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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5486DU-T1-GE3

Name: SI5486DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5486DU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5486DU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5486DU-T1-GE3.pdf

Description:: MOSFET N-CH 20V 12A CHIPFET

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Product details

Overview

SI5486DU-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® ChipFET® package, delivering 0.015 Ω R_DS(on) at V_GS = 4.5 V, 12 A continuous drain current (T_C = 25 °C), and 21 nC total gate charge - optimized for high-efficiency load switching in portable power management systems.

For engineers reviewing the SI5486DU-T1-GE3 datasheet, SI5486DU-T1-GE3 pinout, SI5486DU-T1-GE3 application, or SI5486DU-T1-GE3 equivalent, key selection criteria include low-voltage gate drive compatibility (1.8 V–4.5 V), thermal resistance (R_thJC = 3 °C/W max), thin 0.8 mm profile, and lead-free/halogen-free compliance per JEDEC J-STD-020.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: t_d(on) = 7–15 ns and t_f = 10–15 ns under 10 V gate drive, enabling efficient operation in synchronous buck converters and battery protection circuits. Its body diode exhibits t_rr = 30–60 ns and Q_rr = 17–30 nC, supporting moderate-frequency hard-switched topologies.

The device operates across –55 °C to +150 °C junction temperature range and features V_GS(th) = 0.4–1.0 V, ensuring reliable turn-on with logic-level controllers. Absolute maximum V_GS is ±8 V, and V_DS rating is strictly limited to 20 V - confirming suitability only for low-voltage DC/DC and load-switch applications, not general-purpose 24 V systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	20 V - defines maximum blocking voltage in load-switch or sync-buck high-side position; not suitable for >20 V rail applications
R_DS(on) @ 4.5 V	0.015 Ω - enables <150 mW conduction loss at 12 A, critical for thermal management in compact portable PCBs
I_D Continuous (T_C)	12 A - achievable only with direct case heatsinking; derates to 9.3 A at 70 °C case temperature
Q_g @ 4.5 V	21 nC - determines gate driver current requirement (~2.1 A peak for 10 ns rise time) and switching loss trade-off
R_thJC	3 °C/W (typ.) - allows ~36 W power dissipation with 108 °C ΔT from junction to case; requires metal-backed PCB or thermal pad
V_GS(th)	0.4–1.0 V - ensures full enhancement with 1.8 V GPIO or low-voltage PMIC outputs without level-shifting
Package	PowerPAK® ChipFET® - 2.0 × 1.9 mm footprint, 0.8 mm height, exposed-drain thermal pad, leadless construction

Pinout & Package

SI5486DU-T1-GE3 uses the PowerPAK® ChipFET® single-die package: 2.0 mm × 1.9 mm footprint, 0.8 mm nominal height, with exposed drain paddle on bottom side for thermal conduction. The package has eight terminals arranged in two rows (4+4), all surface-mount, with no leads - soldering requires reflow per JEDEC J-STD-020 profile; manual iron rework is not recommended.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6, 7, 8	Drain (D)	Internally connected to exposed copper paddle; primary current path and thermal conduction path to PCB
4	Source (S)	Common return node for load current; referenced for gate drive and body diode cathode
5	Gate (G)	Control input; requires ESD protection and low-inductance routing due to 5 Ω gate resistance and 2100 pF C_iss

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.015 Ω R_DS(on) at 4.5 V while maintaining robust short-circuit withstand capability (t_SC > 1 µs)
Thermally enhanced PowerPAK ChipFET®	Reduces R_thJA to 34 °C/W (typ.) vs. 60+ °C/W in standard SO-8, enabling higher power density in space-constrained layouts
Low gate charge (21 nC @ 4.5 V)	Lowers driver power consumption and switching losses in battery-powered devices operating at 500 kHz–2 MHz
Logic-level gate threshold (0.4–1.0 V)	Enables direct drive from 1.8 V or 2.5 V microcontrollers without gate drivers, reducing BOM count
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting green manufacturing and end-of-life recycling

Applications

Smartphone Power Management	USB-C Load Switch
Use Scenario: Controlling power delivery to camera modules, display backlight, or RF front-end in smartphones with tight thermal budgets. IC Role / Device Role / Timing Role: Low-side load switch enabling rapid on/off control with <15 ns fall time and minimal voltage droop during hot-plug events. Use Value: 0.015 Ω R_DS(on) limits I²R loss to <2.2 mW at 400 mA, preserving battery runtime and avoiding localized heating near sensitive sensors.	Use Scenario: Enabling/disabling VBUS path in USB-C receptacles with overcurrent and reverse-voltage protection. IC Role / Device Role / Timing Role: High-side switch controlled by USB PD controller, leveraging low V_GS(th) for reliable turn-on with 3.3 V logic signals. Use Value: 12 A rating supports 3 A @ 20 V (60 W) USB-C PPS operation; body diode V_SD = 0.8–1.2 V prevents backfeed during dead-time intervals.
Point-of-Load Converter	Portable Audio Amplifier Bias Control
Use Scenario: Synchronous rectification in 3.3 V or 5 V buck converters powering SoCs or FPGAs in handheld test equipment. IC Role / Device Role / Timing Role: Bottom-FET in synchronous buck stage, switched at 1–2 MHz with gate drive sourced from integrated controller. Use Value: 310 pF C_oss and 180 pF Cr_ss minimize shoot-through risk and improve light-load efficiency versus higher-capacitance alternatives.	Use Scenario: Enabling Class-D amplifier output stage bias sequencing to prevent pop/click during power-up in Bluetooth speakers. IC Role / Device Role / Timing Role: Controlled turn-on of amplifier supply rails using PWM or enable signal from DSP, exploiting fast 10 ns t_d(on). Use Value: 0.8 mm profile fits under compact speaker enclosures; 0.021 Ω R_DS(on) @ 1.8 V ensures clean bias ramp even with weak GPIO sources.

Smartphone Power Management

USB-C Load Switch

Use Scenario: Controlling power delivery to camera modules, display backlight, or RF front-end in smartphones with tight thermal budgets.

IC Role / Device Role / Timing Role: Low-side load switch enabling rapid on/off control with <15 ns fall time and minimal voltage droop during hot-plug events.

Use Value: 0.015 Ω R_DS(on) limits I²R loss to <2.2 mW at 400 mA, preserving battery runtime and avoiding localized heating near sensitive sensors.

Use Scenario: Enabling/disabling VBUS path in USB-C receptacles with overcurrent and reverse-voltage protection.

IC Role / Device Role / Timing Role: High-side switch controlled by USB PD controller, leveraging low V_GS(th) for reliable turn-on with 3.3 V logic signals.

Use Value: 12 A rating supports 3 A @ 20 V (60 W) USB-C PPS operation; body diode V_SD = 0.8–1.2 V prevents backfeed during dead-time intervals.

Point-of-Load Converter

Portable Audio Amplifier Bias Control

Use Scenario: Synchronous rectification in 3.3 V or 5 V buck converters powering SoCs or FPGAs in handheld test equipment.

IC Role / Device Role / Timing Role: Bottom-FET in synchronous buck stage, switched at 1–2 MHz with gate drive sourced from integrated controller.

Use Value: 310 pF C_oss and 180 pF Cr_ss minimize shoot-through risk and improve light-load efficiency versus higher-capacitance alternatives.

Use Scenario: Enabling Class-D amplifier output stage bias sequencing to prevent pop/click during power-up in Bluetooth speakers.

IC Role / Device Role / Timing Role: Controlled turn-on of amplifier supply rails using PWM or enable signal from DSP, exploiting fast 10 ns t_d(on).

Use Value: 0.8 mm profile fits under compact speaker enclosures; 0.021 Ω R_DS(on) @ 1.8 V ensures clean bias ramp even with weak GPIO sources.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.018 Ω @ 4.5 V; larger PowerPAK 1212-8 package (3.2 × 3.2 mm); 36 nC Q_g	Higher thermal mass supports 15 A continuous but requires more board area; better for industrial over portable use	Choose when higher current headroom and lower thermal stress outweigh size constraints
DMN2020LH-7	R_DS(on) = 0.022 Ω @ 4.5 V; SOT-23-3 package; 7.5 nC Q_g; 6 A I_D rating	Smaller footprint but lower current capacity and higher R_DS(on); suited for sub-3 A loads where ultra-low gate charge dominates	Choose for cost-sensitive, low-current applications where 0.022 Ω loss is acceptable and layout space is extremely limited

Compared with SI5486DU-T1-GE3, Si7157DP-T1-GE3 trades 20% higher R_DS(on) for greater thermal margin in high-reliability systems, while DMN2020LH-7 sacrifices 50% current rating and 3× on-resistance for minimal gate drive energy and smallest possible footprint - making SI5486DU-T1-GE3 the optimal balance of size, loss, and drive simplicity for 10–12 A portable loads.

Availability

SI5486DU-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C load switching, and point-of-load converter designs requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for SI5486DU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI5486DU-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® ChipFET® family, engineered specifically for space-constrained, battery-operated devices demanding low on-resistance, logic-level gate drive, and ultra-thin packaging.

FAQ

What is the maximum continuous drain current for SI5486DU-T1-GE3 at 70 °C case temperature?

The SI5486DU-T1-GE3 supports 12 A continuous drain current at T_C = 25 °C, derating linearly to 9.3 A at T_C = 70 °C per the datasheet's absolute maximum ratings table. This derating reflects thermal limitations of the PowerPAK ChipFET® package under steady-state conduction without forced airflow or additional heatsinking.

Does SI5486DU-T1-GE3 support 1.8 V gate drive in practical applications?

Yes, SI5486DU-T1-GE3 is fully specified for 1.8 V gate drive: R_DS(on) = 0.021 Ω (max) at V_GS = 1.8 V and I_D = 4.8 A. Its V_GS(th) range of 0.4–1.0 V ensures strong enhancement at 1.8 V, making SI5486DU-T1-GE3 suitable for direct interface with 1.8 V microcontrollers and low-voltage PMICs without level shifters.

What is the thermal resistance from junction to case (R_thJC) for SI5486DU-T1-GE3?

The SI5486DU-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 3 °C/W, with a maximum of 4 °C/W. This value is measured from the silicon die to the exposed drain paddle and is critical for estimating junction temperature rise when the device is mounted on a thermally conductive PCB layer or heatsink.

Can SI5486DU-T1-GE3 be used in synchronous rectification for a 5 V output buck converter?

Yes, SI5486DU-T1-GE3 is appropriate for synchronous rectification in 5 V buck converters: its 20 V V_DS rating provides sufficient margin above 5 V output, 0.015 Ω R_DS(on) minimizes conduction loss, and 21 nC Q_g enables efficient switching up to 2 MHz. However, ensure gate drive voltage ≥4.5 V for lowest R_DS(on) and verify body diode reverse recovery (t_rr = 30–60 ns) aligns with controller dead-time settings.

Is SI5486DU-T1-GE3 compatible with lead-free reflow soldering processes?

Yes, SI5486DU-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with a peak reflow temperature of 260 °C. The PowerPAK ChipFET® package is designed for standard Pb-free profiles; however, manual soldering with an iron is not recommended due to its leadless construction and exposed copper paddle geometry.

SI5486DU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 7.7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFET™ Single

SI5486DU-T1-GE3 FAQ

1.How can I place an order for SI5486DU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5486DU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5486DU-T1-GE3 reliable?

The price and inventory of SI5486DU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5486DU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5486DU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5486DU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5486DU-T1-GE3?

SI5486DU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5486DU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5486DU-T1-GE3?

For technical support, including SI5486DU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5486DU-T1-GE3 requirements.

6.How does Aetrix verify that SI5486DU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5486DU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5486DU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5486DU-T1-GE3?

All SI5486DU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5486DU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5486DU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5486DU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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