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Vishay Siliconix SI5432DC-T1-GE3
- Part No.:
- SI5432DC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
SI5432DC-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 6A 1206-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,073
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Product details
Overview
SI5432DC-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Power MOSFET in a leadless 1206-8 ChipFET package, delivering RDS(on) = 0.020 Ω at VGS = 4.5 V, 6 A continuous drain current (TJ = 150 °C), and 10 nC total gate charge - optimized for high-efficiency load switching in space-constrained portable electronics.
For engineers reviewing the SI5432DC-T1-GE3 datasheet, SI5432DC-T1-GE3 pinout, SI5432DC-T1-GE3 application, or SI5432DC-T1-GE3 equivalent, this device is selected for low-voltage DC power path control where thermal performance, compact footprint, and guaranteed halogen-free/lead-free compliance are critical design requirements.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate drive voltage - supporting operation down to VGS(th) = 0.6–1.5 V and enabling direct interface with 2.5 V and 3.3 V logic controllers. Its 1206-8 ChipFET package integrates eight terminals: seven drain pads (D) and one gate (G) and source (S) pair, with drain-to-foot thermal resistance of 15 °C/W typical.
The device features a body diode with VSD = 0.8–1.2 V at IS = 6.7 A and trr = 20–40 ns, making it suitable for synchronous rectification and bidirectional current handling in compact DC-DC and battery protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines safe operating range in ≤20 V rail applications. |
| RDS(on) | 0.020 Ω at VGS = 4.5 V - Enables <120 mW conduction loss at 6 A, critical for thermally limited handheld PCBs. |
| ID (continuous) | 6 A at TC = 25 °C - Confirmed steady-state current capability with proper board-level heatsinking. |
| Qg | 10 nC at VGS = 4.5 V - Low gate charge reduces driver power and switching losses in high-frequency load switching. |
| RthJF | 15 °C/W typical - Junction-to-foot thermal resistance enables SO-8–level power dissipation in 80% smaller footprint. |
| VGS(th) | 0.6–1.5 V - Guaranteed turn-on threshold compatible with 1.8 V/2.5 V/3.3 V microcontroller GPIOs without level shifting. |
| Ciss | 1200 pF at VDS = 10 V - Input capacitance impacts gate drive strength requirement and EMI behavior in fast-switching loads. |
Pinout & Package
The SI5432DC-T1-GE3 is housed in a surface-mount 1206-8 ChipFET package (2.95–3.10 mm × 1.825–1.975 mm × 0.10–0.20 mm height), featuring a leadless construction with exposed copper drain terminals on the bottom side for enhanced thermal conduction. No solder fillet is required at the exposed copper tips; reliable interconnection is achieved via bottom-side reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1,2,3,6,7,8 (D) | Drain | Six dedicated drain terminals provide parallel current paths and low-inductance thermal conduction to PCB copper. |
| 4 (G) | Gate | Single gate terminal; requires low-impedance drive due to 1200 pF Ciss and 2.4 Ω internal gate resistance. |
| 5 (S) | Source | Source reference node; connects to system ground or return path; forms body diode anode with drain. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.020 Ω RDS(on) at 4.5 V drive while maintaining robust 20 V breakdown margin. |
| 1206-8 ChipFET package | Same footprint as standard 1206 passives but delivers SO-8–class thermal performance (RthJF = 15 °C/W). |
| Halogen-free & Pb-free | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements for leadless packages. |
| Low VGS(th) range | 0.6–1.5 V threshold ensures reliable turn-on with 1.8 V and higher logic outputs - no external gate driver needed. |
| Body diode trr | 20–40 ns reverse recovery time supports efficient bidirectional current flow in battery protection and USB PD circuits. |
Applications
| Smartphone Power Management | USB-C Port Protection |
|---|---|
|
Use Scenario: Controlling main battery-to-system power path during charging and system wake/sleep transitions. IC Role / Device Role / Timing Role: High-side load switch managing 3.3–4.5 V system rails with fast enable/disable response. Use Value: 6 A rating and 0.020 Ω RDS(on) minimize voltage drop and self-heating during sustained peak loads like camera flash or LTE transmission. |
Use Scenario: Isolating downstream USB-C port circuitry from overvoltage, overcurrent, and reverse polarity events. IC Role / Device Role / Timing Role: Bidirectional protection switch placed between CC logic and VBUS line, leveraging integrated body diode. Use Value: 20 V VDS rating and 0.8–1.2 V VSD support USB PD 3.0 up to 20 V while enabling fast fault response (<50 ns propagation delay implied by td(off) = 25–40 ns). |
| Wireless Earbud Charging Case | Portable Medical Sensor Hub |
|
Use Scenario: Enabling/disabling charging current to individual earbud batteries inside a compact multi-battery case. IC Role / Device Role / Timing Role: Low-side load switch controlling charge path with precise current limiting via external sense resistor. Use Value: 10 nC Qg allows clean, low-EMI switching at 100–500 kHz PWM frequencies used in linear charger control loops. |
Use Scenario: Managing power sequencing between lithium coin cell backup and primary Li-ion supply in wearable diagnostic devices. IC Role / Device Role / Timing Role: Dual-role switch providing both load isolation and reverse-current blocking during battery switchover. Use Value: Guaranteed -55 to +150 °C operating range and 5.2 A continuous source-drain diode current ensure reliability in sterilizable or body-worn environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | 20 V, RDS(on) = 0.022 Ω @ 4.5 V, 8 A ID, same 1206-8 package | Higher current rating but 22 nC Qg - less suitable for high-frequency PWM control | Select when higher continuous current headroom is required and gate drive strength permits higher Qg. |
| DMN2020LFG-7 | 20 V, RDS(on) = 0.021 Ω @ 4.5 V, 6.5 A ID, 1206-8 package, 13 nC Qg | Slightly higher Qg and different thermal profile (RthJA = 90 °C/W typical) | Prefer when dual sourcing is needed and board layout accommodates minor thermal derating. |
Compared with SI5432DC-T1-GE3, Si7157DP-T1-GE3 offers +0.5 A current margin at the cost of +12 nC gate charge, while DMN2020LFG-7 trades 3 nC higher Qg for broader distributor availability - all three maintain identical 1206-8 footprint compatibility but differ in thermal transient response and gate drive sensitivity.
Availability
SI5432DC-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and portable medical sensor hub designs requiring stable component supply, RoHS-compliant packaging, and verified thermal performance in ultra-compact footprints.
Supply support for SI5432DC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and consumer applications.
The SI5432DC-T1-GE3 belongs to Vishay's ChipFET® family - engineered specifically for space-constrained portable electronics where thermal density, low-voltage logic compatibility, and halogen-free compliance are non-negotiable.
FAQ
What is the maximum continuous drain current for SI5432DC-T1-GE3 at 70 °C case temperature?
The SI5432DC-T1-GE3 supports 6 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for the six drain terminals and adherence to recommended pad patterns per Vishay Application Note AN811. Derating is not required between 25 °C and 70 °C case temperature for this part.
Does SI5432DC-T1-GE3 require a gate driver IC when controlled by a 3.3 V microcontroller?
No, SI5432DC-T1-GE3 does not require an external gate driver when driven by a 3.3 V microcontroller. Its VGS(th) range of 0.6–1.5 V and RDS(on) = 0.020 Ω at VGS = 4.5 V ensure full enhancement at 3.3 V, and its 10 nC Qg is readily manageable by typical MCU GPIOs with series gate resistors under 100 Ω.
Can SI5432DC-T1-GE3 be used in a high-side load switch configuration?
Yes, SI5432DC-T1-GE3 can be used in high-side configurations, but requires gate drive voltage ≥ VIN + VGS(th). Since it is an N-channel MOSFET, a charge pump or bootstrap circuit is necessary to elevate the gate above the source (input rail). The SI5432DC-T1-GE3's 12 V VGS rating and low Qg make it compatible with integrated high-side drivers like the TPS229xx series.
What is the thermal resistance from junction to ambient for SI5432DC-T1-GE3 on a standard FR4 board?
On a 1" × 1" double-sided FR4 board, the SI5432DC-T1-GE3 exhibits a typical RthJA of 78 °C/W and a maximum of 95 °C/W, as measured per JEDEC JESD51-2. Performance improves significantly with increased copper area on drain pads - e.g., 111 °C/W on Vishay's 0.6" × 0.5" evaluation board with optimized copper spreading.
Is SI5432DC-T1-GE3 suitable for reverse polarity protection in a 5 V system?
Yes, SI5432DC-T1-GE3 is suitable for reverse polarity protection in 5 V systems when configured as a low-side switch. Its 20 V VDS rating provides ample margin, and its body diode forward voltage (VSD = 0.8–1.2 V at 6.7 A) ensures low-loss conduction during normal operation. For high-side reverse protection, a P-channel alternative would avoid body diode conduction.
SI5432DC-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 6.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 1206-8 ChipFET™
SI5432DC-T1-GE3 FAQ
1.How can I place an order for SI5432DC-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI5432DC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI5432DC-T1-GE3 reliable?
The price and inventory of SI5432DC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5432DC-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI5432DC-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5432DC-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI5432DC-T1-GE3?
SI5432DC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI5432DC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI5432DC-T1-GE3?
For technical support, including SI5432DC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5432DC-T1-GE3 requirements.
6.How does Aetrix verify that SI5432DC-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI5432DC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5432DC-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI5432DC-T1-GE3?
All SI5432DC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5432DC-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI5432DC-T1-GE3 part is unused and in its original packaging.
Return procedure for SI5432DC-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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