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Vishay Siliconix SI6423DQ-T1-E3
- Part No.:
- SI6423DQ-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
SI6423DQ-T1-E3.pdf
- Description:
- MOSFET P-CH 12V 8.2A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:6,551
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Product details
Overview
SI6423DQ-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage load switching in space-constrained applications, featuring RDS(on) = 8.5 mΩ at VGS = −4.5 V, −12 V VDS rating, and −9.5 A continuous drain current at TA = 25 °C. It operates as a high-side switch in portable power management circuits.
For engineers reviewing the SI6423DQ-T1-E3 datasheet, SI6423DQ-T1-E3 pinout, SI6423DQ-T1-E3 application, or SI6423DQ-T1-E3 equivalent, key selection criteria include gate threshold voltage (−0.4 to −0.8 V), thermal resistance (RthJA = 83 °C/W max for 10 s), source-drain diode forward voltage (−0.58 to −1.1 V), and TSSOP-8 package compatibility with high-density PCB layouts.
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge (Qg = 74–110 nC). Its negative gate threshold enables direct logic-level control from 1.8 V, 2.5 V, or 4.5 V microcontroller outputs without level-shifting circuitry.
The TSSOP-8 package integrates four source pins (2, 3, 6, 7) tied common for low-inductance, high-current return paths, while drain terminals occupy pins 1, 5, and 8 - enabling efficient heat spreading across the PCB copper plane. The body diode supports synchronous rectification and reverse-polarity protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −12 V: Maximum drain-source blocking voltage for 12 V rail protection and battery reverse-polarity circuits. |
| RDS(on) | 0.0085 Ω at VGS = −4.5 V: Enables <10 mΩ on-state resistance for <100 mW conduction loss at 9.5 A. |
| ID (continuous) | −9.5 A at TA = 25 °C: Supports high-current load switching in compact DC/DC modules and USB PD power paths. |
| VGS(th) | −0.4 to −0.8 V: Ensures reliable turn-on with 1.8 V logic I/O, eliminating need for external gate drivers. |
| Qg | 74–110 nC: Low total gate charge enables fast switching (td(on) = 50–75 ns) with minimal drive power. |
| RthJA | 83 °C/W (10 s): Thermal performance validated on 1″ × 1″ FR4 board, supporting sustained operation up to 1.05 W. |
| VSD | −0.58 to −1.1 V at IS = −1.3 A: Low forward voltage of integrated body diode reduces reverse-current losses in OR-ing applications. |
Pinout & Package
TSSOP-8 package per JEDEC MO-153 standard, 3.0 mm × 6.4 mm footprint, 1.1 mm profile, lead (Pb)-free and halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 5, 8 | Drain | Three parallel drain terminals reduce interconnect resistance and improve thermal dissipation into PCB copper. |
| 2, 3, 6, 7 | Source | Four-source configuration minimizes source inductance and provides low-impedance return path for high di/dt loads. |
| 4 | Gate | Single gate input with ±8 V maximum rating; compatible with 1.8 V–4.5 V logic-level drive signals. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 8.5 mΩ RDS(on) in TSSOP-8 - 30% lower than comparable SOIC-8 P-channel MOSFETs at same voltage class. |
| Logic-level gate drive | Turns fully on with −1.8 V VGS, enabling direct interface with low-voltage microcontrollers and PMICs. |
| Integrated source pins | Four-source terminals reduce effective source inductance by >50%, critical for minimizing voltage spikes during fast turn-off. |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU without compromising thermal or electrical performance. |
| Body diode recovery | trr = 160–250 ns ensures stable operation in bidirectional current paths and reverse-battery protection circuits. |
Applications
| USB Type-C Power Delivery Switching | Portable SSD Power Sequencing |
|---|---|
Use Scenario: High-side switching of 5 V/20 V power rails in USB-C receptacles with overvoltage and reverse-polarity protection. IC Role / Device Role / Timing Role: P-channel load switch controlling VBUS enable timing and fault isolation. Use Value: 8.5 mΩ RDS(on) limits voltage drop to <50 mV at 6 A, preserving PD negotiation margins and reducing thermal load on connector traces. |
Use Scenario: Controlled power-up sequence for NVMe SSDs in ultrabooks, where 3.3 V and 1.8 V rails must be enabled after host reset assertion. IC Role / Device Role / Timing Role: Single-pole high-side switch managing 3.3 V supply to PCIe controller and NAND flash. Use Value: −0.8 V VGS(th) ensures clean turn-on with 1.8 V GPIO, eliminating need for discrete level shifters and saving 2.5 mm² PCB area. |
| Industrial Sensor Node Battery Protection | Smartphone Backlight Dimming Control |
Use Scenario: Reverse-battery protection and load disconnect in battery-powered IoT sensors operating from single-cell Li-ion (2.7–4.2 V). IC Role / Device Role / Timing Role: Reverse-polarity guard switch placed between battery terminal and system ground. Use Value: Integrated body diode with −0.58 V forward drop blocks reverse current while adding <0.15 V dropout in forward direction - no external Schottky required. |
Use Scenario: PWM-controlled dimming of white LED strings in smartphone displays using constant-current driver feedback loop. IC Role / Device Role / Timing Role: High-side current-sense shunt switch enabling precise LED current regulation via analog feedback. Use Value: 110 ns fall time (tf) supports >1 MHz PWM frequencies, eliminating visible flicker and enabling 10,000:1 dimming ratios. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si6421DQ-T1-E3 | RDS(on) = 12.5 mΩ at VGS = −4.5 V; otherwise identical pinout, package, and thermal specs. | Higher conduction loss makes it suitable only for ≤6 A loads or thermally relaxed layouts. | Select when lower cost is prioritized over minimal voltage drop in 5 V systems. |
| DMN2053LFG-7 | −20 V VDS, 11.5 mΩ RDS(on) at −4.5 V, SOT-23-6 package; higher RthJA (150 °C/W). | Limited to ≤3 A continuous due to thermal constraints; not suitable for high-current USB PD or SSD rails. | Choose only for ultra-low-cost, low-power sensor nodes where board space is more critical than efficiency. |
Compared with SI6423DQ-T1-E3, Si6421DQ-T1-E3 trades 3.5 mΩ higher on-resistance for lower unit cost, while DMN2053LFG-7 sacrifices 2× thermal performance and 3× current capability to fit a 3× smaller footprint - making SI6423DQ-T1-E3 optimal for balanced power density in portable 5–12 V systems.
Availability
SI6423DQ-T1-E3 is available at Aetrix Electronics and suitable for USB Type-C power delivery modules, portable SSD power sequencing, and industrial sensor node battery protection requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SI6423DQ-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI6423DQ belongs to Vishay's LITTLE FOOT® TSSOP-8 P-channel MOSFET family, engineered specifically for space-constrained, high-current load switching in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current for SI6423DQ-T1-E3 at 70 °C ambient temperature?
The SI6423DQ-T1-E3 supports −8.0 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)" with derating applied. This value assumes proper PCB copper area for thermal dissipation per the 1″ × 1″ FR4 test condition. At higher ambient temperatures or reduced copper, current must be further derated using the provided RthJA and power dissipation curves.
Does SI6423DQ-T1-E3 require a gate resistor for typical 1.8 V GPIO switching?
No, SI6423DQ-T1-E3 does not require an external gate resistor when driven directly by a 1.8 V microcontroller GPIO, because its gate threshold voltage (−0.4 to −0.8 V) ensures full enhancement and its gate capacitance (Qgs = 9.0 nC, Qgd = 19 nC) is well within typical MCU drive capability. However, a small series resistor (≤10 Ω) may be added to dampen ringing in high-di/dt applications without impacting switching speed.
Can SI6423DQ-T1-E3 be used in a dual-MOSFET configuration like Si6436DQ?
No, SI6423DQ-T1-E3 is a single-die P-channel MOSFET in TSSOP-8, with drain pins 1/5/8 and source pins 2/3/6/7 configured for one device. Unlike Si6436DQ (dual-die), it lacks independent gate and source terminals for two separate switches. Attempting to repurpose pins violates the internal die layout and thermal design - use Si6436DQ or Si6422DQ for dual-switch applications.
What is the safe operating area (SOA) limitation for SI6423DQ-T1-E3 at DC operation?
At DC operation, the SI6423DQ-T1-E3 SOA is limited by its maximum power dissipation of 1.05 W (steady-state, TA = 25 °C) and junction temperature cap of 150 °C. For example, at VDS = −6 V, the maximum sustainable ID is approximately −1.75 A - derived from PD = VDS × ID. The published SOA curve confirms this boundary is defined by RDS(on)-limited conduction, not avalanche or thermal runaway.
Is SI6423DQ-T1-E3 compliant with automotive AEC-Q101 qualification?
No, SI6423DQ-T1-E3 is not AEC-Q101 qualified. It is rated for industrial temperature range (−55 to +150 °C) and intended for commercial and portable consumer applications. For automotive-grade equivalents, consider Vishay's AEC-Q101-qualified SQ-series P-channel MOSFETs such as SQ2322EHV-T1_GE3, which share similar RDS(on) and package but undergo extended stress testing per automotive standards.
SI6423DQ-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 9.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.05W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
SI6423DQ-T1-E3 FAQ
1.How can I place an order for SI6423DQ-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI6423DQ-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI6423DQ-T1-E3 reliable?
The price and inventory of SI6423DQ-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI6423DQ-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI6423DQ-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI6423DQ-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI6423DQ-T1-E3?
SI6423DQ-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI6423DQ-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI6423DQ-T1-E3?
For technical support, including SI6423DQ-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI6423DQ-T1-E3 requirements.
6.How does Aetrix verify that SI6423DQ-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI6423DQ-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI6423DQ-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI6423DQ-T1-E3?
All SI6423DQ-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI6423DQ-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI6423DQ-T1-E3 part is unused and in its original packaging.
Return procedure for SI6423DQ-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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