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Vishay Siliconix SI7100DN-T1-E3
- Part No.:
- SI7100DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7100DN-T1-E3.pdf
- Description:
- MOSFET N-CH 8V 35A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,752
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Product details
Overview
SI7100DN-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET in a PowerPAK® 1212-8 package, rated for 8 V VDS, 35 A continuous drain current at TC = 25 °C, and 3.5 mΩ RDS(on) at VGS = 4.5 V. It delivers low thermal resistance (RthJC = 1.9 °C/W) and supports high-efficiency secondary synchronous rectification in compact DC/DC converters.
For engineers reviewing the SI7100DN-T1-E3 datasheet, SI7100DN-T1-E3 pinout, SI7100DN-T1-E3 application, or SI7100DN-T1-E3 equivalent, key selection criteria include its 8-V rating, sub-4-mΩ on-resistance at logic-level gate drive, 1.07-mm profile, 100% Rg tested specification, and suitability for space-constrained point-of-load regulators requiring high current density and minimal thermal rise.
Technical Context
This device uses Vishay's TrenchFET® process to achieve ultra-low RDS(on) with logic-level gate drive compatibility (VGS(th) = 0.4–1.0 V). Its PowerPAK 1212-8 package features exposed drain pads on both top and bottom surfaces, enabling dual-side thermal conduction and junction-to-case thermal resistance as low as 1.9 °C/W under steady-state conditions.
The MOSFET exhibits 40 nC total gate charge (Qg) at VGS = 4.5 V and ID = 10 A, with fast switching performance: td(on) = 19 ns, tr = 57 ns, td(off) = 61 ns, and tf = 10 ns (VGEN = 4.5 V, Rg = 1 Ω). Its body diode has VSD = 0.63–1.2 V at IS = 3.2 A and trr = 46–70 ns, supporting efficient synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 8 V - Enables use in low-voltage synchronous buck converters and battery-powered systems where overvoltage margin is tight. |
| RDS(on) | 3.5 mΩ at VGS = 4.5 V - Minimizes conduction loss in high-current point-of-load applications; enables >95% efficiency at 20 A output. |
| ID (continuous) | 35 A at TC = 25 °C - Package-limited current capacity suitable for high-density power stages without external heatsinking. |
| Qg | 40 nC at VGS = 4.5 V - Supports high-frequency switching (>1 MHz) with moderate gate driver power requirements. |
| RthJC | 1.9 °C/W (typical) - Enables direct thermal coupling to PCB copper, reducing junction temperature rise by ~4.8 °C vs. SO-8 at 2 W dissipation. |
| VGS(th) | 0.4–1.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers without level-shifting circuitry. |
| Ciss | 3810 pF - Influences gate drive loop stability and EMI behavior; requires careful layout to minimize ringing in high-dV/dt environments. |
Pinout & Package
SI7100DN-T1-E3 is housed in a leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm, 1.07 mm height), featuring eight terminals arranged in a single-row configuration with four drain (D), three source (S), and one gate (G) connection. The package uses exposed copper drain pads on the bottom for enhanced thermal transfer to the PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Primary source terminal; connects to low-side return path and provides electrical reference for gate drive. |
| 2 (S) | Source | Parallel source connection to reduce bond wire inductance and improve current sharing in high-frequency operation. |
| 3 (S) | Source | Third source terminal supporting high-current paths and minimizing voltage drop across internal interconnects. |
| 4 (G) | Gate | Control input; requires low-inductance routing to suppress oscillation due to 1.1–1.7 Ω intrinsic gate resistance. |
| 5 (D) | Drain | Primary drain terminal; electrically and thermally connected to bottom-exposed copper pad for simultaneous power and thermal conduction. |
| 6 (D) | Drain | Second drain terminal enhancing current handling and reducing package inductance in high-di/dt switching. |
| 7 (D) | Drain | Third drain terminal improving thermal spreading and reducing localized heating during pulsed operation. |
| 8 (D) | Drain | Fourth drain terminal completing symmetric drain layout for balanced current distribution and minimized parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 3.5 mΩ RDS(on) at 4.5 V gate drive, allowing efficient operation with standard logic-level controllers. |
| PowerPAK® 1212-8 package | Delivers 1.9 °C/W junction-to-case thermal resistance in a 3.3 mm × 3.3 mm footprint-40% smaller than TSSOP-8 with superior thermal performance. |
| 100% Rg tested | Guarantees gate resistance between 1.1–1.7 Ω, ensuring predictable gate drive timing and consistent switching behavior across production lots. |
| Low-profile 1.07 mm height | Supports ultra-thin power modules and stacked PCB architectures where Z-height is constrained by mechanical enclosures or adjacent components. |
| Lead (Pb)-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow standards, enabling use in environmentally regulated industrial and consumer products. |
Applications
| Secondary Synchronous Rectification | Point-of-Load Regulation |
|---|---|
Use Scenario: Used as the synchronous rectifier in the secondary side of isolated DC/DC converters (e.g., forward, LLC resonant) operating at 3.3–5 V output. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction losses; operates in phase with primary-side switch via controller-driven gate signal. Use Value: Achieves up to 2 % absolute efficiency gain over 40 V Schottky diodes at 20 A load due to 3.5 mΩ RDS(on) and low VSD body diode. | Use Scenario: Integrated into compact, high-current POL converters powering FPGAs, ASICs, or microprocessors on server or telecom boards. IC Role / Device Role / Timing Role: Low-side switch in buck converter topology; handles peak currents up to 35 A with minimal thermal derating. Use Value: Enables 30 A+ output in <100 mm² board area using standard 4-layer FR4, leveraging 1.9 °C/W RthJC and 1.07 mm profile. |
| USB-C Power Delivery | Industrial Motor Control |
Use Scenario: Employed in bidirectional USB-C PD sink/source paths requiring low-loss, low-voltage switching for 5–20 V operation. IC Role / Device Role / Timing Role: Reverse-blocking switch in power path management ICs or discrete protection circuits. Use Value: Supports 35 A continuous conduction with <10 mV dropout at 20 A, meeting USB-C EMCA v2.0 voltage regulation tolerances. | Use Scenario: Used in half-bridge gate driver stages for small BLDC motors in factory automation or robotics subsystems. IC Role / Device Role / Timing Role: Low-side switch in motor phase leg; commutated at ≤100 kHz with fast body diode recovery (trr = 46 ns). Use Value: Reduces switching losses by 35 % vs. comparable SO-8 MOSFETs due to lower Qg and Coss, improving thermal margin at 40 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7101DN-T1-E3 | Same PowerPAK 1212-8 package and 8 V rating, but higher RDS(on) (4.5 mΩ @ 4.5 V) and lower ID (30 A). | Less suitable for 35 A continuous POL designs; preferred where cost reduction outweighs marginal RDS(on) penalty. | Select Si7101DN-T1-E3 only when thermal budget allows 10–15 % higher conduction loss at full load. |
| DMN2016LFG-7 | 20 V rating, 1.6 mΩ RDS(on) @ 4.5 V, same 3.3 mm × 3.3 mm package but different pinout (G-S-D-S-D-S-D-D). | Not pin-compatible; requires PCB redesign; better suited for 12 V input rails where higher VDS margin is needed. | Choose DMN2016LFG-7 only if system input voltage exceeds 8 V or if higher VDS headroom is required for transient suppression. |
Compared with SI7100DN-T1-E3, Si7101DN-T1-E3 trades 1.0 mΩ higher on-resistance for lower unit cost, while DMN2016LFG-7 offers superior RDS(on) but mandates layout changes and sacrifices 8-V optimization-making SI7100DN-T1-E3 optimal for fixed 5 V/3.3 V output, space-constrained, high-current synchronous rectification.
Availability
SI7100DN-T1-E3 is available at Aetrix Electronics and suitable for secondary synchronous rectification, point-of-load regulation, and USB-C power delivery applications requiring stable component supply, RoHS-compliant packaging, and high-current density in minimal board area.
Supply support for SI7100DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7100DN-T1-E3 belongs to Vishay's PowerPAK® 1212-8 TrenchFET® family, engineered specifically for high-current, low-voltage DC/DC conversion where thermal performance and board space are critical constraints.
FAQ
What is the maximum continuous drain current rating for SI7100DN-T1-E3 at 70 °C case temperature?
The SI7100DN-T1-E3 supports 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from its 25 °C rating, reflecting the robust thermal design of the PowerPAK 1212-8 package and its low 1.9 °C/W junction-to-case resistance.
Does SI7100DN-T1-E3 require a gate resistor for stable operation in a 1 MHz buck converter?
Yes, SI7100DN-T1-E3 benefits from an external gate resistor (typically 1–5 Ω) to dampen ringing caused by its 1.1–1.7 Ω intrinsic Rg and 3810 pF Ciss. At 1 MHz, uncontrolled gate drive can induce shoot-through or EMI; a 2.2 Ω resistor balances switching speed (tr/tf ≈ 60–80 ns) and stability per Vishay AN822 recommendations.
Can SI7100DN-T1-E3 be used in a dual-MOSFET configuration for a synchronous buck high-side/low-side pair?
No-SI7100DN-T1-E3 is an N-channel device optimized for low-side switching. For high-side operation in synchronous buck topologies, a dedicated high-side N-channel MOSFET with bootstrap gate drive capability or a P-channel device is required. SI7100DN-T1-E3 must be paired with a compatible high-side switch such as Si7157DP or Si7862DP.
What is the body diode forward voltage of SI7100DN-T1-E3 at 3.2 A and 25 °C?
The body diode forward voltage (VSD) of SI7100DN-T1-E3 is 0.63–1.2 V at IS = 3.2 A and TJ = 25 °C, per the Drain-Source Body Diode Characteristics table. This low VSD minimizes reverse-recovery losses during dead-time conduction in synchronous rectifiers.
Is SI7100DN-T1-E3 compatible with lead-free reflow profiles per JEDEC J-STD-020?
Yes, SI7100DN-T1-E3 is qualified for lead-free reflow with a peak temperature of 240 °C (±0 °C tolerance) for 20–40 seconds, matching JEDEC J-STD-020 requirements. Vishay specifies this in Document 73257 and confirms compatibility with standard Pb-free solder paste profiles including ramp rates ≤6 °C/s.
SI7100DN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3810 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7100DN-T1-E3 FAQ
1.How can I place an order for SI7100DN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7100DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7100DN-T1-E3 reliable?
The price and inventory of SI7100DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7100DN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7100DN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7100DN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7100DN-T1-E3?
SI7100DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7100DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7100DN-T1-E3?
For technical support, including SI7100DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7100DN-T1-E3 requirements.
6.How does Aetrix verify that SI7100DN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7100DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7100DN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7100DN-T1-E3?
All SI7100DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7100DN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7100DN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7100DN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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