Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5499DC-T1-E3

Name: SI5499DC-T1-E3
Brand: Vishay Siliconix
SKU: SI5499DC-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI5499DC-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5499DC-T1-E3.pdf

Description:: MOSFET P-CH 8V 6A 1206-8 CHIPFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,672

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI5499DC-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage load switching in portable electronics, featuring -8 V V_DS, 0.036 Ω R_DS(on) at V_GS = -4.5 V, -6 A continuous drain current (T_C = 25 °C), and guaranteed operation down to V_GS = -1.5 V - enabling efficient battery-powered system control with extended runtime.

For engineers reviewing the SI5499DC-T1-E3 datasheet, SI5499DC-T1-E3 pinout, SI5499DC-T1-E3 application, or SI5499DC-T1-E3 equivalent, key selection criteria include ultra-low gate-threshold compatibility with 1.5–1.8 V logic, ChipFET® package thermal performance, body diode recovery characteristics, and lead-free/halogen-free compliance per IEC 61249-2-21.

Technical Context

This P-channel MOSFET uses trench-gate silicon technology to achieve stable R_DS(on) across -1.5 V to -4.5 V gate drive, with V_GS(th) tightly specified between -0.35 V and -0.8 V. Its low Q_g (14 nC typical at -4.5 V) supports fast switching in high-frequency DC/DC and power-path control circuits.

The device integrates a source-drain body diode with t_rr = 45–70 ns and Q_rr = 18–27 nC, enabling synchronous rectification or reverse-polarity protection without external diodes. Thermal design leverages ChipFET®'s low R_thJF (17 °C/W typ.) and exposed-drain construction for direct PCB heat sinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum blocking voltage for single-cell Li-ion or 3.3 V rail protection applications.
R_DS(on)	0.036 Ω @ V_GS = -4.5 V - Enables <100 mW conduction loss at 6 A, critical for thermally constrained portable PCBs.
I_D (cont)	-6 A @ T_C = 25 °C - Package-limited current rating suitable for USB-C PD load switches and power bank output stages.
V_GS(th)	-0.35 to -0.8 V - Ensures reliable turn-on with 1.5 V logic-level drivers, eliminating need for level-shifting circuitry.
Q_g	14 nC @ V_GS = -4.5 V - Supports >1 MHz switching in compact DC/DC converters with minimal gate-drive power loss.
t_rr	45–70 ns - Limits reverse-recovery energy loss during hard commutation in buck or OR-ing configurations.
R_thJF	17 °C/W (typ.) - Exposed drain pad enables direct thermal coupling to copper pour, reducing junction temperature rise by ~30 °C vs. standard SO-8.

Pinout & Package

SI5499DC-T1-E3 is housed in the 1206-8 ChipFET® package - a leadless, surface-mount, thermally enhanced outline with exposed drain terminals on all four sides. The package measures 3.3 mm × 3.3 mm × 0.85 mm and features solderable copper pads only (no plating on singulated edges).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (all 4 side pads)	Exposed copper drain connects directly to PCB ground plane or thermal pad - primary heat path and current return node.
Source (S)	Reference node for gate control and current return	Two dedicated top-side S pads provide low-inductance source connection; used for sensing and feedback in precision load switches.
Gate (G)	Control input for channel conduction	Single top-side G pad accepts standard 0.4 mm pitch routing; low C_iss (1290 pF) minimizes Miller effect in high-dV/dt environments.

Key Features

Feature	Design Value
1.5 V gate-rated operation	Guaranteed R_DS(on) ≤ 0.077 Ω at V_GS = -1.5 V - eliminates level shifters in ultra-low-power microcontroller GPIO-driven switches.
TrenchFET® silicon process	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. planar P-MOS - improves efficiency in battery-operated DC/DC converters.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU - meets environmental requirements for consumer and medical portable devices.
Low R_thJF	17 °C/W typical junction-to-foot thermal resistance - enables 2.5 W continuous dissipation on 1" × 1" FR4 without heatsink.
Body diode with fast t_rr	45–70 ns reverse recovery time - reduces shoot-through risk and EMI in synchronous buck topologies using external high-side control.

Applications

Smartphone Power Management	USB-C Power Delivery Switch
Use Scenario: Controlling power delivery to USB-C accessories while maintaining strict 1.5 V logic compatibility with baseband SoCs. IC Role / Device Role / Timing Role: High-side load switch managing VBUS path with reverse-current blocking and inrush control. Use Value: Guaranteed -1.5 V turn-on ensures seamless integration with 1.8 V/1.5 V I/O domains, reducing BOM count by eliminating gate drivers.	Use Scenario: Enabling dual-role power (DRP) negotiation by isolating VCONN and VBUS paths during port role swaps. IC Role / Device Role / Timing Role: Bidirectional load switch providing fast (<100 ns) turn-off to prevent backfeed during CC logic reconfiguration. Use Value: Low Q_gd (2.7 nC) and fast t_f (30–45 ns) minimize dead-time uncertainty, supporting USB PD 3.1 EPR timing budgets.
Wireless Earbud Charging Case	Medical Wearable Battery Protection
Use Scenario: Isolating lithium-polymer cells from charging circuitry during sleep mode to reduce quiescent current below 1 µA. IC Role / Device Role / Timing Role: Low-leakage P-channel switch placed between battery and system PMIC, controlled by MCU GPIO. Use Value: IDSS ≤ -1 µA at -8 V ensures <100 nA total system leakage - extends shelf life of sealed earbud cases beyond 12 months.	Use Scenario: Protecting sensitive analog front-end sensors from battery overvoltage or reverse polarity during field replacement. IC Role / Device Role / Timing Role: Reverse-polarity protection switch with integrated body diode clamping and thermal foldback. Use Value: V_SD = -0.7 to -1.2 V at -2.1 A enables low-loss forward conduction while limiting fault energy during misinsertion events.

Smartphone Power Management

USB-C Power Delivery Switch

Use Scenario: Controlling power delivery to USB-C accessories while maintaining strict 1.5 V logic compatibility with baseband SoCs.

IC Role / Device Role / Timing Role: High-side load switch managing VBUS path with reverse-current blocking and inrush control.

Use Value: Guaranteed -1.5 V turn-on ensures seamless integration with 1.8 V/1.5 V I/O domains, reducing BOM count by eliminating gate drivers.

Use Scenario: Enabling dual-role power (DRP) negotiation by isolating VCONN and VBUS paths during port role swaps.

IC Role / Device Role / Timing Role: Bidirectional load switch providing fast (<100 ns) turn-off to prevent backfeed during CC logic reconfiguration.

Use Value: Low Q_gd (2.7 nC) and fast t_f (30–45 ns) minimize dead-time uncertainty, supporting USB PD 3.1 EPR timing budgets.

Wireless Earbud Charging Case

Medical Wearable Battery Protection

Use Scenario: Isolating lithium-polymer cells from charging circuitry during sleep mode to reduce quiescent current below 1 µA.

IC Role / Device Role / Timing Role: Low-leakage P-channel switch placed between battery and system PMIC, controlled by MCU GPIO.

Use Value: IDSS ≤ -1 µA at -8 V ensures <100 nA total system leakage - extends shelf life of sealed earbud cases beyond 12 months.

Use Scenario: Protecting sensitive analog front-end sensors from battery overvoltage or reverse polarity during field replacement.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch with integrated body diode clamping and thermal foldback.

Use Value: V_SD = -0.7 to -1.2 V at -2.1 A enables low-loss forward conduction while limiting fault energy during misinsertion events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si5403DC-T1-E3	Lower R_DS(on) (0.022 Ω @ -4.5 V) but higher V_GS(th) (-0.5 to -1.2 V); not guaranteed at -1.5 V.	Better efficiency above 2.5 V logic, but unsuitable for 1.5 V GPIO direct drive.	Select when gate drive ≥ -2.5 V is available and lowest conduction loss is prioritized.
DMN2011LFG-7	Same ChipFET® package, but N-channel with -20 V rating and 0.019 Ω R_DS(on); requires high-side driver.	Enables lower R_DS(on) in high-current paths but adds complexity and cost for level shifting.	Select only if system already includes gate driver infrastructure and > -8 V blocking is required.

Compared with SI5499DC-T1-E3, Si5403DC-T1-E3 offers lower on-resistance but lacks guaranteed 1.5 V operation, while DMN2011LFG-7 provides superior R_DS(on) at the cost of added gate-drive circuitry - making SI5499DC-T1-E3 the optimal choice for space-constrained, ultra-low-voltage portable designs requiring zero external components.

Availability

SI5499DC-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C power delivery switches, wireless earbud charging cases, and medical wearable battery protection requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI5499DC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, high-reliability solutions for industrial and portable markets.

The Si5499DC belongs to Vishay's TrenchFET® Gen III P-channel family, engineered specifically for ultra-low-voltage load switching in battery-powered systems where 1.5–1.8 V logic compatibility and minimal PCB footprint are mandatory.

FAQ

What is the maximum continuous drain current for SI5499DC-T1-E3 at 70 °C case temperature?

The SI5499DC-T1-E3 supports -6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package thermal limits under steady-state conditions on a standard 1" × 1" FR4 board, and remains unchanged from its 25 °C rating due to the device's thermal derating profile.

Does SI5499DC-T1-E3 require a gate resistor for stable switching in a 1 MHz DC/DC converter?

SI5499DC-T1-E3 has a gate resistance R_g of 8 Ω and low Q_g (14 nC), making an external gate resistor optional in most 1 MHz applications. However, a 2–5 Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and ensure clean turn-on/turn-off transitions in high-noise environments.

Can SI5499DC-T1-E3 be used in reverse-polarity protection circuits without an external diode?

Yes, SI5499DC-T1-E3 can serve as a reverse-polarity protector using its intrinsic body diode. When oriented with source to input and drain to load, the body diode blocks reverse current while the MOSFET conducts forward current with low V_SD (-0.7 to -1.2 V), eliminating the need for a discrete Schottky diode and its associated voltage drop.

Is SI5499DC-T1-E3 compatible with lead-free reflow profiles per JEDEC J-STD-020?

Yes, SI5499DC-T1-E3 is qualified for lead-free reflow with a peak temperature of 260 °C, compliant with JEDEC J-STD-020 Class 3 moisture sensitivity level (MSL-1). The ChipFET® package is designed for standard SnAgCu profiles, and no special pre-bake or handling is required for MSL-1 devices.

What is the typical gate charge required to fully turn on SI5499DC-T1-E3 at V_GS = -4.5 V?

The typical total gate charge (Q_g) for SI5499DC-T1-E3 at V_GS = -4.5 V is 14 nC, as measured under V_DS = -4 V and I_D = -6 A conditions. This value includes both Q_gs (1.7 nC) and Q_gd (2.7 nC), and determines minimum gate-driver current needed for target switching speed in high-frequency applications.

SI5499DC-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 8 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 1290 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 6.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5499DC-T1-E3 FAQ

1.How can I place an order for SI5499DC-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5499DC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5499DC-T1-E3 reliable?

The price and inventory of SI5499DC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5499DC-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5499DC-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5499DC-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5499DC-T1-E3?

SI5499DC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5499DC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5499DC-T1-E3?

For technical support, including SI5499DC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5499DC-T1-E3 requirements.

6.How does Aetrix verify that SI5499DC-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5499DC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5499DC-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5499DC-T1-E3?

All SI5499DC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5499DC-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5499DC-T1-E3 part is unused and in its original packaging.

Return procedure for SI5499DC-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …