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Vishay Siliconix SI5913DC-T1-GE3
- Part No.:
- SI5913DC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
SI5913DC-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 4A 1206-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,153
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Product details
Overview
SI5913DC-T1-GE3 from Vishay Siliconix is a P-channel 20 V (D-S) MOSFET integrated with a monolithic Schottky diode in a ChipFET® package, delivering RDS(on) = 0.084 Ω at VGS = −10 V, Qg = 4 nC (typ.), and VF = 0.5 V (at 1 A), optimized for asynchronous rectification in compact DC/DC converters.
For engineers reviewing the SI5913DC-T1-GE3 datasheet, SI5913DC-T1-GE3 pinout, SI5913DC-T1-GE3 application, or SI5913DC-T1-GE3 equivalent, this device offers verified performance in high-efficiency, space-constrained power conversion where low gate charge, integrated body diode replacement, and halogen-free compliance are critical selection criteria.
Technical Context
This device integrates a P-channel enhancement-mode MOSFET and a Schottky diode on a single die within a 1206-8 ChipFET® package. Its dual-function structure enables synchronous-like efficiency in asynchronous topologies without requiring external diode placement or timing control circuitry.
The MOSFET operates with VGS(th) = −0.6 to −1.5 V, supports continuous drain current up to −4 A at TC = 25 °C, and features Ciss = 330 pF and Coss = 80 pF - parameters directly enabling fast switching with minimal drive loss in buck converter freewheeling paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in industrial DC/DC designs. |
| RDS(on) | 0.084 Ω at VGS = −10 V - Enables ≤0.3 W conduction loss at 3.7 A, reducing thermal load in unheatsinked PCB layouts. |
| Qg | 4 nC at VGS = −4.5 V - Low gate charge allows efficient drive from low-current controllers, minimizing driver stage complexity. |
| VF (Schottky) | 0.5 V at IF = 1 A - Reduces forward drop by ~0.4 V versus standard MOSFET body diodes, improving light-load efficiency. |
| TJ Range | −55 to +150 °C - Supports operation in extended-temperature environments such as automotive under-hood or industrial motor drives. |
| RthJA | 74 °C/W (max) - Defines thermal derating envelope for surface-mount use on 1" × 1" FR4, guiding heatsinking decisions. |
| ID (cont.) | −3.7 A at TA = 25 °C - Package-limited continuous current rating suitable for sub-10 W point-of-load converters. |
Pinout & Package
SI5913DC-T1-GE3 uses the 1206-8 ChipFET® package - a leadless, surface-mount, thermally enhanced footprint measuring 3.05 mm × 1.90 mm × 1.05 mm (L × W × H), with exposed drain pads on the bottom for direct thermal coupling to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | MOSFET Drain / Schottky Cathode | Common high-current path for both MOSFET conduction and Schottky forward current; electrically and thermally tied to exposed copper pad. |
| 5, 6 (Source) | MOSFET Source / Schottky Anode | Return node for MOSFET channel and Schottky anode; forms low-inductance loop with drain when placed adjacent on PCB. |
| 7, 8 (Gate) | MOSFET Gate Control | High-impedance input controlling channel turn-on; requires < ±12 V rating and benefits from local gate resistor for EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus integration | Combines MOSFET + Schottky in one 1206-8 footprint - eliminates discrete diode placement, reduces BOM count, and shrinks layout area by ≥30% vs. dual-component solution. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - ensures environmental compliance for global industrial and computing shipments without material declaration overhead. |
| Low VF Schottky (0.5 V @ 1 A) | Reduces freewheeling conduction loss by >50% versus typical MOSFET body diode (VSD ≈ 1.0 V), directly improving light-load efficiency in buck converters. |
| Fast trr = 23–35 ns | Minimizes reverse recovery energy loss during hard-switching transitions, lowering EMI generation and reducing snubber requirements. |
| Exposed drain thermal pad | Enables direct thermal path to inner-layer copper planes - achieves RthJF = 32 °C/W (typ.), supporting higher power density than standard SO-8 equivalents. |
Applications
| HDD Power Supply | Industrial DC/DC Converter |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 5 V/3.3 V buck converters powering HDD spindle and servo circuits. IC Role / Device Role / Timing Role: P-channel MOSFET + integrated Schottky replaces external diode and provides low-loss freewheeling path during high-side switch off-time. Use Value: Achieves >92% efficiency at 2 A load with no gate drive timing complexity, meeting tight thermal budgets inside sealed HDD enclosures. |
Use Scenario: Input-stage protection and output rectification in isolated 24 V to 5 V flyback supplies for PLC I/O modules. IC Role / Device Role / Timing Role: Acts as active OR-ing switch and freewheeling element, leveraging integrated Schottky to reduce voltage drop across output rectifier. Use Value: Eliminates need for external Schottky and associated layout routing, cutting bill-of-materials cost while maintaining 150 °C junction capability. |
| Point-of-Load Regulator | USB-C Power Delivery Sink |
Use Scenario: Compact 12 V to 1.2 V buck converter supplying FPGA core voltage in edge AI accelerators. IC Role / Device Role / Timing Role: Asynchronous rectifier operating in discontinuous conduction mode (DCM), where low Qg minimizes switching loss impact. Use Value: Delivers 3.7 A continuous current in < 9 mm² footprint, enabling dense multi-rail power delivery without thermal throttling. |
Use Scenario: Output rectification in 20 V USB-C PD sink adapters with foldback overvoltage protection. IC Role / Device Role / Timing Role: Dual-role component serving as both MOSFET switch and clamp diode during transient events, leveraging monolithic integration for reliability. Use Value: Withstands 20 V reverse voltage (VKA) and delivers 2 A average Schottky forward current, meeting USB-IF ESD and surge immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET + Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | Higher RDS(on) = 0.12 Ω at −10 V; same 1206-8 package; lacks Schottky integration - requires external diode. | Requires additional board area and layout effort for discrete Schottky; suited only when integrated Schottky is not required. | Select if lower gate charge (Qg = 3.5 nC) is prioritized over integrated diode functionality and thermal performance. |
| DMN2011UFD-7 | N-channel 20 V MOSFET (RDS(on) = 0.011 Ω); no integrated diode; SOT-23-6 package; requires high-side gate driver. | Not functionally equivalent - cannot replace SI5913DC-T1-GE3 without topology change (e.g., synchronous buck redesign). | Consider only for new designs where N-channel topology and driver availability justify re-architecting the power stage. |
Compared with Si7851DP-T1-GE3 and DMN2011UFD-7, SI5913DC-T1-GE3 uniquely combines P-channel logic-level drive, integrated Schottky, and ChipFET® thermal performance - making it the only drop-in option for space-constrained asynchronous rectifiers needing zero external diode components.
Availability
SI5913DC-T1-GE3 is available at Aetrix Electronics and suitable for HDD power supplies, industrial DC/DC converters, and point-of-load regulators requiring stable component supply, halogen-free compliance, and compact thermal management.
Supply support for SI5913DC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI5913DC-T1-GE3 belongs to Vishay's LITTLE FOOT® Plus Schottky Power MOSFET product line, designed specifically for high-density, low-voltage DC/DC conversion where integrated diode functionality and thermal performance are essential.
FAQ
What is the maximum continuous drain current rating for SI5913DC-T1-GE3 at ambient temperature?
The SI5913DC-T1-GE3 has a continuous drain current rating of −3.7 A at TA = 25 °C on a 1" × 1" FR4 board. This value is package-limited and decreases to −2.9 A at TA = 70 °C due to thermal derating. The rating reflects real-world surface-mount conditions, not ideal heatsinked operation.
Does SI5913DC-T1-GE3 include a Schottky diode, and what are its key electrical parameters?
Yes, SI5913DC-T1-GE3 integrates a monolithic Schottky diode rated for 20 V reverse voltage (VKA) and 2 A average forward current (IF). Its forward voltage is 0.5 V at 1 A and 0.43 V at 125 °C, with leakage current ≤0.10 mA at 20 V and 25 °C - all confirmed in the Vishay datasheet revision B.
What is the gate threshold voltage range for SI5913DC-T1-GE3, and how does it affect drive requirements?
The SI5913DC-T1-GE3 has a gate-source threshold voltage (VGS(th)) ranging from −0.6 V to −1.5 V at ID = −250 µA. This logic-level P-channel characteristic allows full enhancement with −4.5 V gate drive, enabling direct interface with standard 3.3 V/5 V microcontroller GPIOs without level-shifting circuitry.
Can SI5913DC-T1-GE3 be used in synchronous rectification topologies?
No - SI5913DC-T1-GE3 is designed for asynchronous rectification. Its integrated Schottky diode is not controllable and cannot be actively turned off like a synchronous MOSFET. For synchronous operation, a discrete N-channel or P-channel MOSFET without integrated diode (e.g., Si7851DP-T1-GE3) must be used with precise gate timing control.
What is the thermal resistance from junction to ambient (RthJA) for SI5913DC-T1-GE3, and how is it measured?
The maximum RthJA for SI5913DC-T1-GE3 is 74 °C/W for the MOSFET section and 95 °C/W for the Schottky section, both measured under t ≤ 5 s pulse conditions on a 1" × 1" FR4 board. These values define worst-case thermal limits for transient power dissipation and guide PCB copper area allocation.
SI5913DC-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 84mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 330 pF @ 10 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.7W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 1206-8 ChipFET™
SI5913DC-T1-GE3 FAQ
1.How can I place an order for SI5913DC-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI5913DC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI5913DC-T1-GE3 reliable?
The price and inventory of SI5913DC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5913DC-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI5913DC-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5913DC-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI5913DC-T1-GE3?
SI5913DC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI5913DC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI5913DC-T1-GE3?
For technical support, including SI5913DC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5913DC-T1-GE3 requirements.
6.How does Aetrix verify that SI5913DC-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI5913DC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5913DC-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI5913DC-T1-GE3?
All SI5913DC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5913DC-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI5913DC-T1-GE3 part is unused and in its original packaging.
Return procedure for SI5913DC-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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