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Vishay Siliconix SI6423ADQ-T1-GE3
- Part No.:
- SI6423ADQ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
SI6423ADQ-T1-GE3.pdf
- Description:
- MOSFET PCH 20V 10.3/12.5A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,865
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Product details
Overview
SI6423ADQ-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -20 V drain-source voltage, with RDS(on) of 9.8 mΩ at VGS = -4.5 V and continuous drain current of -12.5 A at TC = 25 °C. It serves as a high-efficiency load or battery switch in compact DC power management circuits.
For engineers reviewing the SI6423ADQ-T1-GE3 datasheet, SI6423ADQ-T1-GE3 pinout, SI6423ADQ-T1-GE3 application, or SI6423ADQ-T1-GE3 equivalent, key selection criteria include its low gate charge (63 nC at VGS = -4.5 V), robust avalanche rating (20 mJ), and TSSOP-8 package optimized for thermally constrained PCB layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg/Qgd ratio (63 nC total gate charge, 25.3 nC gate-drain charge). Its negative threshold voltage (-0.4 V to -1.0 V) enables reliable enhancement-mode operation with logic-level gate drive down to -1.8 V.
The device integrates a body diode with VSD = -0.75 V at -10 A and trr = 45 ns, supporting synchronous rectification and reverse-current protection in bidirectional power paths. Thermal design is supported by RthJC = 46 °C/W (max) and RthJA = 65 °C/W (typ) on standard FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 20 V rail systems and battery-switching applications |
| RDS(on) @ VGS = -4.5 V | 9.8 mΩ - Enables ≤100 mW conduction loss at 10 A, critical for thermal budget in space-constrained loads |
| Qg @ VGS = -4.5 V | 63 nC - Low gate drive energy supports efficient PWM control up to 500 kHz without excessive driver loss |
| ID (continuous, TC = 25 °C) | -12.5 A - Sustains full-rated load current with heatsinked case mounting |
| EAS | 20 mJ - Withstands single-pulse inductive energy events common in hot-swap and load-dump transients |
| VGS(th) | -0.4 to -1.0 V - Ensures turn-on with standard 3.3 V or 5 V logic outputs driving inverted gate signals |
| RthJA (typ) | 65 °C/W - Predictable junction-to-ambient rise on 1" × 1" FR4 allows accurate thermal margining without custom layout |
Pinout & Package
TSSOP-8 package (JEDEC MO-153), 3.0 mm × 6.4 mm footprint, 1.0 mm max height, lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with Rg = 0.8–7.2 Ω - compatible with standard gate drivers without external series resistance |
| 5, 6, 7 | Drain (D) | Three parallel drain terminals provide low-inductance connection to high-current output nodes and heat-spreading copper |
Key Features
| Feature | Design Value |
|---|---|
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed |
| 100 % UIS tested | Guarantees single-pulse avalanche robustness per JEDEC JESD22-A115, critical for unclamped inductive switching |
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| Low Qgd/Qg ratio | 0.40 (25.3/63) - minimizes Miller-induced shoot-through risk in half-bridge configurations |
| Body diode trr | 45 ns (typ) - enables efficient freewheeling in synchronous buck or OR-ing applications without external Schottky |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path with fast fault response. Use Value: 9.8 mΩ RDS(on) limits voltage drop to <100 mV at 10 A, preserving battery runtime and enabling precise current sensing. |
Use Scenario: VBUS enable/disable in USB-C PD sink applications requiring <5 ms turn-off during fault conditions. IC Role / Device Role / Timing Role: Load switch isolating downstream 5–20 V power rails from upstream source. Use Value: 12 ns turn-on delay and 36 ns fall time support rapid, glitch-free power sequencing compliant with USB PD 3.1. |
| Industrial PLC I/O Module | Automotive Body Control Module |
Use Scenario: Solid-state replacement for electromechanical relays in 24 V DC digital output modules. IC Role / Device Role / Timing Role: Low-side or high-side switch driving solenoids, valves, and indicator LEDs. Use Value: 20 mJ EAS withstands inductive kickback from 24 V coils without snubber networks, reducing BOM count. |
Use Scenario: Power gating for infotainment subsystems and lighting control in 12 V automotive architectures. IC Role / Device Role / Timing Role: Hot-swap protected supply switch meeting ISO 7637-2 pulse 5a/b requirements. Use Value: -55 °C to +150 °C operating range and 100 % UIS testing ensure reliability across engine bay temperature extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 11.5 mΩ @ -4.5 V; Qg = 52 nC; TSSOP-8 | Lower gate charge improves high-frequency efficiency but higher on-resistance increases conduction loss at >8 A | Prefer for PWM-driven loads >200 kHz where switching loss dominates; avoid for high-current DC loads |
| IRLML6344TRPBF | RDS(on) = 38 mΩ @ -4.5 V; SOT-23-3; ID = -3.8 A | Smaller package and lower cost, but 3.9× higher RDS(on) and no UIS rating | Acceptable for low-current (<4 A), non-critical consumer applications; not suitable for industrial or automotive use |
Compared with SI6423ADQ-T1-GE3, Si7157DP-T1-GE3 trades higher conduction loss for faster switching, while IRLML6344TRPBF sacrifices ruggedness and current capacity for footprint reduction - making SI6423ADQ-T1-GE3 the optimal balance for thermally demanding, medium-current industrial load switching.
Availability
SI6423ADQ-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery designs, and industrial PLC output modules requiring stable component supply and long-term manufacturability.
Supply support for SI6423ADQ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI6423ADQ belongs to Vishay's TrenchFET® Gen IV P-channel portfolio, engineered for high-current, low-voltage load switching in space- and thermal-constrained applications such as portable electronics and automotive body control.
FAQ
What is the maximum continuous drain current for SI6423ADQ-T1-GE3 at 70 °C case temperature?
The SI6423ADQ-T1-GE3 supports -10 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSSOP-8 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient airflow. The SI6423ADQ-T1-GE3 maintains safe operation within its 150 °C maximum junction temperature limit when properly heatsinked.
Does SI6423ADQ-T1-GE3 have a guaranteed avalanche rating?
Yes, the SI6423ADQ-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) per JEDEC JESD22-A115, with a rated single-pulse avalanche energy (EAS) of 20 mJ. This specification is verified during production test and ensures robustness against inductive transients in load-switching applications. The SI6423ADQ-T1-GE3 datasheet confirms this rating applies across the full operating temperature range.
Can SI6423ADQ-T1-GE3 be driven directly by a 3.3 V microcontroller GPIO?
Yes, the SI6423ADQ-T1-GE3 has a gate threshold voltage (VGS(th)) of -0.4 V to -1.0 V and delivers RDS(on) = 22.7 mΩ at VGS = -1.8 V, enabling functional turn-on with 3.3 V logic level (inverted drive). However, for minimal conduction loss, a -4.5 V or -5 V gate drive is recommended to achieve 9.8 mΩ RDS(on). The SI6423ADQ-T1-GE3 operates reliably in partial-enhancement mode with 3.3 V control signals.
What is the thermal resistance from junction to case (RthJC) for SI6423ADQ-T1-GE3?
The SI6423ADQ-T1-GE3 has a typical junction-to-case (drain) thermal resistance (RthJC) of 46 °C/W and a maximum of 56 °C/W, measured under steady-state conditions. This value is critical for heatsink design when mounting the TSSOP-8 package to a metal plane or external thermal pad. The SI6423ADQ-T1-GE3 datasheet specifies these parameters with test conditions aligned to JESD51-14 standards.
Is SI6423ADQ-T1-GE3 RoHS-compliant and halogen-free?
Yes, the SI6423ADQ-T1-GE3 is lead (Pb)-free and halogen-free, conforming to RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "-GE3" suffix explicitly denotes compliance with both requirements. The SI6423ADQ-T1-GE3 packaging and wafer fabrication processes meet IPC/JEDEC J-STD-609B Class 1 definitions for halogen content.
SI6423ADQ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.3A (Ta), 12.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 9.8mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 168 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5875 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 2.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
SI6423ADQ-T1-GE3 FAQ
1.How can I place an order for SI6423ADQ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI6423ADQ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI6423ADQ-T1-GE3 reliable?
The price and inventory of SI6423ADQ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI6423ADQ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI6423ADQ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI6423ADQ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI6423ADQ-T1-GE3?
SI6423ADQ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI6423ADQ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI6423ADQ-T1-GE3?
For technical support, including SI6423ADQ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI6423ADQ-T1-GE3 requirements.
6.How does Aetrix verify that SI6423ADQ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI6423ADQ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI6423ADQ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI6423ADQ-T1-GE3?
All SI6423ADQ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI6423ADQ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI6423ADQ-T1-GE3 part is unused and in its original packaging.
Return procedure for SI6423ADQ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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