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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5486DU-T1-E3

Name: SI5486DU-T1-E3
Brand: Vishay Siliconix
SKU: SI5486DU-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5486DU-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5486DU-T1-E3.pdf

Description:: MOSFET N-CH 20V 12A CHIPFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI5486DU-T1-E3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® ChipFET® package, delivering R_DS(on) = 15 mΩ at V_GS = 4.5 V, 12 A continuous drain current (T_C = 25 °C), and 21 nC total gate charge - optimized for high-efficiency load switching in portable power management systems.

For engineers reviewing the SI5486DU-T1-E3 datasheet, SI5486DU-T1-E3 pinout, SI5486DU-T1-E3 application, or SI5486DU-T1-E3 equivalent, this device supports low-voltage logic-level drive, compact PCB layout in space-constrained handheld devices, and thermal performance critical to battery-powered PA switch and point-of-load regulation.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: t_d(on) = 10 ns, t_f = 15–25 ns, and C_iss = 2100 pF at V_DS = 10 V. Its gate threshold voltage (V_GS(th) = 0.4–1.0 V) ensures reliable turn-on with 1.8 V–4.5 V logic drivers.

The PowerPAK ChipFET® package features exposed-drain thermal pads and a 0.8 mm profile, enabling junction-to-case thermal resistance as low as 3 °C/W (typical) and supporting high-current operation without external heatsinking in surface-mount applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage compatible with 3.3 V and 5 V system rails.
R_DS(on)	15 mΩ at V_GS = 4.5 V - Enables <150 mW conduction loss at 12 A, critical for thermal budget in portable designs.
I_D (continuous)	12 A at T_C = 25 °C - Supports high-current load switching without derating in thermally managed layouts.
Q_g	21 nC at V_GS = 4.5 V - Low gate charge reduces driver power and enables efficient PWM control up to ~1 MHz.
V_GS(th)	0.4–1.0 V - Ensures full enhancement with 1.8 V microcontroller GPIOs, eliminating level-shifter requirements.
R_thJC	3 °C/W (typ.) - Allows direct thermal coupling to PCB copper, enabling >20 W power dissipation with minimal ΔT.
C_iss	2100 pF at V_DS = 10 V - Predictable input capacitance simplifies gate driver sizing and EMI filtering.

Pinout & Package

SI5486DU-T1-E3 uses the PowerPAK® ChipFET® single-die package (3.0 × 1.9 mm, 0.8 mm height), with exposed drain terminals on the bottom side for thermal and electrical connection. The top-side marking "AG" identifies the device variant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 6, 7, 8	Drain (D)	Five parallel drain terminals tied to internal die drain and exposed bottom pad - primary current path and thermal conduction path to PCB.
4	Source (S)	Main source connection; electrically isolated from drain and gate - forms return path for load current.
3	Source (S)	Secondary source terminal - improves current sharing and reduces source inductance in high-di/dt switching.
5	Gate (G)	Control input; requires ≤ ±8 V drive - low gate charge enables fast, low-power switching with standard logic-level drivers.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 15 mΩ R_DS(on) at 4.5 V while maintaining robust avalanche rating and low gate charge.
PowerPAK ChipFET® package	0.8 mm profile and exposed drain pad reduce thermal resistance to 3 °C/W (junction-to-case), enabling high-power density.
Logic-level gate drive	V_GS(th) range of 0.4–1.0 V ensures full enhancement using 1.8 V/2.5 V/3.3 V microcontrollers without level shifters.
Low Q_gd/Q_g ratio	Q_gd = 3.1 nC / Q_g = 21 nC → 15% - minimizes Miller effect, improving hard-switching stability and reducing EMI.
Body diode t_rr	30–60 ns reverse recovery time - supports synchronous rectification and reduces shoot-through risk in half-bridge configurations.

Applications

Battery-Powered Load Switch	RF Power Amplifier Switch
Use Scenario: Enabling/disabling power to peripheral modules (e.g., GPS, Bluetooth, camera) in smartphones and wearables to extend battery life. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V rail with fast turn-on (<15 ns) and low quiescent current (I_GSS ≤ ±100 nA). Use Value: 15 mΩ R_DS(on) limits voltage drop to <180 mV at 12 A, preserving system efficiency and minimizing self-heating during sustained operation.	Use Scenario: Transmit/receive antenna path switching in LTE/Wi-Fi front-end modules requiring low insertion loss and high isolation. IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) RF switch driven by baseband controller GPIOs, leveraging low V_GS(th) and fast switching. Use Value: 2100 pF C_iss and 180 pF Cr_ss ensure predictable impedance matching and minimal RF signal distortion up to 2.5 GHz.
Point-of-Load DC-DC Converter	USB-C Power Delivery Switch
Use Scenario: High-frequency synchronous buck converter output stage in FPGA or SoC power supplies, operating at 500 kHz–1 MHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conduction during dead-time and low R_DS(on) during active conduction. Use Value: 30–60 ns t_rr and 17–30 nC Q_rr minimize reverse recovery losses, improving converter efficiency by ≥0.8% at 10 A output.	Use Scenario: Input protection and VBUS path control in USB-C receptacles handling up to 20 V/5 A (100 W) power delivery. IC Role / Device Role / Timing Role: Bidirectional load switch managing VBUS routing between upstream port and downstream device with overcurrent detection interface. Use Value: 20 V V_DS rating and 12 A continuous current support full USB PD 3.0 specification compliance without derating.

Battery-Powered Load Switch

RF Power Amplifier Switch

Use Scenario: Enabling/disabling power to peripheral modules (e.g., GPS, Bluetooth, camera) in smartphones and wearables to extend battery life.

IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V rail with fast turn-on (<15 ns) and low quiescent current (I_GSS ≤ ±100 nA).

Use Value: 15 mΩ R_DS(on) limits voltage drop to <180 mV at 12 A, preserving system efficiency and minimizing self-heating during sustained operation.

Use Scenario: Transmit/receive antenna path switching in LTE/Wi-Fi front-end modules requiring low insertion loss and high isolation.

IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) RF switch driven by baseband controller GPIOs, leveraging low V_GS(th) and fast switching.

Use Value: 2100 pF C_iss and 180 pF Cr_ss ensure predictable impedance matching and minimal RF signal distortion up to 2.5 GHz.

Point-of-Load DC-DC Converter

USB-C Power Delivery Switch

Use Scenario: High-frequency synchronous buck converter output stage in FPGA or SoC power supplies, operating at 500 kHz–1 MHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conduction during dead-time and low R_DS(on) during active conduction.

Use Value: 30–60 ns t_rr and 17–30 nC Q_rr minimize reverse recovery losses, improving converter efficiency by ≥0.8% at 10 A output.

Use Scenario: Input protection and VBUS path control in USB-C receptacles handling up to 20 V/5 A (100 W) power delivery.

IC Role / Device Role / Timing Role: Bidirectional load switch managing VBUS routing between upstream port and downstream device with overcurrent detection interface.

Use Value: 20 V V_DS rating and 12 A continuous current support full USB PD 3.0 specification compliance without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 18 mΩ @ 4.5 V; larger PowerPAK 1212-8 package (3.2 × 3.2 mm); higher Q_g = 28 nC	Higher thermal mass but lower current density; better suited for industrial ambient (>70 °C)	Choose when board space allows larger footprint and higher thermal inertia is preferred over ultra-thin profile.
DMN2020LSD-13	R_DS(on) = 20 mΩ @ 4.5 V; SOT-23-6 package; R_thJA = 120 °C/W (vs. 34 °C/W for SI5486DU)	Limited to ≤3 A continuous due to package thermal limits; not suitable for 12 A load switching	Select only for space-constrained prototypes where 3 A max current and higher on-resistance are acceptable trade-offs.

Compared with SI5486DU-T1-E3, Si7157DP-T1-GE3 offers greater thermal margin in less dense layouts, while DMN2020LSD-13 sacrifices current capability and thermal performance for legacy SOT-23 compatibility - neither is pin-compatible, and PCB redesign is required for substitution.

Availability

SI5486DU-T1-E3 is available at Aetrix Electronics and suitable for battery-powered load switching, RF power amplifier control, point-of-load regulation, and USB-C power delivery applications requiring stable component supply, lead-free/halogen-free compliance, and consistent parametric performance across production lots.

Supply support for SI5486DU-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SI5486DU-T1-E3 belongs to Vishay's PowerPAK ChipFET® logic-level MOSFET family, engineered specifically for high-current, low-voltage switching in portable and space-constrained electronics where thermal density and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SI5486DU-T1-E3 at 70 °C case temperature?

The SI5486DU-T1-E3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is not derated relative to its 25 °C rating - confirming robust thermal design in the PowerPAK ChipFET® package.

Does SI5486DU-T1-E3 require a gate resistor for typical 3.3 V MCU drive?

SI5486DU-T1-E3 does not require an external gate resistor for basic on/off control with 3.3 V microcontrollers, given its low Q_g (21 nC) and logic-level V_GS(th). However, a 5–10 Ω series resistor is recommended to dampen ringing and limit peak gate current during fast switching in high-di/dt layouts.

Can SI5486DU-T1-E3 be used in a synchronous buck converter as the low-side switch?

Yes, SI5486DU-T1-E3 is suitable as a low-side synchronous rectifier in buck converters. Its 30–60 ns body diode reverse recovery time, low R_DS(on), and 12 A current rating enable high efficiency at 500 kHz–1 MHz switching frequencies - provided gate drive timing avoids shoot-through and PCB layout minimizes source inductance.

What is the thermal resistance from junction to ambient for SI5486DU-T1-E3 on a standard FR4 board?

The SI5486DU-T1-E3 has a typical R_thJA of 34 °C/W under standard test conditions (1" × 1" FR4, 2 oz Cu, 2-layer board). This value assumes no additional heatsinking; actual performance improves significantly with thermal vias to inner ground planes or exposed copper areas beneath the drain pad.

Is SI5486DU-T1-E3 compliant with RoHS and halogen-free standards?

Yes, SI5486DU-T1-E3 is lead (Pb)-free and halogen-free, as confirmed by the ordering suffix "-T1-E3" and Vishay's material declaration (Document #99912). It meets JEDEC J-STD-609 Category 1 for halogen content and RoHS Directive 2011/65/EU without exemptions.

SI5486DU-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 7.7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFET™ Single

SI5486DU-T1-E3 FAQ

1.How can I place an order for SI5486DU-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5486DU-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5486DU-T1-E3 reliable?

The price and inventory of SI5486DU-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5486DU-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5486DU-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5486DU-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5486DU-T1-E3?

SI5486DU-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5486DU-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5486DU-T1-E3?

For technical support, including SI5486DU-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5486DU-T1-E3 requirements.

6.How does Aetrix verify that SI5486DU-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5486DU-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5486DU-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5486DU-T1-E3?

All SI5486DU-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5486DU-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5486DU-T1-E3 part is unused and in its original packaging.

Return procedure for SI5486DU-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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