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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5440DC-T1-GE3

Name: SI5440DC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5440DC-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5440DC-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5440DC-T1-GE3.pdf

Description:: MOSFET N-CH 30V 6A 1206-8

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Product details

Overview

SI5440DC-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in a leadless 1206-8 ChipFET® package, delivering 6 A continuous drain current at T_J = 150 °C, R_DS(on) = 0.019 Ω at V_GS = 10 V, and Q_g = 9 nC (V_GS = 4.5 V), optimized for high-efficiency load switching in space-constrained notebook PC power rails.

For engineers reviewing the SI5440DC-T1-GE3 datasheet, SI5440DC-T1-GE3 pinout, SI5440DC-T1-GE3 application, or SI5440DC-T1-GE3 equivalent, this page provides verified package mapping, thermal resistance data (R_thJF = 15 °C/W typical), body diode recovery specs (t_rr = 20–40 ns), and validated alternative options for load switch design.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its 1206-8 ChipFET® footprint integrates eight terminals-six dedicated drains, one gate, and one source-with exposed copper drain pads enabling direct thermal conduction to PCB copper.

The device operates with V_GS(th) = 1.2–2.5 V, supports ±20 V gate drive, and features a body diode with V_SD = 0.8–1.2 V at I_S = 7.3 A and Q_rr = 10–20 nC, making it suitable for synchronous rectification and bidirectional current handling in compact DC/DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 3.3 V/5 V/12 V rail load switches
R_DS(on)	0.019 Ω @ V_GS = 10 V - Enables <115 mW conduction loss at 6 A
I_D (continuous)	6 A @ T_C = 25 °C - Sustains full-rated current with minimal heatsinking on 1" × 1" FR4
Q_g	9 nC @ V_GS = 4.5 V - Supports efficient 1–2 MHz PWM switching with low gate driver power
R_thJF	15 °C/W typical - Junction-to-foot thermal path enables SO-8–level power dissipation in 80% smaller footprint
t_rr	20–40 ns - Fast body diode recovery reduces switching losses in buck converters
V_GS(th)	1.2–2.5 V - Compatible with 3.3 V logic-level gate drivers without level shifting

Pinout & Package

The SI5440DC-T1-GE3 uses the 1206-8 ChipFET® package: leadless, 3.0 mm × 1.9 mm outline, with exposed copper drain terminals on bottom surface. Thermal performance relies on PCB copper area under drain pads-not solder fillets at terminal edges.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6, 7, 8	Drain (D)	Six parallel drain terminals maximize current capacity and reduce thermal resistance to PCB
4	Gate (G)	Single gate input with R_g = 3 Ω - minimizes gate ringing in high-dV/dt environments
5	Source (S)	Single source connection - forms return path for load current and gate drive reference

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.019 Ω R_DS(on) in 3.0 mm × 1.9 mm footprint - 40% lower on-resistance than comparable SO-8 MOSFETs at same die size
1206-8 ChipFET® package	Same board area as standard 1206 passive components - eliminates layout redesign when upgrading from resistors/capacitors to power switches
Exposed drain copper pads	Enables direct thermal coupling to inner-layer copper planes via vias - achieves R_thJA = 78 °C/W on 1" × 1" double-sided FR4
Low Q_gd/Q_gs ratio	Q_gd = 2.3 nC, Q_gs = 3.5 nC - improves hard-switching efficiency and reduces Miller-induced shoot-through risk
Body diode with low Q_rr	Q_rr = 10–20 nC - cuts reverse recovery loss in synchronous buck topologies by up to 35% vs. legacy MOSFETs

Applications

Notebook PC Load Switch	USB Power Delivery Switch
Use Scenario: Selectively enable/disable 5 V or 20 V power rails to USB-C ports during hot-plug events. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with <100 ns turn-on delay and <15 ns fall time. Use Value: Prevents inrush current damage and supports USB PD 3.1 programmable power supply (PPS) transitions with minimal voltage droop.	Use Scenario: Isolating battery backup circuits from main system rails during sleep mode in ultrabooks. IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load power gate managing always-on domain power integrity. Use Value: Achieves <1 μA off-state leakage (I_DSS ≤ 1 μA at V_DS = 30 V) to extend battery runtime beyond 14 days in suspend-to-RAM.
DDR Memory VDDQ Switch	Embedded DisplayPort (eDP) Rail Switch
Use Scenario: Dynamic power gating of DDR4/DDR5 VDDQ supply during memory self-refresh cycles. IC Role / Device Role / Timing Role: Fast-turning N-channel switch placed between VRM output and memory VDDQ pins. Use Value: R_DS(on) = 0.019 Ω ensures <12 mV IR drop at 600 mA per byte lane, preserving signal integrity and timing margins.	Use Scenario: Enabling/disabling 3.3 V eDP AUX channel and main link power in thin-client displays. IC Role / Device Role / Timing Role: Compact, thermally robust load switch meeting JEDEC JESD22-A108 reliability requirements for display subsystems. Use Value: 150 °C max junction temperature rating and -55 °C to +150 °C operating range support fanless industrial panel PC deployments.

Notebook PC Load Switch

USB Power Delivery Switch

Use Scenario: Selectively enable/disable 5 V or 20 V power rails to USB-C ports during hot-plug events.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with <100 ns turn-on delay and <15 ns fall time.

Use Value: Prevents inrush current damage and supports USB PD 3.1 programmable power supply (PPS) transitions with minimal voltage droop.

Use Scenario: Isolating battery backup circuits from main system rails during sleep mode in ultrabooks.

IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load power gate managing always-on domain power integrity.

Use Value: Achieves <1 μA off-state leakage (I_DSS ≤ 1 μA at V_DS = 30 V) to extend battery runtime beyond 14 days in suspend-to-RAM.

DDR Memory VDDQ Switch

Embedded DisplayPort (eDP) Rail Switch

Use Scenario: Dynamic power gating of DDR4/DDR5 VDDQ supply during memory self-refresh cycles.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch placed between VRM output and memory VDDQ pins.

Use Value: R_DS(on) = 0.019 Ω ensures <12 mV IR drop at 600 mA per byte lane, preserving signal integrity and timing margins.

Use Scenario: Enabling/disabling 3.3 V eDP AUX channel and main link power in thin-client displays.

IC Role / Device Role / Timing Role: Compact, thermally robust load switch meeting JEDEC JESD22-A108 reliability requirements for display subsystems.

Use Value: 150 °C max junction temperature rating and -55 °C to +150 °C operating range support fanless industrial panel PC deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI5441DC-T1-GE3	Same 1206-8 package, but P-channel; V_DS = -30 V, R_DS(on) = 0.022 Ω @ V_GS = -4.5 V	Requires high-side configuration; no level shifter needed for 3.3 V control, but higher conduction loss at same current	Select for high-side switching where ground-referenced control is impractical
DMN3026LFG-7	1206-8 package, N-channel, R_DS(on) = 0.026 Ω @ V_GS = 4.5 V, Q_g = 11 nC - 37% higher gate charge	Compatible footprint but slower switching; t_f = 18 ns vs. 10–15 ns for SI5440DC-T1-GE3	Acceptable for <500 kHz applications where cost sensitivity outweighs efficiency demands

Compared with SI5440DC-T1-GE3, SI5441DC-T1-GE3 enables simpler high-side control but sacrifices 16% conduction efficiency, while DMN3026LFG-7 offers second-source availability at the cost of 22% higher switching loss in 1 MHz DC/DC designs.

Availability

SI5440DC-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC load switching, USB-C power delivery systems, and DDR memory VDDQ rail management requiring stable component supply across multi-year production cycles.

Supply support for SI5440DC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The SI5440DC-T1-GE3 belongs to Vishay's ChipFET® family-engineered to replace SO-8 and TSOP-6 packages in space-constrained digital power applications while maintaining thermal and electrical performance parity.

FAQ

What is the maximum continuous drain current rating for SI5440DC-T1-GE3 at 70 °C case temperature?

The SI5440DC-T1-GE3 supports 6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating holds under steady-state conditions with proper PCB copper area and is not derated further until T_C exceeds 70 °C, where thermal limits apply per the current derating curve on page 5 of document 69056.

Does SI5440DC-T1-GE3 require special rework procedures due to its leadless construction?

Yes - manual soldering with a soldering iron is not recommended for SI5440DC-T1-GE3, as stated in note f of the datasheet. Rework must use controlled thermal profiles compatible with leadless 1206-8 ChipFET® packages, including preheating, precise peak temperature (≤260 °C), and uniform heating of all eight terminals to ensure void-free solder joints and avoid pad lifting.

Can SI5440DC-T1-GE3 be used in synchronous rectification applications?

Yes - the SI5440DC-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on) (0.019 Ω), fast body diode (t_rr = 20–40 ns), and low Q_rr (10–20 nC). Its gate threshold (1.2–2.5 V) allows direct drive from controller high-side outputs in buck converters operating down to 0.5 V output.

What is the typical junction-to-foot thermal resistance (R_thJF) for SI5440DC-T1-GE3, and why does it matter?

The SI5440DC-T1-GE3 has a typical R_thJF of 15 °C/W, measured from junction to drain foot. This parameter directly determines how efficiently heat transfers from the silicon die into the PCB copper through the six drain terminals - enabling SO-8–class power handling (6.3 W at T_C = 25 °C) in a footprint 80% smaller than SO-8.

Is SI5440DC-T1-GE3 compliant with lead-free and halogen-free requirements?

Yes - SI5440DC-T1-GE3 is explicitly marked as lead (Pb)-free and halogen-free per its ordering information in the Vishay datasheet (S15-2143-Rev. B). It meets JEDEC J-STD-609A Class 1 for moisture sensitivity and complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (document 99912).

SI5440DC-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 9.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 6.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5440DC-T1-GE3 FAQ

1.How can I place an order for SI5440DC-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5440DC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5440DC-T1-GE3 reliable?

The price and inventory of SI5440DC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5440DC-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5440DC-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5440DC-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5440DC-T1-GE3?

SI5440DC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5440DC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5440DC-T1-GE3?

For technical support, including SI5440DC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5440DC-T1-GE3 requirements.

6.How does Aetrix verify that SI5440DC-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5440DC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5440DC-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5440DC-T1-GE3?

All SI5440DC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5440DC-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5440DC-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5440DC-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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