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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5473DC-T1-E3

Name: SI5473DC-T1-E3
Brand: Vishay Siliconix
SKU: SI5473DC-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5473DC-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5473DC-T1-E3.pdf

Description:: MOSFET P-CH 12V 5.9A 1206-8

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Product details

Overview

SI5473DC-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -12 V drain-source voltage, with R_DS(on) = 0.027 Ω at V_GS = -4.5 V and continuous drain current of -8.1 A at T_A = 25 °C. It serves as a low-side load switch in portable battery-powered systems requiring compact footprint and low conduction loss.

For engineers reviewing the SI5473DC-T1-E3 datasheet, SI5473DC-T1-E3 pinout, SI5473DC-T1-E3 application, or SI5473DC-T1-E3 equivalent, key selection criteria include verified R_DS(on) at low gate drive (-1.8 V to -4.5 V), thermal resistance R_thJA (max 95 °C/W), ChipFET® package compatibility, and guaranteed gate threshold voltage range (-0.40 V to -1.0 V).

Technical Context

This device operates as a single P-channel power switch with depletion-free gate control, optimized for synchronous rectification and reverse-polarity protection in space-constrained DC-DC and battery management circuits. Its trench-based silicon structure delivers low Q_g (21–32 nC) and fast switching (t_d(on) ≤ 40 ns, t_f ≤ 135 ns) under low-voltage gate drive.

The ChipFET® package enables high power density with exposed drain pad for thermal conduction to PCB copper. Junction-to-foot thermal resistance (R_thJF) is specified at 15–20 °C/W, supporting efficient heat transfer without external heatsinking in handheld applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for battery-switching applications up to 12 V nominal systems
R_DS(on)	0.027 Ω @ V_GS = -4.5 V - Enables <150 mW conduction loss at 8 A load current
I_D (continuous)	-8.1 A @ T_A = 25 °C - Supports high-current load switching on FR4 PCBs without forced airflow
V_GS(th)	-0.40 to -1.0 V - Ensures reliable turn-on with 1.8 V logic-level gate drivers
Q_g	21–32 nC - Low gate charge reduces driver power requirement and switching losses
R_thJA	Max 95 °C/W - Limits junction temperature rise to <100 °C under 1.3 W steady-state dissipation
V_SD	-0.8 to -1.2 V @ I_S = -1.1 A - Body diode forward voltage suitable for reverse-current clamping

Pinout & Package

SI5473DC-T1-E3 uses the 1206-8 ChipFET® package: leadless, surface-mount, with exposed drain pad on bottom side. Package dimensions are 3.05 mm × 1.65 mm × 0.85 mm (L × W × H), compliant with JEDEC MO-220 standards.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (x7 terminals)	All seven drain pads connect internally to common drain node; provide low-inductance, high-current path and thermal conduction to PCB
Source (S)	Current return path and reference node	Single source terminal; defines channel reference; must be routed with low impedance for stable gate control
Gate (G)	Control input for channel modulation	High-impedance MOS gate; requires ESD-safe handling and layout isolation from noisy traces

Key Features

Feature	Design Value
TrenchFET® technology	Enables ultra-low R_DS(on) at low V_GS, improving efficiency in 1.8 V–4.5 V gate-drive systems
ChipFET® package	Leadless construction with exposed drain pad delivers 2× thermal performance vs. standard SO-8 in same footprint
Halogen-free construction	Complies with IEC 61249-2-21; supports RoHS-compliant manufacturing without brominated flame retardants
Low gate threshold spread	V_GS(th) tolerance of ±0.3 V ensures consistent turn-on behavior across production lots and temperature

Applications

Smartphone Power Management	USB-C Port Protection
Use Scenario: Controlling main battery connection to system rail during sleep/wake transitions and overvoltage events. IC Role / Device Role / Timing Role: P-channel load switch providing reverse-polarity and short-circuit protection with fast turn-off (<220 ns). Use Value: R_DS(on) ≤ 0.045 Ω at V_GS = -1.8 V ensures <700 mW loss at 4 A peak load, extending battery runtime.	Use Scenario: Isolating downstream USB-C PD controller and data lines from upstream power source during fault conditions. IC Role / Device Role / Timing Role: High-speed enable-controlled switch enabling/disabling V_BUS path with <40 ns turn-on delay. Use Value: Low Q_g (21–32 nC) allows direct drive from 3.3 V microcontroller GPIO without buffer, reducing BOM count.
Wireless Earbud Charging Case	Medical Wearable Battery Switch
Use Scenario: Managing charging current flow between case battery and earbud battery while preventing backfeed and thermal runaway. IC Role / Device Role / Timing Role: Bidirectional load switch operating in both forward and reverse conduction modes via body diode. Use Value: V_SD = -0.8 to -1.2 V ensures <1.2 V forward drop during reverse-current events, limiting self-heating during trickle-charge scenarios.	Use Scenario: Enabling/disabling power to sensor subsystems during patient monitoring to meet strict 24-hour battery life targets. IC Role / Device Role / Timing Role: Low-quiescent-current load switch with guaranteed turn-on at 1.8 V logic levels. Use Value: Gate threshold range (-0.40 to -1.0 V) guarantees activation even with aged or low-V_CC microcontrollers, improving field reliability.

Smartphone Power Management

USB-C Port Protection

Use Scenario: Controlling main battery connection to system rail during sleep/wake transitions and overvoltage events.

IC Role / Device Role / Timing Role: P-channel load switch providing reverse-polarity and short-circuit protection with fast turn-off (<220 ns).

Use Value: R_DS(on) ≤ 0.045 Ω at V_GS = -1.8 V ensures <700 mW loss at 4 A peak load, extending battery runtime.

Use Scenario: Isolating downstream USB-C PD controller and data lines from upstream power source during fault conditions.

IC Role / Device Role / Timing Role: High-speed enable-controlled switch enabling/disabling V_BUS path with <40 ns turn-on delay.

Use Value: Low Q_g (21–32 nC) allows direct drive from 3.3 V microcontroller GPIO without buffer, reducing BOM count.

Wireless Earbud Charging Case

Medical Wearable Battery Switch

Use Scenario: Managing charging current flow between case battery and earbud battery while preventing backfeed and thermal runaway.

IC Role / Device Role / Timing Role: Bidirectional load switch operating in both forward and reverse conduction modes via body diode.

Use Value: V_SD = -0.8 to -1.2 V ensures <1.2 V forward drop during reverse-current events, limiting self-heating during trickle-charge scenarios.

Use Scenario: Enabling/disabling power to sensor subsystems during patient monitoring to meet strict 24-hour battery life targets.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch with guaranteed turn-on at 1.8 V logic levels.

Use Value: Gate threshold range (-0.40 to -1.0 V) guarantees activation even with aged or low-V_CC microcontrollers, improving field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.022 Ω @ -4.5 V; higher I_D = -12 A; larger 2012-8 ChipFET® package	Requires larger PCB area; better suited for 5 V rail switching with higher current margin	Select when >10 A continuous current or lower R_DS(on) is required; verify board space and thermal pad layout compatibility
DMN2053LFG-7	R_DS(on) = 0.035 Ω @ -4.5 V; SOT-23-6 package; higher R_thJA = 150 °C/W	Limited to <3 A continuous due to thermal constraints; not recommended for >5 A sustained loads	Choose only for space-constrained prototypes where 1206-8 footprint is unavailable; derate current by 40 % for same ambient conditions

Compared with SI5473DC-T1-E3, Si7157DP-T1-GE3 offers higher current capacity but demands more PCB real estate, while DMN2053LFG-7 trades thermal performance for smaller size-making SI5473DC-T1-E3 the optimal balance of R_DS(on), thermal capability, and footprint for portable 12 V battery switches.

Availability

SI5473DC-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and medical wearable battery switching requiring stable component supply and full traceability.

Supply support for SI5473DC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si5473DC product line targets portable electronics load switching, delivering optimized P-channel MOSFETs with low-voltage gate drive compatibility and ChipFET® thermal performance for battery-powered devices.

FAQ

What is the maximum continuous drain current rating for SI5473DC-T1-E3 at 85 °C ambient temperature?

The SI5473DC-T1-E3 supports -4.3 A continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the 1206-8 ChipFET® package on standard FR4 PCBs. Designers should verify PCB copper area and airflow to sustain this current without exceeding the 150 °C maximum junction temperature. The SI5473DC-T1-E3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" with footnote "a" referencing surface-mounted 1" × 1" FR4 board conditions.

Does SI5473DC-T1-E3 support gate drive from a 1.8 V microcontroller output?

Yes, SI5473DC-T1-E3 is fully compatible with 1.8 V logic-level gate drive: its gate threshold voltage V_GS(th) ranges from -0.40 V to -1.0 V, and R_DS(on) is specified at -1.8 V (0.045 Ω). This ensures robust turn-on with margin even under worst-case process and temperature variation. The SI5473DC-T1-E3 datasheet explicitly lists this condition in the Product Summary and Specifications tables, confirming usability in modern ultra-low-power portable systems.

What is the thermal resistance from junction to ambient (R_thJA) for SI5473DC-T1-E3 under steady-state conditions?

The steady-state junction-to-ambient thermal resistance R_thJA for SI5473DC-T1-E3 is 80 °C/W (typical) and 95 °C/W (maximum), per the Thermal Resistance Ratings table. These values assume surface mounting on a 1" × 1" FR4 board with no additional heatsinking. The SI5473DC-T1-E3's ChipFET® package relies on PCB copper for thermal dissipation, so actual R_thJA improves significantly with increased copper area or internal layers.

Is SI5473DC-T1-E3 halogen-free and RoHS-compliant?

Yes, SI5473DC-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant (lead-free). The ordering information explicitly states "(Lead (Pb)-free)", and the Features section confirms halogen-free status. Vishay's documentation (Document Number 72261, Rev. B) lists these environmental attributes as certified characteristics-not optional variants-making SI5473DC-T1-E3 suitable for regulated consumer and medical markets requiring full material compliance.

Can SI5473DC-T1-E3 be used in reverse-current protection applications?

Yes, SI5473DC-T1-E3 supports reverse-current protection via its intrinsic body diode, which has a forward voltage V_SD of -0.8 to -1.2 V at -1.1 A. When configured as a high-side switch with source tied to battery positive, the body diode blocks reverse current flow from load to source. The SI5473DC-T1-E3 datasheet includes Safe Operating Area curves and body diode characterization confirming operation in this mode under defined pulse and thermal limits.

SI5473DC-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 5.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 5.9A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5473DC-T1-E3 FAQ

1.How can I place an order for SI5473DC-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5473DC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5473DC-T1-E3 reliable?

The price and inventory of SI5473DC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5473DC-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5473DC-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5473DC-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5473DC-T1-E3?

SI5473DC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5473DC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5473DC-T1-E3?

For technical support, including SI5473DC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5473DC-T1-E3 requirements.

6.How does Aetrix verify that SI5473DC-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5473DC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5473DC-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5473DC-T1-E3?

All SI5473DC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5473DC-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5473DC-T1-E3 part is unused and in its original packaging.

Return procedure for SI5473DC-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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