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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5410DU-T1-GE3

Name: SI5410DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5410DU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5410DU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5410DU-T1-GE3.pdf

Description:: MOSFET N-CH 40V 12A PPAK

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Product details

Overview

SI5410DU-T1-GE3 from Vishay Siliconix is an N-channel 40-V TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® ChipFET® package, delivering 0.018 Ω R_DS(on) at V_GS = 10 V, 12 A continuous drain current (T_C = 25 °C), and 100 % UIS tested reliability for portable load switching applications.

For engineers reviewing the SI5410DU-T1-GE3 datasheet, SI5410DU-T1-GE3 pinout, SI5410DU-T1-GE3 application, or SI5410DU-T1-GE3 equivalent, this device is selected for high-efficiency battery switching, DC-DC synchronous rectification, and compact-area power management where low on-resistance, thin profile (0.8 mm), and halogen-free compliance are critical design requirements.

Technical Context

The SI5410DU-T1-GE3 uses trench-gate silicon technology to achieve low R_DS(on) with fast switching dynamics: Q_g = 10–15 nC (V_GS = 4.5 V), t_r/t_f = 15–25 ns / 10–20 ns, and C_iss = 1350 pF at V_DS = 20 V. Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 3.0 V, enabling robust 4.5 V logic-level drive compatibility.

Thermal performance is defined by R_thJC = 3–4 °C/W (junction-to-case, steady state) and R_thJA = 34–40 °C/W (junction-to-ambient, t ≤ 5 s). The device supports safe operating area (SOA) up to 100 V and 10 A in single-pulse mode, with 18 mJ single-pulse avalanche energy rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 3.3 V/5 V/12 V rail systems and battery inputs up to 36 V nominal.
R_DS(on)	0.018 Ω @ V_GS = 10 V - Enables <170 mW conduction loss at 9.8 A, reducing thermal stress in portable load switches.
I_D (continuous)	12 A @ T_C = 25 °C - Package-limited current handling suitable for high-current battery path control without external heatsinking.
Q_g	10 nC @ V_GS = 4.5 V - Low gate charge minimizes driver power and enables efficient operation with standard logic-level controllers.
V_GS(th)	1.2–3.0 V - Ensures reliable turn-on with 3.3 V microcontrollers and avoids false triggering under noise or temperature drift.
T_J range	–55 to +150 °C - Supports industrial and automotive-adjacent environments including handheld medical and ruggedized IoT devices.
Avalanche energy	18 mJ - Confirmed 100 % UIS tested, providing robustness against inductive switching transients in DC-DC converters.

Pinout & Package

SI5410DU-T1-GE3 is housed in a leadless PowerPAK® ChipFET® single-die package (3.00 × 1.90 × 0.75 mm, 0.8 mm max height), featuring exposed-drain thermal pad on bottom side and surface-mount compatibility per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Parallel Drain terminals	All eight pins connect internally to the drain node - maximizes current capacity and thermal conduction to PCB copper pour.
4 (Gate)	Control input	Single dedicated gate terminal - optimized for low-inductance routing and minimal gate loop area in high-speed switching layouts.
5, 6 (Source)	Power return path	Two-source terminals provide low-impedance return path and reduce source inductance critical for stable switching behavior.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.018 Ω R_DS(on) at 10 V drive while maintaining 40 V V_DS rating - balances breakdown margin and conduction efficiency.
PowerPAK® ChipFET® package	0.8 mm profile and 3.0 × 1.9 mm footprint - enables ultra-thin portable designs and improves thermal coupling to PCB ground plane.
100 % UIS tested	Guarantees avalanche ruggedness to 18 mJ - eliminates need for external snubbers in battery disconnect and hot-swap circuits.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and JEDEC J-STD-020 - supports environmental compliance for global consumer and medical product certifications.
Low Q_gd/Q_gs ratio	Q_gd = 3.1 nC, Q_gs = 4.5 nC - reduces Miller effect and improves immunity to dv/dt-induced turn-on during hard-switching.

Applications

Battery Load Switch	DC-DC Synchronous Rectifier
Use Scenario: High-side main battery disconnect in smartphones, tablets, and wearables during sleep or fault conditions. IC Role / Device Role / Timing Role: N-channel MOSFET used as controlled power path switch with logic-level gate drive. Use Value: 0.018 Ω R_DS(on) limits voltage drop to <180 mV at 10 A, preserving system runtime and minimizing self-heating in sealed enclosures.	Use Scenario: Secondary-side rectification in buck converters powering SoCs or FPGAs in portable computing. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve conversion efficiency. Use Value: 10 nC Q_g at 4.5 V enables fast turn-on/turn-off synchronized with controller PWM, reducing reverse recovery losses by >30 % vs. diode solution.
PA Output Stage Switch	USB Type-C Power Delivery Switch
Use Scenario: RF power amplifier bias enable/disable in LTE/Wi-Fi front-end modules. IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling PA V_DD supply with sub-50 ns transition times. Use Value: t_r/t_f = 15–25 ns / 10–20 ns ensures clean enable timing without RF leakage or transient overshoot during state transitions.	Use Scenario: VBUS path control in USB-C receptacles supporting 20 V / 5 A PD profiles. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch managing bidirectional 20 V power routing between host and peripheral. Use Value: 40 V V_DS rating and 12 A continuous current support full USB PD 3.0 specification with margin for surge events.

Battery Load Switch

DC-DC Synchronous Rectifier

Use Scenario: High-side main battery disconnect in smartphones, tablets, and wearables during sleep or fault conditions.

IC Role / Device Role / Timing Role: N-channel MOSFET used as controlled power path switch with logic-level gate drive.

Use Value: 0.018 Ω R_DS(on) limits voltage drop to <180 mV at 10 A, preserving system runtime and minimizing self-heating in sealed enclosures.

Use Scenario: Secondary-side rectification in buck converters powering SoCs or FPGAs in portable computing.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve conversion efficiency.

Use Value: 10 nC Q_g at 4.5 V enables fast turn-on/turn-off synchronized with controller PWM, reducing reverse recovery losses by >30 % vs. diode solution.

PA Output Stage Switch

USB Type-C Power Delivery Switch

Use Scenario: RF power amplifier bias enable/disable in LTE/Wi-Fi front-end modules.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling PA V_DD supply with sub-50 ns transition times.

Use Value: t_r/t_f = 15–25 ns / 10–20 ns ensures clean enable timing without RF leakage or transient overshoot during state transitions.

Use Scenario: VBUS path control in USB-C receptacles supporting 20 V / 5 A PD profiles.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch managing bidirectional 20 V power routing between host and peripheral.

Use Value: 40 V V_DS rating and 12 A continuous current support full USB PD 3.0 specification with margin for surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	40 V, 0.022 Ω @ 10 V, 11.5 A, PowerPAK 1212-8 package (same footprint but 1.2 mm height)	Higher R_DS(on) and taller profile - less optimal for ultra-thin battery switches but offers higher SOA pulse current	Select when higher avalanche robustness (25 mJ) is prioritized over minimum thickness.
DMN3025LSD-13	30 V, 0.025 Ω @ 10 V, 10.5 A, PowerDI 3333 package (3.3 × 3.3 mm, 1.0 mm height)	Lower V_DS rating and larger footprint - suitable only for ≤24 V systems; not drop-in due to different pinout and thermal pad layout	Select for cost-sensitive 24 V applications where 40 V margin is unnecessary and board space allows larger package.

Compared with Si7157DP-T1-GE3 and DMN3025LSD-13, the SI5410DU-T1-GE3 provides the lowest profile (0.8 mm) and best R_DS(on) in its 40 V class, making it optimal for space-constrained battery-powered systems requiring minimal conduction loss and strict height budgets.

Availability

SI5410DU-T1-GE3 is available at Aetrix Electronics and suitable for battery load switching, DC-DC synchronous rectification, and USB-C power delivery applications requiring stable component supply, halogen-free compliance, and consistent thermal performance across production volumes.

Supply support for SI5410DU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and resistive components with emphasis on power efficiency, reliability, and miniaturization.

The SI5410DU-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® ChipFET® family, engineered specifically for high-current, low-voltage portable power management where thin profile, low on-resistance, and logic-level gate drive are essential.

FAQ

What is the maximum continuous drain current rating for SI5410DU-T1-GE3 at 70 °C case temperature?

The SI5410DU-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and applies under steady-state thermal conditions with adequate PCB copper area for heat spreading. Derating begins above 70 °C per the published current derating curve.

Does SI5410DU-T1-GE3 require a gate resistor for stable switching in a 4.5 V logic-driven load switch?

The SI5410DU-T1-GE3 benefits from a small gate resistor (typically 2–10 Ω) to dampen ringing and control dV/dt during turn-on/turn-off. Its Q_g of 10 nC at 4.5 V and low Q_gd/Q_gs ratio make it inherently stable, but a series gate resistor remains recommended to prevent oscillation in high-frequency or high-di/dt applications using the SI5410DU-T1-GE3.

Can SI5410DU-T1-GE3 be used in a high-side configuration with 3.3 V microcontroller GPIO?

No - the SI5410DU-T1-GE3 is an N-channel MOSFET and cannot be directly driven high-side with 3.3 V without a gate-boost circuit. It is designed for low-side switching or high-side use with gate driver ICs or charge pump circuits. For direct 3.3 V high-side control, a P-channel device like SI5515DU-T1-GE3 would be appropriate instead of the SI5410DU-T1-GE3.

What is the thermal resistance from junction to ambient (R_thJA) for SI5410DU-T1-GE3 on a standard 1" × 1" FR4 board?

The SI5410DU-T1-GE3 has a typical R_thJA of 34 °C/W and maximum of 40 °C/W when mounted on a 1" × 1" FR4 board with 1 oz copper, per the datasheet test condition (Note b). This value assumes no additional heatsinking and defines the worst-case thermal rise for ambient temperature calculations in compact PCB layouts using the SI5410DU-T1-GE3.

Is SI5410DU-T1-GE3 suitable for automotive applications per AEC-Q101?

No - the SI5410DU-T1-GE3 is not AEC-Q101 qualified. It is rated for –55 °C to +150 °C operating junction temperature and meets industrial reliability standards, but lacks the extended qualification testing required for automotive-grade deployment. For AEC-Q101-compliant alternatives, consider Vishay's SQ-series MOSFETs instead of the SI5410DU-T1-GE3.

SI5410DU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFET™ Single

SI5410DU-T1-GE3 FAQ

1.How can I place an order for SI5410DU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5410DU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5410DU-T1-GE3 reliable?

The price and inventory of SI5410DU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5410DU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5410DU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5410DU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5410DU-T1-GE3?

SI5410DU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5410DU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5410DU-T1-GE3?

For technical support, including SI5410DU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5410DU-T1-GE3 requirements.

6.How does Aetrix verify that SI5410DU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5410DU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5410DU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5410DU-T1-GE3?

All SI5410DU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5410DU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5410DU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5410DU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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