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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5475BDC-T1-E3

Name: SI5475BDC-T1-E3
Brand: Vishay Siliconix
SKU: SI5475BDC-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5475BDC-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5475BDC-T1-E3.pdf

Description:: MOSFET P-CH 12V 6A 1206-8

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Product details

Overview

SI5475BDC-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -12 V drain-source voltage, 0.028 Ω R_DS(on) at -4.5 V gate drive, and -6 A continuous drain current at T_C = 25 °C, designed for high-efficiency load switching in space-constrained DC-DC converters and battery protection circuits.

For engineers reviewing the SI5475BDC-T1-E3 datasheet, SI5475BDC-T1-E3 pinout, SI5475BDC-T1-E3 application, or SI5475BDC-T1-E3 equivalent, key selection criteria include its 1.8 V logic-level gate threshold, low 15.5 nC total gate charge, 1206-8 ChipFET leadless package, and verified performance under -55 to +150 °C junction temperature range.

Technical Context

This device implements a trench-gate, planar-cell P-channel MOSFET architecture optimized for low R_DS(on) at low gate voltages. It delivers stable on-resistance down to -1.8 V V_GS, with guaranteed V_GS(th) between -0.45 V and -1.0 V and minimal temperature coefficient of -7 mV/°C for V_DS.

Dynamic behavior is characterized by 10–15 ns turn-on delay and 70–105 ns fall time under -4.5 V gate drive, supported by C_iss = 1400 pF and C_rss = 260 pF. Its body diode exhibits V_SD = -0.9 to -1.2 V at -6.2 A and t_rr = 45–70 ns, enabling synchronous rectification in buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for low-voltage P-channel switching in ≤12 V systems
R_DS(on)	0.028 Ω at V_GS = -4.5 V - Enables <170 mW conduction loss at 6 A, critical for thermally constrained PCBs
I_D (continuous)	-6 A at T_C = 25 °C - Package-limited current rating suitable for compact load switches and OR-ing circuits
Q_g	15.5 nC at V_GS = -4.5 V - Low gate charge reduces driver power and switching losses in high-frequency operation
V_GS(th)	-0.45 to -1.0 V - Ensures reliable turn-on with 1.8 V logic controllers without level-shifting circuitry
R_thJA	40–50 °C/W - Thermal resistance confirms need for thermal relief pads or copper pour in 1"×1" FR4 layouts
t_rr	45–70 ns - Fast body diode recovery supports efficient synchronous operation in buck regulators

Pinout & Package

The SI5475BDC-T1-E3 uses the 1206-8 ChipFET leadless surface-mount package (3.2 mm × 1.6 mm × 0.55 mm), with exposed drain terminals on the bottom side for thermal conduction. The package has no leads; solder interconnection relies on bottom-side copper pads only.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Exposed copper pad on bottom - must be connected to large copper area for thermal management and current handling
Gate (G)	Control input for channel conduction	Top-side metallized pad - requires low-inductance routing to minimize switching noise and ringing
Source (S)	Reference node for gate drive and current return	Top-side metallized pad - forms common reference for gate-source voltage and body diode cathode

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.028 Ω R_DS(on) at -4.5 V while maintaining robust avalanche capability and low gate charge
1.8 V logic-compatible gate	Guaranteed turn-on with standard 1.8 V microcontrollers or PMIC outputs - eliminates external level shifters
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and green manufacturing requirements for consumer and industrial end products
Low thermal resistance (R_thJF)	15–20 °C/W junction-to-foot enables >4 W dissipation with minimal board-level heatsinking
Optimized body diode	45–70 ns reverse recovery time and 27–42 nC Q_rr reduce switching losses in synchronous buck and OR-ing applications

Applications

Battery Protection Circuit	Load Switch for Portable Electronics
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path with fast fault response. Use Value: 0.028 Ω R_DS(on) minimizes voltage drop and self-heating during 6 A peak loads, extending runtime and thermal margin.	Use Scenario: Controlled power-up sequencing for USB peripherals and sensors in handheld devices. IC Role / Device Role / Timing Role: Load switch enabling soft-start and inrush current limiting via gate slew control. Use Value: 15.5 nC Q_g allows precise timing control using small RC networks, reducing BOM count vs. integrated load switches.
Synchronous Buck Converter High-Side Switch	OR-ing Diode Replacement in Dual-Rail Systems
Use Scenario: High-efficiency step-down conversion in point-of-load supplies for FPGAs and SoCs. IC Role / Device Role / Timing Role: Synchronous rectifier replacement for low-side N-MOSFET, driven by dedicated gate driver. Use Value: Body diode t_rr = 45–70 ns and low Q_rr reduce shoot-through risk and improve light-load efficiency vs. discrete Schottky diodes.	Use Scenario: Redundant power path selection in dual-battery or AC/DC + battery backup systems. IC Role / Device Role / Timing Role: Active OR-ing element replacing passive diodes to eliminate forward voltage drop. Use Value: -0.9 to -1.2 V V_SD at -6.2 A cuts conduction loss by >60% versus 0.3 V Schottky, improving system efficiency and thermal profile.

Battery Protection Circuit

Load Switch for Portable Electronics

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path with fast fault response.

Use Value: 0.028 Ω R_DS(on) minimizes voltage drop and self-heating during 6 A peak loads, extending runtime and thermal margin.

Use Scenario: Controlled power-up sequencing for USB peripherals and sensors in handheld devices.

IC Role / Device Role / Timing Role: Load switch enabling soft-start and inrush current limiting via gate slew control.

Use Value: 15.5 nC Q_g allows precise timing control using small RC networks, reducing BOM count vs. integrated load switches.

Synchronous Buck Converter High-Side Switch

OR-ing Diode Replacement in Dual-Rail Systems

Use Scenario: High-efficiency step-down conversion in point-of-load supplies for FPGAs and SoCs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement for low-side N-MOSFET, driven by dedicated gate driver.

Use Value: Body diode t_rr = 45–70 ns and low Q_rr reduce shoot-through risk and improve light-load efficiency vs. discrete Schottky diodes.

Use Scenario: Redundant power path selection in dual-battery or AC/DC + battery backup systems.

IC Role / Device Role / Timing Role: Active OR-ing element replacing passive diodes to eliminate forward voltage drop.

Use Value: -0.9 to -1.2 V V_SD at -6.2 A cuts conduction loss by >60% versus 0.3 V Schottky, improving system efficiency and thermal profile.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.022 Ω at -4.5 V; higher Q_g = 22 nC; same 1206-8 package	Better conduction loss but slower switching; suited for lower-frequency, high-current loads	Prefer Si7157DP-T1-GE3 when minimizing I²R loss dominates over switching loss
DMN2020LFG-7	R_DS(on) = 0.035 Ω at -4.5 V; lower V_GS(th) = -0.35 V; 2 mm × 2 mm WDFN package	Smaller footprint but higher on-resistance; less thermal mass for transient loads	Choose DMN2020LFG-7 when board area is more constrained than thermal budget

Compared with SI5475BDC-T1-E3, Si7157DP-T1-GE3 offers lower conduction loss but demands more gate drive energy, while DMN2020LFG-7 trades higher R_DS(on) for reduced footprint-making SI5475BDC-T1-E3 optimal for balanced thermal, size, and drive constraints in portable power rails.

Availability

SI5475BDC-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, portable load switches, synchronous buck converters, and OR-ing applications requiring stable component supply, Pb-free compliance, and consistent parametric performance across production lots.

Supply support for SI5475BDC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, reliability, and miniaturization for industrial and consumer markets.

The Si5475BDC belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered specifically for high-density DC-DC conversion, battery management, and load switching where low gate-threshold voltage and low R_DS(on) are essential.

FAQ

What is the maximum continuous drain current rating for SI5475BDC-T1-E3 at 70 °C case temperature?

The SI5475BDC-T1-E3 is rated for -6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value is package-limited and assumes proper PCB thermal design per the 1" × 1" FR4 mounting condition defined in the datasheet. Exceeding this current risks thermal runaway due to the device's R_thJA of 40–50 °C/W.

Does SI5475BDC-T1-E3 support 1.8 V logic-level gate drive?

Yes, SI5475BDC-T1-E3 is explicitly rated for 1.8 V logic compatibility: its V_GS(th) range is -0.45 V to -1.0 V, and R_DS(on) is specified down to V_GS = -1.8 V (0.054 Ω). This enables direct interfacing with 1.8 V microcontrollers and PMICs without level-shifting circuitry, confirmed in the Product Summary and Specifications tables.

What is the thermal resistance from junction to ambient for SI5475BDC-T1-E3?

The SI5475BDC-T1-E3 has a typical junction-to-ambient thermal resistance (R_thJA) of 40 °C/W and a maximum of 50 °C/W under t ≤ 5 s pulse conditions on a 1" × 1" FR4 board. This value assumes standard JEDEC test conditions and validates the need for thermal relief pads or copper pour to maintain T_J ≤ 150 °C in continuous operation.

Can SI5475BDC-T1-E3 be used as a synchronous rectifier in a buck converter?

Yes, SI5475BDC-T1-E3 is suitable as a synchronous rectifier: its body diode exhibits t_rr = 45–70 ns and Q_rr = 27–42 nC, and its low R_DS(on) reduces conduction loss versus Schottky diodes. However, it must be actively driven with appropriate dead-time control to avoid shoot-through-verified in the Dynamic Characteristics section.

What is the marking code for SI5475BDC-T1-E3?

The marking code for SI5475BDC-T1-E3 is "BN", as stated in the Marking Code section of the datasheet. This two-character code appears on the top surface of the 1206-8 ChipFET package and is used for lot traceability and visual identification during assembly and inspection.

SI5475BDC-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 5.6A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 6.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5475BDC-T1-E3 FAQ

1.How can I place an order for SI5475BDC-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5475BDC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5475BDC-T1-E3 reliable?

The price and inventory of SI5475BDC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5475BDC-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5475BDC-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5475BDC-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5475BDC-T1-E3?

SI5475BDC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5475BDC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5475BDC-T1-E3?

For technical support, including SI5475BDC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5475BDC-T1-E3 requirements.

6.How does Aetrix verify that SI5475BDC-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5475BDC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5475BDC-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5475BDC-T1-E3?

All SI5475BDC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5475BDC-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5475BDC-T1-E3 part is unused and in its original packaging.

Return procedure for SI5475BDC-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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