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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5411EDU-T1-GE3

Name: SI5411EDU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5411EDU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5411EDU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5411EDU-T1-GE3.pdf

Description:: MOSFET P-CH 12V 25A PPAK

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Product details

Overview

SI5411EDU-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in portable power rails. It features -12 V drain-source rating, 0.0082 Ω R_DS(on) at V_GS = -4.5 V, -25 A continuous drain current (T_C = 25 °C), and 43 nC total gate charge - optimized for battery protection and power-path control in smartphones and tablet PCs.

For engineers reviewing the SI5411EDU-T1-GE3 datasheet, SI5411EDU-T1-GE3 pinout, SI5411EDU-T1-GE3 application, or SI5411EDU-T1-GE3 equivalent, key selection criteria include low R_DS(on) at logic-level gate drive (-2.5 V to -4.5 V), thermally enhanced PowerPAK® ChipFET packaging, and robust UIS/ESD performance (5000 V HBM) for space-constrained mobile power management designs.

Technical Context

This device operates as a single P-channel switch with gate threshold voltage of -0.4 V to -0.9 V and exhibits strong transconductance (45 S typical) for fast turn-on under low-voltage bias. Its body diode has V_SD = -0.8 to -1.2 V at -10 A and t_rr = 45–90 ns, supporting synchronous rectification and reverse-current blocking in DC-DC output stages.

The MOSFET uses TrenchFET® technology to achieve low on-resistance while maintaining tight parametric distribution across temperature. Thermal resistance is specified at R_thJC = 3–4 °C/W (junction-to-case) and R_thJA = 34–40 °C/W (junction-to-ambient, t ≤ 5 s), enabling high-power density operation on compact FR4 PCBs without external heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum allowable drain-source voltage; defines safe operating range for 3.3 V and 5 V system rails.
R_DS(on) @ V_GS = -4.5 V	0.0082 Ω max - Enables <100 mW conduction loss at 10 A, critical for battery-switch efficiency in portable devices.
I_D (continuous, T_C = 25 °C)	-25 A - Supports high-current load switching (e.g., USB-C PD power path, display backlight drivers).
Q_g @ V_GS = -4.5 V	43 nC typical - Determines gate driver sizing and switching loss; enables sub-100 ns turn-on with 1 Ω source impedance.
V_GS(th)	-0.4 to -0.9 V - Ensures reliable turn-on with standard logic-level controllers (e.g., PMIC GPIOs, microcontroller outputs).
R_thJC	3–4 °C/W - Confirms efficient heat transfer to PCB copper; allows >20 W dissipation with minimal thermal pad area.
E_AS	11 mJ - Specifies avalanche energy handling capability; supports robustness against inductive load transients.

Pinout & Package

SI5411EDU-T1-GE3 is housed in a leadless PowerPAK® ChipFET package (3.00 mm × 1.90 mm × 0.75 mm), featuring exposed-drain thermal pads on the bottom side and surface-mount compatibility per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6, 7, 8	Drain (D)	Internally connected to common drain node; electrically and thermally tied to exposed copper pad for low-inductance, high-current paths.
4, 5	Source (S)	Common source connection; forms return path for load current and body diode conduction.
4	Gate (G)	Single gate input terminal; requires ESD-safe handling due to 5000 V HBM rating and low gate oxide thickness.

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers industry-leading R_DS(on) × area ratio for P-channel devices, reducing board space by ≥30% vs. comparable SO-8 MOSFETs.
Thermally enhanced PowerPAK® ChipFET	Enables 31 W power dissipation at T_C = 25 °C with no heatsink - ideal for ultra-thin mobile PCBs where height <0.8 mm is mandatory.
100 % R_g and UIS tested	Guarantees gate resistance consistency (0.7–7.2 Ω) and unclamped inductive switching reliability across production lots.
5000 V HBM ESD rating	Eliminates need for external ESD protection in handheld assembly lines, reducing BOM count and test complexity.
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and IEC 61249-2-21, supporting green manufacturing and export compliance without derating.

Applications

Smartphone Battery Protection	Tablet PC Load Switching
Use Scenario: Isolating main Li-ion battery during charging, system sleep, or fault conditions to prevent leakage and thermal runaway. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by PMIC enable signal; operates in static on/off mode with <1 μs response to fault interrupts. Use Value: 0.0082 Ω R_DS(on) limits voltage drop to <82 mV at 10 A, preserving battery runtime and minimizing self-heating in sealed enclosures.	Use Scenario: Enabling/disabling auxiliary power rails (e.g., camera module, LTE modem) based on application processor activity states. IC Role / Device Role / Timing Role: Load switch with integrated body diode; handles bidirectional current during hot-plug events and power sequencing. Use Value: 43 nC Q_g allows full turn-on within 50 ns using standard 3.3 V GPIO, enabling dynamic rail gating with <10 μs latency.
Mobile Computing Power Management	USB-C Power Delivery Path Control
Use Scenario: Managing power distribution between AC adapter, battery, and system loads in 2-in-1 detachable laptops. IC Role / Device Role / Timing Role: Bidirectional P-channel switch supporting reverse current blocking and seamless source handover. Use Value: Body diode V_SD = -0.8 to -1.2 V ensures <1.2 V forward drop during reverse conduction, minimizing voltage sag during adapter insertion/removal.	Use Scenario: Controlling V_BUS path direction in dual-role USB-C ports to support DRP (dual-role port) negotiation and cable orientation detection. IC Role / Device Role / Timing Role: Directional power switch with fast turn-off (<70 ns td(off)) to meet USB PD 3.0 fault response timing requirements. Use Value: 11 mJ E_AS withstands 100 μs inductive transients from hot-swap events, preventing latch-up during cable plug/unplug cycles.

Smartphone Battery Protection

Tablet PC Load Switching

Use Scenario: Isolating main Li-ion battery during charging, system sleep, or fault conditions to prevent leakage and thermal runaway.

IC Role / Device Role / Timing Role: High-side P-channel switch controlled by PMIC enable signal; operates in static on/off mode with <1 μs response to fault interrupts.

Use Value: 0.0082 Ω R_DS(on) limits voltage drop to <82 mV at 10 A, preserving battery runtime and minimizing self-heating in sealed enclosures.

Use Scenario: Enabling/disabling auxiliary power rails (e.g., camera module, LTE modem) based on application processor activity states.

IC Role / Device Role / Timing Role: Load switch with integrated body diode; handles bidirectional current during hot-plug events and power sequencing.

Use Value: 43 nC Q_g allows full turn-on within 50 ns using standard 3.3 V GPIO, enabling dynamic rail gating with <10 μs latency.

Mobile Computing Power Management

USB-C Power Delivery Path Control

Use Scenario: Managing power distribution between AC adapter, battery, and system loads in 2-in-1 detachable laptops.

IC Role / Device Role / Timing Role: Bidirectional P-channel switch supporting reverse current blocking and seamless source handover.

Use Value: Body diode V_SD = -0.8 to -1.2 V ensures <1.2 V forward drop during reverse conduction, minimizing voltage sag during adapter insertion/removal.

Use Scenario: Controlling V_BUS path direction in dual-role USB-C ports to support DRP (dual-role port) negotiation and cable orientation detection.

IC Role / Device Role / Timing Role: Directional power switch with fast turn-off (<70 ns td(off)) to meet USB PD 3.0 fault response timing requirements.

Use Value: 11 mJ E_AS withstands 100 μs inductive transients from hot-swap events, preventing latch-up during cable plug/unplug cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si5407EDU-T1-GE3	R_DS(on) = 0.0065 Ω @ -4.5 V (lower), but V_DS = -8 V (reduced voltage margin)	Suitable only for ≤5 V systems; not recommended for 12 V tolerant designs or legacy 3.3/5 V mixed-rail architectures.	Select when lowest possible conduction loss is required and system V_IN never exceeds 6 V.
DMN3026LSD-13	R_DS(on) = 0.0095 Ω @ -4.5 V (slightly higher), SO-8 package (larger footprint, higher R_thJA = 62 °C/W)	Requires more PCB area and additional thermal vias; better suited for industrial boards with less stringent size constraints.	Choose when existing SO-8 layout reuse is prioritized over miniaturization and thermal performance.

Compared with SI5411EDU-T1-GE3, Si5407EDU-T1-GE3 offers lower on-resistance but sacrifices voltage headroom, while DMN3026LSD-13 trades compactness and thermal efficiency for package compatibility - making SI5411EDU-T1-GE3 the optimal balance for next-gen portable power switches demanding both space savings and 12 V tolerance.

Availability

SI5411EDU-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery protection, tablet PC load switching, and mobile computing power management requiring stable component supply and long-term lifecycle support.

Supply support for SI5411EDU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SI54xx series targets portable electronics power management, delivering logic-level P-channel MOSFETs with ultra-low R_DS(on) and thermally optimized ChipFET packaging for space- and efficiency-critical designs.

FAQ

What is the maximum continuous drain current rating for SI5411EDU-T1-GE3 at 70 °C case temperature?

The SI5411EDU-T1-GE3 supports -25 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C due to the thermal design of the PowerPAK® ChipFET package. This reflects its ability to sustain high current without derating up to 70 °C case temperature, provided adequate PCB copper area is used for heat spreading.

Does SI5411EDU-T1-GE3 require a gate resistor for stable switching in portable applications?

SI5411EDU-T1-GE3 benefits from an external gate resistor (typically 1–10 Ω) to control dV/dt and suppress ringing during fast switching. Its gate resistance is specified as 0.7–7.2 Ω, and adding a small series resistor improves EMI performance and reduces shoot-through risk when paired with complementary N-channel drivers in half-bridge configurations.

Can SI5411EDU-T1-GE3 be used in reverse polarity protection circuits?

Yes, SI5411EDU-T1-GE3 is well-suited for reverse polarity protection due to its P-channel topology and low R_DS(on). When placed in the high-side position with gate tied to ground, it blocks reverse current flow while introducing minimal forward voltage drop - typically <82 mV at 10 A - preserving system efficiency and thermal budget.

What is the body diode forward voltage of SI5411EDU-T1-GE3 at -10 A and room temperature?

The body diode forward voltage (V_SD) of SI5411EDU-T1-GE3 is -0.8 to -1.2 V at I_S = -10 A and T_J = 25 °C. This parameter is critical for applications involving bidirectional current flow, such as USB-C power path management, where low forward drop minimizes conduction losses during reverse conduction events.

Is SI5411EDU-T1-GE3 compatible with reflow soldering per JEDEC J-STD-020?

Yes, SI5411EDU-T1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C, compliant with JEDEC J-STD-020. The PowerPAK® ChipFET package is designed for standard PCB assembly processes, though manual soldering with an iron is not recommended due to its leadless construction and thermal mass characteristics.

SI5411EDU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 8.2mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 31W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFet Single

SI5411EDU-T1-GE3 FAQ

1.How can I place an order for SI5411EDU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5411EDU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5411EDU-T1-GE3 reliable?

The price and inventory of SI5411EDU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5411EDU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5411EDU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5411EDU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5411EDU-T1-GE3?

SI5411EDU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5411EDU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5411EDU-T1-GE3?

For technical support, including SI5411EDU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5411EDU-T1-GE3 requirements.

6.How does Aetrix verify that SI5411EDU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5411EDU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5411EDU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5411EDU-T1-GE3?

All SI5411EDU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5411EDU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5411EDU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5411EDU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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