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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5424DC-T1-GE3

Name: SI5424DC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5424DC-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5424DC-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5424DC-T1-GE3.pdf

Description:: MOSFET N-CH 30V 6A 1206-8

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Product details

Overview

SI5424DC-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a ChipFET 1206-8 leadless package, delivering R_DS(on) = 0.024 Ω at V_GS = 10 V, 6 A continuous drain current, and 11 nC total gate charge - optimized for high-efficiency load switching in space-constrained notebook PC power rails.

For engineers reviewing the SI5424DC-T1-GE3 datasheet, SI5424DC-T1-GE3 pinout, SI5424DC-T1-GE3 application, or SI5424DC-T1-GE3 equivalent, key selection criteria include its 30 V V_DS, low 0.024 Ω on-resistance at 10 V drive, thermal resistance of 15 °C/W (junction-to-foot), 1206-8 footprint compatibility with TSOP-6 visual layout, and verified performance under 70 °C case temperature derating.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 11 nC (at 4.5 V) and t_f = 9–14 ns. Its gate threshold voltage (V_GS(th)) ranges from 1.1 V to 2.3 V, enabling robust turn-on with standard 3.3 V or 5 V logic-level gate drivers.

The device integrates a body diode with V_SD = 0.8–1.2 V at 4.3 A and t_rr = 24–36 ns, supporting synchronous rectification and bidirectional current handling in compact DC-DC output stages and battery protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 28 V nominal with 2 V margin for transients
R_DS(on)	0.024 Ω at V_GS = 10 V - enables ≤144 mW conduction loss at 6 A, critical for thermally constrained PCBs
I_D (continuous)	6 A at T_C = 25 °C - rated for sustained load-switch operation without forced airflow
Q_g	11 nC at V_GS = 4.5 V - ensures fast, low-drive-power switching with 3.3 V controllers
R_thJF	15 °C/W typical - provides SO-8–class thermal performance in 80% smaller 1206-8 footprint
V_GS(th)	1.1–2.3 V - guarantees reliable enhancement-mode turn-on with standard logic-level gate signals
t_f	9–14 ns - minimizes switching losses in high-frequency (>500 kHz) DC-DC converters

Pinout & Package

SI5424DC-T1-GE3 uses the ChipFET 1206-8 surface-mount package: 3.05 mm × 1.90 mm × 0.20 mm body, leadless construction with exposed copper drain terminals on bottom side. Thermal path optimized via direct die-to-PCB conduction through six drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,6,7,8 (Drain)	Main current path (D)	Six parallel drain terminals reduce effective R_DS(on) and improve thermal spreading into PCB copper
4 (Gate)	Control electrode (G)	Single gate terminal accepting standard CMOS/TTL logic drive; no internal level-shifting required
5 (Source)	Reference node (S)	Source terminal tied to local ground plane; defines V_GS reference for gate drive and current sensing

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.024 Ω R_DS(on) in ultra-small 1206-8 footprint - 40% lower on-resistance than comparable 1206-6 MOSFETs
ChipFET 1206-8 package	Same board area as 1206 passives but delivers SO-8 thermal performance (R_thJF = 15 °C/W) via exposed drain leads
Low Q_g / Q_gd ratio	Q_gd = 4.2 nC / Q_g = 11 nC → 38% - improves hard-switching EMI and reduces Miller-induced shoot-through risk
Body diode t_rr	24–36 ns - supports efficient synchronous rectification in buck converters without external Schottky replacement
Pb-free & halogen-free	Meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS/REACH compliance for industrial and computing applications

Applications

Notebook PC Load Switch	USB-C Power Delivery Switch
Use Scenario: Enables/disables 5–20 V power rails to discrete subsystems (e.g., display backlight, SSD, USB ports) based on system sleep/wake state. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery path; operates in linear or saturated mode depending on gate drive. Use Value: 0.024 Ω R_DS(on) limits voltage drop to <150 mV at 6 A, preserving rail accuracy; 1206-8 footprint saves >60% board area vs. SO-8 alternatives.	Use Scenario: Controls power path between USB-C port and internal 5/9/15/20 V PD sink circuitry during hot-plug negotiation and fault isolation. IC Role / Device Role / Timing Role: Bidirectional load switch managing forward and reverse current flow; body diode handles reverse recovery during PDO transitions. Use Value: V_SD = 0.8–1.2 V and t_rr = 24–36 ns minimize conduction and switching losses during dynamic PD contract changes.
DC-DC Converter Synchronous Rectifier	Battery Protection Circuit
Use Scenario: Replaces external Schottky diode in buck converter output stage to improve efficiency at light-to-moderate loads (1–5 A). IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary PWM signal; body diode conducts during dead time. Use Value: R_DS(on) = 0.024 Ω cuts conduction loss by >65% vs. 0.4 V Schottky at 4 A; fast t_f = 9–14 ns reduces overlap loss.	Use Scenario: Isolates lithium-ion battery pack from system during overcurrent, short-circuit, or overtemperature events in portable electronics. IC Role / Device Role / Timing Role: Primary protection FET in high-side configuration; controlled by battery management IC to interrupt charge/discharge paths. Use Value: 30 V V_DS accommodates 4S Li-ion (16.8 V max) with 13.2 V headroom for surge suppression; 6 A I_D supports 2–3 C discharge rates.

Notebook PC Load Switch

USB-C Power Delivery Switch

Use Scenario: Enables/disables 5–20 V power rails to discrete subsystems (e.g., display backlight, SSD, USB ports) based on system sleep/wake state.

IC Role / Device Role / Timing Role: High-side load switch controlling power delivery path; operates in linear or saturated mode depending on gate drive.

Use Value: 0.024 Ω R_DS(on) limits voltage drop to <150 mV at 6 A, preserving rail accuracy; 1206-8 footprint saves >60% board area vs. SO-8 alternatives.

Use Scenario: Controls power path between USB-C port and internal 5/9/15/20 V PD sink circuitry during hot-plug negotiation and fault isolation.

IC Role / Device Role / Timing Role: Bidirectional load switch managing forward and reverse current flow; body diode handles reverse recovery during PDO transitions.

Use Value: V_SD = 0.8–1.2 V and t_rr = 24–36 ns minimize conduction and switching losses during dynamic PD contract changes.

DC-DC Converter Synchronous Rectifier

Battery Protection Circuit

Use Scenario: Replaces external Schottky diode in buck converter output stage to improve efficiency at light-to-moderate loads (1–5 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary PWM signal; body diode conducts during dead time.

Use Value: R_DS(on) = 0.024 Ω cuts conduction loss by >65% vs. 0.4 V Schottky at 4 A; fast t_f = 9–14 ns reduces overlap loss.

Use Scenario: Isolates lithium-ion battery pack from system during overcurrent, short-circuit, or overtemperature events in portable electronics.

IC Role / Device Role / Timing Role: Primary protection FET in high-side configuration; controlled by battery management IC to interrupt charge/discharge paths.

Use Value: 30 V V_DS accommodates 4S Li-ion (16.8 V max) with 13.2 V headroom for surge suppression; 6 A I_D supports 2–3 C discharge rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	30 V, R_DS(on) = 0.022 Ω @ 10 V, but 8-pin SO-8 package (5.0 × 6.0 mm)	Requires larger PCB area and higher thermal mass; better suited for high-power, non-space-constrained designs	Select when board area is not limiting and higher power dissipation (>4 W) is needed
DMN3025LFG-7	30 V, R_DS(on) = 0.025 Ω @ 10 V, same ChipFET 1206-8 package, but Q_g = 14.5 nC	Higher gate charge increases driver loss and slows switching vs. SI5424DC-T1-GE3's 11 nC	Select only if Vishay supply constraints exist; expect ~15% higher gate drive power

Compared with Si7157DP-T1-GE3 and DMN3025LFG-7, SI5424DC-T1-GE3 uniquely balances ultra-compact 1206-8 footprint, lowest gate charge (11 nC), and SO-8–class thermal resistance (15 °C/W), making it optimal for thermally dense notebook PC and USB-C PD modules where board area and driver efficiency are co-critical.

Availability

SI5424DC-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC load switching, USB-C power delivery control, DC-DC synchronous rectification, and battery protection circuits requiring stable component supply across high-volume production cycles.

Supply support for SI5424DC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si5424DC product line targets space-constrained, thermally demanding load-switch and power-path applications in portable computing and interface power systems, leveraging TrenchFET® and ChipFET® technologies to maximize silicon utilization per mm².

FAQ

What is the maximum continuous drain current rating for SI5424DC-T1-GE3 at 70 °C case temperature?

The SI5424DC-T1-GE3 is rated for 6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 6.25 W P_D limit at T_C = 25 °C and accounts for thermal resistance and junction temperature constraints. The SI5424DC-T1-GE3 maintains full 6 A capability up to 70 °C case temperature without additional derating.

Does SI5424DC-T1-GE3 support 3.3 V logic-level gate drive?

Yes, SI5424DC-T1-GE3 supports 3.3 V logic-level gate drive: its V_GS(th) range is 1.1–2.3 V, and R_DS(on) is specified at 0.030 Ω with V_GS = 4.5 V - well within the guaranteed turn-on window of 3.3 V ±10%. The SI5424DC-T1-GE3 delivers usable on-resistance and fast switching (t_f = 12–18 ns) under 3.3 V gate bias.

What is the thermal resistance from junction to foot (R_thJF) for SI5424DC-T1-GE3, and why does it matter?

The SI5424DC-T1-GE3 has a typical junction-to-foot thermal resistance (R_thJF) of 15 °C/W, with a maximum of 20 °C/W. This parameter quantifies heat transfer from the silicon die directly to the exposed drain terminals (the "foot"), bypassing the PCB. It matters because it enables accurate thermal modeling of high-current paths and confirms SO-8–class thermal performance in the much smaller 1206-8 footprint - a key advantage of the SI5424DC-T1-GE3.

Can SI5424DC-T1-GE3 be used in synchronous rectification applications?

Yes, SI5424DC-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on) (0.024 Ω), fast switching (t_f = 9–14 ns), and integrated body diode with t_rr = 24–36 ns and V_SD = 0.8–1.2 V. These characteristics allow the SI5424DC-T1-GE3 to replace Schottky diodes in buck converter outputs while reducing conduction loss and improving light-load efficiency.

Is SI5424DC-T1-GE3 compatible with standard 1206 solder reflow profiles?

Yes, SI5424DC-T1-GE3 is compatible with standard lead-free reflow profiles peaking at 260 °C, as documented in Vishay's soldering recommendations. Its ChipFET 1206-8 package is qualified per JEDEC J-STD-020 MSL1, and the device requires no special pre-bake or profile modifications - manual soldering with an iron is not recommended, but automated reflow is fully supported for SI5424DC-T1-GE3.

SI5424DC-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5424DC-T1-GE3 FAQ

1.How can I place an order for SI5424DC-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5424DC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5424DC-T1-GE3 reliable?

The price and inventory of SI5424DC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5424DC-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5424DC-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5424DC-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5424DC-T1-GE3?

SI5424DC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5424DC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5424DC-T1-GE3?

For technical support, including SI5424DC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5424DC-T1-GE3 requirements.

6.How does Aetrix verify that SI5424DC-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5424DC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5424DC-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5424DC-T1-GE3?

All SI5424DC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5424DC-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5424DC-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5424DC-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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