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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5448DU-T1-GE3

Name: SI5448DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5448DU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5448DU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5448DU-T1-GE3.pdf

Description:: MOSFET N-CH 40V 25A PPAK

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Product details

Overview

SI5448DU-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in a thermally enhanced PowerPAK ChipFET package, delivering R_DS(on) = 7.75 mΩ at V_GS = 10 V and 9.47 mΩ at V_GS = 4.5 V, with 12.6 nC typical total gate charge and 25 A continuous drain current (T_C = 25 °C), optimized for high-efficiency DC/DC converters and synchronous rectification.

For engineers reviewing the SI5448DU-T1-GE3 datasheet, SI5448DU-T1-GE3 pinout, SI5448DU-T1-GE3 application, or SI5448DU-T1-GE3 equivalent, this page provides verified package dimensions, validated thermal resistance (R_thJC = 4 °C/W), confirmed body diode characteristics (V_SD = 0.8–1.2 V at I_S = 13 A), and real-world SOA boundaries per Vishay Document 76149 Rev. A.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve 56 % lower R_DS(on) versus prior generations while maintaining robust UIS and 100 % R_g testing. Its PowerPAK ChipFET package features exposed-drain copper pads on the bottom side for low-inductance, high-current conduction paths and direct thermal coupling to the PCB.

The device supports logic-level drive (V_GS(th) = 1.0–2.5 V) and exhibits fast switching performance: t_d(on) = 10 ns, t_r = 35 ns, t_d(off) = 15 ns, and t_f = 10 ns at V_GEN = 10 V, enabling high-frequency operation in compact power stages without sacrificing efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operating range in buck converters and load switches up to 36 V input rails.
R_DS(on) @ 10 V	7.75 mΩ max - Enables <1.2 W conduction loss at 15 A, critical for thermally constrained DC/DC modules.
R_DS(on) @ 4.5 V	9.47 mΩ max - Ensures stable on-state performance with 5 V or 4.5 V gate drivers, eliminating need for level-shifting in many industrial controllers.
Q_g	12.6 nC typ - Low gate charge reduces driver power demand and switching losses in 500 kHz–1 MHz applications.
I_D (continuous)	25 A @ T_C = 25 °C - Supports high-current motor drive and battery management paths without external heatsinking when mounted on 1" × 1" FR4.
R_thJC	4 °C/W max - Enables efficient heat transfer from junction to case via exposed drain pad, essential for sustained 20+ W dissipation in compact layouts.
V_SD	0.8–1.2 V @ I_S = 13 A - Low forward voltage of integrated body diode improves light-load efficiency in synchronous rectifier topologies.

Pinout & Package

SI5448DU-T1-GE3 uses the leadless PowerPAK ChipFET single-package (S16-2343 outline), measuring 3.0 mm × 1.9 mm × 0.8 mm with a compact 6.09 mm² footprint and exposed-drain thermal pad on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V gate drive; low R_g (0.3–3 Ω) minimizes Miller-induced oscillation risk.
5 (S)	Source	Reference node for gate drive and current sensing; tied to PCB ground plane for low-noise feedback paths.
2,3,4,6,7,8 (D)	Drain	High-current output path; all six pins are internally connected to the exposed bottom copper pad for parallel conduction and thermal spreading.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 56 % lower R_DS(on) vs. Gen III, directly reducing conduction losses in high-current power stages.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Thermally enhanced PowerPAK ChipFET	0.8 mm profile and exposed drain pad enable >2× better thermal performance than comparable SO-8 MOSFETs.
Low Q_gd/Q_g ratio	Q_gd = 2.5 nC / Q_g = 12.6 nC → ~20 % - Reduces Miller plateau duration, improving hard-switching EMI behavior.
Body diode t_rr	33–50 ns - Fast reverse recovery supports synchronous rectification in 300 kHz–1 MHz converters without shoot-through risk.

Applications

DC/DC Converters	Motor Drive Control
Use Scenario: High-density 12 V input to 3.3 V/5 V point-of-load converter in telecom base station power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck topology, replacing Schottky diode to improve full-load efficiency by ≥3 %. Use Value: 7.75 mΩ R_DS(on) and 0.8 V V_SD minimize both conduction and reverse-recovery losses across 0–20 A load range.	Use Scenario: H-bridge low-side switch for 24 V brushed DC motor control in industrial actuators. IC Role / Device Role / Timing Role: High-current, logic-level-driven power switch with fast turn-off (t_f = 10 ns) to prevent shoot-through during PWM commutation. Use Value: 25 A continuous rating and 100 A pulsed capability support peak torque demands without derating at 70 °C ambient.
Battery Management	Load Switch
Use Scenario: Protection FET in 3-cell Li-ion pack (max 12.6 V) for overcurrent and short-circuit cutoff. IC Role / Device Role / Timing Role: Primary current path switch with low R_DS(on) to minimize voltage drop during charging/discharging cycles. Use Value: 9.47 mΩ at 4.5 V gate drive ensures reliable turn-on using standard battery monitor IC outputs without external boost.	Use Scenario: Hot-swap and inrush current limiting for 5 V/3.3 V system rails in embedded computing modules. IC Role / Device Role / Timing Role: Controlled power rail enable switch with fast, predictable turn-on (t_d(on) = 15 ns @ 4.5 V) to meet sequencing requirements. Use Value: 40 V V_DS rating provides 2× margin over nominal rail voltage, preventing avalanche failure during transients.

DC/DC Converters

Motor Drive Control

Use Scenario: High-density 12 V input to 3.3 V/5 V point-of-load converter in telecom base station power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck topology, replacing Schottky diode to improve full-load efficiency by ≥3 %.

Use Value: 7.75 mΩ R_DS(on) and 0.8 V V_SD minimize both conduction and reverse-recovery losses across 0–20 A load range.

Use Scenario: H-bridge low-side switch for 24 V brushed DC motor control in industrial actuators.

IC Role / Device Role / Timing Role: High-current, logic-level-driven power switch with fast turn-off (t_f = 10 ns) to prevent shoot-through during PWM commutation.

Use Value: 25 A continuous rating and 100 A pulsed capability support peak torque demands without derating at 70 °C ambient.

Battery Management

Load Switch

Use Scenario: Protection FET in 3-cell Li-ion pack (max 12.6 V) for overcurrent and short-circuit cutoff.

IC Role / Device Role / Timing Role: Primary current path switch with low R_DS(on) to minimize voltage drop during charging/discharging cycles.

Use Value: 9.47 mΩ at 4.5 V gate drive ensures reliable turn-on using standard battery monitor IC outputs without external boost.

Use Scenario: Hot-swap and inrush current limiting for 5 V/3.3 V system rails in embedded computing modules.

IC Role / Device Role / Timing Role: Controlled power rail enable switch with fast, predictable turn-on (t_d(on) = 15 ns @ 4.5 V) to meet sequencing requirements.

Use Value: 40 V V_DS rating provides 2× margin over nominal rail voltage, preventing avalanche failure during transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 8.5 mΩ @ 10 V; same PowerPAK ChipFET 3.0 × 1.9 mm package; higher Q_g = 15.5 nC.	Marginally higher conduction loss but identical footprint and thermal interface; suitable where gate drive strength exceeds 12.6 nC requirement.	Select when existing layout re-use is mandatory and gate driver can support +23 % Q_g.
IRLML6344TRPBF	R_DS(on) = 11.5 mΩ @ 4.5 V; Micro3 (SOT-23) package; R_thJA = 150 °C/W - significantly higher thermal resistance.	Limited to ≤3 A continuous due to package thermal limits; not viable for 15–25 A applications without major board redesign.	Only consider for space-constrained, low-current (<5 A) replacements where thermal performance is secondary.

Compared with SI5448DU-T1-GE3, Si7157DP-T1-GE3 offers identical mechanical compatibility but trades off 10 % higher R_DS(on) for broader gate drive margin, whereas IRLML6344TRPBF sacrifices >70 % current capacity and thermal performance for ultra-small size - making SI5448DU-T1-GE3 the optimal balance for mid-power industrial switching.

Availability

SI5448DU-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drive control, and battery management systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for SI5448DU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SI5448DU-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK ChipFET family, engineered specifically for high-current, surface-mount power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum continuous drain current rating for SI5448DU-T1-GE3 at 70 °C case temperature?

The SI5448DU-T1-GE3 supports 25 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table of Vishay Document 76149 Rev. A. This rating assumes proper PCB copper area and thermal vias beneath the exposed drain pad to maintain junction temperature ≤150 °C under steady-state conditions.

Does SI5448DU-T1-GE3 have a qualified AEC-Q101 rating for automotive use?

No - SI5448DU-T1-GE3 is not AEC-Q101 qualified. Vishay's official documentation (Document 76149) lists it for industrial, computing, and telecom applications only. For automotive-grade alternatives, consult Vishay's AQ-series PowerPAK devices such as AQSI5448DU-T1-GE3, which undergo additional stress testing and lot traceability.

What is the gate threshold voltage range for SI5448DU-T1-GE3, and how does it affect 3.3 V logic drive?

The SI5448DU-T1-GE3 has a V_GS(th) range of 1.0–2.5 V at I_D = 250 μA. While it will turn on with 3.3 V gate drive, R_DS(on) at that voltage is not characterized - the datasheet specifies R_DS(on) only at V_GS = 4.5 V and 10 V. For guaranteed performance, use ≥4.5 V drive or verify conduction loss empirically at 3.3 V.

Can SI5448DU-T1-GE3 be used in parallel configurations, and what layout considerations apply?

Yes - SI5448DU-T1-GE3 supports paralleling due to its positive R_DS(on) temperature coefficient. To ensure current sharing, match gate drive loop inductance (use symmetric, short traces), place Kelvin source connections close to the source pad, and provide equal thermal paths via identical copper area and thermal vias under each device's drain pad.

What is the recommended solder profile for SI5448DU-T1-GE3, and why is manual rework discouraged?

Vishay specifies a peak reflow temperature of 260 °C for SI5448DU-T1-GE3 (Document 76149, Note d). Manual soldering with an iron is discouraged because the PowerPAK ChipFET is leadless with exposed copper on the bottom; uneven heating risks voiding the solder joint or delaminating the die attach, and no solder fillet is required or guaranteed at the copper tip.

SI5448DU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 4.5 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 1765 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFet Single

SI5448DU-T1-GE3 FAQ

1.How can I place an order for SI5448DU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5448DU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5448DU-T1-GE3 reliable?

The price and inventory of SI5448DU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5448DU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5448DU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5448DU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5448DU-T1-GE3?

SI5448DU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5448DU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5448DU-T1-GE3?

For technical support, including SI5448DU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5448DU-T1-GE3 requirements.

6.How does Aetrix verify that SI5448DU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5448DU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5448DU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5448DU-T1-GE3?

All SI5448DU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5448DU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5448DU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5448DU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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