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Vishay Siliconix SI6415DQ-T1-BE3
- Part No.:
- SI6415DQ-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
SI6415DQ-T1-BE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,680
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Product details
Overview
SI6415DQ-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in TSSOP-8 package, designed for high-efficiency load switching and reverse polarity protection. It features -30 V VDS, 0.019 Ω RDS(on) at VGS = -10 V, ±6.5 A continuous drain current, and integrated body diode with -0.75 V forward voltage. It is commonly used in USB power switches and battery-powered system back-to-back FET configurations.
For engineers reviewing the SI6415DQ-T1-BE3 datasheet, SI6415DQ-T1-BE3 pinout, SI6415DQ-T1-BE3 application, or SI6415DQ-T1-BE3 equivalent, key selection criteria include verified RDS(on) at -4.5 V gate drive, thermal resistance (RthJA = 83 °C/W), source-terminal paralleling requirements, and halogen-free RoHS-compliant construction per JEDEC MO-153.
Technical Context
This device uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching in a surface-mount TSSOP-8 package. Its dual-source configuration (pins 2, 3, 6, 7) reduces conduction losses and improves thermal spreading across the PCB copper plane.
The gate threshold voltage of -1.0 V ensures reliable turn-on with standard logic-level control signals, while the total gate charge of 47–70 nC supports efficient PWM operation in DC-DC synchronous rectifiers and hot-swap circuits without excessive driver loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for reverse-polarity protection in 24 V industrial systems |
| RDS(on) @ VGS = -10 V | 0.019 Ω - Enables ≤120 mW conduction loss at 6.5 A, suitable for compact thermal design |
| RDS(on) @ VGS = -4.5 V | 0.030 Ω - Confirmed operation with 5 V microcontroller GPIOs without level-shifting |
| ID (continuous) | ±6.5 A @ TA = 25 °C - Supports sustained load currents in portable power banks and e-metering front-ends |
| RthJA | 83 °C/W - Validated on FR4 board; requires minimum 1-in² copper pour under drain pads for full rating |
| Qg | 47–70 nC - Determines gate driver sizing for <50 ns switching transitions in 100 kHz DC-DC stages |
| VGS(th) | -1.0 V - Ensures guaranteed turn-on with 3.3 V logic, critical for low-voltage MCU-controlled power rails |
Pinout & Package
TSSOP-8 package per JEDEC MO-153, 3.0 mm × 6.4 mm footprint, 1.1 mm max height, leadframe-mounted die with exposed drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 8 | Drain | Common high-current output node; pins 1/5/8 must be connected to same net for lowest RDS(on) and thermal path |
| 2, 3, 6, 7 | Source | Paralleled low-impedance return path; all four pins require equal-length routing to avoid current imbalance |
| 4 | Gate | Control input; requires 100 Ω series resistor near IC to damp ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.019 Ω RDS(on) in TSSOP-8 - 35 % lower than comparable SOIC-8 P-channel MOSFETs at same voltage rating |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and JEDEC J-STD-020 reflow standards for lead-free assembly without brominated flame retardants |
| Integrated body diode | VSD = -0.75 V @ -1.5 A - Enables bidirectional current handling in OR-ing and reverse-current blocking applications |
| Low Qgd/Qg ratio | 8/47 ≈ 0.17 - Reduces Miller-induced shoot-through risk in synchronous buck high-side configurations |
Applications
| USB Power Switch | Battery Reverse Polarity Protection |
|---|---|
Use Scenario: Selective power delivery to downstream USB peripherals with overcurrent detection. IC Role / Device Role / Timing Role: P-channel high-side switch controlling VBUS path; gate driven by dedicated USB controller or microcontroller GPIO. Use Value: 0.030 Ω RDS(on) at -4.5 V enables <100 mV drop at 3.3 A, preserving USB 2.0 voltage compliance. | Use Scenario: Preventing damage when Li-ion battery packs are inserted backward into portable medical devices. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair with SI6415DQ-T1-BE3 as primary blocking element. Use Value: -30 V VDS withstands 2-cell stack transients; low gate threshold allows direct MCU enable control without external bias. |
| Hot-Swap Controller Interface | Industrial 24 V DC Input Protection |
Use Scenario: Inrush limiting and fault isolation in modular PLC I/O modules with live-insertion capability. IC Role / Device Role / Timing Role: Load switch controlled by LTC4215 or similar hot-swap controller via gate resistor network. Use Value: 70 nC total gate charge permits precise slew-rate control using standard 10 kΩ gate resistor, meeting Class 2 hot-swap timing specs. | Use Scenario: Protecting programmable logic controllers from field-wiring errors in factory automation cabinets. IC Role / Device Role / Timing Role: Primary reverse-voltage blocking element upstream of DC-DC converters and ESD protection arrays. Use Value: 83 °C/W RthJA allows operation at full 6.5 A with only 2-in² internal copper, eliminating need for heatsinks in DIN-rail enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si6411DQ-T1-BE3 | Same package, -20 V VDS, 0.012 Ω RDS(on) @ -4.5 V | Limited to 12 V systems; higher leakage at elevated temperature | Select when operating voltage ≤15 V and ultra-low RDS(on) is prioritized over voltage margin |
| DMN3026LFG-7 | 30 V, 0.025 Ω @ -4.5 V, SOT-23-6 package, higher RthJA (150 °C/W) | Lower current rating (4.5 A); unsuitable for >2 A continuous loads without derating | Choose for space-constrained designs where TSSOP-8 footprint is unavailable and thermal budget permits |
Compared with Si6411DQ-T1-BE3 and DMN3026LFG-7, SI6415DQ-T1-BE3 uniquely balances -30 V rating, 0.030 Ω RDS(on) at logic-level drive, and 83 °C/W thermal resistance - making it optimal for 24 V industrial hot-swap and USB-C PD sink applications requiring both voltage headroom and thermal efficiency.
Availability
SI6415DQ-T1-BE3 is available at Aetrix Electronics and suitable for USB power delivery systems, battery management units, industrial PLC input protection, and portable medical equipment requiring stable component supply across multi-year production cycles.
Supply support for SI6415DQ-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, thermally optimized packaging.
The LITTLE FOOT® TSSOP-8 product line was developed to deliver SOIC-level power handling in half the PCB area and profile - specifically targeting space-constrained, thermally demanding applications in computing, communications, and industrial controls.
FAQ
What is the maximum continuous drain current for SI6415DQ-T1-BE3 at 70 °C ambient temperature?
The SI6415DQ-T1-BE3 supports ±5.2 A continuous drain current at TA = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its 83 °C/W junction-to-ambient resistance on standard FR4 PCBs. For sustained 6.5 A operation, active cooling or enhanced copper pour is required. The SI6415DQ-T1-BE3 datasheet confirms this value under Note "a" for continuous drain current ratings.
Does SI6415DQ-T1-BE3 support gate drive from a 3.3 V microcontroller without level shifting?
Yes, SI6415DQ-T1-BE3 has a gate threshold voltage of -1.0 V and delivers 0.030 Ω RDS(on) at VGS = -4.5 V, enabling full enhancement with 3.3 V logic when referenced to source. At VGS = -3.3 V, typical RDS(on) is ~0.038 Ω - still sufficient for many low-duty-cycle or moderate-current applications. The SI6415DQ-T1-BE3 transfer characteristics curve confirms usable ID above 2 A at -3.3 V.
How should the source pins (2, 3, 6, 7) of SI6415DQ-T1-BE3 be routed on the PCB?
All four source pins of SI6415DQ-T1-BE3 must be tied together with low-inductance, equal-length traces to minimize current imbalance and thermal gradient. Vishay recommends connecting them to a common internal ground plane using multiple vias - not daisy-chained routing. Unequal trace lengths cause uneven current sharing, increasing effective RDS(on) and localized heating. The SI6415DQ-T1-BE3 package drawing and AN806 explicitly require this layout for rated performance.
Is SI6415DQ-T1-BE3 suitable for reverse-current blocking in OR-ing applications?
Yes, SI6415DQ-T1-BE3 is widely used for OR-ing due to its low VSD (-0.75 V typical at -1.5 A) and symmetrical source/drain structure. When placed anode-to-anode in back-to-back configuration, it blocks reverse current while maintaining <100 mV forward drop at 5 A. Its body diode recovery time (trr = 40–60 ns) prevents cross-conduction in fast-switching OR-ing controllers. The SI6415DQ-T1-BE3 datasheet specifies these parameters in the Diode Forward Voltage and Dynamic sections.
What is the recommended PCB pad layout for SI6415DQ-T1-BE3 to achieve rated thermal performance?
To achieve the published 83 °C/W RthJA, SI6415DQ-T1-BE3 requires a minimum 1-in² copper pour connected to pins 1/5/8 (drain) and pins 2/3/6/7 (source) via ≥6 thermal vias each, per Application Note AN806 and Pad Pattern Doc 72611. Standard SMT pads alone yield >120 °C/W. The SI6415DQ-T1-BE3 thermal curves assume this copper-spreading layout - omitting it degrades power handling by >40 %.
SI6415DQ-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
SI6415DQ-T1-BE3 FAQ
1.How can I place an order for SI6415DQ-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI6415DQ-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI6415DQ-T1-BE3 reliable?
The price and inventory of SI6415DQ-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI6415DQ-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI6415DQ-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI6415DQ-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI6415DQ-T1-BE3?
SI6415DQ-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI6415DQ-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI6415DQ-T1-BE3?
For technical support, including SI6415DQ-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI6415DQ-T1-BE3 requirements.
6.How does Aetrix verify that SI6415DQ-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI6415DQ-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI6415DQ-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI6415DQ-T1-BE3?
All SI6415DQ-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI6415DQ-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI6415DQ-T1-BE3 part is unused and in its original packaging.
Return procedure for SI6415DQ-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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