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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5853DDC-T1-E3

Name: SI5853DDC-T1-E3
Brand: Vishay Siliconix
SKU: SI5853DDC-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5853DDC-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5853DDC-T1-E3.pdf

Description:: MOSFET P-CH 20V 4A 1206-8

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Product details

Overview

SI5853DDC-T1-E3 from Vishay Siliconix is a P-channel 20 V (D-S) MOSFET with integrated trench Schottky diode in a 1206-8 ChipFET® package, delivering R_DS(on) = 0.105 Ω at V_GS = −4.5 V, 4.7 nC total gate charge, and 0.46 V forward voltage at 0.5 A - optimized for portable device charging switches requiring low-loss reverse polarity protection and fast switching.

For engineers reviewing the SI5853DDC-T1-E3 datasheet, SI5853DDC-T1-E3 pinout, SI5853DDC-T1-E3 application, or SI5853DDC-T1-E3 equivalent, this part serves as a compact, lead-free, halogen-free power switch where integrated Schottky functionality eliminates external diode placement, reduces board area, and simplifies thermal management in space-constrained battery-powered systems.

Technical Context

This device integrates a P-channel TrenchFET® MOSFET and a monolithically co-packaged low-V_f Schottky diode on a single die within a surface-mount 1206-8 ChipFET® package. Its gate threshold voltage (V_GS(th) = −0.4 to −1.0 V) enables logic-level drive from 1.8 V/2.5 V/4.5 V controllers, while its body diode reverse recovery time (t_rr = 15–30 ns) and Q_rr = 9–20 nC support high-frequency switching without significant commutation loss.

The dual-function structure supports bidirectional current handling: the MOSFET conducts source-to-drain under gate control, while the Schottky handles forward conduction during reverse-bias conditions. Thermal resistance values (R_thJA = 77–95 °C/W for MOSFET; 85–105 °C/W for Schottky) reflect FR4-mounted performance, and the exposed drain pad provides low-inductance, high-current path routing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage for reverse-polarity protection in 5 V–12 V portable power rails
R_DS(on)	0.105 Ω at V_GS = −4.5 V - Enables ≤130 mW conduction loss at 3.5 A continuous drain current
Q_g	4.7 nC at V_GS = −4.5 V - Supports efficient 1–2 MHz switching with minimal gate drive power
V_F (Schottky)	0.46 V at I_F = 0.5 A - Reduces forward drop by ~40% vs. standard silicon diodes, lowering heat generation
I_D (cont)	−4 A at T_C = 25 °C - Package-limited current rating suitable for USB-C PD and battery charger output stages
t_rr	15–30 ns - Fast body diode recovery minimizes shoot-through risk in synchronous rectification or flyback snubbing
R_thJF	33–40 °C/W (MOSFET) - Low junction-to-foot thermal resistance enables direct PCB copper pour cooling via exposed drain

Pinout & Package

Package: 1206-8 ChipFET® - 3.05 mm × 1.90 mm × 0.55 mm surface-mount package with exposed drain pad (pins 1–4 = Source, pins 5–8 = Drain), compatible with standard 1206 footprint but requiring specific pad layout per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1–4 (S)	Source	Common source connection for MOSFET channel; tied to system ground or negative rail in high-side switch configuration
5–8 (D)	Drain / Cathode	Exposed copper drain pad serving as both MOSFET drain and Schottky cathode; primary thermal and current path to PCB
G (pin 6 only)	Gate	Single gate terminal (pin 6); requires <10 Ω series resistor to suppress ringing due to low C_iss = 320 pF
K (pin 5 only)	Schottky Anode	Integrated Schottky anode (pin 5); connects to input supply side for reverse-blocking or freewheeling paths

Key Features

Feature	Design Value
LITTLE FOOT® Plus integration	Monolithic MOSFET + Schottky in single 1206-8 ChipFET® package eliminates discrete diode placement and saves ≥2.5 mm² board area
Trench Schottky architecture	0.381–0.46 V V_F at 0.5 A enables >95% efficiency in 1 A charging paths versus standard PN diodes
Logic-level gate drive	V_GS(th) range of −0.4 to −1.0 V allows direct interface with 1.8 V/2.5 V microcontrollers without level-shifting circuitry
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - qualified for consumer and medical portable equipment
Low Q_gd/Q_g ratio	Q_gd = 1.35 nC / Q_g = 4.7 nC → 28.7% - improves hard-switching EMI profile and reduces Miller-induced turn-on risk

Applications

USB Power Delivery Switch	Smartphone Battery Protection
Use Scenario: High-efficiency reverse-polarity and overvoltage protection at USB-C port input, before buck converter stage. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with integrated Schottky providing freewheel path during transient load dumps. Use Value: Eliminates need for external Schottky, reduces BOM count by one component, and cuts solution height to ≤0.55 mm for ultra-thin form factors.	Use Scenario: Charging path isolation between Li-ion battery and system load during USB or wireless charging events. IC Role / Device Role / Timing Role: Bidirectional switch enabling controlled charge/discharge directionality with body diode conducting during discharge and MOSFET conducting during charge. Use Value: 0.105 Ω R_DS(on) limits voltage drop to <370 mV at 3.5 A, preserving battery runtime and reducing thermal stress on adjacent ICs.
Wireless Earbud Charging Case	Portable Medical Monitor Power Path
Use Scenario: Input power selection between Qi receiver coil and micro-USB port in compact charging case PCB. IC Role / Device Role / Timing Role: Dual-input OR-ing switch using back-to-back P-MOSFET topology with integrated Schottky preventing cross-conduction. Use Value: 4.7 nC Q_g enables <1 µs transition time, supporting dynamic input arbitration without voltage glitches to sensitive analog front-end.	Use Scenario: Isolation of backup coin-cell supply from main LiPo during normal operation, with automatic switchover on main rail failure. IC Role / Device Role / Timing Role: Low-leakage (I_DSS = −1 µA at −20 V) P-MOSFET acting as ideal diode controller replacement with built-in reverse recovery mitigation. Use Value: Schottky V_F = 0.46 V ensures <10 mV dropout across backup path, maintaining ADC reference stability during brownout conditions.

USB Power Delivery Switch

Smartphone Battery Protection

Use Scenario: High-efficiency reverse-polarity and overvoltage protection at USB-C port input, before buck converter stage.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with integrated Schottky providing freewheel path during transient load dumps.

Use Value: Eliminates need for external Schottky, reduces BOM count by one component, and cuts solution height to ≤0.55 mm for ultra-thin form factors.

Use Scenario: Charging path isolation between Li-ion battery and system load during USB or wireless charging events.

IC Role / Device Role / Timing Role: Bidirectional switch enabling controlled charge/discharge directionality with body diode conducting during discharge and MOSFET conducting during charge.

Use Value: 0.105 Ω R_DS(on) limits voltage drop to <370 mV at 3.5 A, preserving battery runtime and reducing thermal stress on adjacent ICs.

Wireless Earbud Charging Case

Portable Medical Monitor Power Path

Use Scenario: Input power selection between Qi receiver coil and micro-USB port in compact charging case PCB.

IC Role / Device Role / Timing Role: Dual-input OR-ing switch using back-to-back P-MOSFET topology with integrated Schottky preventing cross-conduction.

Use Value: 4.7 nC Q_g enables <1 µs transition time, supporting dynamic input arbitration without voltage glitches to sensitive analog front-end.

Use Scenario: Isolation of backup coin-cell supply from main LiPo during normal operation, with automatic switchover on main rail failure.

IC Role / Device Role / Timing Role: Low-leakage (I_DSS = −1 µA at −20 V) P-MOSFET acting as ideal diode controller replacement with built-in reverse recovery mitigation.

Use Value: Schottky V_F = 0.46 V ensures <10 mV dropout across backup path, maintaining ADC reference stability during brownout conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si5851DDC-T1-E3	R_DS(on) = 0.143 Ω at V_GS = −2.5 V; same package and Schottky specs	Higher threshold sensitivity - better for 2.5 V logic control but higher conduction loss at 3.5 A	Select when gate drive voltage is limited to 2.5 V and lower Q_g is not required
DMN2011LFG-7	P-channel only (no integrated Schottky); R_DS(on) = 0.115 Ω at −4.5 V; SOT-23-6 package	Requires external Schottky diode; smaller footprint but higher assembly cost and thermal impedance (R_thJA = 150 °C/W)	Select when board space is critical and discrete diode placement is acceptable

Compared with SI5853DDC-T1-E3, Si5851DDC-T1-E3 trades higher on-resistance for improved low-voltage gate responsiveness, while DMN2011LFG-7 sacrifices integration and thermal performance for package miniaturization - making SI5853DDC-T1-E3 optimal for balanced efficiency, size, and ease-of-use in portable power switching.

Availability

SI5853DDC-T1-E3 is available at Aetrix Electronics and suitable for USB-C PD adapters, smartphone battery management systems, wireless earbud charging cases, and portable medical monitor power paths requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SI5853DDC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI5853DDC-T1-E3 belongs to Vishay's LITTLE FOOT® Plus Schottky Power MOSFET product line, designed specifically for portable electronics requiring ultra-compact, integrated power switching solutions with minimized conduction and switching losses.

FAQ

What is the maximum continuous drain current rating for SI5853DDC-T1-E3 at 70 °C case temperature?

The SI5853DDC-T1-E3 supports −3.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package thermal limits under typical surface-mount conditions on FR4 board, and must be derated linearly above 70 °C per the published current derating curve. The SI5853DDC-T1-E3 maintains safe operation up to T_J = 150 °C with appropriate PCB copper area.

Does SI5853DDC-T1-E3 include both MOSFET and Schottky functions in one die or separate dies?

The SI5853DDC-T1-E3 integrates a P-channel TrenchFET® MOSFET and a trench Schottky diode on a single silicon die within the 1206-8 ChipFET® package. This monolithic integration ensures matched thermal behavior, precise timing alignment between switching and freewheeling paths, and eliminates interconnect parasitics that would occur with discrete co-packaging. The SI5853DDC-T1-E3 datasheet confirms shared junction temperature and co-located terminals.

Can SI5853DDC-T1-E3 be used in a synchronous rectifier configuration?

No - the SI5853DDC-T1-E3 is a P-channel MOSFET with integrated Schottky diode, not a synchronous rectifier controller or N-channel device optimized for low-side switching. Its gate threshold and drive requirements are suited for high-side switch applications, and its body diode is intentionally enhanced for low V_F, not optimized for controlled turn-off timing. For synchronous rectification, dedicated N-channel drivers or integrated SR controllers should be used instead of SI5853DDC-T1-E3.

What is the recommended PCB pad layout for SI5853DDC-T1-E3?

Vishay Application Note 826 specifies the recommended minimum pads for the 1206-8 ChipFET® package used by SI5853DDC-T1-E3: 2.357 mm × 0.914 mm for drain pads (pins 5–8), 0.650 mm × 0.559 mm for source pads (pins 1–4), and 0.406 mm × 0.244 mm for gate pad (pin 6). Thermal relief to internal ground planes is discouraged; instead, solid copper pours under the exposed drain pad are required to achieve rated R_thJA and power dissipation.

Is SI5853DDC-T1-E3 suitable for automotive applications?

The SI5853DDC-T1-E3 is not AEC-Q200 qualified and lacks automotive-grade screening, temperature range extension beyond −55 °C to +150 °C, or PPAP documentation. While its absolute ratings meet some automotive sub-system requirements (e.g., infotainment USB ports), Vishay positions the SI5853DDC-T1-E3 explicitly for portable consumer electronics. For automotive use, SI5853DDC-T1-E3 must undergo full qualification per customer-specific requirements - no automotive compliance is claimed in the official datasheet.

SI5853DDC-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 320 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.3W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5853DDC-T1-E3 FAQ

1.How can I place an order for SI5853DDC-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5853DDC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5853DDC-T1-E3 reliable?

The price and inventory of SI5853DDC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5853DDC-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI5853DDC-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5853DDC-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5853DDC-T1-E3?

SI5853DDC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5853DDC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5853DDC-T1-E3?

For technical support, including SI5853DDC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5853DDC-T1-E3 requirements.

6.How does Aetrix verify that SI5853DDC-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI5853DDC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5853DDC-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI5853DDC-T1-E3?

All SI5853DDC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5853DDC-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5853DDC-T1-E3 part is unused and in its original packaging.

Return procedure for SI5853DDC-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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