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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5406DC-T1-E3

Name: SI5406DC-T1-E3
Brand: Vishay Siliconix
SKU: SI5406DC-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5406DC-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5406DC-T1-E3.pdf

Description:: MOSFET N-CH 12V 6.9A 1206-8

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Product details

Overview

SI5406DC-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 12 V drain-source voltage, 9.5 A continuous drain current at 25 °C, and 20 mΩ R_DS(on) at V_GS = 4.5 V. It serves as a low-voltage load/power switch in portable battery-operated systems such as smartphones and pagers.

For engineers reviewing the SI5406DC-T1-E3 datasheet, SI5406DC-T1-E3 pinout, SI5406DC-T1-E3 application, or SI5406DC-T1-E3 equivalent, key selection criteria include its 2.5-V gate threshold compatibility, ChipFET 1206-8 package thermal performance (R_thJA = 80 °C/W steady-state), and guaranteed 12-V V_DS rating with ±8-V gate-source voltage tolerance.

Technical Context

This device uses trench-gate silicon technology optimized for low R_DS(on) at logic-level gate drive (2.5 V–4.5 V), enabling efficient switching in space-constrained mobile power rails. Its integrated body diode supports synchronous rectification and reverse-current protection in DC-DC converters and load switches.

The ChipFET 1206-8 package features exposed-drain thermal pad for enhanced heat dissipation and is qualified for reflow soldering up to 260 °C peak temperature. Gate charge parameters (Q_g = 13.7 nC typ., Q_gd = 4.1 nC) support fast switching with minimal drive loss in high-frequency applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum blocking voltage for low-voltage battery rail switching
R_DS(on)	0.020 Ω at V_GS = 4.5 V - Enables <100 mW conduction loss at 7 A load current
I_D (continuous)	9.5 A at T_A = 25 °C - Supports high-current load switching on compact PCBs
V_GS(th)	0.6 V typ. - Ensures reliable turn-on with 2.5-V microcontroller GPIOs
Q_g	13.7 nC typ. - Allows sub-100 ns switching transitions with moderate gate driver strength
R_thJA	80 °C/W steady-state - Limits junction rise to ~64 °C above ambient at 0.8 W dissipation
V_GS rating	±8 V - Permits safe operation with transient overshoot in noisy mobile environments

Pinout & Package

The SI5406DC-T1-E3 is housed in a leadless ChipFET 1206-8 package with exposed drain pad on the bottom surface. The top-side marking includes "AC" prefix and lot/date code. Drain terminals are electrically connected to the exposed copper pad for thermal and electrical conduction.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control input; requires ≤±8 V drive; 0.6 V threshold enables direct MCU interface
S	Source	Power return node; referenced to system ground in low-side switch configuration
D (all 6 terminals)	Drain	Main power output path; all six top-side D pads and bottom exposed pad connect to same drain node

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 20 mΩ R_DS(on) at 4.5 V drive-enabling high-efficiency switching in 2.5–5 V systems
ChipFET 1206-8 package	0.8 mm profile with exposed drain pad-reduces thermal resistance to 15 °C/W junction-to-foot
Halogen-free construction	Complies with IEC 61249-2-21-meets RoHS and green manufacturing requirements
Low gate threshold	0.6 V typical V_GS(th)-ensures full enhancement with 2.5 V logic without level-shifting circuitry
Fast dynamic response	25 ns turn-off delay + 45 ns fall time-supports >1 MHz PWM in compact DC-DC stages

Applications

Smartphone Load Switching	Cellular PA Power Control
Use Scenario: Enabling/disabling power to camera modules, display backlight, or USB peripherals in LTE smartphones. IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3–4.2 V battery rail with fast enable/disable timing. Use Value: 20 mΩ R_DS(on) limits dropout to <85 mV at 4.2 A, preserving battery runtime and minimizing self-heating.	Use Scenario: Supplying controlled bias to RF power amplifier stages during transmit/receive state transitions. IC Role / Device Role / Timing Role: High-speed power gate isolating PA supply to prevent leakage and noise coupling during standby. Use Value: 25 ns t_d(off) and 45 ns t_f ensure clean, jitter-free PA enable timing synchronized to baseband control signals.
Battery-Powered Medical Sensors	Wearable Device Power Management
Use Scenario: Isolating sensor subsystems (ECG, SpO₂) from main battery during sleep mode to extend operational life. IC Role / Device Role / Timing Role: Ultra-low-leakage (1 µA I_DSS) power switch managing isolated domain wake-up sequencing. Use Value: Sub-µA off-state current prevents measurable battery drain over multi-week monitoring cycles.	Use Scenario: Managing power domains for Bluetooth LE radio, motion sensor, and display in fitness trackers. IC Role / Device Role / Timing Role: Compact-area load switch implementing dynamic power gating per functional block. Use Value: 1206-8 footprint (3.2 × 1.6 mm) fits tight wearable layouts while delivering 9.5 A capability for burst-mode operation.

Smartphone Load Switching

Cellular PA Power Control

Use Scenario: Enabling/disabling power to camera modules, display backlight, or USB peripherals in LTE smartphones.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3–4.2 V battery rail with fast enable/disable timing.

Use Value: 20 mΩ R_DS(on) limits dropout to <85 mV at 4.2 A, preserving battery runtime and minimizing self-heating.

Use Scenario: Supplying controlled bias to RF power amplifier stages during transmit/receive state transitions.

IC Role / Device Role / Timing Role: High-speed power gate isolating PA supply to prevent leakage and noise coupling during standby.

Use Value: 25 ns t_d(off) and 45 ns t_f ensure clean, jitter-free PA enable timing synchronized to baseband control signals.

Battery-Powered Medical Sensors

Wearable Device Power Management

Use Scenario: Isolating sensor subsystems (ECG, SpO₂) from main battery during sleep mode to extend operational life.

IC Role / Device Role / Timing Role: Ultra-low-leakage (1 µA I_DSS) power switch managing isolated domain wake-up sequencing.

Use Value: Sub-µA off-state current prevents measurable battery drain over multi-week monitoring cycles.

Use Scenario: Managing power domains for Bluetooth LE radio, motion sensor, and display in fitness trackers.

IC Role / Device Role / Timing Role: Compact-area load switch implementing dynamic power gating per functional block.

Use Value: 1206-8 footprint (3.2 × 1.6 mm) fits tight wearable layouts while delivering 9.5 A capability for burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si5404DC-T1-E3	Lower R_DS(on) (15 mΩ @ 4.5 V) but higher Q_g (18.5 nC); same 12 V rating and ChipFET package	Better conduction efficiency at high DC loads; slower switching due to higher gate charge	Select when minimizing steady-state loss outweighs switching speed requirements
DMN2053LSD-13	12 V rating, 22 mΩ R_DS(on) @ 4.5 V, SO-8 package (larger footprint, higher R_thJA = 62 °C/W)	Higher thermal resistance limits power density; SO-8 eases manual rework vs. ChipFET	Select when board-level repairability or legacy SO-8 layout reuse is prioritized over size/thermal performance

Compared with Si5404DC-T1-E3 and DMN2053LSD-13, the SI5406DC-T1-E3 balances low R_DS(on), fast switching, and ultra-compact ChipFET packaging-making it optimal for space- and thermally constrained mobile designs where both efficiency and speed matter.

Availability

SI5406DC-T1-E3 is available at Aetrix Electronics and suitable for smartphone load switching, cellular PA power control, and battery-powered medical sensors requiring stable component supply across high-volume production cycles.

Supply support for SI5406DC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and performance in harsh environments.

The Si5406DC-T1-E3 belongs to Vishay's TrenchFET® logic-level MOSFET family, engineered specifically for high-efficiency, low-voltage load switching in portable electronics where gate drive voltage is limited to 2.5–4.5 V.

FAQ

What is the maximum continuous drain current for SI5406DC-T1-E3 at 85 °C ambient temperature?

The SI5406DC-T1-E3 supports 4.9 A continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the ChipFET 1206-8 package under steady-state convection cooling. For sustained 6.8 A operation, forced airflow or PCB copper thermal spreading is required. The SI5406DC-T1-E3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" conditions.

Does SI5406DC-T1-E3 have a built-in body diode, and what is its forward voltage?

Yes, the SI5406DC-T1-E3 integrates a parasitic body diode with V_SD = 0.7–1.2 V at I_S = 1.1 A and V_GS = 0 V. This diode enables reverse-current conduction during inductive load flyback or synchronous rectification. Its low forward voltage minimizes power loss in bidirectional current paths, and the SI5406DC-T1-E3 specification sheet lists this parameter under "Diode Forward Voltage" in the Static Characteristics table.

Is SI5406DC-T1-E3 compatible with lead-free reflow soldering processes?

Yes, the SI5406DC-T1-E3 is explicitly qualified for lead-free reflow with a peak temperature of 260 °C, as stated in the "Soldering Recommendations" section of its datasheet. The "-E3" suffix denotes lead (Pb)-free construction, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). No pre-baking is required prior to reflow, and the SI5406DC-T1-E3 package withstands standard Pb-free thermal profiles without degradation.

What is the gate threshold voltage range for SI5406DC-T1-E3, and how does it affect microcontroller interfacing?

The SI5406DC-T1-E3 has a gate threshold voltage V_GS(th) of 0.6 V (typical), with min/max of 0.4 V and 1.0 V across temperature and process variation. This low threshold ensures full enhancement with 2.5 V GPIO outputs-no level shifter needed. The SI5406DC-T1-E3 reliably turns on at common logic levels used in ARM Cortex-M and Qualcomm Snapdragon platforms, supporting direct drive from battery-powered controllers.

How does the ChipFET 1206-8 package of SI5406DC-T1-E3 impact thermal design compared to SO-8 alternatives?

The ChipFET 1206-8 package delivers R_thJA = 80 °C/W (steady-state), significantly lower than typical SO-8 packages (~100–120 °C/W), due to its exposed drain pad and minimal thermal path length. However, it requires careful PCB land pattern design-copper pour under the pad must match the datasheet-recommended 3.0 × 1.5 mm stencil opening. The SI5406DC-T1-E3 thermal performance enables higher power density in mobile PCBs but demands adherence to Vishay's layout guidelines to achieve rated R_thJF = 15 °C/W.

SI5406DC-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 6.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 6.9A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 1.2mA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5406DC-T1-E3 FAQ

1.How can I place an order for SI5406DC-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5406DC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5406DC-T1-E3 reliable?

The price and inventory of SI5406DC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5406DC-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5406DC-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5406DC-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5406DC-T1-E3?

SI5406DC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5406DC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5406DC-T1-E3?

For technical support, including SI5406DC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5406DC-T1-E3 requirements.

6.How does Aetrix verify that SI5406DC-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5406DC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5406DC-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5406DC-T1-E3?

All SI5406DC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5406DC-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5406DC-T1-E3 part is unused and in its original packaging.

Return procedure for SI5406DC-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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