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Vishay Siliconix SI5855CDC-T1-E3
- Part No.:
- SI5855CDC-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
SI5855CDC-T1-E3.pdf
- Description:
- MOSFET P-CH 20V 3.7A 1206-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,657
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Product details
Overview
SI5855CDC-T1-E3 from Vishay Siliconix is a P-channel 20 V (D-S) MOSFET with integrated ultra-low VF Schottky diode in a 1206-8 ChipFET® package. It delivers RDS(on) = 0.144 Ω at VGS = −4.5 V, −3.7 A continuous drain current (TC = 25 °C), and 0.375 V forward voltage at 1 A for portable charging switch applications.
For engineers reviewing the SI5855CDC-T1-E3 datasheet, SI5855CDC-T1-E3 pinout, SI5855CDC-T1-E3 application, or SI5855CDC-T1-E3 equivalent, this device is selected for low-loss reverse-polarity protection, battery charge path control, and compact DC-DC output rectification where space-constrained layouts demand monolithic MOSFET + Schottky integration.
Technical Context
This device integrates two independent semiconductor functions in one die: a trench P-channel MOSFET and a discrete Schottky diode sharing common Drain and Source terminals. The MOSFET operates with gate threshold voltage VGS(th) = −0.45 to −1.0 V and exhibits 4.1 nC total gate charge at VGS = −4.5 V, enabling fast switching in high-frequency load-switching circuits.
The co-packaged Schottky provides 20 V reverse voltage rating, 1 A average forward current, and 0.375 V typical forward drop at 1 A - optimized for low conduction loss in bidirectional current paths. Thermal resistance RthJA is 82 °C/W (MOSFET) and 54 °C/W (Schottky), reflecting distinct thermal pathways within the ChipFET® structure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for reverse-polarity protection and high-side switching in 5–12 V systems. |
| RDS(on) | 0.144 Ω at VGS = −4.5 V - Enables ≤0.33 W conduction loss at 3.3 A, critical for thermally constrained portable PCBs. |
| ID (cont.) | −3.7 A at TC = 25 °C - Supports sustained load currents in USB-C PD and power bank charge switches without external heatsinking. |
| VF (Schottky) | 0.375 V at IF = 1 A - Reduces forward drop by ~40% vs. standard silicon diodes, improving efficiency in synchronous rectifier alternatives. |
| Qg | 4.1 nC at VGS = −4.5 V - Allows clean turn-on/turn-off with low-drive-strength controllers, minimizing gate drive power in battery-powered systems. |
| RthJA (MOSFET) | 82 °C/W - Defines thermal derating slope: power dissipation drops to 1.3 W at TA = 25 °C, limiting max ambient operating temperature. |
| VGS(th) | −0.45 to −1.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
Pinout & Package
Package: 1206-8 ChipFET® - surface-mount, leadless, thermally enhanced footprint with exposed drain pad (4 mm² thermal pad area). Dimensions: 3.05 mm × 1.90 mm × 0.95 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | MOSFET Drain / Schottky Cathode | Common high-current terminal; electrically and thermally connected to exposed copper pad for low-inductance, low-RthJF heat transfer. |
| 5, 6 (Source) | MOSFET Source / Schottky Anode | Return path for both MOSFET conduction and Schottky forward current; tied to system ground or battery negative in charging switches. |
| 7, 8 (Gate) | MOSFET Gate Control | Logic-level input; requires no level-shifting for 3.3 V microcontrollers; gate capacitance Ciss = 276 pF enables <20 ns switching with 1 Ω driver. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky Diode | 0.375 V VF at 1 A eliminates need for external diode in OR-ing and reverse-current blocking, saving 2–3 mm² board area. |
| LITTLE FOOT® Plus Construction | Leadless 1206-8 ChipFET® package achieves 35 °C/W junction-to-foot thermal resistance - 25% lower than comparable SO-8 MOSFETs. |
| Ultra-Low Threshold Voltage | VGS(th) down to −0.45 V ensures full enhancement at 3.3 V logic, enabling direct MCU GPIO control without gate drivers. |
| Halogen-Free & RoHS Compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports green manufacturing and export compliance for consumer electronics. |
| Low Qgd/Qg Ratio | Qgd = 1.0 nC / Qg = 4.1 nC = 0.24 - improves hard-switching EMI performance and reduces Miller-induced shoot-through risk. |
Applications
| USB Power Delivery Charge Switch | Reverse-Polarity Protection |
|---|---|
|
Use Scenario: Bidirectional 5–20 V power routing between USB-C port and internal Li-ion battery during charging and discharging. IC Role / Device Role / Timing Role: P-channel MOSFET acts as high-side load switch; integrated Schottky conducts reverse current during battery discharge while blocking reverse feed during charging. Use Value: Eliminates discrete diode + MOSFET solution, reducing BOM count by 2 components and conduction loss by 0.25 W at 2 A. |
Use Scenario: Preventing damage when users incorrectly connect external 5–12 V adapters with reversed polarity to embedded systems. IC Role / Device Role / Timing Role: MOSFET blocks reverse current flow; Schottky provides low-loss forward path when polarity is correct - no active control needed. Use Value: Achieves <10 mΩ effective forward resistance (RDS(on) + VF/I) vs. >100 mΩ of discrete solutions, cutting voltage drop by 80% at 1 A. |
| Power Bank Output Stage | Low-Voltage DC-DC Synchronous Rectifier |
|
Use Scenario: Enabling/disabling regulated 5 V output from multi-cell power bank to USB-A ports under firmware control. IC Role / Device Role / Timing Role: Logic-level gate-driven high-side switch with fast 17 ns rise time and 16 ns fall time for responsive enable/disable transitions. Use Value: Supports <100 µs response time for overcurrent shutdown, meeting USB Battery Charging v1.2 fault recovery timing requirements. |
Use Scenario: Replacing Schottky diode in buck converter output stage for 3.3 V/2 A rail in wearables and IoT sensors. IC Role / Device Role / Timing Role: MOSFET replaces diode during synchronous rectification phase; Schottky handles body diode conduction during dead-time. Use Value: Reduces output stage losses by 35% vs. discrete 20 V Schottky (e.g., RB050M-30), extending runtime by 8–12 minutes per charge cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET + Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si5853ADC-T1-E3 | Same 1206-8 ChipFET® package but N-channel; VDS = +20 V, RDS(on) = 0.095 Ω @ VGS = +4.5 V; no integrated Schottky. | Requires high-side driver or bootstrap circuit; cannot replace SI5855CDC-T1-E3 in low-side or reverse-protection roles without layout change. | Select only if N-channel topology is fixed and discrete Schottky is acceptable; not a drop-in replacement. |
| DMN2011UFD-7 | 20 V P-channel MOSFET in U-DFN2020-6; RDS(on) = 0.125 Ω @ VGS = −4.5 V; no integrated diode; 0.65 mm pitch, smaller footprint. | Lacks Schottky function - requires external diode for reverse-current handling; thermal resistance RthJA = 125 °C/W limits power handling. | Choose when board space is tighter than 3.05 × 1.90 mm and Schottky integration is unnecessary; verify thermal margin at 3 A. |
Compared with SI5855CDC-T1-E3, Si5853ADC-T1-E3 shifts topology to N-channel with higher drive complexity and no diode integration, while DMN2011UFD-7 trades Schottky functionality and thermal performance for smaller size - neither offers the same monolithic MOSFET+Schottky value in space- and efficiency-critical portable power switches.
Availability
SI5855CDC-T1-E3 is available at Aetrix Electronics and suitable for USB-C power delivery charge switches, reverse-polarity protection circuits, and power bank output stages requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for SI5855CDC-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures high-performance discrete semiconductors, including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, miniaturization, and reliability for consumer, computing, and industrial markets.
The SI5855CDC-T1-E3 belongs to Vishay's LITTLE FOOT® Plus Power MOSFET family, engineered specifically for portable electronics where integrated Schottky diodes reduce board area and improve power conversion efficiency in battery-charging and protection circuits.
FAQ
What is the maximum continuous drain current for SI5855CDC-T1-E3 at 70 °C case temperature?
The SI5855CDC-T1-E3 supports −3.0 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the 1206-8 ChipFET® package; operation above this current requires thermal analysis of PCB copper area and ambient conditions. The SI5855CDC-T1-E3 must be mounted on FR4 with recommended minimum pads per Application Note 826 to achieve rated performance.
Does SI5855CDC-T1-E3 include both MOSFET and Schottky functions in one die or separate dies?
The SI5855CDC-T1-E3 integrates a trench P-channel MOSFET and a discrete Schottky diode in a single monolithic chip within the 1206-8 ChipFET® package. They share common Drain and Source terminals but operate independently - the MOSFET controls main current flow via gate voltage, while the Schottky conducts forward current with 0.375 V drop at 1 A. This co-packaging is confirmed in the "P-Channel 20 V (D-S) MOSFET with Schottky Diode" product definition and MOSFET/Schottky summary tables.
What is the gate threshold voltage range for SI5855CDC-T1-E3, and how does it affect logic-level drive?
The SI5855CDC-T1-E3 has a gate threshold voltage VGS(th) range of −0.45 V to −1.0 V at ID = −250 µA, enabling full enhancement with 3.3 V or 5 V logic-level signals. At VGS = −3.3 V, RDS(on) is typically 0.165 Ω - well within usable range for low-power switching. This allows direct connection to MCU GPIO pins without level shifters, a key design advantage confirmed in the Transfer Characteristics graph and Static Specifications table.
Can SI5855CDC-T1-E3 be used in place of a discrete MOSFET + Schottky diode pair in a USB OTG power switch?
Yes - the SI5855CDC-T1-E3 is explicitly designed for this use case, as stated in its Applications section ("Charging Switch for Portable Devices"). Its integrated Schottky diode provides 0.375 V forward drop at 1 A and 20 V reverse rating, eliminating the need for an external diode while maintaining identical electrical behavior. Layout changes are minimal: the 1206-8 footprint replaces two 0805 or SOT-23 devices, reducing parasitic inductance and improving EMI performance in USB OTG paths.
What is the thermal resistance from junction to ambient (RthJA) for the MOSFET portion of SI5855CDC-T1-E3?
The MOSFET portion of SI5855CDC-T1-E3 has a typical junction-to-ambient thermal resistance RthJA of 82 °C/W and a maximum of 99 °C/W under standard surface-mount conditions on FR4 board, per the Thermal Resistance Ratings table. This value assumes the recommended minimum pad layout from Application Note 826; using less copper increases RthJA and reduces allowable power dissipation. The SI5855CDC-T1-E3's RthJA is 20% lower than typical SO-8 MOSFETs, supporting higher current density in compact designs.
SI5855CDC-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 144mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.8 nC @ 5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 276 pF @ 10 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.3W (Ta), 2.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 1206-8 ChipFET™
SI5855CDC-T1-E3 FAQ
1.How can I place an order for SI5855CDC-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI5855CDC-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI5855CDC-T1-E3 reliable?
The price and inventory of SI5855CDC-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5855CDC-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI5855CDC-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5855CDC-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI5855CDC-T1-E3?
SI5855CDC-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI5855CDC-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI5855CDC-T1-E3?
For technical support, including SI5855CDC-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5855CDC-T1-E3 requirements.
6.How does Aetrix verify that SI5855CDC-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI5855CDC-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5855CDC-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI5855CDC-T1-E3?
All SI5855CDC-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5855CDC-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI5855CDC-T1-E3 part is unused and in its original packaging.
Return procedure for SI5855CDC-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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