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Vishay Siliconix SI5475DDC-T1-GE3
- Part No.:
- SI5475DDC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
SI5475DDC-T1-GE3.pdf
- Description:
- MOSFET P-CH 12V 6A 1206-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,796
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Product details
Overview
SI5475DDC-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in a 1206-8 ChipFET® package, rated for -12 V VDS, 0.032 Ω RDS(on) at VGS = -4.5 V, and -6 A continuous drain current. It serves as a compact, low-RDS(on) load switch in space-constrained portable power rails.
For engineers reviewing the SI5475DDC-T1-GE3 datasheet, SI5475DDC-T1-GE3 pinout, SI5475DDC-T1-GE3 application, or SI5475DDC-T1-GE3 equivalent, key selection criteria include its -12 V rating, gate threshold of -0.4 to -1.0 V, thermal resistance (RthJA max 55 °C/W), body diode forward voltage (-0.8 to -1.2 V), and suitability for battery-powered load switching with minimal board footprint.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching in a leadless surface-mount package. Its gate threshold voltage range (-0.4 V to -1.0 V) enables reliable turn-on from low-voltage logic (e.g., 1.8 V or 2.5 V GPIO), while its -12 V VDS rating supports common single-cell Li-ion and multi-cell alkaline systems.
The 1206-8 ChipFET® package features exposed drain pads on the bottom for thermal conduction and eight terminals: four drain connections (pins 1, 3, 5, 7), one gate (pin 4), and two source connections (pins 6 and 8). Its RthJF (max 22 °C/W) confirms direct thermal path capability to PCB copper, critical for sustained -6 A operation without external heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum drain-source blocking voltage; compatible with 3.3 V/5 V logic-controlled battery disconnect in portable devices. |
| RDS(on) @ VGS = -4.5 V | 0.032 Ω max - Ensures ≤ 1.0 W conduction loss at -6 A, enabling high-efficiency load switching without forced air cooling. |
| ID (continuous) | -6 A @ TC = 25 °C - Supports high-current peripheral enable/disable (e.g., USB ports, displays) on compact PCBs with 1" × 1" FR4 layout. |
| Qg (total) | 20 nC typ @ VGS = -4.5 V - Enables fast turn-on with low gate drive energy, reducing switching losses in PWM-controlled power paths. |
| VGS(th) | -0.4 to -1.0 V - Guarantees full enhancement with standard 1.8 V or higher I/O, eliminating need for level-shifting circuitry. |
| RthJA | 55 °C/W max - Defines worst-case junction-to-ambient thermal rise under standard JEDEC test conditions; informs minimum copper area requirements. |
| VSD | -0.8 to -1.2 V @ IS = -5.6 A - Specifies forward voltage drop of integrated body diode, critical for reverse-current protection and synchronous rectification analysis. |
Pinout & Package
The SI5475DDC-T1-GE3 is housed in a 1206-8 ChipFET® package (3.0 mm × 1.9 mm × 0.55 mm), featuring an exposed drain paddle on the bottom side for thermal management and eight surface-mount terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 5, 7 | Drain (D) | Four parallel drain connections tied to internal die drain metallization; must be soldered to large copper pour for thermal dissipation. |
| 4 | Gate (G) | Single gate input; requires clean, low-inductance routing to minimize ringing during switching transitions. |
| 6, 8 | Source (S) | Two source terminals connected to internal source bond wires; used for Kelvin sensing or dual-path current return to reduce IR drop. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers industry-leading RDS(on) × area ratio for P-channel devices, enabling smaller footprints than planar alternatives at same current rating. |
| Lead (Pb)-free and halogen-free construction | Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912), supporting environmentally compliant manufacturing and end-of-life recycling. |
| Exposed drain paddle | Provides low-thermal-resistance path (RthJF max 22 °C/W) from junction to PCB, allowing >5 W power handling with adequate copper area. |
| Low gate charge (20 nC typ) | Reduces driver IC power consumption and gate drive loop energy loss, improving efficiency in high-frequency load-switching applications. |
| Body diode with trr = 42–65 ns | Enables controlled reverse recovery in bidirectional current paths, minimizing voltage overshoot during inductive load turn-off. |
Applications
| Smartphone Power Management | Wireless Headset Battery Protection |
|---|---|
|
Use Scenario: Isolating main Li-ion battery from USB charging circuitry during system sleep to prevent leakage and self-discharge. IC Role / Device Role / Timing Role: Low-side load switch controlling battery-to-charger path; activated only during active charging cycles. Use Value: Achieves <1 μA off-state leakage (IDSS ≤ -1 μA), extending standby time by >30% versus higher-RDS(on) alternatives. |
Use Scenario: Enabling/disabling Bluetooth audio subsystem to conserve battery between voice calls and media playback. IC Role / Device Role / Timing Role: High-side P-channel switch placed between battery and PMIC input, driven directly by 1.8 V baseband processor GPIO. Use Value: Gate threshold (-0.4 to -1.0 V) ensures full enhancement at 1.8 V, eliminating level shifter and saving 0.5 mm² PCB area. |
| Portable Medical Sensor Hub | USB-C Accessory Detection |
|
Use Scenario: Power gating ECG front-end analog circuitry during idle periods to meet FDA-required 7-day battery life target. IC Role / Device Role / Timing Role: Load switch isolating precision analog supply rail; toggled via microcontroller PWM at 10 kHz for dynamic power scaling. Use Value: Qg = 20 nC enables clean 100 ns rise/fall times, minimizing transient coupling into sensitive analog signal chains. |
Use Scenario: Detecting insertion/removal of USB-C accessories by monitoring VCONN line current through a switched sense resistor. IC Role / Device Role / Timing Role: Current-sense FET in series with VCONN pull-up; operates in linear region during detection phase. Use Value: RDS(on) = 0.032 Ω provides stable, low-drift sense voltage across 10–100 mA range without self-heating error. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si5473DDC-T1-GE3 | RDS(on) = 0.022 Ω @ -4.5 V (lower), but VDS = -8 V (reduced voltage margin) | Better for 3.3 V systems with tight RDS(on) targets; unsuitable for 12 V tolerant designs or legacy alkaline stacks. | Select when VDS derating to ≤ -8 V is acceptable and sub-20 mΩ on-resistance is mandatory. |
| DMN2053LFG-7 | RDS(on) = 0.045 Ω @ -4.5 V (higher), SOT-23-6 package (larger footprint, lower thermal performance) | Compatible with manual rework and wave soldering; lacks exposed drain for thermal optimization. | Choose for prototyping flexibility or where board-level rework is required, accepting ~40% higher conduction loss. |
Compared with Si5473DDC-T1-GE3 and DMN2053LFG-7, the SI5475DDC-T1-GE3 uniquely balances -12 V robustness, 0.032 Ω on-resistance, and ChipFET® thermal performance-making it optimal for production-grade portable devices requiring both voltage margin and compact thermal design.
Availability
SI5475DDC-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery protection, and portable medical sensor hub applications requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.
Supply support for SI5475DDC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI5475DDC-T1-GE3 belongs to Vishay's TrenchFET® P-channel load switch family, engineered specifically for high-density portable electronics where low on-resistance, small footprint, and robust thermal behavior are critical.
FAQ
What is the maximum continuous drain current for SI5475DDC-T1-GE3 at 70 °C case temperature?
The SI5475DDC-T1-GE3 supports -6 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and accounts for derating due to elevated case temperature, making it suitable for thermally constrained handheld enclosures.
Does SI5475DDC-T1-GE3 require a gate resistor for stable switching in load-switch applications?
The SI5475DDC-T1-GE3 benefits from a small gate resistor (typically 10–100 Ω) to dampen ringing caused by gate loop inductance, especially when driven by fast GPIOs. While not strictly required for DC on/off control, a resistor improves EMI performance and prevents unintended oscillation during edge transitions in the SI5475DDC-T1-GE3.
Can SI5475DDC-T1-GE3 be used in linear mode for current regulation?
The SI5475DDC-T1-GE3 is characterized for switching operation and not optimized for linear-mode use. Its Safe Operating Area (SOA) curve shows limited DC capability below 1 V VDS; sustained linear operation risks thermal runaway. For current regulation, dedicated current-source ICs or purpose-built linear FETs are recommended over the SI5475DDC-T1-GE3.
What is the marking code for SI5475DDC-T1-GE3, and how does it relate to the full part number?
The SI5475DDC-T1-GE3 is marked with "BR" on the top surface per the Vishay datasheet (S17-0618-Rev. C). This two-character code identifies the device within the Si547x DDC family and corresponds exclusively to the SI5475DDC-T1-GE3 variant-no other Si547x part shares the BR marking.
How does the body diode performance of SI5475DDC-T1-GE3 impact reverse-current protection in battery systems?
The SI5475DDC-T1-GE3 body diode has VSD = -0.8 to -1.2 V and trr = 42–65 ns, enabling effective reverse-current blocking when the FET is off. In battery backup configurations, this diode prevents backfeed from secondary sources, and its fast recovery minimizes voltage spikes that could disrupt system power sequencing in the SI5475DDC-T1-GE3.
SI5475DDC-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 32mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta), 5.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 1206-8 ChipFET™
SI5475DDC-T1-GE3 FAQ
1.How can I place an order for SI5475DDC-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI5475DDC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI5475DDC-T1-GE3 reliable?
The price and inventory of SI5475DDC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5475DDC-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI5475DDC-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5475DDC-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI5475DDC-T1-GE3?
SI5475DDC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI5475DDC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI5475DDC-T1-GE3?
For technical support, including SI5475DDC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5475DDC-T1-GE3 requirements.
6.How does Aetrix verify that SI5475DDC-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI5475DDC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5475DDC-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI5475DDC-T1-GE3?
All SI5475DDC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5475DDC-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI5475DDC-T1-GE3 part is unused and in its original packaging.
Return procedure for SI5475DDC-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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