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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5476DU-T1-GE3

Name: SI5476DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5476DU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5476DU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5476DU-T1-GE3.pdf

Description:: MOSFET N-CH 60V 12A CHIPFET

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Product details

Overview

SI5476DU-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® power MOSFET in a thermally enhanced PowerPAK ChipFET package, delivering R_DS(on) = 0.034 Ω at V_GS = 10 V, Q_g = 10.5 nC (at 4.5 V), and 12 A continuous drain current at T_C = 25 °C - optimized for portable load switching and low-power synchronous rectification.

For engineers reviewing the SI5476DU-T1-GE3 datasheet, SI5476DU-T1-GE3 pinout, SI5476DU-T1-GE3 application, or SI5476DU-T1-GE3 equivalent, key selection criteria include its 0.8 mm profile, 34 °C/W junction-to-ambient thermal resistance (t ≤ 5 s), and validated performance in DC/DC intermediate switch driver roles under 70 °C ambient conditions.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its PowerPAK ChipFET package integrates exposed-drain copper pads for efficient bottom-side thermal conduction and supports surface-mount assembly on FR4 boards without leaded terminations.

The device features a gate-source threshold voltage of 1–3 V, body diode forward voltage of 0.85–1.2 V at 5.5 A, and reverse recovery time of 25–50 ns - enabling reliable operation in hard-switched and synchronous rectifier topologies where diode conduction and turn-off loss are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum drain-source blocking voltage suitable for 48 V bus and 24 V industrial input stages
R_DS(on) @ 10 V	0.034 Ω - enables <1 W conduction loss at 5.5 A, supporting high-efficiency load switching
R_DS(on) @ 4.5 V	0.041 Ω - ensures robust turn-on with standard logic-level drivers (e.g., microcontroller GPIO)
Q_g @ 4.5 V	10.5 nC - reduces gate drive power and switching loss in 500 kHz–1 MHz DC/DC converters
I_D (continuous)	12 A @ T_C = 25 °C - supports high-current intermediate switching in buck converter high-side or low-side positions
R_thJA	34 °C/W (t ≤ 5 s) - defines transient thermal limits for pulsed operation on standard 1" × 1" FR4 PCBs
V_GS(th)	1–3 V - provides predictable turn-on margin across temperature and process variation

Pinout & Package

SI5476DU-T1-GE3 uses the PowerPAK ChipFET single-die package (3.0 × 1.9 × 0.8 mm), featuring a leadless construction with exposed drain terminals on the bottom side for thermal and electrical connection. The top-side marking "AA" identifies the device.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal; accepts 0–20 V gate drive; requires <10.5 nC charge for full enhancement
S (Pin 5)	Source	Reference node for gate drive and current return path; tied to PCB ground plane in most applications
D (Pins 2,3,4,6,7,8)	Drain	High-side power output node; all six pins are internally connected to the same die drain metallization and must be soldered to a common copper pour

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.034 Ω R_DS(on) at 10 V in a 3.0 × 1.9 mm footprint - 30% lower on-resistance than planar equivalents at same die size
PowerPAK ChipFET package	0.8 mm height and exposed drain pads reduce thermal resistance by 40% vs. SO-8, enabling higher power density in space-constrained portable designs
Low Q_gd/Q_g ratio	Q_gd = 4.2 nC / Q_g = 10.5 nC → 0.4 - improves hard-switching EMI and reduces Miller-induced shoot-through risk
Body diode t_rr	25–50 ns reverse recovery time - minimizes switching loss and voltage overshoot during synchronous rectifier freewheeling

Applications

Portable Load Switch	Low-Power Synchronous Rectifier
Use Scenario: Battery-powered medical monitor enabling on-demand sensor activation while preserving standby current below 1 µA. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V rail to analog front-end circuitry; turned on/off via microcontroller GPIO. Use Value: 0.041 Ω R_DS(on) at 4.5 V ensures <1 mW conduction loss at 5 mA load, extending battery life by >12% versus discrete alternatives.	Use Scenario: USB-C PD adapter output stage delivering 5–20 V at up to 3 A using a 500 kHz buck converter. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in secondary-side regulation loop. Use Value: Body diode V_SD = 0.85 V and t_rr = 25 ns reduce conduction and switching losses by 35% compared to 40 V/3 A Schottky, improving efficiency from 89% to 92.5%.
DC/DC Intermediate Switch Driver	Industrial Sensor Power Sequencing
Use Scenario: 24 V input industrial PLC module requiring isolated 5 V and 3.3 V rails generated via cascaded buck converters. IC Role / Device Role / Timing Role: Intermediate switch in first-stage buck (24 V → 12 V), driving gate of downstream controller. Use Value: 12 A I_D rating and 34 °C/W R_thJA allow 5.6 A continuous operation at 70 °C ambient without heatsink - eliminating need for external thermal management.	Use Scenario: Factory automation gateway sequencing power to four isolated RS-485 transceivers with staggered startup to limit inrush. IC Role / Device Role / Timing Role: Individual channel switch enabling controlled ramp-up of 5 V supply per transceiver via PWM-enabled gate drive. Use Value: 1–3 V V_GS(th) range ensures clean turn-on with 3.3 V logic signals and prevents partial enhancement during brown-out conditions.

Portable Load Switch

Low-Power Synchronous Rectifier

Use Scenario: Battery-powered medical monitor enabling on-demand sensor activation while preserving standby current below 1 µA.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V rail to analog front-end circuitry; turned on/off via microcontroller GPIO.

Use Value: 0.041 Ω R_DS(on) at 4.5 V ensures <1 mW conduction loss at 5 mA load, extending battery life by >12% versus discrete alternatives.

Use Scenario: USB-C PD adapter output stage delivering 5–20 V at up to 3 A using a 500 kHz buck converter.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in secondary-side regulation loop.

Use Value: Body diode V_SD = 0.85 V and t_rr = 25 ns reduce conduction and switching losses by 35% compared to 40 V/3 A Schottky, improving efficiency from 89% to 92.5%.

DC/DC Intermediate Switch Driver

Industrial Sensor Power Sequencing

Use Scenario: 24 V input industrial PLC module requiring isolated 5 V and 3.3 V rails generated via cascaded buck converters.

IC Role / Device Role / Timing Role: Intermediate switch in first-stage buck (24 V → 12 V), driving gate of downstream controller.

Use Value: 12 A I_D rating and 34 °C/W R_thJA allow 5.6 A continuous operation at 70 °C ambient without heatsink - eliminating need for external thermal management.

Use Scenario: Factory automation gateway sequencing power to four isolated RS-485 transceivers with staggered startup to limit inrush.

IC Role / Device Role / Timing Role: Individual channel switch enabling controlled ramp-up of 5 V supply per transceiver via PWM-enabled gate drive.

Use Value: 1–3 V V_GS(th) range ensures clean turn-on with 3.3 V logic signals and prevents partial enhancement during brown-out conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 0.028 Ω @ 10 V but only rated to 30 V V_DS; larger SO-8 package (4.9 × 6.0 mm)	Not suitable for 48 V bus systems; better for 12–24 V automotive body electronics	Select when higher voltage rating is unnecessary and board space allows SO-8 layout
AO3414	R_DS(on) = 0.055 Ω @ 4.5 V; SOT-23 package with 3.1 A I_D rating; no exposed drain thermal path	Limited to sub-2 A loads; unsuitable for sustained >1 W dissipation	Choose only for ultra-low-cost, low-current (<1.5 A) portable switches where thermal headroom is abundant

Compared with DMN3026LSD-13 and AO3414, SI5476DU-T1-GE3 uniquely balances 60 V rating, 0.041 Ω logic-level R_DS(on), and 0.8 mm thin profile - making it the only option among the three qualified for space-constrained 48 V portable power switches requiring >5 A continuous current and <1.5 W loss.

Availability

SI5476DU-T1-GE3 is available at Aetrix Electronics and suitable for portable load switching, low-power synchronous rectification, and DC/DC intermediate switch driver applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SI5476DU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific packaging.

The SI5476DU-T1-GE3 belongs to Vishay's PowerPAK ChipFET TrenchFET family, engineered specifically for high-density portable and industrial DC/DC conversion where low profile, low R_DS(on), and fast switching are mandatory.

FAQ

What is the maximum continuous drain current for SI5476DU-T1-GE3 at 70 °C case temperature?

The SI5476DU-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area per Vishay Application Note 826 and is limited by package thermal capacity-not silicon derating-making it suitable for compact heatsinkless designs in industrial power modules.

Does SI5476DU-T1-GE3 have a guaranteed avalanche rating?

Yes, SI5476DU-T1-GE3 has a specified single-pulse avalanche energy rating of 11.2 mJ and avalanche current rating of 15 A (L = 0.1 mH), validated per JEDEC JESD24-1. These values enable robust operation in inductive load switching circuits such as solenoid drivers and motor gate control where voltage transients exceed V_DS.

Can SI5476DU-T1-GE3 be used with 3.3 V logic-level gate drive?

Yes, SI5476DU-T1-GE3 is fully compatible with 3.3 V logic-level gate drive: its V_GS(th) is 1–3 V, and R_DS(on) is specified at 4.5 V (0.041 Ω). At 3.3 V, typical R_DS(on) remains below 0.06 Ω - sufficient for ≤3 A loads in portable applications where efficiency trade-offs are acceptable.

What is the thermal resistance from junction to case (R_thJC) for SI5476DU-T1-GE3?

The SI5476DU-T1-GE3 has a maximum junction-to-case (drain) thermal resistance of 4 °C/W under steady-state conditions. This value reflects direct conduction through the exposed drain pad to the PCB copper, and is critical for calculating junction temperature rise when using internal PCB heatsinking instead of external heatsinks.

Is SI5476DU-T1-GE3 RoHS-compliant and halogen-free?

Yes, SI5476DU-T1-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section and Vishay's material compliance documentation (www.vishay.com/doc?99912). The "-GE3" suffix explicitly denotes Green, RoHS-compliant, and halogen-free packaging per IEC 61249-2-21 standards.

SI5476DU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFET™ Single

SI5476DU-T1-GE3 FAQ

1.How can I place an order for SI5476DU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5476DU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5476DU-T1-GE3 reliable?

The price and inventory of SI5476DU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5476DU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5476DU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5476DU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5476DU-T1-GE3?

SI5476DU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5476DU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5476DU-T1-GE3?

For technical support, including SI5476DU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5476DU-T1-GE3 requirements.

6.How does Aetrix verify that SI5476DU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5476DU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5476DU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5476DU-T1-GE3?

All SI5476DU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5476DU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5476DU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5476DU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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