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Vishay Siliconix SI6463BDQ-T1-GE3
- Part No.:
- SI6463BDQ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
SI6463BDQ-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 6.2A 8-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:6,074
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Product details
Overview
SI6463BDQ-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET rated for -20 V drain-source voltage, 7.4 A continuous drain current at 25 °C, and 0.015 Ω RDS(on) at VGS = -4.5 V. It operates with logic-level gate drive down to -1.8 V and is used in high-efficiency load switching for portable power management circuits.
For engineers reviewing the SI6463BDQ-T1-GE3 datasheet, SI6463BDQ-T1-GE3 pinout, SI6463BDQ-T1-GE3 application, or SI6463BDQ-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 1.8 V gate drive, TSSOP-8 package thermal performance, and verified operation in battery protection and USB port power control.
Technical Context
This device implements a single P-channel enhancement-mode silicon MOSFET using Vishay's TrenchFET® process. Its gate threshold voltage of -0.45 V to -0.8 V enables reliable turn-on with low-voltage microcontroller I/O, while the integrated body diode supports reverse-current paths in buck converters and OR-ing circuits.
The TSSOP-8 package features four paralleled source terminals (pins 2, 3, 6, 7) to reduce conduction losses and improve thermal spreading. Absolute maximum ratings include -20 V VDS, ±8 V VGS, and 150 °C junction temperature - confirming suitability for industrial ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for battery-side high-side switch applications |
| RDS(on) | 0.015 Ω @ VGS = -4.5 V - Enables <110 mW conduction loss at 7.4 A continuous load |
| ID (continuous) | -7.4 A @ TA = 25 °C - Supports compact DC-DC output stage and hot-swap FETs without heatsink |
| VGS(th) | -0.45 to -0.8 V - Ensures full enhancement with 1.8 V logic outputs (e.g., ARM Cortex-M0+ GPIO) |
| Qg | 40–60 nC - Determines gate driver sizing for <100 ns switching transitions in synchronous rectifiers |
| RthJA | 100 °C/W (steady state) - Limits junction rise to ~74 °C above ambient at 7.4 A, enabling FR4 PCB-only thermal design |
Pinout & Package
TSSOP-8 surface-mount package with exposed thermal pad (non-electrical); pins 2, 3, 6, and 7 are internally connected to source and must be tied common on PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input; accepts logic-level negative voltage to turn on P-channel channel |
| 2, 3, 6, 7 | Source | Common return path for load current; four pins reduce resistance and improve heat transfer |
| 4, 5, 8 | Drain | Main current path to load; pins 4/5/8 are internally paralleled for lower RDS(on) and thermal resistance |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = -1.8 V, eliminating need for gate boosters in 1.8 V/3.3 V systems |
| TrenchFET® technology | Delivers 30% lower RDS(on) vs. planar P-channel MOSFETs of same die size and voltage rating |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer electronics export compliance |
| Low Qgd/Qg ratio | Qgd = 8 nC / Qg ≈ 16% - improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs with embedded fuel gauges. IC Role / Device Role: High-side P-channel switch controlling charge/discharge path between cell and system load. Use Value: 0.015 Ω RDS(on) at -4.5 V gate drive minimizes voltage drop across protection FET, preserving battery runtime and accuracy of coulomb counting. | Use Scenario: Hot-plug enable/disable of downstream USB peripherals in host controllers with 1.8 V GPIO. IC Role / Device Role: Load switch isolating VBUS from peripheral ports during enumeration or fault conditions. Use Value: Gate threshold of -0.8 V max ensures robust turn-on with 1.8 V logic, while 30 A pulsed rating handles USB inrush transients. |
| DC-DC Synchronous Rectifier | Industrial I/O Module Power Control |
Use Scenario: Secondary-side rectification in isolated flyback or forward converters operating at 100–500 kHz. IC Role / Device Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Low Qg (40–60 nC) and fast switching (tf = 90–150 ns) enable efficient operation up to 500 kHz without excessive gate drive loss. | Use Scenario: Field power enable for 24 V industrial sensors and actuators controlled by PLC digital outputs. IC Role / Device Role: High-side switch managing 24 V supply to external modules with reverse-polarity and short-circuit protection. Use Value: -20 V VDS rating and 150 °C TJ support operation in harsh cabinet environments; four-source-pin layout lowers thermal impedance for sustained 6 A loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.045 Ω @ -4.5 V; higher on-resistance, smaller TSSOP-6 package | Limited to ≤4 A continuous due to thermal constraints; no paralleled source pins | Choose when board space is critical and load current stays below 4 A |
| SI2305DS-T1-GE3 | RDS(on) = 0.055 Ω @ -4.5 V; SOT-23-3 package; lower power dissipation capability | Suitable only for ≤2 A loads; lacks thermal pad and multi-pin source for heat spreading | Prefer for ultra-low-cost, low-current bias rails where footprint is primary constraint |
Compared with DMG2305UVT-7 and SI2305DS-T1-GE3, the SI6463BDQ-T1-GE3 delivers 3× lower RDS(on) and superior thermal performance via its TSSOP-8 layout with four-source terminals - making it the optimal choice for 5–7 A industrial and battery-powered load switching where efficiency and reliability are prioritized over minimal footprint.
Availability
SI6463BDQ-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, and industrial I/O module power control requiring stable component supply and long-term manufacturability.
Supply support for SI6463BDQ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si6463BDQ belongs to Vishay's TrenchFET® P-channel logic-level MOSFET product line, engineered for high-current, low-voltage load switching in space-constrained portable and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SI6463BDQ-T1-GE3 at 70 °C ambient temperature?
The SI6463BDQ-T1-GE3 supports -5.9 A continuous drain current at TA = 70 °C under standard FR4 PCB mounting conditions (1" × 1"). This rating accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and is specified in the Absolute Maximum Ratings table of the official Vishay datasheet (Document Number: 72018).
Does SI6463BDQ-T1-GE3 require a gate resistor for typical switching applications?
While not strictly required, a gate resistor (typically 5–20 Ω) is recommended for the SI6463BDQ-T1-GE3 to control dV/dt, suppress ringing, and limit peak gate current during fast transitions. The device's Qg of 40–60 nC means that driving it directly from a low-impedance 1.8 V GPIO without series resistance may cause overshoot or EMI in sensitive layouts.
Can SI6463BDQ-T1-GE3 be used in reverse polarity protection circuits?
Yes, the SI6463BDQ-T1-GE3 is commonly deployed in reverse polarity protection due to its P-channel configuration and -20 V VDS rating. When placed in the high-side position with source tied to input and drain to load, it blocks reverse voltage while conducting forward current with minimal drop - confirmed by its RDS(on) of 0.015 Ω at -4.5 V gate drive.
Is the thermal pad on the SI6463BDQ-T1-GE3 package electrically connected?
No, the exposed thermal pad on the SI6463BDQ-T1-GE3 TSSOP-8 package is not electrically connected to any internal node. It is intended solely for thermal conduction to the PCB copper pour and must be soldered to a thermally optimized pad with multiple vias to inner ground planes for effective junction-to-ambient heat transfer.
What is the safe operating area (SOA) limitation for SI6463BDQ-T1-GE3 at DC operation?
At DC operation and TA = 25 °C, the SI6463BDQ-T1-GE3 SOA is limited by RDS(on) conduction - meaning the maximum sustainable drain current decreases as VDS increases. For example, at VDS = -10 V, the device supports only ~1.5 A continuously to stay within its 1.5 W power dissipation limit, per the SOA graph in the Vishay datasheet (S10-2138-Rev. C).
SI6463BDQ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 7.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
SI6463BDQ-T1-GE3 FAQ
1.How can I place an order for SI6463BDQ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI6463BDQ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI6463BDQ-T1-GE3 reliable?
The price and inventory of SI6463BDQ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI6463BDQ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI6463BDQ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI6463BDQ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI6463BDQ-T1-GE3?
SI6463BDQ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI6463BDQ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI6463BDQ-T1-GE3?
For technical support, including SI6463BDQ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI6463BDQ-T1-GE3 requirements.
6.How does Aetrix verify that SI6463BDQ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI6463BDQ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI6463BDQ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI6463BDQ-T1-GE3?
All SI6463BDQ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI6463BDQ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI6463BDQ-T1-GE3 part is unused and in its original packaging.
Return procedure for SI6463BDQ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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