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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5403DC-T1-GE3

Name: SI5403DC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5403DC-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5403DC-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5403DC-T1-GE3.pdf

Description:: MOSFET P-CH 30V 6A 1206-8

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Product details

Overview

SI5403DC-T1-GE3 from Vishay Siliconix is a P-channel 30 V (D-S) TrenchFET® power MOSFET in a leadless 1206-8 ChipFET® package, delivering R_DS(on) = 0.030 Ω at V_GS = −10 V and 0.044 Ω at V_GS = −4.5 V, rated for −6 A continuous drain current at T_C = 25 °C, and optimized for DC/DC converter load switching and adaptor switch applications.

For engineers reviewing the SI5403DC-T1-GE3 datasheet, SI5403DC-T1-GE3 pinout, SI5403DC-T1-GE3 application, or SI5403DC-T1-GE3 equivalent, this page provides verified thermal resistance values (R_thJA = 40–50 °C/W), gate charge (Q_g = 15–42 nC), body diode characteristics (V_SD = −0.8 to −1.2 V), and validated 1206-8 ChipFET® footprint compatibility with TSOP-6 visual layout conventions.

Technical Context

This P-channel MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (V_GS(th) = −1 to −3 V) enables direct logic-level drive from 3.3 V or 5 V controllers without level shifting.

The device integrates an intrinsic body diode with reverse recovery time (t_rr = 22–33 ns) and charge (Q_rr = 15–25 nC), supporting synchronous rectification and freewheeling in buck converters. Thermal design is anchored by R_thJF = 15–20 °C/W (junction-to-foot) and R_thJA = 40–50 °C/W (junction-to-ambient, t ≤ 5 s).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Maximum blocking voltage for high-side switch configurations in 24 V systems.
R_DS(on) @ V_GS = −10 V	0.030 Ω - Enables <180 mW conduction loss at −6 A, critical for thermally constrained DC/DC modules.
R_DS(on) @ V_GS = −4.5 V	0.044 Ω - Supports direct interface with 4.5 V microcontroller GPIOs without gate driver.
Q_g	15–42 nC - Low total gate charge reduces drive power and enables >1 MHz switching in compact adapters.
I_D (continuous)	−6 A @ T_C = 25 °C - Sustains full-rated load current with minimal heatsinking on standard FR4 PCBs.
V_GS(th)	−1 to −3 V - Ensures reliable turn-on across temperature and process variation in industrial environments.
t_rr	22–33 ns - Minimizes body diode switching loss during dead-time in synchronous buck topologies.

Pinout & Package

SI5403DC-T1-GE3 is housed in a leadless 1206-8 ChipFET® package (3.05 mm × 1.90 mm × 1.05 mm), with exposed drain terminals on the bottom surface for enhanced thermal conduction. The package follows TSOP-6 visual layout conventions but adds two extra drain pins for improved power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6, 7, 8	Drain (D)	Six parallel drain terminals provide low-inductance, high-current paths and serve as primary thermal interface to PCB copper.
4	Gate (G)	Single gate input with R_g = 1.2–12 Ω - compatible with standard gate drivers and low-power MCU outputs.
5	Source (S)	Source terminal referenced to system ground; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 30 V rating with sub-30 mΩ R_DS(on), achieving higher power density than planar P-channel alternatives.
100 % R_g tested	Guarantees gate resistance between 1.2 Ω and 12 Ω - ensures predictable switching speed and EMI behavior.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912).
Exposed drain foot	Provides direct thermal path from die to PCB; R_thJF = 15 °C/W typical enables SO-8–level thermal performance in 80 % smaller footprint.
Body diode V_SD	−0.8 to −1.2 V at −5.8 A - lower forward drop than discrete Schottky solutions in cost-sensitive load switch designs.

Applications

DC/DC Converter Load Switch	Adapter Primary-Side Switch
Use Scenario: High-efficiency 12 V to 5 V buck converter in USB-C PD adapters, where the SI5403DC-T1-GE3 serves as the high-side synchronous rectifier switch. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active high-side switch, controlled by PWM signal synchronized to low-side FET. Use Value: 0.044 Ω R_DS(on) at −4.5 V gate drive eliminates need for external level shifter, reducing BOM count and board area.	Use Scenario: Input overvoltage protection and hot-swap control in wall-mounted AC/DC adapters, placed between rectifier output and bulk capacitor. IC Role / Device Role / Timing Role: Load switch enabling soft-start and fault isolation; driven by dedicated supervisor IC or microcontroller GPIO. Use Value: −30 V V_DS rating withstands 24 V transient surges; −6 A I_D supports up to 30 W adapter output with margin.
Industrial Sensor Power Gate	Automotive Body Control Module (BCM) Switch
Use Scenario: Power gating of 24 V sensor nodes (e.g., pressure transducers, RTDs) in programmable logic controllers (PLCs), cycling on/off per polling schedule. IC Role / Device Role / Timing Role: High-side power switch enabling precise current-controlled wake-up and sleep sequencing. Use Value: V_GS(th) = −1 to −3 V ensures clean turn-on at 3.3 V logic levels; low Q_g allows fast enable/disable transitions (<100 ns).	Use Scenario: 12 V load switching for interior lighting, mirror heaters, or seat controls in automotive BCMs operating across −40 to +125 °C ambient. IC Role / Device Role / Timing Role: P-channel high-side switch replacing mechanical relays, controlled via CAN/LIN-linked microcontroller. Use Value: R_thJA = 40–50 °C/W enables operation at full −6 A rating without heatsink in sealed enclosures; qualified per AEC-Q101.

DC/DC Converter Load Switch

Adapter Primary-Side Switch

Use Scenario: High-efficiency 12 V to 5 V buck converter in USB-C PD adapters, where the SI5403DC-T1-GE3 serves as the high-side synchronous rectifier switch.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as active high-side switch, controlled by PWM signal synchronized to low-side FET.

Use Value: 0.044 Ω R_DS(on) at −4.5 V gate drive eliminates need for external level shifter, reducing BOM count and board area.

Use Scenario: Input overvoltage protection and hot-swap control in wall-mounted AC/DC adapters, placed between rectifier output and bulk capacitor.

IC Role / Device Role / Timing Role: Load switch enabling soft-start and fault isolation; driven by dedicated supervisor IC or microcontroller GPIO.

Use Value: −30 V V_DS rating withstands 24 V transient surges; −6 A I_D supports up to 30 W adapter output with margin.

Industrial Sensor Power Gate

Automotive Body Control Module (BCM) Switch

Use Scenario: Power gating of 24 V sensor nodes (e.g., pressure transducers, RTDs) in programmable logic controllers (PLCs), cycling on/off per polling schedule.

IC Role / Device Role / Timing Role: High-side power switch enabling precise current-controlled wake-up and sleep sequencing.

Use Value: V_GS(th) = −1 to −3 V ensures clean turn-on at 3.3 V logic levels; low Q_g allows fast enable/disable transitions (<100 ns).

Use Scenario: 12 V load switching for interior lighting, mirror heaters, or seat controls in automotive BCMs operating across −40 to +125 °C ambient.

IC Role / Device Role / Timing Role: P-channel high-side switch replacing mechanical relays, controlled via CAN/LIN-linked microcontroller.

Use Value: R_thJA = 40–50 °C/W enables operation at full −6 A rating without heatsink in sealed enclosures; qualified per AEC-Q101.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si5401DC-T1-GE3	R_DS(on) = 0.022 Ω @ −10 V (lower), but V_DS = −20 V (reduced voltage margin)	Better efficiency in 12 V systems; unsuitable for 24 V bus transients or industrial 30 V rails	Select when V_DS derating to 16 V is acceptable and lowest conduction loss is prioritized.
DMN3026LFG-7	R_DS(on) = 0.026 Ω @ −10 V, same V_DS = −30 V, but 8-pin DFN (3 × 3 mm) - larger footprint, higher R_thJA = 60 °C/W	Higher thermal resistance requires more PCB copper or forced air cooling for same −6 A load	Choose if existing layout accommodates 3 × 3 mm DFN and gate drive supports 1.2 V V_GS(th) min.

Compared with Si5401DC-T1-GE3, SI5403DC-T1-GE3 trades 0.008 Ω higher R_DS(on) for 10 V higher V_DS rating - critical for surge immunity in industrial 24 V systems. Versus DMN3026LFG-7, SI5403DC-T1-GE3 achieves identical voltage rating in 40 % smaller footprint and 25 % lower junction-to-ambient thermal resistance.

Availability

SI5403DC-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converter load switching, adapter primary-side switching, and industrial sensor power gating requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SI5403DC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI5403DC-T1-GE3 belongs to Vishay's ChipFET® family - engineered to deliver SO-8–class thermal performance in miniature 1206-8 surface-mount packages for space-constrained power management applications.

FAQ

What is the maximum continuous drain current for SI5403DC-T1-GE3 at 85 °C case temperature?

The SI5403DC-T1-GE3 supports −5.8 A continuous drain current at T_C = 85 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be used with appropriate PCB copper area to maintain safe junction temperature.

Does SI5403DC-T1-GE3 require a gate driver for 3.3 V microcontroller operation?

No, SI5403DC-T1-GE3 does not require an external gate driver when driven by a 3.3 V microcontroller. Its gate threshold voltage range of −1 to −3 V ensures full enhancement at V_GS = −3.3 V, and its R_DS(on) = 0.044 Ω at −4.5 V confirms robust conduction even with marginal gate drive - verified in Vishay's S-81443 datasheet.

What is the thermal resistance from junction to ambient (R_thJA) for SI5403DC-T1-GE3 under standard test conditions?

The SI5403DC-T1-GE3 has a typical R_thJA of 40 °C/W and a maximum of 50 °C/W for t ≤ 5 s, measured on a 1" × 1" FR4 board with 2 oz copper. This value assumes the minimum recommended pad pattern per Vishay AN811 and is critical for calculating maximum allowable power dissipation in real-world layouts.

Is SI5403DC-T1-GE3 suitable for synchronous rectification in buck converters?

Yes, SI5403DC-T1-GE3 is suitable for synchronous rectification in buck converters. Its body diode exhibits t_rr = 22–33 ns and Q_rr = 15–25 nC, enabling efficient freewheeling with low reverse recovery loss. Combined with low R_DS(on) and fast switching times (t_d(off) = 30–56 ns), it reduces conduction and switching losses versus Schottky diodes.

What is the marking code for SI5403DC-T1-GE3, and how is it used for identification?

The marking code for SI5403DC-T1-GE3 is "BQ", laser-etched on the top surface of the 1206-8 ChipFET® package. This 2-character code uniquely identifies the device variant and is used during automated optical inspection (AOI) and manual verification to confirm correct placement and prevent substitution with non-equivalent P-channel MOSFETs.

SI5403DC-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 7.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1340 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 6.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5403DC-T1-GE3 FAQ

1.How can I place an order for SI5403DC-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5403DC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5403DC-T1-GE3 reliable?

The price and inventory of SI5403DC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5403DC-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5403DC-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5403DC-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5403DC-T1-GE3?

SI5403DC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5403DC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5403DC-T1-GE3?

For technical support, including SI5403DC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5403DC-T1-GE3 requirements.

6.How does Aetrix verify that SI5403DC-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5403DC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5403DC-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5403DC-T1-GE3?

All SI5403DC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5403DC-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5403DC-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5403DC-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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