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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5475DC-T1-GE3

Name: SI5475DC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5475DC-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5475DC-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5475DC-T1-GE3.pdf

Description:: MOSFET P-CH 12V 5.5A 1206-8

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Product details

Overview

SI5475DC-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -12 V drain-source voltage, with R_DS(on) = 0.031 Ω at V_GS = -4.5 V and continuous drain current of -7.6 A at T_A = 25 °C. It operates in low-voltage load switching applications such as USB port power control and battery protection circuits.

For engineers reviewing the SI5475DC-T1-GE3 datasheet, SI5475DC-T1-GE3 pinout, SI5475DC-T1-GE3 application, or SI5475DC-T1-GE3 equivalent, key selection criteria include its 1.8 V gate threshold compatibility, halogen-free and RoHS-compliant ChipFET package, and verified thermal resistance (R_thJA = 80 °C/W steady-state) for compact PCB layouts.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge (Q_g = 19–29 nC). Its negative V_GS(th) (-0.45 V typ.) enables reliable turn-on with logic-level gate drive down to 1.8 V.

The 1206-8 ChipFET package features exposed drain pads for enhanced thermal conduction and supports bottom-side solder interconnection without requiring solder fillets at the copper terminations. It is optimized for space-constrained DC-DC converter high-side switches and reverse-polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for low-voltage rail protection
R_DS(on) @ V_GS = -4.5 V	0.031 Ω - Enables <150 mW conduction loss at 5.5 A
I_D (continuous, T_A = 25 °C)	-7.6 A - Sustains typical USB PD or battery-switching loads
V_GS(th)	-0.45 V (typ.) - Ensures robust turn-on with 1.8 V logic drivers
Q_g	19–29 nC - Supports efficient 1–2 MHz switching in synchronous buck topologies
R_thJA (steady-state)	80 °C/W - Allows ~1.3 W dissipation on standard FR4 without heatsink
Package	1206-8 ChipFET - 3.0 mm × 1.8 mm leadless footprint with exposed drain pad

Pinout & Package

SI5475DC-T1-GE3 uses the 1206-8 ChipFET package: a leadless, surface-mount package with eight terminals arranged in two rows (4 per side), where the center four terminals are drains (D), one terminal is gate (G), and one is source (S). The drain terminals are internally connected and thermally tied to the exposed bottom pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (top row)	Drain (D)	Internally paralleled high-current output path; electrically and thermally connected to exposed bottom pad
5	Gate (G)	Control input with ±8 V absolute max rating; requires no external gate resistor for 1.8 V logic drive
6, 7, 8 (bottom row)	Drain (D) / Source (S)	Terminals 6 & 7 = Drain; Terminal 8 = Source - provides dedicated low-inductance source return path

Key Features

Feature	Design Value
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer electronics export compliance
TrenchFET® architecture	Delivers 31% lower R_DS(on) vs. planar P-channel MOSFETs at same die size - improves power density
1.8 V gate-rated	Guaranteed turn-on with 1.8 V microcontroller GPIO - eliminates level-shifter need in ultra-low-power systems
Exposed drain pad	Reduces R_thJF to 15–20 °C/W - enables >2× higher pulsed current capability than standard SO-8
Low Q_gd/Q_g ratio	Q_gd = 3.6 nC / Q_g = 19–29 nC - minimizes Miller-induced switching instability in high-dV/dt environments

Applications

USB Power Switching	Battery Protection Circuit
Use Scenario: Controlling power delivery to downstream USB peripherals in portable devices. IC Role / Device Role: High-side load switch enabling/disabling VBUS path with reverse-current blocking. Use Value: R_DS(on) ≤ 0.041 Ω at -2.5 V ensures <260 mW loss at 2.5 A, extending battery runtime.	Use Scenario: Preventing over-discharge and reverse polarity connection in single-cell Li-ion packs. IC Role / Device Role: Reverse-battery protection switch placed between battery anode and system ground. Use Value: V_DS = -12 V rating safely blocks up to 10 V reverse battery insertion; low V_GS(th) ensures fail-safe cutoff.
Hot-Swap Controller	DC-DC Converter Synchronous Rectifier
Use Scenario: In-rush limiting and fault isolation during live insertion of modular boards. IC Role / Device Role: Controlled turn-on switch in series with supply rail to limit peak surge current. Use Value: Gate threshold stability across -55 to 150 °C prevents unintended turn-on during thermal cycling.	Use Scenario: Replacing Schottky diodes in buck converter output stage to reduce conduction loss. IC Role / Device Role: Synchronous rectifier operating in low-duty-cycle, high-current phase. Use Value: Q_g ≤ 29 nC allows clean 1 MHz switching with <10 ns rise/fall times - reduces switching loss by 40% vs. diode solution.

USB Power Switching

Battery Protection Circuit

Use Scenario: Controlling power delivery to downstream USB peripherals in portable devices.

IC Role / Device Role: High-side load switch enabling/disabling VBUS path with reverse-current blocking.

Use Value: R_DS(on) ≤ 0.041 Ω at -2.5 V ensures <260 mW loss at 2.5 A, extending battery runtime.

Use Scenario: Preventing over-discharge and reverse polarity connection in single-cell Li-ion packs.

IC Role / Device Role: Reverse-battery protection switch placed between battery anode and system ground.

Use Value: V_DS = -12 V rating safely blocks up to 10 V reverse battery insertion; low V_GS(th) ensures fail-safe cutoff.

Hot-Swap Controller

DC-DC Converter Synchronous Rectifier

Use Scenario: In-rush limiting and fault isolation during live insertion of modular boards.

IC Role / Device Role: Controlled turn-on switch in series with supply rail to limit peak surge current.

Use Value: Gate threshold stability across -55 to 150 °C prevents unintended turn-on during thermal cycling.

Use Scenario: Replacing Schottky diodes in buck converter output stage to reduce conduction loss.

IC Role / Device Role: Synchronous rectifier operating in low-duty-cycle, high-current phase.

Use Value: Q_g ≤ 29 nC allows clean 1 MHz switching with <10 ns rise/fall times - reduces switching loss by 40% vs. diode solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.022 Ω @ -4.5 V; smaller 1206-6 ChipFET (6-terminal); higher ID = -10.5 A	Better suited for higher-current hot-swap rails (>8 A); requires layout revision due to different pin count	Select when higher current headroom and lower R_DS(on) justify re-layout
DMN2053LFG-7	R_DS(on) = 0.035 Ω @ -4.5 V; 1206-8 package; V_GS(th) = -0.7 V (less logic-compatible)	Requires ≥2.5 V gate drive; less suitable for 1.8 V MCU interfaces	Prefer when existing design uses 2.5 V+ control logic and thermal margin permits higher R_DS(on)

Compared with Si7157DP-T1-GE3 and DMN2053LFG-7, SI5475DC-T1-GE3 offers optimal balance of 1.8 V gate compatibility, industry-standard 1206-8 footprint, and proven reliability in battery-powered USB applications - making it ideal for drop-in upgrades in legacy 1206-8 designs.

Availability

SI5475DC-T1-GE3 is available at Aetrix Electronics and suitable for USB power management, battery protection, and hot-swap controller applications requiring stable component supply and long-term industrial availability.

Supply support for SI5475DC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The Si5475DC belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered specifically for low-voltage, high-density load switching in portable and battery-operated systems.

FAQ

What is the maximum junction temperature rating for SI5475DC-T1-GE3?

The SI5475DC-T1-GE3 has an operating junction temperature range of -55 °C to +150 °C. This rating is validated per Vishay's reliability testing and enables use in automotive cabin modules and industrial controllers where ambient temperatures exceed 85 °C. Derating curves in the datasheet confirm safe operation up to 150 °C junction under defined power and thermal conditions.

Does SI5475DC-T1-GE3 support 1.8 V logic-level gate drive?

Yes, SI5475DC-T1-GE3 is explicitly rated for 1.8 V gate drive, with guaranteed R_DS(on) = 0.054 Ω at V_GS = -1.8 V and I_D = -2 A. Its typical V_GS(th) of -0.45 V ensures strong enhancement-mode behavior even at this low voltage, eliminating the need for external level shifters in ultra-low-power microcontroller interfaces.

What is the thermal resistance from junction to foot (R_thJF) for SI5475DC-T1-GE3?

The SI5475DC-T1-GE3 has a maximum R_thJF of 20 °C/W under steady-state conditions. This value reflects conduction from the silicon die directly to the exposed drain pad, enabling efficient heat transfer to the PCB copper pour. It is measured per JEDEC JESD51-14 and supports high-pulsed-current operation in short-duration load-switch events.

Is SI5475DC-T1-GE3 halogen-free and RoHS-compliant?

Yes, SI5475DC-T1-GE3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. The "-GE3" suffix explicitly denotes this dual compliance, distinguishing it from the "-E3" variant which is only lead-free. This makes SI5475DC-T1-GE3 suitable for consumer electronics markets with strict environmental regulations.

Can SI5475DC-T1-GE3 be used as a synchronous rectifier in a buck converter?

Yes, SI5475DC-T1-GE3 is suitable as a synchronous rectifier in low-voltage buck converters. With Q_g = 19–29 nC, t_r = 20–30 ns, and R_DS(on) = 0.031 Ω at -4.5 V, it delivers significantly lower conduction and switching losses than Schottky diodes below 5 V output. Its 1206-8 footprint also simplifies layout integration alongside common controller ICs.

SI5475DC-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 5.5A, 4.5V

Vgs(th) (Max) @ Id:: 450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5475DC-T1-GE3 FAQ

1.How can I place an order for SI5475DC-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5475DC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5475DC-T1-GE3 reliable?

The price and inventory of SI5475DC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5475DC-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5475DC-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5475DC-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5475DC-T1-GE3?

SI5475DC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5475DC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5475DC-T1-GE3?

For technical support, including SI5475DC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5475DC-T1-GE3 requirements.

6.How does Aetrix verify that SI5475DC-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5475DC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5475DC-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5475DC-T1-GE3?

All SI5475DC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5475DC-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5475DC-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5475DC-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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