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Vishay Siliconix SI6463BDQ-T1-E3
- Part No.:
- SI6463BDQ-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
SI6463BDQ-T1-E3.pdf
- Description:
- MOSFET P-CH 20V 6.2A 8-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,596
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Product details
Overview
SI6463BDQ-T1-E3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -20 V drain-source voltage, 7.4 A continuous drain current at 25 °C, and 15 mΩ RDS(on) at VGS = -4.5 V. It operates with logic-level gate drive down to -1.8 V and is used in load switching and power OR-ing circuits in portable and space-constrained DC/DC systems.
For engineers reviewing the SI6463BDQ-T1-E3 datasheet, SI6463BDQ-T1-E3 pinout, SI6463BDQ-T1-E3 application, or SI6463BDQ-T1-E3 equivalent, key selection criteria include its low RDS(on) at 1.8 V gate drive, TSSOP-8 package thermal performance, and integrated body diode characteristics for reverse-current blocking in dual-supply redundancy schemes.
Technical Context
This device uses trench-gate silicon technology optimized for low-voltage P-channel switching, enabling stable on-resistance across junction temperatures from -55 °C to 150 °C. Its gate threshold voltage of -0.45 V (min) ensures reliable turn-on with 1.8 V logic controllers, while the 40 nC typical total gate charge supports efficient high-frequency PWM operation up to several hundred kHz.
The TSSOP-8 package features four paralleled source terminals (pins 2, 3, 6, 7) to reduce source inductance and improve current sharing, and its RthJA of 100 °C/W (steady-state) enables 1.05 W power dissipation on standard FR4 without heatsinking - critical for compact battery-powered designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V maximum - supports input rails up to 18 V with safety margin in 12 V and 5 V systems |
| RDS(on) | 0.015 Ω at VGS = -4.5 V - delivers <115 mW conduction loss at 7.4 A, minimizing self-heating |
| ID (continuous) | -7.4 A at TA = 25 °C - sufficient for USB-C PD load switches and hot-swap controllers |
| VGS(th) | -0.45 V min - ensures full enhancement with 1.8 V microcontroller GPIOs |
| Qg | 40 nC typical - enables fast switching with low gate-drive power in 500 kHz DC/DC sync rectifiers |
| VSD | -0.64 V typical at IS = -1.3 A - reduces forward drop in back-to-back MOSFET configurations |
| PD | 1.05 W at TA = 25 °C - achievable on 1" × 1" FR4 without thermal vias or copper pour |
Pinout & Package
TSSOP-8 package with exposed thermal pad (non-electrical), 0.65 mm pitch, JEDEC MO-153 compliant. Four source pins (2, 3, 6, 7) must be connected to common ground plane for optimal current handling and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; accepts logic-level negative voltage for P-channel turn-on |
| 2, 3, 6, 7 | Source | Four paralleled terminals tied to system ground; reduce resistance and inductance in high-di/dt paths |
| 4, 5, 8 | Drain | Three paralleled high-side output terminals; connect to load or upstream supply rail |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = -1.8 V, compatible with 1.8 V and 2.5 V microcontrollers without level shifters |
| TrenchFET® architecture | Delivers 15 mΩ RDS(on) in TSSOP-8 - 30% lower than planar equivalents at same voltage rating |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - suitable for consumer and industrial end-equipment |
| Low Qgd/Qg ratio | 8 nC / 40 nC = 0.2 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking during battery charging and discharging cycles in single-cell Li-ion packs. IC Role / Device Role: High-side P-channel switch controlling charge path between charger IC and battery terminal. Use Value: Low 15 mΩ RDS(on) minimizes voltage drop and heat generation during 5–7 A charging, extending battery runtime and thermal margin. | Use Scenario: Enabling/disabling VBUS power delivery in USB-C receptacles based on CC line detection. IC Role / Device Role: Load switch isolating downstream port from upstream power source during cable insertion/removal. Use Value: Fast 55 ns turn-off delay and low 0.64 V body diode drop prevent backfeed and support robust hot-plug compliance. |
| Hot-Swap Controller Interface | Dual-Supply OR-ing Circuit |
Use Scenario: In-rush limiting and fault isolation in 5 V/3.3 V board-level hot-swap modules. IC Role / Device Role: External pass element controlled by dedicated hot-swap IC (e.g., LTC4215) to manage surge current. Use Value: 30 A pulsed drain rating and 100 °C/W RthJA allow safe transient handling without derating on standard PCB layouts. | Use Scenario: Automatic selection between primary and backup 12 V supplies in telecom shelf management units. IC Role / Device Role: Back-to-back P-channel pair implementing ideal diode behavior with minimal forward voltage. Use Value: Matched VGS(th) and low RDS(on) ensure balanced current sharing and <100 mV forward drop at 6 A per rail. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | -20 V, 8.5 A, 12.5 mΩ @ -4.5 V; SO-8 package with higher thermal mass | Better steady-state power handling (1.6 W), but slower 65 ns tf; suited for lower-frequency, higher-current loads | Prefer when board layout allows SO-8 and thermal design targets >1.2 W dissipation |
| DMG2305UVT-7 | -20 V, 4.2 A, 42 mΩ @ -4.5 V; SOT-26 package, lower cost, higher RDS(on) | Limited to ≤3 A continuous; acceptable only where size and BOM cost outweigh efficiency needs | Select only for space-constrained, low-power auxiliary rails where 42 mΩ loss is tolerable |
Compared with Si6463BDQ-T1-E3, Si7157DP-T1-GE3 offers higher current and better thermal performance in SO-8, while DMG2305UVT-7 trades efficiency for footprint and cost in SOT-26 - making SI6463BDQ-T1-E3 the optimal balance of RDS(on), package density, and gate-drive compatibility in TSSOP-8.
Availability
SI6463BDQ-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and hot-swap controller interfaces requiring stable component supply, lead-free compliance, and consistent TSSOP-8 sourcing.
Supply support for SI6463BDQ-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si6463BDQ belongs to Vishay's logic-level P-channel TrenchFET® family, engineered for high-density DC/DC conversion, load switching, and power-path control in portable and industrial electronics.
FAQ
What is the maximum continuous drain current for SI6463BDQ-T1-E3 at 70 °C ambient temperature?
The SI6463BDQ-T1-E3 supports -5.9 A continuous drain current at TA = 70 °C under standard mounting conditions (1" × 1" FR4). This value is derived from its thermal resistance (RthJA = 100 °C/W) and maximum junction temperature of 150 °C, ensuring safe operation in thermally constrained enclosures without forced airflow. The SI6463BDQ-T1-E3 maintains this rating due to its low RDS(on) and multi-source-pin configuration that enhances heat spreading.
Does SI6463BDQ-T1-E3 require a gate resistor for stable switching in 200 kHz PWM applications?
No external gate resistor is strictly required for stability with the SI6463BDQ-T1-E3 in 200 kHz PWM use, as its 40 nC total gate charge and 8 nC gate-drain charge yield a low Qgd/Qg ratio (0.2), reducing Miller effect sensitivity. However, a 2–6 Ω series gate resistor is recommended to dampen ringing and control dV/dt during turn-on/turn-off - especially when driving from low-impedance microcontroller outputs. The SI6463BDQ-T1-E3 performs reliably under these conditions per its documented td(on)/td(off) timing.
Can SI6463BDQ-T1-E3 be used in a back-to-back configuration for AC-coupled load switching?
Yes, the SI6463BDQ-T1-E3 is suitable for back-to-back P-channel configuration to block bidirectional current flow in AC-coupled or floating-load applications. Its matched VGS(th) (-0.45 V min) and symmetric RDS(on) ensure balanced turn-on behavior, while the integrated body diode (VSD = -0.64 V typ.) provides controlled reverse conduction during dead-time intervals. This makes the SI6463BDQ-T1-E3 effective in isolated power-path designs where galvanic separation is needed without optocouplers.
Is the thermal pad on the SI6463BDQ-T1-E3 package electrically connected or isolated?
The exposed thermal pad on the SI6463BDQ-T1-E3 TSSOP-8 package is electrically isolated - it is not connected to any internal die node and serves solely for thermal conduction to the PCB ground plane. Vishay documentation confirms no electrical tie to source, drain, or gate; therefore, it may be soldered directly to a large copper pour or thermal via array without risk of shorting. This isolation simplifies layout and enhances thermal performance for the SI6463BDQ-T1-E3 in high-power-density applications.
What is the guaranteed minimum gate threshold voltage for SI6463BDQ-T1-E3 over temperature?
The SI6463BDQ-T1-E3 guarantees a minimum gate threshold voltage (VGS(th)) of -0.45 V at TJ = 25 °C, with typical drift of -2 mV/°C over -55 °C to 150 °C. At maximum operating junction temperature (150 °C), VGS(th) remains ≥ -0.70 V, ensuring reliable turn-on with -1.8 V gate drive across full temperature range. This behavior is confirmed in the "Threshold Voltage vs. Temperature" plot of the SI6463BDQ-T1-E3 datasheet (Fig. 13, p.4).
SI6463BDQ-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 7.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
SI6463BDQ-T1-E3 FAQ
1.How can I place an order for SI6463BDQ-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI6463BDQ-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI6463BDQ-T1-E3 reliable?
The price and inventory of SI6463BDQ-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI6463BDQ-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI6463BDQ-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI6463BDQ-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI6463BDQ-T1-E3?
SI6463BDQ-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI6463BDQ-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI6463BDQ-T1-E3?
For technical support, including SI6463BDQ-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI6463BDQ-T1-E3 requirements.
6.How does Aetrix verify that SI6463BDQ-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI6463BDQ-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI6463BDQ-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI6463BDQ-T1-E3?
All SI6463BDQ-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI6463BDQ-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI6463BDQ-T1-E3 part is unused and in its original packaging.
Return procedure for SI6463BDQ-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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