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Vishay Siliconix SI7100DN-T1-GE3
- Part No.:
- SI7100DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7100DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 8V 35A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,842
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Product details
Overview
SI7100DN-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET in a PowerPAK® 1212-8 package, rated for 8 V VDS, 35 A continuous drain current at TC = 25 °C, and RDS(on) = 3.5 mΩ at VGS = 4.5 V. It features low thermal resistance (RthJC = 1.9 °C/W), 100% Rg tested, and is optimized for secondary synchronous rectification in high-efficiency DC/DC converters.
For engineers reviewing the SI7100DN-T1-GE3 datasheet, SI7100DN-T1-GE3 pinout, SI7100DN-T1-GE3 application, or SI7100DN-T1-GE3 equivalent, key selection criteria include its 8-V rating, ultra-low on-resistance at low gate drive, halogen-free and Pb-free construction, and compatibility with space-constrained point-of-load designs requiring minimal thermal rise.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low RDS(on) and fast switching with Qg = 40 nC (typ.) at VGS = 4.5 V. Its gate threshold voltage (VGS(th)) ranges from 0.4 V to 1.0 V, enabling robust turn-on with 2.5 V–4.5 V logic-level drive.
The PowerPAK 1212-8 package integrates an exposed-drain thermal pad and eight terminals (4×D, 1×G, 3×S) for low-inductance, high-current routing and direct board-level heat conduction. Thermal performance is characterized by RthJC = 1.9 °C/W (max) and RthJA = 24 °C/W (typ.) on 1" × 1" FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 8 V - Supports input/output rails up to 8 V, suitable for 5 V and 3.3 V synchronous buck stages. |
| RDS(on) | 3.5 mΩ at VGS = 4.5 V - Enables <100 mW conduction loss at 15 A, critical for high-efficiency secondary-side rectification. |
| ID (continuous) | 35 A at TC = 25 °C - Package-limited current handling supports high-density POL converter output stages. |
| Qg | 40 nC (typ.) at VGS = 4.5 V - Low gate charge reduces driver power and enables efficient operation at >500 kHz switching frequencies. |
| RthJC | 1.9 °C/W (max) - Enables direct thermal coupling to PCB copper, limiting junction-to-case temperature rise to <70 °C at 35 W dissipation. |
| VGS(th) | 0.4–1.0 V - Ensures reliable enhancement-mode turn-on with standard logic-level gate drivers and avoids false triggering. |
| Body diode VSD | 0.63–1.2 V at IS = 3.2 A - Low forward voltage minimizes reverse-recovery losses during dead-time conduction in synchronous rectifiers. |
Pinout & Package
SI7100DN-T1-GE3 is housed in a leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm, 1.07 mm profile) with exposed drain pad on the bottom side for thermal and electrical connection. The top-side terminals are arranged in a single-row configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Primary source connection; three parallel source terminals reduce package inductance and improve current sharing. |
| 2 (S) | Source | Secondary source connection; electrically tied internally to Pin 1 and Pin 3 for low-impedance return path. |
| 3 (S) | Source | Third source terminal; provides symmetrical layout routing and enhances thermal spreading from die to PCB. |
| 4 (G) | Gate | Control input; isolated gate structure requires <100 nA leakage (IGSS) and supports 2.5–8 V drive range. |
| 5–8 (D) | Drain | Four parallel drain terminals connected to exposed bottom pad; carry full load current and serve as primary thermal interface to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 3.5 mΩ RDS(on) at 4.5 V gate drive, enabling high-efficiency operation without gate boosting. |
| PowerPAK® 1212-8 package | Provides 1.9 °C/W junction-to-case thermal resistance and 40% smaller footprint than TSSOP-8, ideal for compact POL modules. |
| 100% Rg tested | Ensures consistent gate resistance (1.1–1.7 Ω), critical for predictable switching timing and EMI control in high-frequency converters. |
| Halogen-free & Pb-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant industrial and computing applications. |
| Low Qgd/Qg ratio | Qgd = 8.2 nC / Qg = 40 nC → 20.5% - Reduces Miller effect, improving hard-switching robustness and dV/dt immunity. |
Applications
| Secondary Synchronous Rectification | Point-of-Load (POL) DC/DC Converters |
|---|---|
Use Scenario: Used as the low-side switch in isolated DC/DC converters (e.g., forward, flyback, LLC) to replace Schottky diodes and recover energy during freewheeling phase. IC Role / Device Role / Timing Role: N-channel MOSFET operating in synchronous rectifier mode, driven by transformer-coupled or controller-generated gate signals with precise timing relative to primary switch. Use Value: Reduces conduction loss by >50% vs. 0.5 V Schottky diode at 15 A, increasing overall converter efficiency from ~92% to >95% at full load. | Use Scenario: Integrated into compact, high-current POL modules supplying CPUs, FPGAs, or ASICs on server motherboards and telecom line cards. IC Role / Device Role / Timing Role: High-side or low-side power switch in multiphase buck converters, leveraging low RDS(on) and fast switching to minimize voltage droop and thermal footprint. Use Value: Enables 35 A continuous output in <100 mm² area while maintaining TJ < 105 °C under 26.1 A ambient-limited conditions, reducing need for external heatsinks. |
| USB PD Power Delivery Systems | Industrial Motor Drive Half-Bridges |
Use Scenario: Employed in 5–20 V USB PD sink-side power path management, including input OR-ing and programmable power supply (PPS) regulation. IC Role / Device Role / Timing Role: Low-VDS N-channel MOSFET used in back-to-back configuration for bidirectional current control and reverse-polarity protection. Use Value: With VGS(th) ≤ 1.0 V and RDS(on) = 3.5 mΩ, supports <50 mV dropout at 10 A, meeting USB PD 3.1 PPS ±20 mV accuracy requirements. | Use Scenario: Configured as low-side switch in 8 V-rated gate driver IC reference designs or auxiliary power rails for BLDC motor controllers. IC Role / Device Role / Timing Role: Fast-switching, logic-level N-channel MOSFET driving gate capacitance of high-voltage half-bridge stages or powering isolated bootstrap supplies. Use Value: Qg = 40 nC and tf = 8–15 ns enable clean 100+ kHz PWM edge transitions, minimizing shoot-through risk and gate driver stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7101DN-T1-GE3 | Same PowerPAK 1212-8 package, but P-channel with –8 V VDS, –35 A ID, and 5.5 mΩ RDS(on) at VGS = –4.5 V. | Used in high-side configurations or load switches where polarity reversal is required; not interchangeable due to complementary channel type. | Select only when P-channel functionality and negative gate drive are needed; not a drop-in replacement. |
| DMN10H8TFA-7 | 8 V N-channel in 2×2 mm WDFN package; RDS(on) = 4.5 mΩ at VGS = 4.5 V; Qg = 32 nC; RthJC = 2.5 °C/W. | Offers lower gate charge but higher on-resistance and worse thermal resistance; suited for lower-current, ultra-compact layouts where board area is more constrained than thermal budget. | Prefer for space-limited designs below 20 A; avoid if thermal margin or >25 A peak current is required. |
Compared with SI7100DN-T1-GE3, Si7101DN-T1-GE3 serves complementary circuit roles (P-channel vs. N-channel), while DMN10H8TFA-7 trades 1.0 mΩ higher RDS(on) and +0.6 °C/W higher RthJC for a 15% smaller footprint-making SI7100DN-T1-GE3 optimal for thermally demanding, high-current synchronous rectification.
Availability
SI7100DN-T1-GE3 is available at Aetrix Electronics and suitable for secondary synchronous rectification, point-of-load DC/DC converters, and USB PD power delivery systems requiring stable component supply, halogen-free compliance, and high-current density in minimal PCB area.
Supply support for SI7100DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si7100DN product line is part of Vishay's TrenchFET® Power MOSFET family designed specifically for high-efficiency, high-current, low-voltage DC/DC conversion in computing, communications, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SI7100DN-T1-GE3 at 70 °C case temperature?
The SI7100DN-T1-GE3 supports 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects package-limited current handling independent of ambient conditions, and aligns with its 52 W PD rating at TC = 25 °C derated to 33 W at TC = 70 °C. The device maintains this current capability due to its low RDS(on) and efficient PowerPAK® thermal path.
Does SI7100DN-T1-GE3 require a gate resistor for stable operation in synchronous rectifier circuits?
While SI7100DN-T1-GE3 does not mandate an external gate resistor, a small series resistor (1–10 Ω) is recommended to dampen ringing caused by parasitic inductance and prevent unintended oscillation during fast switching. Its typical gate resistance Rg is 1.1–1.7 Ω, and measured Qgd of 8.2 nC ensures controlled Miller turn-on. For USB PD or high-noise environments, a 4.7 Ω resistor improves EMI performance without compromising SI7100DN-T1-GE3 switching speed.
Can SI7100DN-T1-GE3 be used in a high-side configuration with 5 V gate drive?
No-SI7100DN-T1-GE3 is an N-channel MOSFET and cannot operate as a high-side switch with 5 V gate drive alone, as it requires gate voltage exceeding the source potential (typically >VIN + VGS(th)). It is designed for low-side or synchronous rectifier use where source is near ground or well-defined reference. For high-side 5 V applications, a P-channel device like Si7101DN-T1-GE3 or a gate driver with bootstrap/charge pump is required instead of SI7100DN-T1-GE3.
What is the body diode reverse recovery time (trr) of SI7100DN-T1-GE3, and how does it impact synchronous rectifier performance?
The SI7100DN-T1-GE3 has a body diode reverse recovery time trr of 46–70 ns (at IF = 2 A, di/dt = 100 A/µs, TJ = 25 °C). This fast recovery minimizes overlap conduction loss during dead-time transitions in synchronous rectifiers. Combined with low Qrr (30–50 nC) and VSD = 0.63–1.2 V, it reduces switching loss and EMI compared to standard Schottky diodes-directly enhancing efficiency in 300–1000 kHz DC/DC converters using SI7100DN-T1-GE3.
Is SI7100DN-T1-GE3 compatible with lead-free reflow soldering profiles per JEDEC J-STD-020?
Yes-SI7100DN-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020D. Its peak reflow temperature is rated to 260 °C for 20–40 seconds, with ramp rates ≤6 °C/s. The PowerPAK® 1212-8 package uses matte tin plating and passes thermal cycling, bias humidity, and HAST reliability testing after reflow. Full profile details-including preheat (140–170 °C), soak (155 ±15 °C), and reflow (210–220 °C)-are documented in Vishay's application note AN822 and datasheet 73785 for SI7100DN-T1-GE3.
SI7100DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3810 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7100DN-T1-GE3 FAQ
1.How can I place an order for SI7100DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7100DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7100DN-T1-GE3 reliable?
The price and inventory of SI7100DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7100DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7100DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7100DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7100DN-T1-GE3?
SI7100DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7100DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7100DN-T1-GE3?
For technical support, including SI7100DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7100DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7100DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7100DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7100DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7100DN-T1-GE3?
All SI7100DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7100DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7100DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7100DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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