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Vishay Siliconix SI5414DC-T1-GE3
- Part No.:
- SI5414DC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
SI5414DC-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 6A 1206-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,669
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Product details
Overview
SI5414DC-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Power MOSFET in a leadless 1206-8 ChipFET package, delivering 6 A continuous drain current at TC = 25 °C, RDS(on) = 0.017 Ω at VGS = 4.5 V, and 12.5 nC total gate charge - optimized for notebook system power load switching.
For engineers reviewing the SI5414DC-T1-GE3 datasheet, SI5414DC-T1-GE3 pinout, SI5414DC-T1-GE3 application, or SI5414DC-T1-GE3 equivalent, this part supports high-efficiency, space-constrained DC load switching where low on-resistance, fast switching, and halogen-free RoHS compliance are critical design requirements.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low RDS(on) with stable threshold voltage (VGS(th) = 0.6–1.5 V) and robust gate oxide integrity (±12 V VGS rating). Its 1206-8 ChipFET package features exposed drain pads for thermal conduction and eliminates leads to reduce parasitic inductance.
Dynamic performance is characterized by 1500 pF input capacitance (Ciss), 125 pF reverse transfer capacitance (Crss), and 14–25 ns turn-on delay under 4.5 V gate drive - enabling efficient operation in synchronous buck and load-switch topologies up to ~1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines safe operating range in 3.3 V/5 V/12 V rail applications. |
| RDS(on) | 0.017 Ω at VGS = 4.5 V - Enables <100 mW conduction loss at 6 A, critical for thermally constrained PCB layouts. |
| ID (continuous) | 6 A at TC = 25 °C - Package-limited current rating; derates to 4 W at TC = 70 °C per thermal resistance data. |
| Qg | 12.5 nC at VGS = 4.5 V - Determines gate driver strength requirement; enables fast switching with low drive power. |
| RthJF | 15 °C/W (typ.) - Junction-to-foot thermal resistance; confirms effective heat transfer from die to PCB copper via exposed drain pad. |
| VGS(th) | 0.6–1.5 V - Low-threshold logic-level compatibility; ensures full enhancement with 2.5 V–4.5 V microcontroller GPIOs. |
| Ciss | 1500 pF - Input capacitance governs gate drive energy and Miller effect; impacts EMI and switching loss trade-offs. |
Pinout & Package
The SI5414DC-T1-GE3 uses a leadless 1206-8 ChipFET package with three terminals: Drain (D), Gate (G), and Source (S). The bottom-side exposed drain pad serves as both electrical connection and primary thermal path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current-carrying terminal (high-side or low-side switch node) | Exposed copper pad on bottom surface; must be soldered to large PCB copper area for thermal and current handling. |
| G (Gate) | Control electrode for channel modulation | Single top-side pad; requires low-inductance routing and gate resistor to manage dV/dt and ringing. |
| S (Source) | Reference node for gate drive and current return path | Top-side pad adjacent to gate; forms local ground reference for gate driver loop; minimizes common-source inductance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low RDS(on) in compact ChipFET footprint without sacrificing ruggedness or gate oxide reliability. |
| 100 % Rg tested | Ensures consistent gate resistance (0.46–4.6 Ω) across production lots, improving predictability of switching timing and EMI behavior. |
| Lead (Pb)-free and halogen-free | Meets IEC 61249-2-21 and RoHS 2002/95/EC; eliminates hazardous substances without compromising thermal or electrical performance. |
| Exposed drain thermal pad | Provides direct thermal path from junction to PCB; achieves 15 °C/W RthJF, enabling higher power density than leaded SO-8 equivalents. |
Applications
| Notebook System Power | USB-C Load Switch |
|---|---|
Use Scenario: Main 5 V/3.3 V rail power sequencing and hot-swap protection in ultraportable notebooks. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery to DDR memory, display backlight, or USB peripherals. Use Value: 0.017 Ω RDS(on) limits voltage drop to <100 mV at 6 A, preserving rail accuracy and reducing self-heating in tight thermal envelopes. |
Use Scenario: Controlled power enable/disable for USB-C downstream ports with overcurrent detection interface. IC Role / Device Role / Timing Role: High-speed, logic-level-controlled power switch responding to USB PD controller signals. Use Value: 12.5 nC Qg and 14 ns td(on) support sub-microsecond turn-on, enabling rapid port reconfiguration during cable insertion/removal. |
| SSD Power Management | Embedded Controller Power Gating |
Use Scenario: Independent power gating for NAND flash modules and controller ICs in M.2 NVMe SSDs. IC Role / Device Role / Timing Role: High-reliability, low-leakage power switch isolating domains during sleep states. Use Value: 1 µA IDSS at 20 V and -55 to 150 °C operating range ensure minimal standby current and extended storage lifetime. |
Use Scenario: Dynamic power domain control for ARM Cortex-M based microcontrollers in industrial edge nodes. IC Role / Device Role / Timing Role: Logic-compatible power switch enabling firmware-controlled wake-up/sleep transitions. Use Value: 0.6–1.5 V VGS(th) guarantees reliable turn-on with 1.8 V/3.3 V I/O domains, eliminating need for level-shifting circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | Higher RDS(on) (0.025 Ω @ 4.5 V), same 20 V VDS, larger PowerPAK 1212-8 package | Lower current density; better suited for designs requiring higher pulse current margin or easier rework | Select when thermal headroom >10 °C or manual rework capability is required; not pin-compatible due to different footprint. |
| DMN2025LSD-13 | Lower Qg (9.5 nC), slightly higher RDS(on) (0.022 Ω @ 4.5 V), same 1206-8 ChipFET package | Reduced gate drive loss but higher conduction loss; optimized for higher-frequency (>2 MHz) switching | Prefer for high-frequency load switching where gate drive efficiency outweighs conduction loss; pinout identical but marking and thermal pad layout differ. |
Compared with Si7157DP-T1-GE3 and DMN2025LSD-13, the SI5414DC-T1-GE3 delivers the lowest RDS(on) in the 1206-8 footprint, making it optimal for thermally aggressive, high-current load switching - while DMN2025LSD-13 trades conduction loss for faster switching, and Si7157DP-T1-GE3 offers mechanical robustness at the cost of size and efficiency.
Availability
SI5414DC-T1-GE3 is available at Aetrix Electronics and suitable for notebook system power, USB-C load switching, and SSD power management requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SI5414DC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.
The SI5414DC-T1-GE3 belongs to Vishay's TrenchFET® Gen IV low-voltage power MOSFET family, engineered specifically for space-constrained, high-efficiency DC load switching in portable computing and peripheral power systems.
FAQ
What is the maximum continuous drain current rating for the SI5414DC-T1-GE3?
The SI5414DC-T1-GE3 is rated for 6 A continuous drain current at case temperature TC = 25 °C, limited by package thermal constraints. At TC = 70 °C, the rating drops to 4 A, and derating follows the published curve down to zero at TC = 125 °C. This rating assumes proper PCB copper area for thermal conduction via the exposed drain pad.
Does the SI5414DC-T1-GE3 require a gate resistor in typical load-switch applications?
Yes - the SI5414DC-T1-GE3 benefits from a series gate resistor (typically 1–10 Ω) to dampen ringing caused by gate-drain capacitance (Crss = 125 pF) and PCB trace inductance. Without it, fast edges may induce overshoot or false turn-on; the resistor also controls dV/dt during switching to reduce EMI and body-diode stress.
Can the SI5414DC-T1-GE3 be used in high-temperature environments like automotive under-hood applications?
No - the SI5414DC-T1-GE3 is specified for -55 to +150 °C junction temperature but is not AEC-Q101 qualified. Its thermal resistance (RthJA = 40–50 °C/W) and packaging are optimized for consumer portable electronics, not automotive transients or humidity cycling. For under-hood use, select Vishay's AEC-Q101-qualified 20 V TrenchFETs such as SQ2364E.
How does the SI5414DC-T1-GE3 handle reverse recovery in body diode operation?
The SI5414DC-T1-GE3 body diode has a reverse recovery time (trr) of 20–40 ns and Qrr of 10–20 nC at IF = 7.9 A and dI/dt = 100 A/µs. These values indicate moderate softness and low stored charge - suitable for non-synchronous flyback or freewheeling in low-duty-cycle loads, but not recommended for hard-commutated synchronous rectification.
Is the SI5414DC-T1-GE3 compatible with standard reflow soldering profiles?
Yes - the SI5414DC-T1-GE3 is qualified for lead-free reflow with peak temperature up to 260 °C per JEDEC J-STD-020. Its ChipFET construction requires precise stencil design and placement to ensure uniform solder paste volume on the exposed drain pad and top-side terminals; manual soldering with an iron is not recommended due to thermal mass imbalance.
SI5414DC-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 9.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 6.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 1206-8 ChipFET™
SI5414DC-T1-GE3 FAQ
1.How can I place an order for SI5414DC-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI5414DC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI5414DC-T1-GE3 reliable?
The price and inventory of SI5414DC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5414DC-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI5414DC-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5414DC-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI5414DC-T1-GE3?
SI5414DC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI5414DC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI5414DC-T1-GE3?
For technical support, including SI5414DC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5414DC-T1-GE3 requirements.
6.How does Aetrix verify that SI5414DC-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI5414DC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5414DC-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI5414DC-T1-GE3?
All SI5414DC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5414DC-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI5414DC-T1-GE3 part is unused and in its original packaging.
Return procedure for SI5414DC-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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