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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5853CDC-T1-E3

Name: SI5853CDC-T1-E3
Brand: Vishay Siliconix
SKU: SI5853CDC-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5853CDC-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5853CDC-T1-E3.pdf

Description:: MOSFET P-CH 20V 4A 1206-8

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Product details

Overview

SI5853CDC-T1-E3 from Vishay Siliconix is a P-channel 20 V (D-S) MOSFET with integrated trench Schottky diode in a 1206-8 ChipFET package. It delivers R_DS(on) = 0.104 Ω at V_GS = −4.5 V, supports −4 A continuous drain current (T_C = 25 °C), and features 0.46 V forward voltage at 0.5 A for the Schottky element - optimized for portable device charging switches requiring low-loss reverse polarity protection and fast switching.

For engineers reviewing the SI5853CDC-T1-E3 datasheet, SI5853CDC-T1-E3 pinout, SI5853CDC-T1-E3 application, or SI5853CDC-T1-E3 equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility, integrated Schottky V_F and I_F ratings, thermal resistance to ambient (R_thJA = 70 °C/W typical), and ChipFET package footprint constraints for space-constrained battery-powered designs.

Technical Context

This device integrates a P-channel Trench MOSFET and a monolithically co-packaged low-V_F Schottky diode sharing common Drain and Source terminals. Its gate threshold voltage (V_GS(th) = −0.45 to −1.0 V) enables direct interface with 1.8 V/2.5 V/3.3 V logic controllers without level shifting. The Schottky junction exhibits 0.381 V typical forward drop at 0.5 A and <32 mA reverse leakage at 20 V and 125 °C.

The MOSFET operates with total gate charge Q_g = 4.2 nC (at V_GS = −4.5 V), enabling efficient switching in high-frequency load-switching applications. Thermal design is constrained by R_thJF = 33 °C/W (MOSFET) and R_thJF = 40 °C/W (Schottky), with both elements sharing the same die substrate and thermal path to the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V maximum - defines safe blocking capability for USB OTG, power bank, and single-cell Li-ion systems.
R_DS(on)	0.104 Ω at V_GS = −4.5 V - determines conduction loss of ≤ 1.04 W at −3.2 A, critical for thermal management in sealed enclosures.
I_D (cont.)	−4 A at T_C = 25 °C - sets maximum steady-state load current before derating due to package thermal limits.
V_F (Schottky)	0.46 V at I_F = 0.5 A - minimizes forward conduction loss during reverse-current protection or diode-OR operation.
Q_g	4.2 nC at V_GS = −4.5 V - governs required gate driver current and switching transition time in PWM-controlled power paths.
R_thJA	70 °C/W typical - establishes worst-case junction temperature rise under natural convection on FR4 PCB, guiding heatsinking decisions.
V_GS(th)	−0.45 to −1.0 V - ensures reliable turn-on with standard logic-level outputs, eliminating need for external gate bias circuitry.

Pinout & Package

SI5853CDC-T1-E3 uses the surface-mount 1206-8 ChipFET package with an exposed drain pad for thermal and electrical connection. The package has no leads; terminals are soldered directly to copper pads on the PCB. Pin 1 (Gate) and Pin 2 (Source) are on the top side; Drain is the bottom-side exposed metal pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls MOSFET channel conduction; requires ≥1.8 V negative swing relative to Source to fully enhance.
2 (S)	Source	Common reference node for gate drive and Schottky cathode; connects to system ground or battery negative in high-side switch configurations.
Drain (exposed pad)	Drain / Schottky Anode	Shared terminal for MOSFET drain and Schottky anode; must be soldered to large copper pour for thermal dissipation and low-inductance current return path.

Key Features

Feature	Design Value
LITTLE FOOT® Plus integration	Monolithic co-packaging of P-MOSFET + Schottky eliminates discrete layout area and parasitic inductance between devices.
Trench Schottky diode	0.46 V V_F at 0.5 A enables >95 % efficiency in reverse-polarity protection circuits at low currents.
Logic-level gate drive	V_GS(th) down to −0.45 V allows direct control from microcontroller GPIOs without external level shifters or charge pumps.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for consumer electronics exports.
ChipFET thermal performance	R_thJF = 33 °C/W (MOSFET) enables 2.5 W dissipation with <85 °C junction rise above case - suitable for unheatsinked portable designs.

Applications

USB Power Delivery Switching	Li-ion Battery Protection
Use Scenario: Bidirectional power routing in dual-role USB-C ports where host/peripheral roles dynamically switch. IC Role / Device Role / Timing Role: P-channel MOSFET acts as high-side load switch; integrated Schottky prevents backfeed during role swap and clamps inductive transients. Use Value: Eliminates need for separate TVS and reverse-blocking diode, reducing BOM count by two components while maintaining <100 ns transient response.	Use Scenario: Reverse-current blocking in single-cell Li-ion battery packs during charging and standby. IC Role / Device Role / Timing Role: Functions as ideal diode replacement in battery protection FET stack, with Schottky providing fast freewheeling path during overcurrent shutdown. Use Value: 0.46 V V_F reduces standby power loss by 60 % vs. standard silicon diodes, extending shelf life in low-power IoT sensors.
Portable Device Charging Switch	Power Bank Output Regulation
Use Scenario: Controlled enable/disable of charging path from wall adapter to internal battery in smartphones and tablets. IC Role / Device Role / Timing Role: High-side P-MOSFET provides ON/OFF control; Schottky conducts reverse leakage during adapter removal to prevent voltage droop. Use Value: R_DS(on) = 0.104 Ω limits conduction loss to <1.1 W at 3.2 A, enabling compact thermal design without active cooling.	Use Scenario: Output stage of multi-cell power banks delivering regulated 5 V/9 V/12 V to USB-C devices. IC Role / Device Role / Timing Role: Acts as output OR-ing switch, selecting between battery and boost converter paths while preventing backflow. Use Value: Integrated Schottky's 1 A average forward rating supports sustained 5 V/3 A output without external diode, simplifying layout and improving EMI performance.

USB Power Delivery Switching

Li-ion Battery Protection

Use Scenario: Bidirectional power routing in dual-role USB-C ports where host/peripheral roles dynamically switch.

IC Role / Device Role / Timing Role: P-channel MOSFET acts as high-side load switch; integrated Schottky prevents backfeed during role swap and clamps inductive transients.

Use Value: Eliminates need for separate TVS and reverse-blocking diode, reducing BOM count by two components while maintaining <100 ns transient response.

Use Scenario: Reverse-current blocking in single-cell Li-ion battery packs during charging and standby.

IC Role / Device Role / Timing Role: Functions as ideal diode replacement in battery protection FET stack, with Schottky providing fast freewheeling path during overcurrent shutdown.

Use Value: 0.46 V V_F reduces standby power loss by 60 % vs. standard silicon diodes, extending shelf life in low-power IoT sensors.

Portable Device Charging Switch

Power Bank Output Regulation

Use Scenario: Controlled enable/disable of charging path from wall adapter to internal battery in smartphones and tablets.

IC Role / Device Role / Timing Role: High-side P-MOSFET provides ON/OFF control; Schottky conducts reverse leakage during adapter removal to prevent voltage droop.

Use Value: R_DS(on) = 0.104 Ω limits conduction loss to <1.1 W at 3.2 A, enabling compact thermal design without active cooling.

Use Scenario: Output stage of multi-cell power banks delivering regulated 5 V/9 V/12 V to USB-C devices.

IC Role / Device Role / Timing Role: Acts as output OR-ing switch, selecting between battery and boost converter paths while preventing backflow.

Use Value: Integrated Schottky's 1 A average forward rating supports sustained 5 V/3 A output without external diode, simplifying layout and improving EMI performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si5851CDC-T1-E3	R_DS(on) = 0.144 Ω at V_GS = −2.5 V; identical package and Schottky specs.	Higher gate threshold sensitivity - better suited for 2.5 V logic control but less margin at 1.8 V.	Select when gate drive voltage is limited to 2.5 V and lower switching speed is acceptable.
DMN2011LSD-13	P-channel only (no integrated Schottky); R_DS(on) = 0.115 Ω at V_GS = −4.5 V; same 1206-8 footprint.	Requires external Schottky for reverse protection - adds 0.5 mm² board area and 0.3 nH parasitic inductance.	Choose when Schottky function is implemented elsewhere or when higher reliability via discrete diode selection is prioritized.

Compared with SI5853CDC-T1-E3, Si5851CDC-T1-E3 trades lower gate drive voltage compatibility for slightly higher R_DS(on), while DMN2011LSD-13 offers identical MOSFET performance but shifts Schottky integration responsibility to the system designer - impacting layout density, EMI, and component count.

Availability

SI5853CDC-T1-E3 is available at Aetrix Electronics and suitable for portable device charging switches, USB-C power delivery routing, and Li-ion battery protection circuits requiring stable component supply, lead-free compliance, and validated thermal performance in ChipFET packages.

Supply support for SI5853CDC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The Si585x CDC family targets space-constrained portable power management, integrating trench MOSFETs and Schottky diodes to replace dual-component solutions in battery-connected systems.

FAQ

What is the maximum continuous drain current rating for SI5853CDC-T1-E3 at 70 °C case temperature?

The SI5853CDC-T1-E3 supports −3.4 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the 1206-8 ChipFET package under sustained power dissipation; operation above this current requires forced airflow or enhanced PCB copper area to maintain junction temperature below 150 °C.

Does SI5853CDC-T1-E3 require a gate resistor for stable switching in a 1 MHz load-switch application?

SI5853CDC-T1-E3 does not mandate an external gate resistor for stability, but a 1–10 Ω series resistor is recommended to dampen ringing caused by gate loop inductance and reduce EMI. With Q_g = 4.2 nC and typical gate resistance R_g = 6.2 Ω, the device achieves 15–25 ns turn-on delay at V_GEN = −4.5 V, making it suitable for 1 MHz operation when paired with a low-impedance driver.

Can SI5853CDC-T1-E3 be used in a high-side configuration with 1.8 V logic-level control?

Yes, SI5853CDC-T1-E3 can be used in high-side configuration with 1.8 V logic-level control because its V_GS(th) minimum is −0.45 V, ensuring full enhancement at V_GS = −1.8 V. However, R_DS(on) increases to 0.205 Ω at V_GS = −1.8 V, so conduction loss must be evaluated at the target load current - e.g., 1.33 W at −2.5 A.

What is the Schottky diode's reverse leakage current specification for SI5853CDC-T1-E3 at 20 V and 125 °C?

The SI5853CDC-T1-E3 Schottky diode exhibits a maximum reverse leakage current of 32 mA at V_R = 20 V and T_J = 125 °C, per the Schottky Specifications table. This value is critical for standby power budgeting in always-on battery systems, where even milliamp-level leakage impacts shelf life over months of storage.

Is the exposed drain pad of SI5853CDC-T1-E3 electrically isolated from other terminals?

No, the exposed drain pad of SI5853CDC-T1-E3 is not electrically isolated - it is the MOSFET's Drain terminal and also serves as the Schottky diode's Anode. It must be connected to the same net as the top-side Drain pin (shared internally) and should be soldered to a dedicated copper pour tied to the system's high-side power rail or ground return, depending on circuit topology.

SI5853CDC-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 104mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.5W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5853CDC-T1-E3 FAQ

1.How can I place an order for SI5853CDC-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5853CDC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5853CDC-T1-E3 reliable?

The price and inventory of SI5853CDC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5853CDC-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5853CDC-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5853CDC-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5853CDC-T1-E3?

SI5853CDC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5853CDC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5853CDC-T1-E3?

For technical support, including SI5853CDC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5853CDC-T1-E3 requirements.

6.How does Aetrix verify that SI5853CDC-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5853CDC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5853CDC-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5853CDC-T1-E3?

All SI5853CDC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5853CDC-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5853CDC-T1-E3 part is unused and in its original packaging.

Return procedure for SI5853CDC-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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