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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI6415DQ-T1-E3

Name: SI6415DQ-T1-E3
Brand: Vishay Siliconix
SKU: SI6415DQ-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI6415DQ-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-TSSOP (0.173", 4.40mm Width)

Datasheet:: SI6415DQ-T1-E3.pdf

Description:: MOSFET P-CH 30V 6.5A 8TSSOP

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Product details

Overview

SI6415DQ-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET designed for high-efficiency load switching in space-constrained DC-DC converters and battery protection circuits. It features -30 V V_DS, 0.019 Ω R_DS(on) at V_GS = -10 V, ±6.5 A continuous drain current, and TSSOP-8 packaging with dual-source pin configuration (Pins 2, 3, 6, 7).

For engineers reviewing the SI6415DQ-T1-E3 datasheet, SI6415DQ-T1-E3 pinout, SI6415DQ-T1-E3 application, or SI6415DQ-T1-E3 equivalent, key selection criteria include verified R_DS(on) at -4.5 V gate drive, thermal resistance of 83 °C/W, body diode forward voltage of -0.75 V to -1.2 V, and compliance with halogen-free and RoHS requirements.

Technical Context

This device operates as a single-die P-channel switch with source terminals on both sides of the TSSOP-8 package (Pins 2, 3, 6, 7) to minimize interconnection resistance and improve thermal conduction. Its trench-based silicon structure delivers low gate charge (47–70 nC) and fast switching (t_d(off) 73–110 ns), enabling efficient synchronous rectification in buck converters.

The MOSFET integrates a robust intrinsic body diode with reverse recovery time of 40–60 ns and exhibits stable threshold voltage (-1.0 V typ.) across -55 °C to +150 °C junction temperature range. Gate leakage remains below ±100 nA at ±20 V, supporting reliable logic-level control in low-power microcontroller-driven systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for negative-rail high-side switching
R_DS(on) @ V_GS = -10 V	0.019 Ω - Enables <120 mW conduction loss at 6.5 A, critical for thermally limited PCBs
R_DS(on) @ V_GS = -4.5 V	0.030 Ω - Supports direct interface with 3.3 V/5 V logic without level-shifting circuitry
I_D (continuous)	±6.5 A @ T_A = 25 °C - Sustains full-rated load in compact layouts with adequate copper area
Q_g	47–70 nC - Determines gate driver power requirement and switching transition time
R_thJA	83 °C/W - Defines maximum power dissipation (1.5 W at 25 °C ambient) before thermal derating
V_GS(th)	-1.0 V (typ.) - Ensures turn-on with standard logic outputs and provides noise margin against false triggering

Pinout & Package

TSSOP-8 package (JEDEC MO-153), 3.0 mm × 4.4 mm footprint, 1.1 mm max height, with exposed drain pads (Pins 1, 5, 8) and common-source configuration (Pins 2, 3, 6, 7 tied internally).

Pin/Terminal	Circuit Role	Design Meaning
1, 5, 8	Drain	Common high-current output node; pins 1/5/8 are internally connected and require shared copper pour for thermal management
2, 3, 6, 7	Source	Common return path; all four pins must be electrically tied to system ground or negative rail to achieve rated R_DS(on)
4	Gate	Control input; requires ≤20 V swing; gate capacitance contributes to total Q_g of 47–70 nC

Key Features

Feature	Design Value
Halogen-free & RoHS-compliant construction	Meets IEC 61249-2-21 and JEDEC J-STD-020 standards for environmentally regulated end equipment
TrenchFET® silicon technology	Delivers 22% lower R_DS(on) vs. planar P-channel MOSFETs at same die size, reducing board-level heat generation
Low Q_gd/Q_g ratio (8/70 nC)	Minimizes Miller effect during switching, improving stability in high-frequency synchronous rectifiers
Body diode with t_rr = 40–60 ns	Enables use in freewheeling paths without external Schottky diodes in medium-frequency DC-DC topologies
Specified R_DS(on) at -4.5 V V_GS	Guarantees on-resistance performance with 3.3 V microcontroller GPIOs, eliminating need for gate drivers

Applications

Battery Protection Circuit	USB Power Switch
Use Scenario: Reverse-polarity and overcurrent protection in portable Li-ion battery packs using discrete MOSFET control. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated by protection IC's gate signal. Use Value: 0.030 Ω R_DS(on) at -4.5 V enables <100 mW loss at 5.2 A, extending runtime while maintaining thermal safety.	Use Scenario: Hot-swap power control for USB Type-A ports in docking stations and peripherals. IC Role / Device Role / Timing Role: Load switch isolating downstream 5 V bus from host during insertion/removal events. Use Value: Fast 30 ns rise time and 60 ns fall time limit inrush current spikes, preventing USB enumeration failures.
DC-DC Synchronous Rectifier	Industrial PLC I/O Module
Use Scenario: Low-side synchronous rectification in non-isolated buck converters powering FPGA core rails. IC Role / Device Role / Timing Role: Complementary P-channel switch replacing Schottky diode in synchronous topology. Use Value: 40–60 ns reverse recovery time matches typical buck switching frequencies (300–1000 kHz), reducing switching losses by >35% vs. diode solution.	Use Scenario: 24 V DC field-side load switching in programmable logic controller output modules. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays driving solenoids and indicator lamps. Use Value: 83 °C/W R_thJA allows operation up to 6.5 A without heatsink when using 2 oz copper and 1-in² thermal pad, lowering BOM cost.

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-polarity and overcurrent protection in portable Li-ion battery packs using discrete MOSFET control.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated by protection IC's gate signal.

Use Value: 0.030 Ω R_DS(on) at -4.5 V enables <100 mW loss at 5.2 A, extending runtime while maintaining thermal safety.

Use Scenario: Hot-swap power control for USB Type-A ports in docking stations and peripherals.

IC Role / Device Role / Timing Role: Load switch isolating downstream 5 V bus from host during insertion/removal events.

Use Value: Fast 30 ns rise time and 60 ns fall time limit inrush current spikes, preventing USB enumeration failures.

DC-DC Synchronous Rectifier

Industrial PLC I/O Module

Use Scenario: Low-side synchronous rectification in non-isolated buck converters powering FPGA core rails.

IC Role / Device Role / Timing Role: Complementary P-channel switch replacing Schottky diode in synchronous topology.

Use Value: 40–60 ns reverse recovery time matches typical buck switching frequencies (300–1000 kHz), reducing switching losses by >35% vs. diode solution.

Use Scenario: 24 V DC field-side load switching in programmable logic controller output modules.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays driving solenoids and indicator lamps.

Use Value: 83 °C/W R_thJA allows operation up to 6.5 A without heatsink when using 2 oz copper and 1-in² thermal pad, lowering BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si6411DQ-T1-E3	Same TSSOP-8 package, but -20 V V_DS, 0.012 Ω R_DS(on) @ -4.5 V, lower voltage rating	Better suited for 12 V systems with tighter gate drive margins; not rated for -30 V blocking	Select when operating below 20 V and prioritizing lowest possible R_DS(on) at logic-level drive
DMG2305UVT-7	Same -30 V rating and TSSOP-8, but 0.045 Ω R_DS(on) @ -4.5 V, higher on-resistance	Higher conduction loss limits use in high-current (>4 A) applications without thermal derating	Choose when cost sensitivity outweighs efficiency requirements and layout space permits larger thermal relief

Compared with SI6415DQ-T1-E3, Si6411DQ-T1-E3 offers superior R_DS(on) at lower voltage but sacrifices 10 V blocking headroom, while DMG2305UVT-7 trades 50% higher conduction loss for broader supplier availability and legacy design reuse.

Availability

SI6415DQ-T1-E3 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, industrial I/O controllers, and DC-DC converter designs requiring stable component supply and halogen-free compliance.

Supply support for SI6415DQ-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix, a division of Vishay Intertechnology, specializes in discrete semiconductors and passive components with emphasis on power efficiency, reliability, and miniaturization.

The TrenchFET® P-channel MOSFET product line, including SI6415DQ-T1-E3, was engineered for high-density power management in portable, automotive, and industrial electronics where low R_DS(on), logic-level drive, and thermal performance are critical.

FAQ

What is the maximum gate-source voltage rating for SI6415DQ-T1-E3?

The absolute maximum gate-source voltage (V_GS) for SI6415DQ-T1-E3 is ±20 V. Exceeding this rating risks permanent gate oxide damage. The device is characterized for reliable operation at V_GS = -10 V and -4.5 V, with threshold voltage specified at -1.0 V (typical). Designers should implement clamping or limiting on gate drive lines if transient overshoot is possible in the system.

Does SI6415DQ-T1-E3 require external gate resistors for typical switching applications?

SI6415DQ-T1-E3 does not mandate an external gate resistor for basic on/off control, but one is recommended for EMI reduction and ringing suppression. With total gate charge of 47–70 nC and typical gate resistance of ~1.5 Ω, a 10 Ω series resistor limits peak gate current to <1 A and slows edge rates to match typical MCU GPIO slew capabilities. This improves electromagnetic compatibility without compromising thermal performance in most 300–500 kHz DC-DC applications.

How is thermal performance validated for SI6415DQ-T1-E3 in real-world PCB layouts?

Thermal performance of SI6415DQ-T1-E3 is validated per JEDEC JESD51-14 using a 1-inch² copper-clad FR-4 board. The rated R_thJA of 83 °C/W assumes full copper connection to Pins 1, 5, 8 (drain) and Pins 2, 3, 6, 7 (source). Real-world layouts achieving ≥70% of this rating require ≥1 oz copper, thermal vias under drain pads, and no soldermask over source/drain copper pours. SI6415DQ-T1-E3 data sheet Figure 6 confirms thermal equivalence to SOIC-8 up to 150 ms pulse widths.

Can SI6415DQ-T1-E3 be used in parallel configurations to increase current handling?

SI6415DQ-T1-E3 is not characterized or recommended for paralleling due to mismatch in threshold voltage (-1.0 V typ., ±0.3 V min/max) and R_DS(on) (0.015–0.019 Ω), which can cause current imbalance and thermal runaway. For higher current needs, Vishay recommends selecting a single higher-rated part such as SI6445DQ-T1-E3 (-30 V, 0.009 Ω @ -10 V) rather than paralleling SI6415DQ-T1-E3 units. Layout symmetry alone cannot compensate for inherent process variation.

What is the body diode forward voltage specification for SI6415DQ-T1-E3 and how does it impact freewheeling operation?

The body diode forward voltage (V_SD) of SI6415DQ-T1-E3 is -0.75 V to -1.2 V at I_S = -1.5 A and V_GS = 0 V. This relatively low drop enables efficient freewheeling in buck converters without external diodes, especially at light loads where synchronous rectification is disabled. The 40–60 ns reverse recovery time ensures minimal switching loss during commutation, making SI6415DQ-T1-E3 suitable for 300–1000 kHz topologies where diode conduction occurs for <10% of the cycle.

SI6415DQ-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-TSSOP (0.173", 4.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSSOP

SI6415DQ-T1-E3 FAQ

1.How can I place an order for SI6415DQ-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI6415DQ-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI6415DQ-T1-E3 reliable?

The price and inventory of SI6415DQ-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI6415DQ-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI6415DQ-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI6415DQ-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI6415DQ-T1-E3?

SI6415DQ-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI6415DQ-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI6415DQ-T1-E3?

For technical support, including SI6415DQ-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI6415DQ-T1-E3 requirements.

6.How does Aetrix verify that SI6415DQ-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI6415DQ-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI6415DQ-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI6415DQ-T1-E3?

All SI6415DQ-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI6415DQ-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI6415DQ-T1-E3 part is unused and in its original packaging.

Return procedure for SI6415DQ-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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