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Vishay Siliconix SI5441BDC-T1-GE3
- Part No.:
- SI5441BDC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
SI5441BDC-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 4.4A 1206-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,417
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Product details
Overview
SI5441BDC-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET in a leadless 1206-8 ChipFET® package, rated for -20 V VDS, 0.045 Ω RDS(on) at -4.5 V VGS, and -6.1 A continuous drain current at TA = 25 °C. It serves as a low-side load switch in space-constrained DC-DC converters and battery protection circuits.
For engineers reviewing the SI5441BDC-T1-GE3 datasheet, SI5441BDC-T1-GE3 pinout, SI5441BDC-T1-GE3 application, or SI5441BDC-T1-GE3 equivalent, key selection criteria include its halogen-free/lead-free compliance, junction-to-foot thermal resistance (17 °C/W typ), gate threshold voltage (-0.6 to -1.4 V), and suitability for 2.5-V logic-level drive in compact power management designs.
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance with fast switching performance: total gate charge is 11.5 nC (typ) at VDS = -10 V, VGS = -4.5 V, enabling efficient operation in high-frequency synchronous buck converters and hot-swap controllers.
Its 1206-8 ChipFET® package integrates seven drain terminals and one source terminal on a 3.05 mm × 1.90 mm footprint, delivering SO-8–comparable thermal performance (RthJA = 85 °C/W typ, steady state) in 80% less board area-critical for ultra-thin portable electronics and wearables.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-voltage battery-side switching |
| RDS(on) @ VGS = -4.5 V | 0.045 Ω - Enables <100 mW conduction loss at 4.4 A, supporting thermally constrained layouts |
| ID (continuous, TA = 25 °C) | -6.1 A - Sustains full-load current in compact 1"×1" FR4 PCBs without forced air |
| Qg (total gate charge) | 11.5 nC - Low drive power requirement compatible with 3.3-V microcontroller GPIOs |
| VGS(th) | -0.6 to -1.4 V - Ensures reliable turn-on with 2.5-V logic, eliminating need for level-shifting |
| RthJF | 17 °C/W (typ) - Direct thermal path from die to PCB copper via exposed drain pads improves transient thermal response |
| Package | 1206-8 ChipFET® - Leadless, surface-mount outline matching standard 1206 passives; no solder fillet required at copper tips |
Pinout & Package
The SI5441BDC-T1-GE3 uses the Vishay 1206-8 ChipFET® package: 3.05 mm × 1.90 mm body, 0.65 mm pitch, with seven drain terminals and one source terminal. The gate is centrally located on the bottom side; all drains are internally connected and thermally optimized for PCB copper spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 6, 7, 8 (D) | Drain | Internally tied to power-switching node; each connects directly to PCB copper pour for thermal and current sharing |
| 4 (G) | Gate | Control input; requires ≤12 V |VGS|; low 10 Ω gate resistance supports clean switching edges |
| 5 (S) | Source | Reference node for gate drive; ties to system ground or negative rail; hosts body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 0.045 Ω RDS(on) in 1206-8 footprint-enabling higher efficiency than comparable SOT-23 or TSOP-6 devices |
| Halogen-free & Pb-free construction | Meets IEC 61249-2-21 and RoHS Directive 2011/65/EU; suitable for consumer and medical end-equipment |
| Low VGS(th) range (-0.6 to -1.4 V) | Guarantees turn-on with 2.5-V logic; eliminates external gate driver in many battery-powered systems |
| Seven parallel drain terminals | Reduces current density per bond; lowers effective RthJF to 17 °C/W and supports >6 A continuous without thermal derating |
| Body diode with VSD = -0.8 to -1.2 V | Enables bidirectional current handling in reverse-polarity protection and OR-ing applications |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion packs for Bluetooth earbuds. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active load disconnect switch controlled by battery fuel gauge IC. Use Value: 0.045 Ω RDS(on) limits voltage drop to <200 mV at 4.4 A, preserving runtime; halogen-free construction meets IEC 62368-1 safety requirements. | Use Scenario: Input power path control in USB-C PD sink adapters accepting 5–20 V input. IC Role / Device Role / Timing Role: High-speed, low-loss reverse-polarity and overvoltage protection switch placed between connector and DC-DC controller. Use Value: 11.5 nC Qg enables <1 µs turn-off, preventing fault propagation during hot-plug events; -20 V rating covers full USB PD 3.0 voltage range. |
| Compact DC-DC Converter High-Side Sync Rectifier | Industrial Sensor Node Power Gating |
Use Scenario: Secondary-side synchronous rectification in isolated 3.3 V/2 A flyback converter for IoT gateway power supply. IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction losses and improve light-load efficiency. Use Value: RDS(on) of 0.052 Ω at -3.6 V VGS cuts rectifier loss by >60% vs. 0.4 V diode, raising efficiency from 82% to 89% at 100 mA load. | Use Scenario: Periodic power gating of MEMS accelerometer and BLE radio in wireless vibration sensor deployed in factory machinery. IC Role / Device Role / Timing Role: Low-quiescent, logic-level-controlled main power switch isolating downstream circuitry during sleep mode. Use Value: VGS(th) ≤ -1.4 V ensures full enhancement at 2.5 V MCU GPIO output; 1.3 W PD rating supports 500 ms wake-up bursts at 6 A peak. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si5401DC-T1-GE3 | -20 V VDS, 0.032 Ω RDS(on) @ -4.5 V, but 1206-8 package with different pinout (G/S/D layout) | Higher current capability (-7.5 A), but gate-source-drain arrangement differs-requires PCB redesign | Select when lower RDS(on) justifies layout change and thermal margin is critical |
| DMN2053LFG-7 | -20 V VDS, 0.048 Ω RDS(on) @ -4.5 V, same 1206-8 footprint but only five drain terminals | Slightly higher RthJA (90 °C/W max) due to fewer drain pads; identical marking and reflow profile | Choose for drop-in replacement where minor thermal penalty is acceptable and second-source assurance is needed |
Compared with SI5441BDC-T1-GE3, Si5401DC-T1-GE3 offers lower on-resistance but demands PCB revision, while DMN2053LFG-7 provides mechanical compatibility with marginal thermal trade-offs-making SI5441BDC-T1-GE3 optimal for new designs prioritizing thermal performance and logic-level drive within fixed layout constraints.
Availability
SI5441BDC-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and compact DC-DC converter designs requiring stable component supply, halogen-free compliance, and high thermal efficiency in minimal board area.
Supply support for SI5441BDC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si54xx family targets space-constrained power management, delivering SO-8 performance in 1206 passive footprints-designed specifically for portable, wearable, and USB-powered electronics where thermal density and logic-level drive are critical.
FAQ
What is the maximum continuous drain current for SI5441BDC-T1-GE3 at 85 °C ambient temperature?
The SI5441BDC-T1-GE3 supports -3.2 A continuous drain current at TA = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the 1206-8 ChipFET® package on standard FR4; using enhanced copper spreading can sustain higher currents by lowering RthJA.
Does SI5441BDC-T1-GE3 require a gate driver when used with a 2.5 V microcontroller output?
No, SI5441BDC-T1-GE3 does not require an external gate driver with a 2.5 V microcontroller output. Its gate threshold voltage range of -0.6 to -1.4 V ensures full enhancement at VGS = -2.5 V, and its 11.5 nC total gate charge allows direct GPIO switching up to ~500 kHz without significant drive loss.
How does the thermal performance of SI5441BDC-T1-GE3 compare to an SO-8 MOSFET?
SI5441BDC-T1-GE3 achieves junction-to-foot thermal resistance of 17 °C/W (typ), matching SO-8 performance, while offering 80% smaller footprint. Its steady-state RthJA is 85 °C/W on standard FR4-slightly higher than SO-8's 68 °C/W-but equalized with PCB copper spreading, making it viable for space-limited thermal designs.
Is SI5441BDC-T1-GE3 suitable for reverse-polarity protection in automotive body electronics?
SI5441BDC-T1-GE3 is not qualified for automotive underhood applications (AEC-Q101) and lacks extended temperature range beyond -55 to +150 °C. However, it is suitable for reverse-polarity protection in non-underhood automotive modules-such as infotainment USB ports or interior lighting-where ambient temperature stays below 85 °C and halogen-free compliance is required.
What is the recommended PCB pad pattern for optimal thermal performance of SI5441BDC-T1-GE3?
Vishay recommends a pad pattern with enlarged copper areas on all seven drain terminals (pins 1,2,3,6,7,8), totaling ≥3.51 mm², plus thermal vias to inner/ground layers. The evaluation board uses 31.1 mm² top-side drain copper with backside spreading, achieving RthJA = 111 °C/W-nearly 30% better than minimum footprint designs.
SI5441BDC-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 1206-8 ChipFET™
SI5441BDC-T1-GE3 FAQ
1.How can I place an order for SI5441BDC-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI5441BDC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI5441BDC-T1-GE3 reliable?
The price and inventory of SI5441BDC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5441BDC-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI5441BDC-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5441BDC-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI5441BDC-T1-GE3?
SI5441BDC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI5441BDC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI5441BDC-T1-GE3?
For technical support, including SI5441BDC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5441BDC-T1-GE3 requirements.
6.How does Aetrix verify that SI5441BDC-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI5441BDC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5441BDC-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI5441BDC-T1-GE3?
All SI5441BDC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5441BDC-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI5441BDC-T1-GE3 part is unused and in its original packaging.
Return procedure for SI5441BDC-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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