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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5446DU-T1-GE3

Name: SI5446DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5446DU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5446DU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5446DU-T1-GE3.pdf

Description:: MOSFET N-CH 30V 25A PPAK

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Product details

Overview

SI5446DU-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® ChipFET® package, delivering R_DS(on) = 0.0100 Ω at V_GS = 4.5 V, 8 A, with 16.6 nC total gate charge and 25 A continuous drain current (T_C = 25 °C). It serves as a high-efficiency load switch in portable DC/DC converters and point-of-load power management.

For engineers reviewing the SI5446DU-T1-GE3 datasheet, SI5446DU-T1-GE3 pinout, SI5446DU-T1-GE3 application, or SI5446DU-T1-GE3 equivalent, key selection criteria include low on-resistance at 1.8–4.5 V gate drive, compact 1.9 mm × 1.9 mm footprint, thermal resistance R_thJC = 3–4 °C/W, and suitability for space-constrained battery-powered systems requiring fast switching and minimal conduction loss.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low R_DS(on) and gate charge trade-offs at logic-level gate drive voltages (1.8 V to 4.5 V). Its PowerPAK ChipFET package features exposed-drain thermal pad and leadless construction, enabling efficient heat transfer from junction to PCB copper.

The device supports bidirectional current flow via its intrinsic body diode (V_SD = 0.8–1.2 V at I_S = 10 A), with reverse recovery time t_rr = 20–40 ns and Q_rr = 10–20 nC - critical for synchronous rectification and high-frequency switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	20 V - Supports input rails up to 18 V in portable power systems with 10% margin
R_DS(on) Max	0.0100 Ω at V_GS = 4.5 V, I_D = 8 A - Enables ≤80 mW conduction loss at 8 A, reducing thermal load
I_D Continuous	25 A at T_C = 25 °C - Sustains high pulsed loads without derating when heatsinked to case
Q_g Typ	16.6 nC at V_GS = 4.5 V - Low gate drive energy enables efficient operation with standard logic-level drivers
R_thJC Max	4 °C/W - Allows direct thermal path from die to PCB copper, supporting >20 W dissipation with minimal ΔT
V_GS(th)	0.4–0.9 V - Ensures reliable turn-on with 1.8 V microcontroller GPIOs without level-shifting
t_r/t_f	15–30 ns / 10–20 ns - Supports >1 MHz switching in buck converters with low switching loss

Pinout & Package

SI5446DU-T1-GE3 is housed in a leadless PowerPAK® ChipFET® single-die package (1.9 mm × 1.9 mm × 0.8 mm), featuring an exposed-drain thermal pad on the bottom side and surface-mount terminals. The package is RoHS-compliant, halogen-free, and optimized for automated reflow assembly per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 6, 7, 8 (D)	Drain	Primary high-current output node; electrically and thermally connected to exposed backside copper pad
3, 4 (S)	Source	Power return path and reference for gate drive; forms low-inductance source loop with adjacent ground planes
5 (G)	Gate	Control terminal requiring <17 nC charge for full enhancement; sensitive to ESD (±8 V rating)

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers lowest R_DS(on) × Q_g figure-of-merit in 20 V class, improving efficiency in 500 kHz–2 MHz DC/DC stages
PowerPAK ChipFET® package	0.8 mm profile and 1.9 mm × 1.9 mm footprint enable ultra-compact layout in space-limited mobile and wearable PCBs
100% R_g tested	Ensures consistent gate resistance (0.28–2.8 Ω), minimizing variation in switching speed and EMI across production lots
Low V_GS(th) range	0.4–0.9 V threshold guarantees robust turn-on with 1.8 V I/O domains, eliminating need for external gate drivers

Applications

Battery-Powered Load Switch	Point-of-Load DC/DC Converter
Use Scenario: Enabling/disabling power to peripheral modules (e.g., GPS, BLE radio) in smartphones and wearables to extend battery life. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V rail with fast turn-on/off (<50 ns) and minimal voltage drop. Use Value: R_DS(on) ≤ 0.0115 Ω at 2.5 V gate drive ensures <115 mV dropout at 10 A, preserving system voltage margins.	Use Scenario: Synchronous rectifier in 1–3 A buck converters powering SoCs or FPGAs in portable industrial sensors. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology operating at 1–2 MHz with tight duty-cycle control. Use Value: Q_g = 16.6 nC and t_f ≤ 20 ns reduce switching loss and improve light-load efficiency over discrete alternatives.
Portable PA Power Switch	USB-C Power Delivery Sink
Use Scenario: RF power amplifier bias switching in LTE/Wi-Fi front-end modules where rapid enable/disable reduces idle current. IC Role / Device Role / Timing Role: Logic-level controlled high-current switch placed between battery and PA supply rail. Use Value: V_GS(th) ≤ 0.9 V allows direct interface with baseband processor GPIOs, eliminating level-shifters and saving BOM cost.	Use Scenario: Input power switch in USB-C PD sink designs managing 5–20 V input with overcurrent protection coordination. IC Role / Device Role / Timing Role: Primary pass element in hot-swap circuitry, handling inrush limiting and fault isolation. Use Value: 25 A continuous rating and 60 A pulsed capability support 100 W PD3.1 applications with headroom for transient surges.

Battery-Powered Load Switch

Point-of-Load DC/DC Converter

Use Scenario: Enabling/disabling power to peripheral modules (e.g., GPS, BLE radio) in smartphones and wearables to extend battery life.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V rail with fast turn-on/off (<50 ns) and minimal voltage drop.

Use Value: R_DS(on) ≤ 0.0115 Ω at 2.5 V gate drive ensures <115 mV dropout at 10 A, preserving system voltage margins.

Use Scenario: Synchronous rectifier in 1–3 A buck converters powering SoCs or FPGAs in portable industrial sensors.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology operating at 1–2 MHz with tight duty-cycle control.

Use Value: Q_g = 16.6 nC and t_f ≤ 20 ns reduce switching loss and improve light-load efficiency over discrete alternatives.

Portable PA Power Switch

USB-C Power Delivery Sink

Use Scenario: RF power amplifier bias switching in LTE/Wi-Fi front-end modules where rapid enable/disable reduces idle current.

IC Role / Device Role / Timing Role: Logic-level controlled high-current switch placed between battery and PA supply rail.

Use Value: V_GS(th) ≤ 0.9 V allows direct interface with baseband processor GPIOs, eliminating level-shifters and saving BOM cost.

Use Scenario: Input power switch in USB-C PD sink designs managing 5–20 V input with overcurrent protection coordination.

IC Role / Device Role / Timing Role: Primary pass element in hot-swap circuitry, handling inrush limiting and fault isolation.

Use Value: 25 A continuous rating and 60 A pulsed capability support 100 W PD3.1 applications with headroom for transient surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI5442DU-T1-GE3	Identical PowerPAK ChipFET package and pinout; R_DS(on) = 0.0100 Ω at V_GS = 4.5 V, same Q_g = 16.6 nC	No functional difference; documented as direct replacement in Vishay documentation	Select when SI5446DU-T1-GE3 is unavailable - identical thermal and electrical behavior
DMN2020LFG-7	Same 20 V rating and 1.9 mm × 1.9 mm package but higher R_DS(on) = 0.012 Ω at 4.5 V and Q_g = 19.5 nC	Marginally higher conduction and switching loss; suitable where <3% efficiency delta is acceptable	Choose for multi-source strategy if SI5446DU-T1-GE3 lead times exceed requirements

Compared with SI5446DU-T1-GE3, SI5442DU-T1-GE3 offers identical performance and drop-in compatibility, while DMN2020LFG-7 trades 20% higher R_DS(on) and 17% higher Q_g for broader distributor availability - making it viable only when efficiency targets permit minor loss increase.

Availability

SI5446DU-T1-GE3 is available at Aetrix Electronics and suitable for battery-powered load switching, point-of-load DC/DC conversion, and USB-C power delivery sink applications requiring stable component supply and long-term manufacturability.

Supply support for SI5446DU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI54xxDU series targets high-density portable power management, designed specifically for logic-level switching in space-constrained battery-operated devices where thermal performance and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for SI5446DU-T1-GE3 at 70 °C case temperature?

The SI5446DU-T1-GE3 supports 25 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is not derated relative to the 25 °C value - reflecting the robust thermal design of the PowerPAK ChipFET package. Always verify actual board-level thermal performance using R_thJA = 34–40 °C/W under your layout conditions before finalizing the SI5446DU-T1-GE3 design-in.

Does SI5446DU-T1-GE3 support 1.8 V gate drive for full enhancement?

Yes, the SI5446DU-T1-GE3 is fully characterized down to 1.8 V gate drive, with R_DS(on) = 0.0135 Ω max at V_GS = 1.8 V and I_D = 4 A. Its V_GS(th) range of 0.4–0.9 V ensures reliable turn-on with 1.8 V microcontroller I/Os. This makes the SI5446DU-T1-GE3 suitable for direct GPIO control without level-shifting circuitry in ultra-low-voltage portable systems.

What is the thermal resistance from junction to case (R_thJC) for SI5446DU-T1-GE3?

The SI5446DU-T1-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 4 °C/W under steady-state conditions, with a typical value of 3 °C/W. This low value is enabled by the exposed-drain thermal pad in the PowerPAK ChipFET package, which provides a direct thermal path from the silicon die to the PCB copper. For optimal thermal performance, the SI5446DU-T1-GE3 requires adequate solder coverage on the drain pad per Vishay's recommended land pattern.

Can SI5446DU-T1-GE3 be used as a synchronous rectifier in a buck converter?

Yes, the SI5446DU-T1-GE3 is well-suited as a low-side synchronous rectifier in buck converters due to its low R_DS(on) (0.0100 Ω at 4.5 V), fast switching (t_f ≤ 20 ns), and low Q_g (16.6 nC). Its body diode exhibits t_rr = 20–40 ns and Q_rr = 10–20 nC, minimizing reverse recovery loss. When paired with a compatible high-side switch, the SI5446DU-T1-GE3 enables high-efficiency operation up to 2 MHz in compact DC/DC modules.

Is SI5446DU-T1-GE3 RoHS-compliant and halogen-free?

Yes, the SI5446DU-T1-GE3 is both RoHS-compliant and halogen-free, as confirmed by the "-GE3" suffix in the ordering code and Vishay's material declaration documentation (Doc. #99912). It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and is qualified for lead-free reflow soldering up to 260 °C peak temperature. This makes the SI5446DU-T1-GE3 suitable for environmentally regulated industrial and consumer applications.

SI5446DU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 1610 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFet Single

SI5446DU-T1-GE3 FAQ

1.How can I place an order for SI5446DU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5446DU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5446DU-T1-GE3 reliable?

The price and inventory of SI5446DU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5446DU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5446DU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5446DU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5446DU-T1-GE3?

SI5446DU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5446DU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5446DU-T1-GE3?

For technical support, including SI5446DU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5446DU-T1-GE3 requirements.

6.How does Aetrix verify that SI5446DU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5446DU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5446DU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5446DU-T1-GE3?

All SI5446DU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5446DU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5446DU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5446DU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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