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Vishay Siliconix SI6423DQ-T1-BE3
- Part No.:
- SI6423DQ-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
SI6423DQ-T1-BE3.pdf
- Description:
- P-CHANNEL 12-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,936
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Product details
Overview
SI6423DQ-T1-BE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET designed for low-voltage load switching in space-constrained applications. It features -12 V drain-source rating, 0.0085 Ω RDS(on) at VGS = -4.5 V, and -9.5 A continuous drain current (TA = 25 °C), operating in TSSOP-8 package with four tied-source pins (2, 3, 6, 7) for enhanced thermal and current handling.
For engineers reviewing the SI6423DQ-T1-BE3 datasheet, SI6423DQ-T1-BE3 pinout, SI6423DQ-T1-BE3 application, or SI6423DQ-T1-BE3 equivalent, key selection considerations include its -1.8 V gate threshold enabling 1.8 V logic-compatible control, low on-resistance at low VGS, and TSSOP-8 footprint optimized for high-density PCB layouts in portable and battery-powered systems.
Technical Context
This device uses trench-gate silicon technology to achieve low RDS(on) while maintaining robust gate oxide integrity and fast switching performance. Its negative VGS(th) (-0.4 V to -0.8 V) ensures reliable turn-on with standard logic-level drive, and integrated body diode supports reverse-current conduction in load-switch configurations.
The TSSOP-8 package employs a custom leadframe with dual-side source/drain terminals and four paralleled source pins to minimize interconnection resistance and improve thermal transfer to the PCB. Thermal resistance junction-to-foot is rated at 35–45 °C/W, supporting efficient heat dissipation without external heatsinking in typical 1" × 1" FR4 layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for 12 V rail switching and reverse-polarity protection |
| RDS(on) @ VGS = -4.5 V | 0.0085 Ω - Enables <10 mW conduction loss at 9.5 A, critical for high-efficiency battery load switches |
| ID (continuous, TA = 25 °C) | -9.5 A - Sustained current capability suitable for USB PD, eMMC, and SSD power gating |
| VGS(th) | -0.4 to -0.8 V - Ensures full enhancement with 1.8 V GPIO, eliminating need for level shifters |
| Qg | 74–110 nC - Low total gate charge enables fast turn-on/off with minimal driver strength requirement |
| RthJA (steady state) | 100–120 °C/W - Defines thermal derating curve for ambient temperature-limited operation on standard FR4 |
| Package | TSSOP-8 - 3.0 mm × 6.4 mm footprint, 1.1 mm profile; JEDEC MO-153 compliant |
Pinout & Package
TSSOP-8 package with exposed drain pads on pins 1, 5, and 8; source terminals on pins 2, 3, 6, and 7 (must be tied common); gate on pin 4. Package height is 1.1 mm, compatible with PCMCIA and ultra-thin portable designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 8 | Drain | Paralleled drain connections for low-inductance, high-current path and primary thermal conduction path to PCB |
| 2, 3, 6, 7 | Source | Four tied-source terminals reduce source inductance and improve current sharing; required for rated RDS(on) |
| 4 | Gate | Control input; accepts logic-level negative voltage; gate-body leakage ≤ ±100 nA at ±8 V |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU for environmentally constrained applications |
| TrenchFET® architecture | Delivers 25% lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| Low VGS(th) distribution | Narrow -0.4 V to -0.8 V range ensures consistent turn-on across temperature and process variation |
| Integrated body diode | VSD = -0.58 to -1.1 V at -1.3 A enables bidirectional current handling in hot-swap and OR-ing circuits |
| High pulsed current rating | IDM = -30 A (10 µs pulse) supports inrush current limiting during power-up sequencing |
Applications
| Battery-Powered Load Switch | USB Type-C Power Delivery |
|---|---|
Use Scenario: Controlling power to peripherals in smartphones, tablets, and wearables using 3.3 V or 1.8 V system rails. IC Role / Device Role / Timing Role: High-side P-channel load switch enabling controlled power ramp-up and reverse-current blocking. Use Value: 0.0085 Ω RDS(on) limits voltage drop to <81 mV at 9.5 A, preserving battery runtime and system efficiency. |
Use Scenario: Managing VCONN and auxiliary power paths in USB-C receptacles and cables per USB PD 3.0 spec. IC Role / Device Role / Timing Role: Bidirectional load switch with body-diode conduction for VCONN sourcing and fault isolation. Use Value: -1.8 V gate threshold allows direct interface with USB-C controller GPIOs, eliminating level-shifter components. |
| eMMC/SD Card Power Gating | Industrial Sensor Node Power Control |
Use Scenario: Enabling/disabling power to embedded MultiMediaCard (eMMC) modules in IoT gateways and edge devices. IC Role / Device Role / Timing Role: Low-leakage, logic-controlled power switch placed between PMIC output and eMMC VCC supply. Use Value: IDSS ≤ -1 µA at -12 V ensures <1 µA standby leakage, extending deep-sleep battery life in always-on storage subsystems. |
Use Scenario: Isolating sensor analog front-end and RF transceiver sections in battery-operated environmental monitors. IC Role / Device Role / Timing Role: Precision on/off control of 3.3 V or 5 V sensor bias rails under microcontroller command. Use Value: Fast 50–75 ns turn-on delay and 75–110 ns rise time support rapid wake/sleep cycling without supply droop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si6421DQ-T1-GE3 | Same TSSOP-8 package, but -8 V VDS, higher RDS(on) (0.012 Ω @ -4.5 V), lower ID (-7.5 A) | Optimized for 5 V or lower rail switching; less suitable for 12 V reverse-polarity protection | Select when VIN ≤ 5 V and board space is identical; verify thermal margin at target load current |
| DMN2020LFG-7 | 30 V VDS, 0.025 Ω RDS(on) @ -4.5 V, SOT-23-6 package, higher RthJA (190 °C/W) | Higher voltage tolerance but larger on-resistance and inferior thermal performance in compact layouts | Choose only if 30 V blocking is mandatory and PCB area permits larger thermal pad; not drop-in |
Compared with SI6423DQ-T1-BE3, Si6421DQ-T1-GE3 offers identical footprint and layout compatibility but reduced voltage and current capability, while DMN2020LFG-7 trades off thermal efficiency and on-resistance for higher voltage rating and smaller package-neither is pin-compatible, requiring layout revision.
Availability
SI6423DQ-T1-BE3 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial sensor node designs requiring stable component supply, halogen-free compliance, and high-reliability TSSOP-8 packaging.
Supply support for SI6423DQ-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and passive components with emphasis on high reliability and energy efficiency.
The SI6423DQ-T1-BE3 belongs to Vishay's LITTLE FOOT® TSSOP-8 power MOSFET family, engineered specifically for space-constrained, high-current load switching in portable and battery-powered electronics where low-profile, low-RDS(on), and logic-level drive are essential.
FAQ
What is the maximum continuous drain current for SI6423DQ-T1-BE3 at 70 °C ambient temperature?
The SI6423DQ-T1-BE3 supports -6.5 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSSOP-8 package on a standard 1" × 1" FR4 board; actual current capability may increase with enhanced PCB copper area or forced airflow. The SI6423DQ-T1-BE3 datasheet confirms this value under steady-state conditions with proper source pin connection.
Does SI6423DQ-T1-BE3 require external gate pull-up or pull-down resistors in load-switch applications?
No, SI6423DQ-T1-BE3 does not require an external gate pull-up resistor because it is a P-channel MOSFET used in high-side configuration-its gate must be pulled *low* relative to source to turn on. A gate pull-down resistor (e.g., 10 kΩ to ground) is recommended to ensure defined off-state during power-up or MCU reset. The SI6423DQ-T1-BE3 gate threshold and leakage characteristics support clean switching without floating gate issues.
Can SI6423DQ-T1-BE3 be used in reverse-polarity protection circuits?
Yes, SI6423DQ-T1-BE3 is suitable for reverse-polarity protection due to its -12 V VDS rating and P-channel topology. When placed in the high-side rail, it blocks reverse current flow while conducting forward current with low loss (0.0085 Ω at -4.5 V). Its body diode orientation supports this function, and the SI6423DQ-T1-BE3 datasheet validates safe operation under reverse-bias conditions up to -12 V.
What is the safe operating area (SOA) limitation for SI6423DQ-T1-BE3 at DC operation?
At DC operation, the SI6423DQ-T1-BE3 SOA is limited by its maximum power dissipation of 1.05 W (TA = 25 °C) and thermal resistance RthJA of 100–120 °C/W. For example, at 5 A drain current, RDS(on) ≈ 0.0085 Ω yields 0.21 W loss, keeping junction temperature well below 150 °C. The SI6423DQ-T1-BE3 SOA curve in the datasheet confirms DC operation is viable up to ~7 A with adequate PCB copper.
Is SI6423DQ-T1-BE3 pin-compatible with other Vishay TSSOP-8 P-channel MOSFETs like Si6421DQ-T1-GE3?
Yes, SI6423DQ-T1-BE3 is pin-compatible with Si6421DQ-T1-GE3 and other single-die Vishay TSSOP-8 P-channel MOSFETs (e.g., Si6420DQ-T1-GE3), sharing identical pinout: Drain on pins 1/5/8, Source on pins 2/3/6/7, Gate on pin 4. This allows direct substitution in existing layouts when voltage/current requirements align, though thermal and electrical performance differences must be verified per the SI6423DQ-T1-BE3 datasheet.
SI6423DQ-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 9.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.05W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
SI6423DQ-T1-BE3 FAQ
1.How can I place an order for SI6423DQ-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI6423DQ-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI6423DQ-T1-BE3 reliable?
The price and inventory of SI6423DQ-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI6423DQ-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI6423DQ-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI6423DQ-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI6423DQ-T1-BE3?
SI6423DQ-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI6423DQ-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI6423DQ-T1-BE3?
For technical support, including SI6423DQ-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI6423DQ-T1-BE3 requirements.
6.How does Aetrix verify that SI6423DQ-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI6423DQ-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI6423DQ-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI6423DQ-T1-BE3?
All SI6423DQ-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI6423DQ-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI6423DQ-T1-BE3 part is unused and in its original packaging.
Return procedure for SI6423DQ-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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