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Vishay Siliconix SI6459BDQ-T1-E3
- Part No.:
- SI6459BDQ-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
SI6459BDQ-T1-E3.pdf
- Description:
- MOSFET P-CH 60V 2.2A 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,996
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Product details
Overview
SI6459BDQ-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -60 V drain-source voltage, 0.115 Ω RDS(on) at VGS = -10 V, and -2.7 A continuous drain current at TJ = 150 °C. It operates in low-side switching configurations for power management in portable electronics and load-switching circuits.
For engineers reviewing the SI6459BDQ-T1-E3 datasheet, SI6459BDQ-T1-E3 pinout, SI6459BDQ-T1-E3 application, or SI6459BDQ-T1-E3 equivalent, key selection criteria include verified -60 V blocking capability, gate-threshold voltage range of -1 V to -3 V, thermal resistance RthJA up to 120 °C/W, and TSSOP-8 package compatibility with space-constrained PCB layouts.
Technical Context
This device implements a trench-gate silicon structure optimized for low RDS(on) and fast switching in DC-to-DC conversion and battery protection circuits. Its gate threshold voltage (VGS(th)) is specified between -1 V and -3 V, enabling reliable turn-on with standard logic-level negative gate drive.
The MOSFET integrates a body diode with VSD = -0.8 V to -1.2 V at IS = -1.25 A and exhibits Qg = 14.5–22 nC, supporting efficient gate driving in high-frequency PWM applications up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - supports input rails up to 60 V in reverse-polarity protection and high-side switch replacement topologies |
| RDS(on) @ VGS = -10 V | 0.115 Ω - enables ≤300 mW conduction loss at -2.7 A, suitable for thermally constrained handheld devices |
| ID (continuous, TA = 25 °C) | -2.7 A - defines maximum steady-state load current without derating on standard FR4 board |
| VGS(th) | -1 V to -3 V - ensures robust turn-on margin with -4.5 V or -10 V gate drive, avoiding partial enhancement |
| Qg | 14.5–22 nC - determines gate driver current requirement and switching transition time in hard-switched converters |
| RthJA (steady state) | 100–120 °C/W - sets junction temperature rise under 1 W dissipation, guiding heatsinking decisions |
| VSD @ IS = -1.25 A | -0.8 V to -1.2 V - defines forward voltage drop during reverse-current freewheeling in buck or OR-ing applications |
Pinout & Package
TSSOP-8 surface-mount package with exposed drain pad (pins 1, 4, 5, 8) and common source connection across pins 2, 3, 6, and 7. Gate on pin 8; no internal isolation between source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 4, 5, 8 | Drain | High-current output node; electrically tied internally and to exposed thermal pad for heat dissipation |
| 2, 3, 6, 7 | Source | Common return path for load current and body diode; must be connected to same net |
| 8 | Gate | Control input requiring negative voltage relative to source to turn on; sensitive to ESD |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers lower RDS(on) per die area than planar MOSFETs, enabling compact TSSOP-8 footprint for -60 V rating |
| Halogen-free construction | Complies with IEC 61249-2-21, supporting environmentally regulated end equipment without compromising thermal performance |
| RoHS-compliant packaging | Lead (Pb)-free and halogen-free terminations meet Directive 2002/95/EC, eliminating hazardous substances in assembly |
| Low gate charge (Qg) | 14.5–22 nC enables efficient switching at >200 kHz with minimal gate driver power loss |
Applications
| Battery Protection Circuit | USB Port Power Switch |
|---|---|
Use Scenario: Prevents reverse-current flow and over-discharge in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch in battery protection IC interface. Use Value: -60 V VDS headroom accommodates surge transients; 0.115 Ω RDS(on) limits voltage drop below 300 mV at 2.7 A. | Use Scenario: Enables/disables 5 V power delivery to downstream USB peripherals with inrush control. IC Role / Device Role / Timing Role: Low-side load switch controlled by system PMIC or microcontroller GPIO. Use Value: Verified -2.7 A continuous rating supports USB 2.0/3.0 bus power; TSSOP-8 fits tight spacing near USB connectors. |
| DC-DC Converter Synchronous Rectifier | Reverse-Polarity Protection |
Use Scenario: Replaces Schottky diode in buck converter output stage to reduce conduction loss. IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal. Use Value: Body diode VSD ≤ -1.2 V and low Qgd (3.7 nC) support clean commutation at 500 kHz switching frequency. | Use Scenario: Blocks damaging reverse-voltage connection in wall-adaptor powered consumer devices. IC Role / Device Role / Timing Role: High-side P-channel switch placed between input connector and system rail. Use Value: -60 V VDS withstands ±30 V transients; -3 V VGS(th) ensures full enhancement with 3.3 V logic-controlled gate pull-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si6457BDQ-T1-E3 | -60 V VDS, 0.095 Ω RDS(on) @ -10 V, -3.2 A ID - lower on-resistance but higher gate charge (24 nC) | Better conduction efficiency at high current; less suitable for high-frequency switching due to higher Qg | Select when minimizing I²R loss dominates over switching loss, e.g., always-on battery backup paths |
| DMG6968U-7 | -20 V VDS, 0.032 Ω RDS(on) @ -4.5 V, -4.5 A ID - lower voltage rating, smaller package (SOT-23) | Not suitable for >20 V systems; limited to low-voltage logic-supply switching | Choose only for 3.3 V/5 V rail control where -60 V rating is unnecessary and board space is critical |
Compared with SI6459BDQ-T1-E3, Si6457BDQ-T1-E3 offers improved conduction loss but demands more gate drive energy, while DMG6968U-7 sacrifices voltage rating for size and cost in sub-20 V designs - neither is pin-compatible, requiring layout revision.
Availability
SI6459BDQ-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, and reverse-polarity protection systems requiring stable component supply and RoHS-compliant sourcing.
Supply support for SI6459BDQ-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power components, including MOSFETs, diodes, and optoelectronics, with emphasis on reliability and high-performance analog solutions.
The Si6459BDQ belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered for high-efficiency, low-voltage-drop power switching in portable and space-constrained applications.
FAQ
What is the maximum continuous drain current for SI6459BDQ-T1-E3 at 70 °C ambient temperature?
The SI6459BDQ-T1-E3 supports -2.2 A continuous drain current at TA = 70 °C on a 1" × 1" FR4 board. This derated value accounts for reduced thermal dissipation capacity at elevated ambient temperatures and aligns with the device's RthJA = 120 °C/W maximum rating. Always verify PCB copper area and airflow in final design.
Does SI6459BDQ-T1-E3 have a built-in body diode, and what is its forward voltage?
Yes, SI6459BDQ-T1-E3 integrates a parasitic body diode with VSD = -0.8 V to -1.2 V at IS = -1.25 A and VGS = 0 V. This diode enables freewheeling current in buck converters and reverse-current blocking in OR-ing configurations, and its voltage drop directly impacts conduction loss during diode conduction phases.
Is SI6459BDQ-T1-E3 compatible with lead-free reflow soldering processes?
Yes, SI6459BDQ-T1-E3 is qualified for lead-free reflow soldering per J-STD-020. Its "T1-E3" suffix denotes lead (Pb)-free and halogen-free construction, and it withstands peak reflow temperatures up to 260 °C. The device meets RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free requirements.
What is the gate threshold voltage range for SI6459BDQ-T1-E3, and how does it affect drive requirements?
The SI6459BDQ-T1-E3 has a gate threshold voltage VGS(th) range of -1 V to -3 V at ID = -250 µA. This means a gate-source voltage more negative than -3 V ensures full enhancement, while -4.5 V or -10 V drive guarantees low RDS(on). Logic-level compatibility requires a negative gate driver referenced to source potential.
Can SI6459BDQ-T1-E3 be used in avalanche-rated applications?
Yes, SI6459BDQ-T1-E3 is rated for single-pulse avalanche energy EAS = 11 mJ and avalanche current IAS = 15 A with L = 0.1 mH. These ratings apply under defined test conditions and support limited unclamped inductive switching events, but sustained avalanche operation is not recommended without detailed thermal and reliability validation.
SI6459BDQ-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
SI6459BDQ-T1-E3 FAQ
1.How can I place an order for SI6459BDQ-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI6459BDQ-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI6459BDQ-T1-E3 reliable?
The price and inventory of SI6459BDQ-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI6459BDQ-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI6459BDQ-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI6459BDQ-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI6459BDQ-T1-E3?
SI6459BDQ-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI6459BDQ-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI6459BDQ-T1-E3?
For technical support, including SI6459BDQ-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI6459BDQ-T1-E3 requirements.
6.How does Aetrix verify that SI6459BDQ-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI6459BDQ-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI6459BDQ-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI6459BDQ-T1-E3?
All SI6459BDQ-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI6459BDQ-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI6459BDQ-T1-E3 part is unused and in its original packaging.
Return procedure for SI6459BDQ-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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