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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5415AEDU-T1-GE3

Name: SI5415AEDU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5415AEDU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5415AEDU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5415AEDU-T1-GE3.pdf

Description:: MOSFET P-CH 20V 25A PPAK

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Product details

Overview

SI5415AEDU-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® ChipFET package, rated for -20 V V_DS, 0.0096 Ω R_DS(on) at -4.5 V V_GS, and -25 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency load switch in portable battery-powered systems.

For engineers reviewing the SI5415AEDU-T1-GE3 datasheet, SI5415AEDU-T1-GE3 pinout, SI5415AEDU-T1-GE3 application, or SI5415AEDU-T1-GE3 equivalent, this device is selected for low-voltage, high-current switching where thermal performance, gate drive compatibility with 1.8–4.5 V logic, and compact footprint are critical.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge (43 nC typical at V_GS = -4.5 V). Its body diode exhibits 35 ns reverse recovery time and 21 nC Q_rr, supporting synchronous rectification and bidirectional current handling in power management circuits.

The device operates with gate threshold voltage between -0.4 V and -1.0 V, enabling reliable turn-on with standard logic-level drivers. Thermal resistance is specified at 3 °C/W (junction-to-case) and 34 °C/W (junction-to-ambient, t ≤ 5 s), reflecting its thermally enhanced PowerPAK ChipFET construction optimized for PCB copper-area conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage compatible with 3.3 V and 5 V system rails.
R_DS(on) @ V_GS = -4.5 V	0.0096 Ω - Enables <100 mW conduction loss at 10 A, reducing heat generation in compact layouts.
I_D (continuous, T_C = 25 °C)	-25 A - Supports high-current load switching without external heatsinking under case-cooled conditions.
Q_g (typ.)	43 nC - Low gate charge allows fast switching with modest driver strength, minimizing switching losses.
R_thJC	3 °C/W - Efficient junction-to-case thermal path enables direct mounting to thermal pads or copper planes.
V_GS(th)	-0.4 to -1.0 V - Ensures robust turn-on with 1.8 V and higher logic outputs, avoiding partial enhancement.
Body diode V_SD	-0.8 to -1.2 V - Low forward drop supports efficient reverse current conduction during dead-time intervals.

Pinout & Package

SI5415AEDU-T1-GE3 is housed in a leadless PowerPAK® ChipFET single-package (3.00 mm × 1.90 mm × 0.75 mm), featuring exposed-drain thermal pads on the bottom side and surface-mount terminals. The package uses copper substrate construction for low thermal resistance and high current capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6, 7, 8	Drain (D)	Internally connected to large copper drain pad; primary current path and thermal conduction path to PCB.
4	Source (S)	Common return node for load current; tied to ground or negative rail in high-side switch configurations.
5	Gate (G)	Control input requiring negative voltage relative to source to turn on; sensitive to ESD (5500 V HBM).

Key Features

Feature	Design Value
TrenchFET® process	Delivers ultra-low R_DS(on) and high cell density in small footprint, improving power density over planar MOSFETs.
Thermally enhanced PowerPAK ChipFET	Reduces R_thJC to 3 °C/W, allowing >20 W dissipation with minimal case temperature rise when mounted on 1" × 1" FR4.
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world loads.
ESD protection	5500 V HBM rating eliminates need for external ESD protection in handheld device front-end switches.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, suitable for consumer and medical-grade assemblies.

Applications

Smartphone Battery Protection	Tablet PC Load Switching
Use Scenario: Isolating main battery from system during deep sleep or fault conditions to minimize standby leakage. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling battery-to-system power path with logic-level enable. Use Value: Achieves <1 μA off-state leakage and <100 mΩ on-resistance, extending battery life by >15% in always-on subsystems.	Use Scenario: Enabling/disabling USB-C port power delivery circuitry based on peripheral detection and policy control. IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch managing 3.3 V/5 V auxiliary rails with fast turn-on (<60 ns). Use Value: Supports 2.5 A continuous current with <25 mW conduction loss, eliminating thermal derating in thin-profile tablets.
Mobile Computing Power Management	USB OTG Power Control
Use Scenario: Controlling power to SSD or eMMC modules during suspend/resume transitions in ultrabooks and 2-in-1 devices. IC Role / Device Role / Timing Role: Logic-compatible P-channel switch providing controlled ramp-up of 1.8 V/3.3 V I/O supplies. Use Value: Gate threshold (-0.4 to -1.0 V) ensures full enhancement with 1.8 V GPIO, eliminating level-shifter requirements.	Use Scenario: Managing VBUS power direction and isolation between host and peripheral modes in dual-role USB ports. IC Role / Device Role / Timing Role: Bidirectional switch leveraging low V_SD body diode and symmetric R_DS(on) for reverse current support. Use Value: Body diode forward voltage of -0.8 to -1.2 V minimizes voltage drop during OTG reverse-power scenarios.

Smartphone Battery Protection

Tablet PC Load Switching

Use Scenario: Isolating main battery from system during deep sleep or fault conditions to minimize standby leakage.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling battery-to-system power path with logic-level enable.

Use Value: Achieves <1 μA off-state leakage and <100 mΩ on-resistance, extending battery life by >15% in always-on subsystems.

Use Scenario: Enabling/disabling USB-C port power delivery circuitry based on peripheral detection and policy control.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch managing 3.3 V/5 V auxiliary rails with fast turn-on (<60 ns).

Use Value: Supports 2.5 A continuous current with <25 mW conduction loss, eliminating thermal derating in thin-profile tablets.

Mobile Computing Power Management

USB OTG Power Control

Use Scenario: Controlling power to SSD or eMMC modules during suspend/resume transitions in ultrabooks and 2-in-1 devices.

IC Role / Device Role / Timing Role: Logic-compatible P-channel switch providing controlled ramp-up of 1.8 V/3.3 V I/O supplies.

Use Value: Gate threshold (-0.4 to -1.0 V) ensures full enhancement with 1.8 V GPIO, eliminating level-shifter requirements.

Use Scenario: Managing VBUS power direction and isolation between host and peripheral modes in dual-role USB ports.

IC Role / Device Role / Timing Role: Bidirectional switch leveraging low V_SD body diode and symmetric R_DS(on) for reverse current support.

Use Value: Body diode forward voltage of -0.8 to -1.2 V minimizes voltage drop during OTG reverse-power scenarios.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si5407DC-T1-GE3	Same PowerPAK ChipFET package; -20 V V_DS, but higher R_DS(on) (0.0132 Ω @ -2.5 V) and lower I_D (-15 A).	Lower current capability suits sub-10 A applications; less suitable for high-power tablet battery switches.	Select when gate drive is limited to -2.5 V and peak current ≤12 A; offers tighter V_GS(th) distribution.
DMN2020LFG-7	Diodes Inc. P-channel MOSFET in PowerDI™ 3333 package; -20 V, 0.012 Ω @ -4.5 V, -12 A; R_thJA = 62 °C/W (higher).	Larger thermal resistance requires more PCB copper area; not drop-in due to different pinout and footprint.	Choose when supply chain diversification is needed and layout can accommodate larger 3.3 mm × 3.3 mm footprint.

Compared with Si5407DC-T1-GE3 and DMN2020LFG-7, SI5415AEDU-T1-GE3 delivers the lowest R_DS(on) and highest continuous current in the same 3.0 mm × 1.9 mm footprint, making it optimal for space-constrained, high-efficiency battery switches where thermal headroom is limited.

Availability

SI5415AEDU-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery protection, tablet PC load switching, and mobile computing power management requiring stable component supply across high-volume production cycles.

Supply support for SI5415AEDU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI5415AEDU-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK ChipFET family, engineered for ultra-low on-resistance and high current density in portable electronics power switching applications.

FAQ

What is the maximum continuous drain current rating for SI5415AEDU-T1-GE3 at 70 °C case temperature?

The SI5415AEDU-T1-GE3 supports -25 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area per Vishay's recommended pad layout (Document 69948), and reflects the device's robust thermal performance in the PowerPAK ChipFET package.

Does SI5415AEDU-T1-GE3 require a gate driver IC for operation with 1.8 V microcontroller GPIO?

Yes, SI5415AEDU-T1-GE3 can be directly driven by 1.8 V GPIO because its gate threshold voltage range (-0.4 V to -1.0 V) ensures full enhancement at V_GS = -1.8 V. No external gate driver is required, simplifying circuit design and reducing BOM count in space-constrained portable applications using the SI5415AEDU-T1-GE3.

What is the thermal resistance from junction to ambient for SI5415AEDU-T1-GE3 under standard mounting conditions?

The SI5415AEDU-T1-GE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 34 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper, as defined in the Thermal Resistance Ratings table. This value applies for pulse durations ≤5 s; steady-state R_thJA is higher and depends on PCB layout and copper area.

Is SI5415AEDU-T1-GE3 suitable for reverse polarity protection in USB-C power delivery circuits?

Yes, SI5415AEDU-T1-GE3 is commonly used for reverse polarity protection in USB-C PD designs due to its -20 V V_DS rating, low R_DS(on), and integrated body diode with 35 ns t_rr. Its PowerPAK ChipFET package supports high current density, and the device's -25 A continuous rating handles up to 5 V/3 A USB-C power paths without derating when properly heatsinked.

How does the body diode performance of SI5415AEDU-T1-GE3 compare to standard Schottky diodes in OR-ing applications?

The SI5415AEDU-T1-GE3 body diode has a forward voltage of -0.8 to -1.2 V at -10 A and reverse recovery time of 35 ns, offering lower conduction loss than discrete 20 V Schottky diodes (typically 0.3–0.5 V) only when used in synchronous rectification mode with active gate control. In passive OR-ing, its V_F is higher, so it is best applied in controlled high-side switch roles rather than freewheeling diode replacement.

SI5415AEDU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 9.6mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 4300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 31W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFet Single

SI5415AEDU-T1-GE3 FAQ

1.How can I place an order for SI5415AEDU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5415AEDU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5415AEDU-T1-GE3 reliable?

The price and inventory of SI5415AEDU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5415AEDU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5415AEDU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5415AEDU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5415AEDU-T1-GE3?

SI5415AEDU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5415AEDU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5415AEDU-T1-GE3?

For technical support, including SI5415AEDU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5415AEDU-T1-GE3 requirements.

6.How does Aetrix verify that SI5415AEDU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5415AEDU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5415AEDU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5415AEDU-T1-GE3?

All SI5415AEDU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5415AEDU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5415AEDU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5415AEDU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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