Low Qgd/Qg ratio (0.16) | Reduces Miller-induced switching instability and improves hard-switching robustness in synchronous buck topologies |
| Integrated body diode with low VSD | Enables asynchronous operation or freewheeling in non-synchronous converters without external diode, saving board space |
| ChipFET® leadless package | Eliminates solder wicking concerns and provides superior thermal transfer to PCB versus SO-8 or TSOP-6 alternatives |
Applications
| Portable USB-C PD Adapters | Industrial PLC I/O Modules |
|---|---|
Use Scenario: High-efficiency 20–60 W AC/DC adapter with secondary-side synchronous rectification. IC Role / Device Role: Low-side synchronous rectifier MOSFET replacing Schottky diode in LLC or flyback output stage. Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency from 89% to ≥92% at 20 V/3 A output. | Use Scenario: 24 V DC-powered digital output driver with overcurrent protection and reverse polarity tolerance. IC Role / Device Role: Protected high-side switch controlling solenoid or relay coil loads. Use Value: Withstands 30 V transients and delivers 4.9 A continuous current while maintaining <100 mΩ on-resistance after thermal stabilization. |
| Automotive Body Control Units | Smart Home Hub Power Management |
Use Scenario: LED headlight dimming circuit requiring PWM-controlled current regulation at 12 V nominal supply. IC Role / Device Role: Low-side current sink switch modulating LED string current up to 5 A. Use Value: Fast 15 ns rise time and 15 ns fall time enable clean 1–2 kHz PWM without current overshoot or audible noise. | Use Scenario: Dual-rail power sequencer managing 3.3 V and 5 V rails for Wi-Fi/BLE SoCs and sensors. IC Role / Device Role: Load switch enabling/disabling downstream 5 V rail with controlled inrush current. Use Value: Gate threshold range allows direct control from 3.3 V MCU GPIO; RDS(on) limits voltage drop to <210 mV at 5 A load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.022 Ω @ 10 V, but larger 2 mm × 2 mm PowerPAK® 1212-8 package; higher Qg (25 nC) | Better conduction efficiency at high current, but requires more PCB area and higher gate drive energy | Prefer when thermal margin is tight and layout space permits larger footprint |
| DMN3028LSD-13 | RDS(on) = 0.028 Ω @ 10 V, dual-N in SO-8; no halogen-free marking; RthJA = 62 °C/W | Offers dual-device integration but lacks halogen-free certification and has inferior thermal resistance on same board area | Select only if dual-channel functionality is required and environmental compliance is not mandated |
Compared with Si7157DP-T1-GE3 and DMN3028LSD-13, the SI5402BDC-T1-GE3 provides optimal balance of low-profile ChipFET® packaging, halogen-free compliance, and gate-drive compatibility with 3.3 V logic-making it preferred for space- and regulatory-constrained single-channel switching in consumer and industrial power stages.
Availability
SI5402BDC-T1-GE3 is available at Aetrix Electronics and suitable for portable power adapters, industrial I/O modules, and automotive lighting control requiring stable component supply and RoHS/halogen-free compliance.
Supply support for SI5402BDC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si5402BDC belongs to Vishay's ChipFET®-optimized TrenchFET® family, engineered specifically for high-density, low-voltage DC-DC conversion where thermal performance and logic-level gate drive are critical.
FAQ
What is the maximum continuous drain current for SI5402BDC-T1-GE3 at 85 °C ambient temperature?
The SI5402BDC-T1-GE3 supports 3.5 A continuous drain current at TA = 85 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the 1206-8 ChipFET® package on standard FR4; actual usable current depends on PCB copper area and airflow. The SI5402BDC-T1-GE3 must be mounted per Vishay's recommended land pattern to achieve this rating.
Does SI5402BDC-T1-GE3 support 3.3 V logic-level gate drive?
Yes, the SI5402BDC-T1-GE3 has a gate threshold voltage range of 1.0 V to 3.0 V and delivers RDS(on) = 0.042 Ω at VGS = 4.5 V and ID = 4.4 A - confirming reliable enhancement-mode operation with 3.3 V microcontroller outputs. The SI5402BDC-T1-GE3 does not require external level-shifting circuitry in typical 3.3 V control applications.
What is the thermal resistance from junction to foot (RthJF) for SI5402BDC-T1-GE3?
The SI5402BDC-T1-GE3 has a typical junction-to-foot thermal resistance of 18 °C/W and maximum of 22 °C/W under steady-state conditions. This parameter quantifies heat transfer from the silicon die directly to the exposed drain pads on the package underside - critical for estimating temperature rise when the device is soldered to a large copper pour. The SI5402BDC-T1-GE3 leverages this low RthJF to maintain safe operating temperatures without heatsinks in most applications.
Is SI5402BDC-T1-GE3 suitable for synchronous rectification in DC-DC converters?
Yes, the SI5402BDC-T1-GE3 is widely used for synchronous rectification due to its low RDS(on), fast switching times (tr/tf = 10–15 ns), and integrated body diode with VSD = 0.8–1.2 V. Its gate charge profile supports efficient drive in 300 kHz–1 MHz buck converters. The SI5402BDC-T1-GE3 performs best when paired with a dedicated gate driver that minimizes dead-time losses.
What does the "-GE3" suffix indicate in SI5402BDC-T1-GE3?
Per Vishay's ordering nomenclature, the "-GE3" suffix denotes a lead-free and halogen-free version compliant with IEC 61249-2-21. It distinguishes the SI5402BDC-T1-GE3 from the "-E3" variant (lead-free only). Both share identical electrical specifications and ChipFET® packaging, but the SI5402BDC-T1-GE3 meets stricter environmental requirements for medical, automotive, and green-energy applications.
SI5402BDC-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 1206-8 ChipFET™
SI5402BDC-T1-GE3 FAQ
1.How can I place an order for SI5402BDC-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI5402BDC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI5402BDC-T1-GE3 reliable?
The price and inventory of SI5402BDC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5402BDC-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI5402BDC-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5402BDC-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI5402BDC-T1-GE3?
SI5402BDC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI5402BDC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI5402BDC-T1-GE3?
For technical support, including SI5402BDC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5402BDC-T1-GE3 requirements.
6.How does Aetrix verify that SI5402BDC-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI5402BDC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5402BDC-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI5402BDC-T1-GE3?
All SI5402BDC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5402BDC-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI5402BDC-T1-GE3 part is unused and in its original packaging.
Return procedure for SI5402BDC-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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