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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5445BDC-T1-E3

Name: SI5445BDC-T1-E3
Brand: Vishay Siliconix
SKU: SI5445BDC-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5445BDC-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5445BDC-T1-E3.pdf

Description:: MOSFET P-CH 8V 5.2A 1206-8

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Product details

Overview

SI5445BDC-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® Power MOSFET rated for -8 V drain-source voltage, 0.033 Ω R_DS(on) at -4.5 V gate drive, and -7.1 A continuous drain current at 25 °C ambient. It operates as a low-side load switch in compact DC-DC converters and battery protection circuits.

For engineers reviewing the SI5445BDC-T1-E3 datasheet, SI5445BDC-T1-E3 pinout, SI5445BDC-T1-E3 application, or SI5445BDC-T1-E3 equivalent, key selection criteria include its 1206-8 ChipFET® package, -1.0 V typical gate threshold, 14 nC total gate charge, and guaranteed operation down to -55 °C junction temperature.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with logic-level gate drive compatibility. Its -1.0 V V_GS(th) enables direct interface with 1.8 V and 2.5 V microcontroller GPIOs, while the 0.060 Ω R_DS(on) at -1.8 V V_GS supports ultra-low-voltage power path control.

The 1206-8 ChipFET® package features exposed drain pads for thermal performance (R_thJF = 17 °C/W typical), and its leadless construction eliminates solder wicking concerns-though manual rework is not recommended per Vishay's guidelines.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V maximum - defines safe blocking capability in negative-rail switching applications
R_DS(on)	0.033 Ω at V_GS = -4.5 V - enables <170 mW conduction loss at 5.2 A
I_D (continuous)	-7.1 A at T_A = 25 °C - supports high-current load switching on FR4 PCBs
Q_g	14 nC typical - determines gate drive energy and switching speed in PWM circuits
V_GS(th)	-1.0 V typical - ensures reliable turn-on with 1.8 V logic outputs without level shifting
R_thJF	17 °C/W typical - allows efficient heat transfer from junction to PCB copper via exposed drain pad
T_J range	-55 to 150 °C - qualified for automotive under-hood and industrial control environments

Pinout & Package

The SI5445BDC-T1-E3 is housed in a surface-mount 1206-8 ChipFET® package with three terminals: two drain pads (D) and one source/gate terminal (S/G). The package has no leads; drain terminals are exposed copper on the bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain, Pad 1)	Main current-carrying terminal (high-side referenced)	Exposed copper pad - must be soldered to large PCB copper area for thermal management
D (Drain, Pad 2)	Parallel current path to Pad 1	Shares current and thermal load; both pads electrically connected internally
S/G (Source/Gate)	Combined source and gate connection point	Single top-side terminal - gate signal and source return share this node; requires external gate resistor for controlled turn-on

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at -1.8 V V_GS, eliminating need for gate drivers in 1.8 V/2.5 V systems
TrenchFET® architecture	Delivers 33% lower R_DS(on) vs. planar P-channel MOSFETs of same die size and voltage rating
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and green electronics requirements without performance trade-off
Low Q_gd/Q_g ratio	3.3 nC / 14 nC = 0.24 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk
Integrated body diode	V_SD = -0.8 V at -1.1 A - supports synchronous rectification and reverse-current blocking in buck converters

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch in battery protection IC reference designs. Use Value: 0.043 Ω R_DS(on) at -2.5 V enables <110 mW loss during full-load discharge, preserving battery runtime.	Use Scenario: Hot-swap power control for USB 2.0 downstream ports in portable hubs and docking stations. IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS enable with fast turn-off to meet USB suspend timing. Use Value: 20 ns rise time and 75 ns turn-off delay ensure compliance with USB 2.0 power sequencing requirements.
DC-DC Converter Synchronous Rectifier	Industrial Sensor Node Power Gate
Use Scenario: High-efficiency synchronous rectification in non-isolated buck converters for FPGA core supplies. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode in 3.3 V → 1.2 V conversion stage. Use Value: -1.2 V V_SD forward drop at -1.1 A reduces conduction loss by >60% versus 0.4 V Schottky diode.	Use Scenario: Power gating of low-power sensors (e.g., MEMS accelerometers) in battery-operated IIoT nodes. IC Role / Device Role / Timing Role: Always-on, low-quiescent-current power switch controlled by MCU GPIO. Use Value: -1 µA I_DSS at -8 V ensures <10 nW standby leakage, extending multi-year battery life.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch in battery protection IC reference designs.

Use Value: 0.043 Ω R_DS(on) at -2.5 V enables <110 mW loss during full-load discharge, preserving battery runtime.

Use Scenario: Hot-swap power control for USB 2.0 downstream ports in portable hubs and docking stations.

IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS enable with fast turn-off to meet USB suspend timing.

Use Value: 20 ns rise time and 75 ns turn-off delay ensure compliance with USB 2.0 power sequencing requirements.

DC-DC Converter Synchronous Rectifier

Industrial Sensor Node Power Gate

Use Scenario: High-efficiency synchronous rectification in non-isolated buck converters for FPGA core supplies.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode in 3.3 V → 1.2 V conversion stage.

Use Value: -1.2 V V_SD forward drop at -1.1 A reduces conduction loss by >60% versus 0.4 V Schottky diode.

Use Scenario: Power gating of low-power sensors (e.g., MEMS accelerometers) in battery-operated IIoT nodes.

IC Role / Device Role / Timing Role: Always-on, low-quiescent-current power switch controlled by MCU GPIO.

Use Value: -1 µA I_DSS at -8 V ensures <10 nW standby leakage, extending multi-year battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	-12 V V_DS, 0.022 Ω R_DS(on) at -4.5 V, 8-pin PowerPAK® 1206	Higher voltage rating and lower R_DS(on), but larger footprint and higher gate charge (22 nC)	Preferred when system requires margin above -8 V or needs lower conduction loss at higher currents
DMG2305UVT-7	-20 V V_DS, 0.052 Ω R_DS(on) at -4.5 V, SOT-23 package	Smaller SOT-23 footprint but 4× higher R_DS(on) and no exposed drain pad for thermal relief	Selected where board space is critical and thermal load is below 1 W

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, the SI5445BDC-T1-E3 offers optimal balance of thermal performance (via ChipFET® drain pad), logic-level drive, and compact 1206-8 footprint-making it ideal for space-constrained, thermally demanding 1.8–2.5 V control applications.

Availability

SI5445BDC-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC converter synchronous rectifiers, and industrial sensor node power gates requiring stable component supply and lead-free compliance.

Supply support for SI5445BDC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI5445BDC-T1-E3 belongs to Vishay's TrenchFET® logic-level P-channel MOSFET product line, engineered for high-efficiency, low-voltage power management in portable and space-constrained electronics.

FAQ

What is the maximum gate-source voltage rating for SI5445BDC-T1-E3?

The SI5445BDC-T1-E3 has a ±8 V maximum gate-source voltage rating per Vishay's Absolute Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. Designers should limit gate drive swing to within this range, especially during transient events or hot-plug conditions. The SI5445BDC-T1-E3 gate is not designed for 12 V drive and does not require it due to its -1.0 V typical threshold voltage.

Does SI5445BDC-T1-E3 support 1.8 V logic-level gate drive?

Yes, the SI5445BDC-T1-E3 is specifically characterized for 1.8 V operation: its R_DS(on) is specified as 0.060 Ω at V_GS = -1.8 V and I_D = -1.7 A. This makes the SI5445BDC-T1-E3 suitable for direct interface with 1.8 V microcontrollers without level-shifting circuitry, reducing bill-of-materials cost and board area.

What is the thermal resistance from junction to foot (R_thJF) for SI5445BDC-T1-E3?

The SI5445BDC-T1-E3 has a typical junction-to-foot thermal resistance of 17 °C/W and a maximum of 20 °C/W under steady-state conditions. This parameter reflects heat flow from the silicon die directly to the exposed drain pad on the bottom of the 1206-8 ChipFET® package. Proper PCB copper pour under the SI5445BDC-T1-E3 drain pads is essential to realize this thermal performance.

Is SI5445BDC-T1-E3 halogen-free?

Yes, the SI5445BDC-T1-E3 is halogen-free according to IEC 61249-2-21, as confirmed in the Vishay datasheet revision B. This applies to the Si5445BDC-T1-E3 variant specifically - not just the "-GE3" suffix version. The SI5445BDC-T1-E3 meets environmental compliance requirements for green electronics manufacturing without sacrificing electrical performance.

Can SI5445BDC-T1-E3 be used in linear mode (ohmic region) operation?

The SI5445BDC-T1-E3 is not characterized or rated for sustained linear-mode operation. Its Safe Operating Area (SOA) curve shows pulse-limited capability only - e.g., 1 W for 10 ms at 25 °C ambient. For analog current regulation or active pass element use, a MOSFET explicitly rated for linear operation (with SOA graphs covering DC and long pulses) should be selected instead of the SI5445BDC-T1-E3.

SI5445BDC-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 5.2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5445BDC-T1-E3 FAQ

1.How can I place an order for SI5445BDC-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5445BDC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5445BDC-T1-E3 reliable?

The price and inventory of SI5445BDC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5445BDC-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5445BDC-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5445BDC-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5445BDC-T1-E3?

SI5445BDC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5445BDC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5445BDC-T1-E3?

For technical support, including SI5445BDC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5445BDC-T1-E3 requirements.

6.How does Aetrix verify that SI5445BDC-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5445BDC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5445BDC-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5445BDC-T1-E3?

All SI5445BDC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5445BDC-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5445BDC-T1-E3 part is unused and in its original packaging.

Return procedure for SI5445BDC-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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